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21. 发明申请

US20120282553A1 IMMERSION UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 审中-公开
标题翻译：上层膜成膜组合物及形成光电子图案的方法
公开(公告)号：US20120282553A1
公开(公告)日：2012-11-08
申请号：US13550733
申请日：2012-07-17
申请人： Toru KIMURA , Yukio NISHIMURA , Tomohiro UTAKA , Hiroaki NEMOTO , Atsushi NAKAMURA , Takashi CHIBA , Hiroki NAKAGAWA
发明人： Toru KIMURA , Yukio NISHIMURA , Tomohiro UTAKA , Hiroaki NEMOTO , Atsushi NAKAMURA , Takashi CHIBA , Hiroki NAKAGAWA
IPC分类号： C09D133/16 , C09D133/06 , C09D141/00 , G03F7/20
CPC分类号： G03F7/2041 , C08F214/182 , C08F214/186 , C08F216/10 , C08F220/18 , C08F220/24 , G03F7/11 , C08F220/06 , C08F2222/1013
摘要： An immersion upper layer film composition includes a resin and a solvent. The resin forms a water-stable film during irradiation and is dissolved in a subsequent developer. The solvent contains a monovalent alcohol having 6 or less carbon atoms. The composition is to be applied to form a coat on a photoresist film in an immersion exposure process in which the photoresist film is irradiated through water provided between a lens and the photoresist film.
摘要翻译：浸渍上层膜组合物包括树脂和溶剂。树脂在照射期间形成水稳定膜并溶解在随后的显影剂中。溶剂含有具有6个或更少碳原子的一价醇。在浸渍曝光工艺中，应用该组合物在光致抗蚀剂膜上形成涂层，其中光致抗蚀剂膜通过设置在透镜和光致抗蚀剂膜之间的水进行照射。

22. 发明授权

US07611995B2 Method for removing silicon oxide film and processing apparatus 有权
标题翻译：去除氧化硅膜的方法和处理装置
公开(公告)号：US07611995B2
公开(公告)日：2009-11-03
申请号：US10552262
申请日：2004-04-20
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.
摘要翻译：二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。通过使用含有HF气体和NH 3气体的混合气体，能够有效地从工件表面除去二氧化硅膜。

23. 发明申请

US20090053649A1 Lactone copolymer and radiation-sensitive resin composition 有权
标题翻译：内酯共聚物和辐射敏感树脂组合物
公开(公告)号：US20090053649A1
公开(公告)日：2009-02-26
申请号：US11579646
申请日：2005-05-02
申请人： Hiromitsu Nakashima , Tomohiro Utaka , Takashi Chiba , Eiji Yoneda , Atsushi Nakamura
发明人： Hiromitsu Nakashima , Tomohiro Utaka , Takashi Chiba , Eiji Yoneda , Atsushi Nakamura
IPC分类号： G03F7/004 , C08F24/00
CPC分类号： C08F220/28 , C08F220/18 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A radiation-sensitive resin composition excelling in basic properties as a resist such as sensitivity, resolution, and the like, having a wide depth of focus (DOF) to both a line-and-space pattern and an isolated space pattern, and exhibiting a minimal line width change due to fluctuation of a bake temperature, and having a small line width limit in which the line pattern destroying phenomenon does not occur, and a lactone-containing copolymer useful as a resin component of the composition are provided.The lactone-containing copolymer is represented by a copolymer of the following compounds (1-1), (2-1), and (3-1). The radiation-sensitive resin composition comprises (a) the lactone-containing copolymer and (b) a photoacid generator.
摘要翻译：作为具有对于线间距图案和隔离空间图案的宽焦点（DOF）的宽灵敏度，分辨率等的抗蚀剂的基本性能优异的辐射敏感性树脂组合物，由于烘烤温度的波动引起的线宽变化最小，并且具有不发生线型破坏现象的小线宽限制，并且提供可用作该组合物的树脂成分的含内酯共聚物。含有内酯的共聚物由以下化合物（1-1），（2-1）和（3-1）的共聚物表示。辐射敏感性树脂组合物包含（a）含内酯共聚物和（b）光酸产生剂。

