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21. 发明授权

US6058605A Rectangular tube trimming process and apparatus 失效
标题翻译：矩形管修剪工艺及装置
公开(公告)号：US6058605A
公开(公告)日：2000-05-09
申请号：US902713
申请日：1997-07-30
申请人： Gerald Robert Binder , Bruce Daniel Kocer
发明人： Gerald Robert Binder , Bruce Daniel Kocer
IPC分类号： B23D21/00 , B23D21/02 , B23P15/00
CPC分类号： B23D21/02 , B23D21/00 , Y10T29/49622
摘要： A process for forming angled trim lines on vehicle frame cross members to mate and secure the ends of the cross members with frame side rail members with a high degree of accuracy and in a cost efficient manner. The process includes the steps of removing portions of the end of a rectangular tube to form angled trim lines and connecting the angled trim lines with the frame side rail member. A cam trimming die is used to form the angled trim lines. The die includes substantially symmetrical drivers, slide cams, and filler cams. The drivers move the slide cams and filler cams in opposing directions. The slide cams carry cutting steels that form the angled trim lines as the slide cam moves. The filler cams support the rectangular tube and produce a sheering effect with the cutting steels as they move past one another. The present invention simplifies and expedites the formation of trim lines on the ends of the rectangular cross members as well as obviates the need for expensive laser trimming and plasma arcing tools to form the trim lines on the cross member ends.
摘要翻译：一种用于在车架横梁上形成成角度的装饰线的方法，以高精度和成本有效的方式将横梁的端部与框架侧轨部件配合和固定。该方法包括以下步骤：去除矩形管的端部的部分以形成成角度的修剪线，并将成角度的修剪线与框架侧轨构件连接。凸轮修剪模具用于形成成角度的修剪线。模具包括基本对称的驱动器，滑动凸轮和填充凸轮。驱动器将滑动凸轮和加注凸轮移动到相反的方向。滑动凸轮带有当滑动凸轮移动时形成成角度的修剪线的切割钢。填料凸轮支撑矩形管，并在切割钢通过彼此时产生剪切效应。本发明简化并加速了在矩形横向构件的端部上形成修剪线，并且避免了昂贵的激光修整和等离子弧弧工具在横向构件端部上形成修剪线的需要。

22. 发明授权

US4657043A Oil pressure regulating valve 失效
标题翻译：油压调节阀
公开(公告)号：US4657043A
公开(公告)日：1987-04-14
申请号：US802433
申请日：1985-11-27
申请人： Herbert Ampferer , Robert Binder
发明人： Herbert Ampferer , Robert Binder
IPC分类号： F01M1/16 , F16K15/02 , F16K17/04
CPC分类号： F01M1/16 , Y10T137/7925 , Y10T137/7929 , Y10T137/7937
摘要： A pressure relief valve for a lubrication system of an internal combustion engine includes a valve body disposed within a generally cylindrical bore in a housing. The valve body is axially movable within the bore and is provided with a sealing surface on one end. A spring biases the sealing surface against a valve seat in the housing. A guide, which is preferably sleeve-shaped, is non-fixedly arranged within the bore for guiding the axial movement of the valve body and reducing the impact of manufacturing tolerance variations on valve operation. In a preferred embodiment, the sealing surface of the valve body is spherically shaped and the valve seat is conically shaped. A vent passage is provided in the sleeve-shaped guide to equalize pressures within the bore during operation of the valve.
摘要翻译：用于内燃机的润滑系统的减压阀包括设置在壳体中的大致圆柱形孔内的阀体。阀体可在孔内轴向移动，并在一端设有密封面。弹簧将密封表面偏压在壳体中的阀座上。优选为套筒形的导向件非固定地布置在孔内，用于引导阀体的轴向运动并减少制造公差变化对阀门操作的影响。在优选实施例中，阀体的密封表面是球形，并且阀座是圆锥形的。在套筒形引导件中设有排气通道，以在阀的操作过程中均衡孔内的压力。

23. 发明授权

US08653605B2 Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum 有权
标题翻译：通过使用镧在晶体管制造后的高K栅电极结构中的功函数调整
公开(公告)号：US08653605B2
公开(公告)日：2014-02-18
申请号：US13689992
申请日：2012-11-30
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L21/70 , H01L27/088
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

