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    • 23. 发明申请
    • Method for Forming a Pixel of an Electroluminescence Device having Storage Capacitors
    • 形成具有存储电容器的电致发光器件像素的方法
    • US20120171787A1
    • 2012-07-05
    • US13420225
    • 2012-03-14
    • Wein-Town Sun
    • Wein-Town Sun
    • H01L51/56
    • H01L27/3265H01L27/12H01L27/13
    • A method is provided for forming a pixel of an electroluminescence device. The method provides a substrate; defines at least a first area for capacitors, a second area for a transistor on the substrate and a third area for an organic light-emitting diode (OLED) on the substrate; forms first conductive, first dielectric, second conductive, second dielectric, and third conductive layers over the first area; forming a third conductive layer over the second dielectric layer over the first area; wherein the first conductive layer over the first area is directly connected to a power supply voltage, wherein the second conductive layer is electrically connected to a fourth conductive layer and wherein the first conductive layer, the first dielectric layer, and the second conductive layer over the first area collectively form a first one of the capacitors over the first area, the second conductive layer, the second dielectric layer.
    • 提供了形成电致发光器件的像素的方法。 该方法提供基底; 至少限定了电容器的第一区域,衬底上的晶体管的第二区域和衬底上的有机发光二极管(OLED)的第三区域; 在所述第一区域上形成第一导电,第一电介质,第二导电,第二电介质和第三导电层; 在所述第一区域上形成在所述第二介电层上的第三导电层; 其中所述第一区域上的所述第一导电层直接连接到电源电压,其中所述第二导电层电连接到第四导电层,并且其中所述第一导电层,所述第一介电层和所述第二导电层 第一区域共同形成第一区域上的电容器中的第一个,第二导电层,第二介电层。
    • 24. 发明授权
    • Method for forming a pixel of an electroluminescence device having storage capacitors
    • 用于形成具有存储电容器的电致发光器件的像素的方法
    • US08158477B2
    • 2012-04-17
    • US13031712
    • 2011-02-22
    • Wein-Town Sun
    • Wein-Town Sun
    • H01L21/8242
    • H01L27/3265H01L27/12H01L27/13
    • A method for forming a pixel of an electroluminescence device includes providing a substrate; defining at least a first area for capacitors and a second area for a transistor on the substrate; forming a first conductive layer over the first area; forming a first dielectric layer over the first conductive layer; forming a second conductive layer over the first dielectric layer; forming a second dielectric layer over the second conductive layer; forming a third conductive layer over the second dielectric layer; forming a layer of capping silicon nitride between the second dielectric layer and the third conductive layer; forming a semiconductor layer over the second area; forming a gate oxide layer over the second area; and forming a fourth conductive layer over the gate oxide layer.
    • 一种形成电致发光器件的像素的方法包括:提供衬底; 至少限定电容器的第一区域和衬底上的晶体管的第二区域; 在所述第一区域上形成第一导电层; 在所述第一导电层上形成第一电介质层; 在所述第一介电层上形成第二导电层; 在所述第二导电层上形成第二电介质层; 在所述第二电介质层上形成第三导电层; 在所述第二介电层和所述第三导电层之间形成覆盖氮化硅层; 在所述第二区域上形成半导体层; 在所述第二区域上形成栅氧化层; 以及在所述栅极氧化物层上形成第四导电层。
    • 25. 发明授权
    • Current-driven oled panel and related pixel structure
    • 电流驱动的面板及相关像素结构
    • US07868858B2
    • 2011-01-11
    • US11565645
    • 2006-12-01
    • Wein-Town Sun
    • Wein-Town Sun
    • G09G3/32
    • G09G3/3241G09G2300/0842
    • A pixel structure is disclosed. The pixel structure has a light-emitting device; a first scan line for transferring a first signal; a data line for transferring a data current signal; a first transistor having a gate coupled to the first scan line; a current mirror electrically connected to the light-emitting device; and a capacitor. The current mirror includes a second transistor having a gate connected to the data line and one of the source and the drain of the first transistor; and a third transistor having a gate coupled to the other of the source and the drain of the first transistor. The capacitor has two ends coupled to the gate of the third transistor and the light-emitting device respectively, where the capacitor is not coupled to the light-emitting device through the third transistor.
    • 公开了像素结构。 像素结构具有发光装置; 用于传送第一信号的第一扫描线; 用于传送数据电流信号的数据线; 第一晶体管,具有耦合到第一扫描线的栅极; 与该发光装置电连接的电流镜; 和电容器。 电流镜包括第二晶体管,其具有连接到第一晶体管的数据线和源极和漏极之一的栅极; 以及第三晶体管,其具有耦合到第一晶体管的源极和漏极中的另一个的栅极。 电容器具有分别耦合到第三晶体管的栅极和发光器件的两端,其中电容器不通过第三晶体管耦合到发光器件。
    • 26. 发明授权
    • Dual gate layout for thin film transistor
    • 薄膜晶体管的双栅极布局
    • US07858988B2
    • 2010-12-28
    • US12469280
    • 2009-05-20
    • Wein-Town SunChun-Sheng LiJian-Shen Yu
    • Wein-Town SunChun-Sheng LiJian-Shen Yu
    • H01L27/14H01L29/04H01L29/18H01L31/036H01L27/088
    • H01L29/78645H01L27/12H01L29/42384H01L29/78621
    • A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the polysilicon layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the polysilicon layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line, which is connected to the source region through a source contact.