24. 发明申请

US20080038661A1 Copolymer and Top Coating Composition 有权
标题翻译：共聚物和顶部涂料组合物
公开(公告)号：US20080038661A1
公开(公告)日：2008-02-14
申请号：US11664296
申请日：2005-09-28
申请人： Takashi Chiba , Toru Kimura , Tomohiro Utaka , Hiroki Nakagawa , Hirokazu Sakakibara , Hiroshi Dougauchi
发明人： Takashi Chiba , Toru Kimura , Tomohiro Utaka , Hiroki Nakagawa , Hirokazu Sakakibara , Hiroshi Dougauchi
IPC分类号： C08F12/30 , G03C1/73
CPC分类号： G03F7/11 , C08F220/18 , C08F220/26 , C08F220/38 , C08F228/00 , G03F7/2041
摘要： A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which comprises at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000, wherein at least one of R1 and R2 is a fluoroalkyl group having 1 to 4 carbon atoms and R3 in the formula (2) represents a fluoroalkyl group having 1 to 20 carbon atoms.
摘要翻译：用于形成表面涂层的树脂组合物可以形成在光致抗蚀剂膜上而不与光致抗蚀剂膜混合，可以保持在浸没光刻期间不溶于介质的稳定的膜涂层，在干燥曝光期间不损害图案轮廓（这不是浸没式光刻法），并且可以容易地溶解在碱性显影剂中。树脂是包含至少一种选自由下式（1）表示的基团的重复单元，由下式（2）表示的基团的重复单元）的重复单元（I）的共聚物，和具有羧基的重复单元和具有磺基的重复单元（II），所述共聚物的重均分子量通过凝胶渗透色谱法测定为2,000〜100,000，其中R 1〜 R 2是具有1〜4个碳原子的氟代烷基，式（2）中的R 3表示碳原子数1〜20的氟代烷基。

25. 发明申请

US20060213539A1 Method for cleaning thin-film forming apparatus 审中-公开
标题翻译：薄膜形成装置的清洗方法
公开(公告)号：US20060213539A1
公开(公告)日：2006-09-28
申请号：US10549851
申请日：2004-03-25
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
IPC分类号： B08B9/00 , H05H1/00
CPC分类号： C23C16/4408 , C23C16/4404
摘要： This invention is a cleaning method of a film-forming unit that forms a thin film on an object to be processed by supplying a process gas into a reaction chamber containing the object to be processed, the method comprising a purging step of purging an inside of the reaction chamber by supplying into the reaction chamber a nitrogen-including gas that includes nitrogen and that is capable of being activated. The purging step has a step of nitriding a surface of a member in the reaction chamber by activating the nitrogen-including gas.
摘要翻译：本发明是一种成膜单元的清洗方法，其通过在含有待处理物体的反应室中供给处理气体而在被处理物上形成薄膜，该方法包括：清洗步骤，反应室通过向反应室供应包含氮气并且能够活化的含氮气体。清洗步骤具有通过活化含氮气体来使反应室中的构件的表面氮化的步骤。

26. 发明申请

US20050240830A1 Multiprocessor system, processor device 审中-公开
标题翻译：多处理器系统，处理器设备
公开(公告)号：US20050240830A1
公开(公告)日：2005-10-27
申请号：US10998152
申请日：2004-11-29
申请人： Masahito Kubo , Takashi Chiba , Hirofumi Koseki
发明人： Masahito Kubo , Takashi Chiba , Hirofumi Koseki
IPC分类号： G06F11/30 , G06F11/00 , G06F11/34 , G06F13/00
CPC分类号： G06F11/006 , G06F11/0724 , G06F11/0778
摘要： In the initialization of a multiprocessor system, device history information containing mounting position information indicating a mounting position of a CPU board supplied from a history information supplying unit is stored in a nonvolatile storage unit in the CPU board capable of storing plural pieces of device history information, so that the mounting position information on each of CPU boards can be accurately and automatically recorded in each CPU board and the history of the mounting position of the CPU board can be recorded and managed on a CPU board by CPU board basis.
摘要翻译：在多处理器系统的初始化中，包含表示从历史信息提供单元提供的CPU板的安装位置的安装位置信息的设备历史信息被存储在能够存储多条设备历史信息的CPU板中的非易失性存储单元中，因此能够将各CPU板上的安装位置信息准确自动地记录在CPU板上，并且可以通过CPU板对CPU板的安装位置的历史进行记录和管理。

27. 发明授权

US5125081A Inter-configuration changing controller based upon the connection and configuration information among plurality of clusters and the global storage 失效
标题翻译：基于群集多样性和全球存储的连接和配置信息的配置间更改控制器
公开(公告)号：US5125081A
公开(公告)日：1992-06-23
申请号：US313883
申请日：1989-02-23
申请人： Takashi Chiba
发明人： Takashi Chiba
IPC分类号： G06F13/14 , G06F11/20 , G06F15/16 , G06F15/17 , G06F15/177
CPC分类号： G06F11/1666 , G06F15/161 , G06F11/20
摘要： A configuration control system for changing a system configuration of a data processing system. The configuration control system has a plurality of clusters and at least one global storage unit. Each of the clusters has a channel processing unit, at least one central processing unit, at least one main storage unit, a memory control unit and a service processor. The at least one global storage unit has the plural clusters in common. The configuration control system includes a first configuration control device for holding connection information of each unit in a cluster; and a second configuration control device for holding configuration control information of the global storage unit and the cluster. The second configuration control device controlled independently to the first configuration control device. The system also includes a device for generating a specific order for writing the configuration control information to the second configuration control device; and a device for setting a corresponding bit of the second configuration control device to a connection state when a bus between the global storage unit and the cluster is set to the connection state by the first configuration control device. The connection configuration between the global storage unit and the cluster designated by the first configuration control device is automatically set to the second configuration control device, and the second configuration control device is controlled independently to the first configuration control device based on the specific order.

