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21. 发明授权

US08102034B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08102034B2
公开(公告)日：2012-01-24
申请号：US12564603
申请日：2009-09-22
申请人： Yoshiaki Oikawa , Shingo Eguchi
发明人： Yoshiaki Oikawa , Shingo Eguchi
IPC分类号： H01L23/601 , H01L23/02
CPC分类号： H01L23/60 , H01L23/3107 , H01L23/66 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/3025 , H01L2924/00
摘要： With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
摘要翻译：通过使用形成在半导体集成电路的顶部或底部的导电屏蔽，防止由静电放电引起的半导体集成电路的静电击穿（电路的故障或半导体元件的损坏），并且充分的通信获得能力。通过使用夹持半导体集成电路的一对绝缘体，可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。可以以高产率制造半导体器件，同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。

22. 发明授权

US08035781B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08035781B2
公开(公告)日：2011-10-11
申请号：US11672992
申请日：2007-02-09
申请人： Shingo Eguchi , Yuriko Tsuji
发明人： Shingo Eguchi , Yuriko Tsuji
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133504 , G02F2001/13685
摘要： With an object of providing a transflective type liquid crystal display device having a transparent electrode of an uneven structure formed without particularly increasing steps, in fabricating the transflective type liquid crystal display device, a amorphous transparent conductive film is formed on a substrate, a crystalline portion is formed in the amorphous transparent conductive film to thereby form the transparent conductive film including the crystalline portion, a amorphous portion is removed at a film surface of the transparent conductive film including the crystalline portion to thereby form the transparent conductive film having an uneven shape formed by a remaining crystalline portion at a film surface and a reflecting electrode having the uneven shape is formed by forming a reflective conductive film above the transparent electrode having the uneven shape.
摘要翻译：本发明的目的是提供一种具有不特别增加步骤形成的具有不平坦结构的透明电极的透反射型液晶显示装置，在半透射型液晶显示装置的制造中，在基板上形成非晶体透明导电膜，结晶部分形成在非晶透明导电膜中，从而形成包含结晶部分的透明导电膜，在包含晶体部分的透明导电膜的膜表面处去除非晶部分，从而形成具有不均匀形状的透明导电膜通过在膜表面上的剩余结晶部分和具有不平坦形状的反射电极通过在具有不平坦形状的透明电极上形成反射导电膜而形成。

23. 发明授权

US07944137B2 Electron source and image display apparatus 失效
标题翻译：电子源和图像显示装置
公开(公告)号：US07944137B2
公开(公告)日：2011-05-17
申请号：US12552840
申请日：2009-09-02
申请人： Shingo Eguchi , Yasushi Shimizu , Noriaki Oguri
发明人： Shingo Eguchi , Yasushi Shimizu , Noriaki Oguri
IPC分类号： H01J1/62
CPC分类号： H01J1/316 , H01J31/127 , H01J2201/3165 , H01J2329/0489
摘要： There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 Ω/square and not more than 1×1013 Ω/square.
摘要翻译：提供了根据本发明的电子源，其具有多个电子发射器件，其中每个电子发射器件具有一对电极，以及设置在该对之间的具有各自的电子发射部分的多个导电膜的电极，以与所述一对电极电连接，所述电子源包括：短路抑制膜，其位于所述多个导电膜之间，并且设置在所述电子发射器件上以电连接到一对电极，主要包含钨（W）和锗（Ge）氮化物，其中钨原子数与钨和锗原子数之比在短路抑制膜中为0.24以上，表面电阻率的短路抑制膜不小于1×10 10Ω·OHgr·/平方并且不大于1×10 13Ω·平方。

24. 发明申请

US20110095298A1 Electronic Paper 有权
标题翻译：电子纸
公开(公告)号：US20110095298A1
公开(公告)日：2011-04-28
申请号：US12986443
申请日：2011-01-07
申请人： Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada
发明人： Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada
IPC分类号： H01L33/48
CPC分类号： G02F1/167 , G02F2201/50 , G02F2201/503 , G02F2202/22
摘要： An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
摘要翻译：本发明的目的是增加电子纸对外部应力的阻力。通过在包括第一结构体的第一绝缘膜之间提供包括集成电路部分，第一电极，第二电极和带电粒子的层的元件形成层来增加对外部应力的抵抗性，其中第一纤维体浸渍有第一有机树脂，第二绝缘膜包括第二结构体，其中第二纤维体浸渍有第二有机树脂。