24. 发明授权

US08652890B2 Methods for fabricating integrated circuits with narrow, metal filled openings 有权
标题翻译：用于制造具有窄的金属填充开口的集成电路的方法
公开(公告)号：US08652890B2
公开(公告)日：2014-02-18
申请号：US13408291
申请日：2012-02-29
申请人： Sven Schmidbauer , Dina H. Triyoso , Elke Erben , Hao Zhang , Robert Binder
发明人： Sven Schmidbauer , Dina H. Triyoso , Elke Erben , Hao Zhang , Robert Binder
IPC分类号： H01L21/338
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： Methods are provided for fabricating an integrated circuit that includes metal filled narrow openings. In accordance with one embodiment a method includes forming a dummy gate overlying a semiconductor substrate and subsequently removing the dummy gate to form a narrow opening. A layer of high dielectric constant insulator and a layer of work function-determining material are deposited overlying the semiconductor substrate. The layer of work function-determining material is exposed to a nitrogen ambient in a first chamber. A layer of titanium is deposited into the narrow opening in the first chamber in the presence of the nitrogen ambient to cause the first portion of the layer of titanium to be nitrided. The deposition of titanium continues, and the remaining portion of the layer of titanium is deposited as substantially pure titanium. Aluminum is deposited overlying the layer of titanium to fill the narrow opening and to form a gate electrode.
摘要翻译：提供了用于制造包括金属填充的窄开口的集成电路的方法。根据一个实施例，一种方法包括形成覆盖半导体衬底的虚拟栅极，随后去除虚拟栅极以形成窄的开口。在半导体衬底上沉积一层高介电常数绝缘体和一层功函数确定材料。工作层功能确定材料暴露于第一室中的氮气环境。在氮气环境的存在下，将钛层沉积在第一室中的窄开口中，以使钛层的第一部分被氮化。钛的沉积继续，并且钛层的剩余部分沉积为基本上纯的钛。沉积铝覆盖在钛层上以填充窄开口并形成栅电极。

25. 发明授权

US08343837B2 Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum 有权
标题翻译：通过使用镧在晶体管制造后的高k栅电极结构中的功函数调整
公开(公告)号：US08343837B2
公开(公告)日：2013-01-01
申请号：US12691192
申请日：2010-01-21
申请人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
发明人： Richard Carter , Sven Beyer , Joachim Metzger , Robert Binder
IPC分类号： H01L21/8234 , H01L21/8238
CPC分类号： H01L27/088 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.
摘要翻译：高k栅电极结构的功函数可以在后期制造阶段基于N沟道晶体管中的镧种类进行调整，从而获得与典型的导电阻挡材料结合的期望的高功函数，例如作为氮化钛。为此，在一些说明性实施例中，可以在先前提供的含金属的电极材料上直接形成镧类物质，同时可以在P沟道晶体管中提供有效的阻挡材料，从而避免镧类物质的过度相互作用 P沟道晶体管。

26. 发明授权

US08324091B2 Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition 有权
标题翻译：通过在沉积后限制金属盖层来提高高k栅极堆叠的完整性
公开(公告)号：US08324091B2
公开(公告)日：2012-12-04
申请号：US12711481
申请日：2010-02-24
申请人： Joachim Metzger , Robert Binder , Markus Lenski , Klaus Hempel
发明人： Joachim Metzger , Robert Binder , Markus Lenski , Klaus Hempel
IPC分类号： H01L21/3205
CPC分类号： H01L29/7833 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66772
摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.
摘要翻译：在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

27. 发明申请

US20100301427A1 WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER 有权
标题翻译：通过选择性去除障碍层，高K金属电极结构的工作功能调整
公开(公告)号：US20100301427A1
公开(公告)日：2010-12-02
申请号：US12785185
申请日：2010-05-21
申请人： Markus Lenski , Klaus Hempel , Vivien Schroeder , Robert Binder , Joachim Metzger
发明人： Markus Lenski , Klaus Hempel , Vivien Schroeder , Robert Binder , Joachim Metzger
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/82345 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/7833 , H01L29/7843
摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.
摘要翻译：在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数。

