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21. 发明申请

US20140015058A1 WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM 有权
标题翻译：通过使用LANTHANUM在晶体管制造后的高K门电极结构中的工作功能调整
公开(公告)号：US20140015058A1
公开(公告)日：2014-01-16
申请号：US13689992
申请日：2012-11-30
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

22. 发明申请

US20120315749A1 Metal Gate Stack Formation for Replacement Gate Technology 有权
标题翻译：用于替代门技术的金属门堆叠形成
公开(公告)号：US20120315749A1
公开(公告)日：2012-12-13
申请号：US13154578
申请日：2011-06-07
申请人： Klaus Hempel , Andy C. Wei , Robert Binder , Joachim Metzger
发明人： Klaus Hempel , Andy C. Wei , Robert Binder , Joachim Metzger
IPC分类号： H01L21/336
CPC分类号： H01L29/66545 , H01L21/28176 , H01L21/28202 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (Vt) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.
摘要翻译：通常，本文公开的主题涉及现代复杂的半导体器件及其形成方法，其中可以在基于替换栅极集成制造的HK / MG晶体管元件中实现降低的阈值电压（Vt）。本文公开的一种说明性方法包括在介电常数约为10或更大的栅介质材料层上形成第一金属栅电极材料层。该方法还包括将第一金属栅电极材料层暴露于氧扩散过程，在第一金属栅电极材料层上方形成第二金属栅电极材料层，并且至少在第一金属栅电极材料层上调整氧浓度梯度和氮浓度梯度第一金属栅电极材料层和栅介质材料层。

23. 发明申请

US20110266638A1 Semiconductor Device Comprising Contact Elements and Metal Silicide Regions Formed in a Common Process Sequence 审中-公开
标题翻译：包含接触元件的半导体器件和以常见工艺顺序形成的金属硅化物区域
公开(公告)号：US20110266638A1
公开(公告)日：2011-11-03
申请号：US12964020
申请日：2010-12-09
申请人： Kai Frohberg , Rainer Giedigkeit , Robert Binder , Stephan Waidmann
发明人： Kai Frohberg , Rainer Giedigkeit , Robert Binder , Stephan Waidmann
IPC分类号： H01L29/423 , H01L21/28
CPC分类号： H01L21/28518 , H01L29/6656 , H01L29/7833
摘要： A metal silicide in sophisticated semiconductor devices may be provided in a late manufacturing stage on the basis of contact openings, wherein the deposition of the contact material, such as tungsten, may be efficiently combined with the silicidation process. In this case, the thermally activated deposition process may initiate the formation of a metal silicide in highly doped semiconductor regions.
摘要翻译：复杂半导体器件中的金属硅化物可以基于接触开口在后期制造阶段中提供，其中诸如钨的接触材料的沉积可以有效地与硅化工艺组合。在这种情况下，热激活沉积工艺可以在高度掺杂的半导体区域中开始形成金属硅化物。

24. 发明申请

US20100327373A1 UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING 有权
标题翻译：通过在门控图案之前扩散金属物种调节放大晶体管的阈值电压来均质高K金属栅极堆叠
公开(公告)号：US20100327373A1
公开(公告)日：2010-12-30
申请号：US12787461
申请日：2010-05-26
申请人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
发明人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659
摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.
摘要翻译：在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

25. 发明申请

US20100193872A1 WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM 有权
标题翻译：通过使用LANTHANUM在晶体管制造后的高K门电极结构中的工作功能调整
公开(公告)号：US20100193872A1
公开(公告)日：2010-08-05
申请号：US12691192
申请日：2010-01-21
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

26. 发明授权

US07339891B2 Method and system for evaluating wireless applications 失效
标题翻译：评估无线应用的方法和系统
公开(公告)号：US07339891B2
公开(公告)日：2008-03-04
申请号：US10340348
申请日：2003-01-09
申请人： Robert Binder , James Hanlon
发明人： Robert Binder , James Hanlon
IPC分类号： H04L12/26
CPC分类号： H04W16/18 , H04L43/50 , H04W24/00
摘要： The present invention provides a method and system for evaluating wireless applications utilizing a test console, an application model builder, a test repository manager, a simulator, a test controller, test agents, and a comparator in order to test the performance of a plurality of mobile user devices on a wireless network.
摘要翻译：本发明提供了一种利用测试控制台，应用模型构建器，测试库管理器，模拟器，测试控制器，测试代理和比较器来评估无线应用的方法和系统，以便测试多个无线网络上的移动用户设备。