25. 发明申请

US20100120186A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20100120186A1
公开(公告)日：2010-05-13
申请号：US12575680
申请日：2009-10-08
申请人： Shingo Eguchi , Yutaka Shionoiri
发明人： Shingo Eguchi , Yutaka Shionoiri
IPC分类号： H01L21/28
CPC分类号： G02F1/13439 , G02F1/133345 , G02F1/133514 , G02F1/133555 , G02F1/136227 , G02F2001/136222
摘要： An object of the present invention is to provide a transflective liquid crystal display device having an excellent visibility obtained by optimizing the arrangement of a color filter, which would become a problem in the process of fabricating transparent and reflective liquid crystal display devices, for the transflective liquid crystal display device. In the present invention, the arrangement of a color filter is optimized for improving the visibility of the transflective liquid crystal display device. In addition, the structure, which allows the formation of color filters without increasing the capacitance that affects on a display, is fabricated. Furthermore, in the process of fabricating the transflective liquid crystal display device, an uneven structure is additionally formed without particularly increasing an additional patterning step for the formation of such an uneven structure.
摘要翻译：本发明的目的是提供一种半透射型液晶显示装置，其具有通过优化滤色器的布置而获得的良好的可见度，该滤色器在制造透明和反射型液晶显示装置的过程中将成为半透反射液晶显示装置。在本发明中，为了提高半透射型液晶显示装置的可视性，优化滤色器的配置。此外，制造了允许形成滤色器而不增加影响显示器的电容的结构。此外，在制造半透射型液晶显示装置的过程中，另外形成不均匀结构，而不特别增加用于形成这种不均匀结构的附加图形化步骤。

26. 发明申请

US20100072548A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100072548A1
公开(公告)日：2010-03-25
申请号：US12560965
申请日：2009-09-16
申请人： Shingo Eguchi , Yoshiaki Oikawa
发明人： Shingo Eguchi , Yoshiaki Oikawa
IPC分类号： H01L29/786 , H01L21/336 , H01L21/78
CPC分类号： H01L29/786 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L27/1266 , H01L27/13
摘要： A semiconductor device in which defects in characteristics due to electrostatic discharge is reduced and a method for manufacturing the semiconductor device are provided. The semiconductor device has at least one of these structures: (1) a structure in which a first and second insulating films are in direct contact with each other in a peripheral region of a circuit portion, (2) a structure in which a first and second insulators are closely attached to each other, and (3) a structure in which a first conductive layer and a second conductive layer are provided on outer surfaces of the first insulator and the second insulator, respectively, and electrical conduction between the first and second conductive layers is achieved at a side surface of the peripheral region. Note that the conduction at the side surface can be achieved by cutting a plurality of semiconductor devices into separate semiconductor devices.
摘要翻译：减少了由于静电放电引起的特性缺陷的半导体器件以及半导体器件的制造方法。半导体器件具有这些结构中的至少一个：（1）第一和第二绝缘膜在电路部分的周边区域中彼此直接接触的结构，（2）一种结构，其中第一和第二绝缘体彼此紧密连接，和（3）分别在第一绝缘体和第二绝缘体的外表面上设置第一导电层和第二导电层的结构，并且第一和第二绝缘体之间的导电在周边区域的侧面实现导电层。注意，可以通过将多个半导体器件切割成单独的半导体器件来实现侧表面的导电。

27. 发明申请

US20090267225A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090267225A1
公开(公告)日：2009-10-29
申请号：US12429201
申请日：2009-04-24
申请人： Shingo Eguchi
发明人： Shingo Eguchi
IPC分类号： H01L23/29 , H01L21/56
CPC分类号： H01L23/562 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/293 , H01L23/295 , H01L23/3114 , H01L2221/6835 , H01L2924/0002 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.
摘要翻译：在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中，在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。通过设置抵抗外部应力的抗冲击层和用于扩散冲击的冲击扩散层，减小了施加到每单位面积的半导体集成电路的力，从而保护了半导体集成电路。冲击扩散层优选具有低的弹性模量和高的断裂模量。

28. 发明申请

US20090179205A1 Semiconductor Device and Method of Manufacturing Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090179205A1
公开(公告)日：2009-07-16
申请号：US12406140
申请日：2009-03-18
申请人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
发明人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
IPC分类号： H01L27/14
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译：制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。栅电极具有层叠结构。根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

29. 发明申请

US20090023251A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090023251A1
公开(公告)日：2009-01-22
申请号：US12232037
申请日：2008-09-10
申请人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L21/50
CPC分类号： H01L21/67132 , H01L21/02244 , H01L21/02252 , H01L21/67092 , H01L21/707 , H01L27/1266
摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
摘要翻译：当从衬底剥离包括半导体元件的元件形成层时，目的是抑制由剥离产生的静电产生的放电。在衬底上形成释放层和元件形成层。可以将后面剥离的支撑基材固定在元件形成层的上表面。元件形成层通过支撑基材转变，并且在元件形成层和剥离层之间的界面产生剥离。在供给液体时进行剥离，使得通过剥离顺序出现的元素形成层和剥离层被诸如纯水的液体润湿。在元件形成层和剥离层的表面上产生的电荷可以被液体扩散，并且可以消除通过剥离带电的放电。

30. 发明申请

US20070246710A1 Semiconductor Device and Method of Manufacturing Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070246710A1
公开(公告)日：2007-10-25
申请号：US11670460
申请日：2007-02-02
申请人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
发明人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
IPC分类号： H01L29/04
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译：制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。栅电极具有层叠结构。根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

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