    • 公开了液晶显示器的薄膜晶体管的双栅极布局,以减轻暗电流泄漏。 布局包括(1)在基板上具有从顶视图形成的L形或蛇形的多晶硅,其具有重掺杂的源极区,第一轻掺杂区,第一栅极沟道,第二轻掺杂区, 第二栅极沟道,第三轻掺杂区和重掺杂漏极区; (2)形成在多晶硅层和基板上的栅极氧化层,(3)然后在栅极氧化物层上形成栅极金属层,栅极氧化物层具有扫描线和具有L形或I形的延伸部分。 栅极金属与多晶硅层相交,限定了前述栅极沟道。 在栅极通道中,沿着信号线至少有一个通过源极接触连接到源极区域。
    • 27. 发明申请
    • LED LIGHTING CONTROL INTEGRATED CIRCUIT HAVING EMBEDDED PROGRAMMABLE NONVOLATILE MEMORY
    • 具有嵌入式可编程非易失性存储器的LED照明控制集成电路
    • US20100134020A1
    • 2010-06-03
    • US12326872
    • 2008-12-02
    • Sheng-Kai PengWein-Town Sun
    • Sheng-Kai PengWein-Town Sun
    • H05B37/02
    • H05B33/0869H05B33/0872
    • For providing a compact high-precision lighting control means to drive an LED lighting module, a lighting control integrated circuit is set forth to perform an accurate lighting control. At least one nonvolatile memory is embedded in the lighting control integrated circuit for storing a plurality of lookup tables. One lookup table provides related data for setting the driving currents of the LED lighting module based on spacing or pitch of LED disposition of the LED lighting module. Another lookup table provides related data to recover uniformity for different LED damage situations of the LED lighting module. The other lookup tables are applied to perform compensation processes on the driving currents concerning temperature variation, ambient light intensity, aging degradation, and power-on time. In addition, a signal processing unit, a pulse-width-modulation signal generating module, and a driving module are incorporated in the lighting control integrated circuit for signal processing and current driving.
    • 为了提供紧凑的高精度照明控制装置来驱动LED照明模块,设置了照明控制集成电路以执行精确的照明控制。 在照明控制集成电路中嵌入至少一个非易失性存储器,用于存储多个查找表。 一个查找表提供了用于根据LED照明模块的LED配置的间距或间距来设置LED照明模块的驱动电流的相关数据。 另一个查找表提供相关数据,以恢复LED照明模块的不同LED损坏情况的均匀性。 应用其他查找表来对关于温度变化,环境光强度,老化退化和通电时间的驱动电流执行补偿处理。 此外,在用于信号处理和电流驱动的照明控制集成电路中并入信号处理单元,脉冲宽度调制信号产生模块和驱动模块。
    • 28. 发明授权
    • Optical-to-electrical converter and analog-to-digital converter thereof
    • 光电转换器及其模 - 数转换器
    • US07659844B2
    • 2010-02-09
    • US11962094
    • 2007-12-21
    • Hung-Wei TsengLing-Chang HuShi-Hsiang LuWein-Town Sun
    • Hung-Wei TsengLing-Chang HuShi-Hsiang LuWein-Town Sun
    • H03M1/56
    • H03M1/54
    • An analog-to-digital converter (ADC) for converting an optical signal into an electrical signal is disclosed. The ADC includes a detection module, a first P-type metal oxide semiconductor (PMOS) transistor, a first N-type metal oxide semiconductor (NMOS) transistor, a first switch unit, and an output module. The first PMOS transistor and the first NMOS transistor form an inverter. The first switch unit is disposed between the input terminal and the output terminal of the inverter and is turned on/off according to a first control signal. The output module is coupled to the output terminal of the inverter for counting the time that an input voltage is greater than a reference voltage and generating a digital signal.
    • 公开了一种用于将光信号转换为电信号的模数转换器(ADC)。 ADC包括检测模块,第一P型金属氧化物半导体(PMOS)晶体管,第一N型金属氧化物半导体(NMOS)晶体管,第一开关单元和输出模块。 第一PMOS晶体管和第一NMOS晶体管形成反相器。 第一开关单元设置在逆变器的输入端子和输出端子之间,并根据第一控制信号导通/截止。 输出模块耦合到逆变器的输出端子,用于对输入电压大于参考电压的时间进行计数并产生数字信号。
    • 30. 发明申请
    • CURRENT-DRIVEN OLED PANEL AND RELATED PIXEL STRUCTURE
    • 电流驱动OLED面板和相关像素结构
    • US20070091048A1
    • 2007-04-26
    • US11565645
    • 2006-12-01
    • Wein-Town Sun
    • Wein-Town Sun
    • G09G3/36
    • G09G3/3241G09G2300/0842
    • A pixel structure is disclosed. The pixel structure has a light-emitting device; a first scan line for transferring a first signal; a data line for transferring a data current signal; a first transistor having a gate coupled to the first scan line; a current mirror electrically connected to the light-emitting device; and a capacitor. The current mirror includes a second transistor having a gate connected to the data line and one of the source and the drain of the first transistor; and a third transistor having a gate coupled to the other of the source and the drain of the first transistor. The capacitor has two ends coupled to the gate of the third transistor and the light-emitting device respectively, where the capacitor is not coupled to the light-emitting device through the third transistor.
    • 公开了像素结构。 像素结构具有发光装置; 用于传送第一信号的第一扫描线; 用于传送数据电流信号的数据线; 第一晶体管,具有耦合到第一扫描线的栅极; 与该发光装置电连接的电流镜; 和电容器。 电流镜包括第二晶体管,其具有连接到第一晶体管的数据线和源极和漏极之一的栅极; 以及第三晶体管,其具有耦合到第一晶体管的源极和漏极中的另一个的栅极。 电容器具有分别耦合到第三晶体管的栅极和发光器件的两端,其中电容器不通过第三晶体管耦合到发光器件。