27. 发明申请

US20070183993A1 Personal care compositions 审中-公开
标题翻译：个人护理用品
公开(公告)号：US20070183993A1
公开(公告)日：2007-08-09
申请号：US11638255
申请日：2006-12-13
申请人： Robert Binder , Kotikanyadanam Sreekrishna , David Eickhoff , Larry Robinson , Rosemarie Osborne
发明人： Robert Binder , Kotikanyadanam Sreekrishna , David Eickhoff , Larry Robinson , Rosemarie Osborne
IPC分类号： A61K8/18
CPC分类号： A61K8/97 , A61K8/498 , A61K2800/70 , A61Q3/00 , A61Q5/00 , A61Q7/00 , A61Q19/08
摘要： Personal care compositions comprising a PPARG antagonist, use of such compositions, and methods of marketing such compositions. The personal care compositions can be applied topically, ingested orally, injected, or used as part of a regimen.
摘要翻译：包含PPARG拮抗剂，这种组合物的用途以及营销这种组合物的方法的个人护理组合物。个人护理组合物可以局部施用，口服摄取，注射或用作方案的一部分。

28. 发明授权

US6058605A Rectangular tube trimming process and apparatus 失效
标题翻译：矩形管修剪工艺及装置
公开(公告)号：US6058605A
公开(公告)日：2000-05-09
申请号：US902713
申请日：1997-07-30
申请人： Gerald Robert Binder , Bruce Daniel Kocer
发明人： Gerald Robert Binder , Bruce Daniel Kocer
IPC分类号： B23D21/00 , B23D21/02 , B23P15/00
CPC分类号： B23D21/02 , B23D21/00 , Y10T29/49622
摘要： A process for forming angled trim lines on vehicle frame cross members to mate and secure the ends of the cross members with frame side rail members with a high degree of accuracy and in a cost efficient manner. The process includes the steps of removing portions of the end of a rectangular tube to form angled trim lines and connecting the angled trim lines with the frame side rail member. A cam trimming die is used to form the angled trim lines. The die includes substantially symmetrical drivers, slide cams, and filler cams. The drivers move the slide cams and filler cams in opposing directions. The slide cams carry cutting steels that form the angled trim lines as the slide cam moves. The filler cams support the rectangular tube and produce a sheering effect with the cutting steels as they move past one another. The present invention simplifies and expedites the formation of trim lines on the ends of the rectangular cross members as well as obviates the need for expensive laser trimming and plasma arcing tools to form the trim lines on the cross member ends.
摘要翻译：一种用于在车架横梁上形成成角度的装饰线的方法，以高精度和成本有效的方式将横梁的端部与框架侧轨部件配合和固定。该方法包括以下步骤：去除矩形管的端部的部分以形成成角度的修剪线，并将成角度的修剪线与框架侧轨构件连接。凸轮修剪模具用于形成成角度的修剪线。模具包括基本对称的驱动器，滑动凸轮和填充凸轮。驱动器将滑动凸轮和加注凸轮移动到相反的方向。滑动凸轮带有当滑动凸轮移动时形成成角度的修剪线的切割钢。填料凸轮支撑矩形管，并在切割钢通过彼此时产生剪切效应。本发明简化并加速了在矩形横向构件的端部上形成修剪线，并且避免了昂贵的激光修整和等离子弧弧工具在横向构件端部上形成修剪线的需要。

29. 发明授权

US4657043A Oil pressure regulating valve 失效
标题翻译：油压调节阀
公开(公告)号：US4657043A
公开(公告)日：1987-04-14
申请号：US802433
申请日：1985-11-27
申请人： Herbert Ampferer , Robert Binder
发明人： Herbert Ampferer , Robert Binder
IPC分类号： F01M1/16 , F16K15/02 , F16K17/04
CPC分类号： F01M1/16 , Y10T137/7925 , Y10T137/7929 , Y10T137/7937
摘要： A pressure relief valve for a lubrication system of an internal combustion engine includes a valve body disposed within a generally cylindrical bore in a housing. The valve body is axially movable within the bore and is provided with a sealing surface on one end. A spring biases the sealing surface against a valve seat in the housing. A guide, which is preferably sleeve-shaped, is non-fixedly arranged within the bore for guiding the axial movement of the valve body and reducing the impact of manufacturing tolerance variations on valve operation. In a preferred embodiment, the sealing surface of the valve body is spherically shaped and the valve seat is conically shaped. A vent passage is provided in the sleeve-shaped guide to equalize pressures within the bore during operation of the valve.
摘要翻译：用于内燃机的润滑系统的减压阀包括设置在壳体中的大致圆柱形孔内的阀体。阀体可在孔内轴向移动，并在一端设有密封面。弹簧将密封表面偏压在壳体中的阀座上。优选为套筒形的导向件非固定地布置在孔内，用于引导阀体的轴向运动并减少制造公差变化对阀门操作的影响。在优选实施例中，阀体的密封表面是球形，并且阀座是圆锥形的。在套筒形引导件中设有排气通道，以在阀的操作过程中均衡孔内的压力。

30. 发明授权

US08445344B2 Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning 有权
标题翻译：通过在栅极图案化之前通过扩散金属物质来调整复杂晶体管的阈值电压，使均匀的高k金属栅极堆叠
公开(公告)号：US08445344B2
公开(公告)日：2013-05-21
申请号：US12787461
申请日：2010-05-26
申请人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
发明人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8238
CPC分类号： H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659
摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.
摘要翻译：在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

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