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21. 发明申请

US20060044915A1 Flash memory device using semiconductor fin and method thereof 有权
标题翻译：使用半导体鳍片的闪存器件及其方法
公开(公告)号：US20060044915A1
公开(公告)日：2006-03-02
申请号：US11216677
申请日：2005-08-31
申请人： Ji-Hoon Park , Seung-Beom Yoon , Jeong-Uk Han , Seong-Gyun Kim , Sung-Taeg Kang , Bo-Young Seo , Sang-Woo Kang , Sung-Woo Park
发明人： Ji-Hoon Park , Seung-Beom Yoon , Jeong-Uk Han , Seong-Gyun Kim , Sung-Taeg Kang , Bo-Young Seo , Sang-Woo Kang , Sung-Woo Park
IPC分类号： G11C7/00
CPC分类号： H01L29/7881 , H01L27/11526 , H01L27/11534 , H01L29/42324 , H01L29/66795 , H01L29/785
摘要： A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device comprises: insulating layers having different thicknesses formed on a side surface and a top surface of the semiconductor fin, a storage electrode, a gate insulating layer and a control gate electrode sequentially formed on the insulating layers. A thin insulating layer enables charges to be injected or emitted through it, and a thick insulating layer increases a coupling ratio. Accordingly, it is possible to increase an efficiency of a programming or an erase operation of a flash memory device.
摘要翻译：根据本发明的闪速存储器件包括半导体鳍片，其包括由不同晶面产生的顶表面和侧表面。闪存器件包括：在半导体鳍片的侧表面和顶表面上形成不同厚度的绝缘层，在绝缘层上依次形成的存储电极，栅极绝缘层和控制栅电极。薄的绝缘层能够通过电荷注入或发射电荷，并且厚的绝缘层增加耦合比。因此，可以提高闪速存储器件的编程或擦除操作的效率。

22. 发明授权

US06762001B2 Method of fabricating an exposure mask for semiconductor manufacture 失效
标题翻译：制造半导体制造用曝光掩模的方法
公开(公告)号：US06762001B2
公开(公告)日：2004-07-13
申请号：US10003287
申请日：2001-12-06
申请人： Sang Woo Kang
发明人： Sang Woo Kang
IPC分类号： G03F900
CPC分类号： G03F1/68 , G03F1/50 , G03F7/095
摘要： A method of fabricating an exposure mask including the steps of forming a chrome layer, a first photo resist, an Ag layer as a conductive layer and a second photo resist on a transparent quartz substrate, in sequence; forming and using a second photo resist pattern to form a conductive layer pattern by etching the conductive layer; removing the second photo resist pattern; forming an oxide layer for shielding light at the surface of the conductive layer pattern and exposing the first photo resist using the conductive layer pattern with the oxide layer thereon; forming a first photo resist pattern exposing the chrome layer and forming a mask pattern including the chrome layer by selectively etching the exposed chrome layer; and removing the conductive layer pattern including the oxide and the first photo resist pattern.
摘要翻译：一种制造曝光掩模的方法，包括以下步骤：依次在透明石英衬底上形成铬层，第一光致抗蚀剂，Ag层作为导电层和第二光致抗蚀剂; 形成和使用第二光致抗蚀剂图案以通过蚀刻导电层形成导电层图案; 去除第二光刻胶图案; 形成用于屏蔽导电层图案的表面的光的氧化物层，并且使用其上具有氧化物层的导电层图案曝光第一光致抗蚀剂; 通过选择性地蚀刻暴露的铬层，形成暴露铬层并形成包括铬层的掩模图案的第一光刻胶图案; 以及去除包括氧化物和第一光致抗蚀剂图案的导电层图案。

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