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    • 24. 发明申请
    • SEMICONDUCTOR CIRCUIT DEVICE INCLUDING SWITCHING ELEMENT
    • 包括开关元件的半导体电路设备
    • US20110309776A1
    • 2011-12-22
    • US13042791
    • 2011-03-08
    • Noboru MIYAMOTO
    • Noboru MIYAMOTO
    • H02P27/06
    • H02P27/06H02M2001/0029
    • A semiconductor circuit device includes a semiconductor circuit including a switching element, a temperature monitoring unit, and a control unit. The temperature monitoring unit detects or estimates a temperature of a component connected to an inside or an outside of the semiconductor circuit. Here, the temperature of the component changes in accordance with a frequency of a current flowing through the component, and the frequency of the current flowing through the component changes in accordance with a switching frequency of the switching element. The control unit adjusts the switching frequency of the switching element such that the temperature of the component is equal to a target temperature.
    • 半导体电路器件包括具有开关元件,温度监控单元和控制单元的半导体电路。 温度监视单元检测或估计连接到半导体电路的内部或外部的部件的温度。 这里,元件的温度根据流过元件的电流的频率而变化,流过元件的电流的频率根据开关元件的开关频率而变化。 控制单元调节开关元件的开关频率,使得元件的温度等于目标温度。
    • 26. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07777533B2
    • 2010-08-17
    • US12116570
    • 2008-05-07
    • Noboru MiyamotoNatsuki Tsuji
    • Noboru MiyamotoNatsuki Tsuji
    • H03B1/00H03K3/00
    • H02M1/38H02M2001/385H03K17/0828H03K17/165
    • The present invention provides a semiconductor device includes arms formed by two semiconductor elements, a map memory device which stores therein a correlation map between a control value for each of the arms and an optimized dead time to be set for the control value or is capable of storing the same therein, drive control value acquiring means for acquiring a drive control value of each of the arms, and a dead time generating circuit for extracting the optimized dead time corresponding to the drive control value from the correlation map. The time taken until the other of the semiconductor elements is turned on after one thereof has received a command to turn off the same is the optimized dead time extracted by the dead time generating circuit.
    • 本发明提供了一种半导体器件,包括由两个半导体元件形成的臂,地图存储器件,其中存储有用于每个臂的控制值与要设置的控制值的优化死区时间之间的相关图,或者能够 存储其中的驱动控制值获取装置,用于获取每个臂的驱动控制值;以及死区时间生成电路,用于从相关图提取与驱动控制值相对应的优化死区时间。 在其中一个半导体元件中的一个已经接收到关闭它的命令之后,其余的半导体元件所经过的时间是由死区时间产生电路提取的优化的死区时间。
    • 27. 发明申请
    • Temperature detection system
    • 温度检测系统
    • US20090161726A1
    • 2009-06-25
    • US12137916
    • 2008-06-12
    • Noboru MiyamotoAkira Yamamoto
    • Noboru MiyamotoAkira Yamamoto
    • G01K7/00
    • G01K7/42G01K7/01
    • A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.
    • 温度检测系统包括功率半导体装置,用于检测功率半导体装置的温度的芯片温度检测装置,损失相关特性值获取装置,用于获取作为决定损耗的特性的损失相关特性值 功率半导体装置,差值计算装置,用于根据损耗相关特性值计算功率半导体器件的温度与由芯片温度检测装置检测的温度之间的差值;校正温度信号产生部分,用于产生 通过将由芯片温度检测装置检测到的温度和差值相加来校正温度信号,以及输出部分,用于将校正的温度信号输出到外部。