28. 发明授权

US4453216A Access control system for a channel buffer 失效
标题翻译：通道缓冲区的访问控制系统
公开(公告)号：US4453216A
公开(公告)日：1984-06-05
申请号：US388195
申请日：1982-06-14
申请人： Takashi Chiba , Satoru Koga
发明人： Takashi Chiba , Satoru Koga
IPC分类号： G06F12/08 , G06F13/12 , G06F13/00
CPC分类号： G06F12/0817 , G06F13/122
摘要： A computer system comprising a plurality of channels, at least one main storage unit, and a memory control unit having a channel buffer between the main storage unit and the channels. The channel buffer comprises a memory portion divided into a plurality of tag blocks, tag lines, and a data memory portion having a plurality of data lines each corresponding to one of the tag lines. Two tag lines forming a set and each set of the tag memory portion is assigned to one of the channels.
摘要翻译：一种包括多个通道的计算机系统，至少一个主存储单元和在主存储单元和通道之间具有通道缓冲器的存储器控制单元。信道缓冲器包括分为多个标签块，标签行和具有多个数据线的数据存储部分的存储器部分，每条数据线对应于标签行之一。形成集合的两个标签行和标签存储部分的每一组被分配给一个通道。

29. 发明授权

US09287058B2 Accumulator device 有权
标题翻译：蓄电池装置
公开(公告)号：US09287058B2
公开(公告)日：2016-03-15
申请号：US14005472
申请日：2012-02-27
申请人： Nobuo Ando , Teruaki Tezuka , Yuu Watanabe , Makoto Taguchi , Kenji Kojima , Takashi Chiba , Hirobumi Suzuki
发明人： Nobuo Ando , Teruaki Tezuka , Yuu Watanabe , Makoto Taguchi , Kenji Kojima , Takashi Chiba , Hirobumi Suzuki
IPC分类号： H01G9/00 , H01G11/26 , H01G11/22 , H01M4/02 , H01M10/04 , H01M10/42 , H01G11/50 , H01G11/06 , H01G11/70 , H01M10/0525
CPC分类号： H01G11/26 , H01G11/06 , H01G11/22 , H01G11/50 , H01G11/70 , H01M4/02 , H01M10/0431 , H01M10/0525 , H01M10/42 , H01M2004/021 , H01M2010/4292 , Y02E60/13 , Y02T10/7011 , Y02T10/7022
摘要： An accumulator device which provides a high energy density and high output power is provided. The accumulator device (D) includes a positive electrode in which a positive electrode layer (A) is formed, a negative electrode in which a negative electrode layer (B) is formed, and an electrolytic solution (C). The accumulator device is characterized by satisfying that 1.02≦WA/WB≦2.08 and that 390 μm≦TA≦750 μm, where WA is the weight of the positive electrode layer (A), WB is the weight of the negative electrode layer (B), and TA is the thickness of the positive electrode in which the positive electrode layer (A) is formed.
摘要翻译：提供了提供高能量密度和高输出功率的蓄电池装置。蓄电装置（D）包括形成有正极层（A）的正电极，形成有负极层（B）的负极和电解液（C）。蓄电装置的特征在于满足1.02＆nlE; WA / WB＆nlE; 2.08以及390μm＆nlE; TA＆nlE;750μm，其中WA是正极层（A）的重量，WB是负极层的重量 B），TA是形成正极层（A）的正极的厚度。

30. 发明申请

US20120101205A1 COPOLYMER AND TOP COATING COMPOSITION 有权
标题翻译：共聚物和顶涂料组合物
公开(公告)号：US20120101205A1
公开(公告)日：2012-04-26
申请号：US13338569
申请日：2011-12-28
申请人： Takashi CHIBA , Toru KIMURA , Tomohiro UTAKA , Hiroki NAKAGAWA , Hirokazu SAKAKIBARA , Hiroshi DOUGAUCHI
发明人： Takashi CHIBA , Toru KIMURA , Tomohiro UTAKA , Hiroki NAKAGAWA , Hirokazu SAKAKIBARA , Hiroshi DOUGAUCHI
IPC分类号： C09D133/14 , C09D141/00 , C08F228/02 , C09D7/12 , C08F220/28 , C08F220/38
CPC分类号： G03F7/11 , C08F220/18 , C08F220/26 , C08F220/38 , C08F228/00 , G03F7/2041
摘要： A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which includes at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000.
摘要翻译：用于形成表面涂层的树脂组合物可以形成在光致抗蚀剂膜上而不与光致抗蚀剂膜混合，可以保持在浸没光刻期间不溶于介质的稳定的膜涂层，在干燥曝光期间不损害图案轮廓（这不是浸没式光刻法），并且可以容易地溶解在碱性显影剂中。树脂是包含至少一种选自由下式（1）表示的基团的重复单元，由下式（2）表示的基团的重复单元）的重复单元（I）的共聚物，和具有羧基的重复单元和具有磺基的重复单元（II），所述共聚物的重均分子量通过凝胶渗透色谱法测定为2,000〜100,000。

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