28. 发明申请

US20090038194A1 HOLDER FOR HANDICAP PERMIT 有权
标题翻译：持有人手持许可证
公开(公告)号：US20090038194A1
公开(公告)日：2009-02-12
申请号：US12189436
申请日：2008-08-11
申请人： Robert Binder , James L. Gerback
发明人： Robert Binder , James L. Gerback
IPC分类号： G09F21/04 , G09F3/08
CPC分类号： G09F21/04 , G09F3/08 , Y10S248/909
摘要： A kit for use in securing a vehicular handicap permit to the interior of a vehicle windshield so that the permit is visible through the windshield includes a strip having Velcro on one side and a pressure-sensitive adhesive on the opposite side. The kit also includes a permit holder with pressure-sensitive adhesive on one side and a Velcro strip on the opposite side. The holder is secured to the permit by folding the holder so that two sections of the adhesive coating face one another and pressing the two sections against two sides of the permit adjacent to edges of the permit. The Velcro on the exposed side of the holder may then be secured to the Velcro on the strip, which is attached to the windshield by its pressure-sensitive coating so that the permit hangs downwardly behind the windshield.
摘要翻译：一种用于将车辆障碍物许可证固定在车辆挡风玻璃内部使得通过挡风玻璃可见的许可证的工具包括在一侧具有魔术贴和相对侧上的压敏粘合剂的条带。该套件还包括一侧的压敏粘合剂许可证夹和相对侧的魔术贴条。保持器通过折叠保持器固定到许可证上，使得粘合剂涂层的两个部分彼此面对并且将两个部分压靠在容许物的边缘附近的许可证的两侧。然后可以将保持器的露出侧上的魔术贴固定到条带上的魔术贴，该贴纸通过其压敏涂层附接到挡风玻璃上，使得许可证在挡风玻璃后方向下悬挂。

29. 发明授权

US4832664A Guide rail for drive chains 失效
标题翻译：驱动链导轨
公开(公告)号：US4832664A
公开(公告)日：1989-05-23
申请号：US161105
申请日：1988-02-26
申请人： Klaus Groger , Walter Mittermeier , Robert Binder , Volker Diehm
发明人： Klaus Groger , Walter Mittermeier , Robert Binder , Volker Diehm
IPC分类号： F02B67/04 , F01L1/02 , F02B67/06 , F16H7/08 , F16H7/18
CPC分类号： F01L1/02 , F01L1/022 , F16H7/18 , F16H2007/0872 , F16H2007/185
摘要： A guide rail, and method of making same, for the guiding and/or tightening of chains that are used in internal-combustion engines, for example, for driving camshafts, auxiliaries or the like is disclosed. For reasons concerning weight and manufacturing, the guide rail consists of a plastic material and is formed by a slideway lining body and a carrier. Both the carrier and the slideway lining body are produced in a progressive manufacturing cycle and are interconnected via one or several dovetailed connections.
摘要翻译：公开了一种导轨及其制造方法，用于引导和/或紧固用于内燃机中的链条，例如用于驱动凸轮轴，辅助设备等。由于重量和制造的原因，导轨由塑料材料构成，并由滑道衬里体和载体形成。载体和滑道衬里体均以逐步制造周期生产，并通过一个或多个燕尾连接相互连接。

30. 发明授权

US08445344B2 Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning 有权
标题翻译：通过在栅极图案化之前通过扩散金属物质来调整复杂晶体管的阈值电压，使均匀的高k金属栅极堆叠
公开(公告)号：US08445344B2
公开(公告)日：2013-05-21
申请号：US12787461
申请日：2010-05-26
申请人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
发明人： Richard Carter , Falk Graetsch , Martin Trentzsch , Sven Beyer , Berthold Reimer , Robert Binder , Boris Bayha
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8238
CPC分类号： H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659
摘要： Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.
摘要翻译：在基本上相同的构造的基础上对N沟道晶体管和P沟道晶体管的复杂的栅电极结构进行构图，然而，可以在早期制造阶段完成功函数调整。为此，在将期望的功函数金属物质并入高k电介质材料中之后去除扩散层和覆盖层材料，随后沉积公共栅层堆叠并随后构图。

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