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21. 发明授权

US08053386B2 Heteropoly acid catalyst and method of preparing the same 有权
标题翻译：杂多酸催化剂及其制备方法
公开(公告)号：US08053386B2
公开(公告)日：2011-11-08
申请号：US12312824
申请日：2007-11-29
申请人： Gyo-hyun Hwang , Min-ho Kil , Hyun-kuk Noh , Won-ho Lee , Min-suk Kim
发明人： Gyo-hyun Hwang , Min-ho Kil , Hyun-kuk Noh , Won-ho Lee , Min-suk Kim
IPC分类号： B01J27/198 , B01J27/00 , B01J27/188 , B01J27/19 , B01J27/192 , B01J23/00 , B01J23/32
CPC分类号： B01J27/199 , B01J23/002 , B01J37/0009 , B01J37/03 , B01J2523/00 , C07C51/252 , C07C57/04 , B01J2523/13 , B01J2523/15 , B01J2523/17 , B01J2523/3706 , B01J2523/51 , B01J2523/53 , B01J2523/55 , B01J2523/68 , B01J2523/842
摘要： The present invention relates to a heteropoly acid catalyst which is used for the production of methacrylic acid by gas phase oxidation of methacrolein and a preparing method thereof. The present invention, thereby, provides a novel heteropoly acid catalyst having excellent methacrolein conversion rate, methacrylic acid selectivity and yield.
摘要翻译：本发明涉及用于通过甲基丙烯醛的气相氧化生产甲基丙烯酸的杂多酸催化剂及其制备方法。因此，本发明提供了具有优异的甲基丙烯醛转化率，甲基丙烯酸选择性和产率的新型杂多酸催化剂。

22. 发明授权

US07972874B2 Semiconductor process evaluation methods including variable ion implanting conditions 有权
标题翻译：包括可变离子注入条件的半导体工艺评估方法
公开(公告)号：US07972874B2
公开(公告)日：2011-07-05
申请号：US12834201
申请日：2010-07-12
申请人： Won-bae Jang , Seung-chul Kim , Chan-seung Choi , Min-suk Kim , Chee-wan Kim , Sun-yong Lee , Sang-rok Hah
发明人： Won-bae Jang , Seung-chul Kim , Chan-seung Choi , Min-suk Kim , Chee-wan Kim , Sun-yong Lee , Sang-rok Hah
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.
摘要翻译：半导体工艺评估方法在不同离子注入条件下使用离子束进行测试半导体衬底（例如，测试晶片）的多次扫描。然后测量在不同离子注入条件下使用离子束扫描的测试半导体衬底的参数，以进行半导体工艺评估。

23. 发明授权

US07777524B2 High voltage semiconductor device having shifters and method of fabricating the same 有权
标题翻译：具有移位器的高电压半导体器件及其制造方法
公开(公告)号：US07777524B2
公开(公告)日：2010-08-17
申请号：US12402528
申请日：2009-03-12
申请人： Chang-ki Jeon , Min-suk Kim , Yong-cheol Choi
发明人： Chang-ki Jeon , Min-suk Kim , Yong-cheol Choi
IPC分类号： H03K19/0175
CPC分类号： H01L27/088 , H01L21/823481
摘要： Provided are a high-voltage semiconductor device including a junction termination which electrically isolates a low voltage unit from a high voltage unit, and a method of fabricating the same. The high voltage semiconductor device includes a high voltage unit, a low voltage unit surrounding the high voltage unit, and a junction termination formed between the high voltage unit and the low voltage unit and surrounding the high voltage unit to electrically isolate the high voltage unit from the low voltage unit. The junction termination includes at least one level shifter which level shifts signals from the low voltage unit and supplies the same to the high voltage unit, a first device isolation region surrounding the high voltage unit to electrically isolate the high voltage unit from the level shifter, and a resistor layer electrically connecting neighboring level shifters.
摘要翻译：提供一种包括将低电压单元与高电压单元电隔离的接合端子的高压半导体器件及其制造方法。高电压半导体器件包括高电压单元，围绕高电压单元的低电压单元，以及形成在高电压单元和低电压单元之间并且围绕高电压单元的连接端子，以将高压单元与低压单位。所述连接终端包括至少一个电平移位器，其将来自所述低电压单元的信号电平移位并将其提供给所述高压单元;围绕所述高压单元的第一器件隔离区，以将所述高压单元与所述电平移位器电隔离; 以及电连接相邻电平移位器的电阻层。

24. 发明申请

US20100069230A1 HETEROPOLY ACID CATALYST AND METHOD OF PREPARING THE SAME 有权
标题翻译：异戊酸催化剂及其制备方法
公开(公告)号：US20100069230A1
公开(公告)日：2010-03-18
申请号：US12312824
申请日：2007-11-29
申请人： Gyo-hyun Hwang , Min-Ho Kim , Hyun-kuk Noh , Won-ho Lee , Min-suk Kim
发明人： Gyo-hyun Hwang , Min-Ho Kim , Hyun-kuk Noh , Won-ho Lee , Min-suk Kim
IPC分类号： B01J27/198
CPC分类号： B01J27/199 , B01J23/002 , B01J37/0009 , B01J37/03 , B01J2523/00 , C07C51/252 , C07C57/04 , B01J2523/13 , B01J2523/15 , B01J2523/17 , B01J2523/3706 , B01J2523/51 , B01J2523/53 , B01J2523/55 , B01J2523/68 , B01J2523/842
摘要： The present invention relates to a heteropoly acid catalyst which is used for the production of methacrylic acid by gas phase oxidation of methacrolein and a preparing method thereof. The present invention, thereby, provides a novel heteropoly acid catalyst having excellent methacrolein conversion rate, methacrylic acid selectivity and yield.
摘要翻译：本发明涉及用于通过甲基丙烯醛的气相氧化生产甲基丙烯酸的杂多酸催化剂及其制备方法。因此，本发明提供了具有优异的甲基丙烯醛转化率，甲基丙烯酸选择性和产率的新型杂多酸催化剂。

25. 发明申请

US20100001343A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING FIELD SHAPING LAYER AND METHOD OF FABRICATING THE SAME 有权
标题翻译：包括场形成层的高压半导体器件及其制造方法
公开(公告)号：US20100001343A1
公开(公告)日：2010-01-07
申请号：US12495948
申请日：2009-07-01
申请人： Yong-cheol CHOI , Chang-ki JEON , Min-suk KIM
发明人： Yong-cheol CHOI , Chang-ki JEON , Min-suk KIM
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66681 , H01L29/0634 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/41758 , H01L29/42368 , H01L29/7816
摘要： Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.
摘要翻译：提供一种在半导体衬底的整个表面上形成场成形层的高电压半导体器件及其制造方法。具体地，高电压半导体器件包括第一导电型半导体衬底。在半导体衬底的表面上设置第二导电型半导体层，在半导体层中形成第一导电型体区。在体区域中形成第二导电型源极区域。在半导体层中形成漏区，与体区分离。在与半导体层相对的半导体层的整个表面上形成场成形层。

26. 发明申请

US20080190266A1 METHOD AND TERMINAL FOR PLAYING AND DISPLAYING MUSIC 有权
标题翻译：播放和显示音乐的方法和终端
公开(公告)号：US20080190266A1
公开(公告)日：2008-08-14
申请号：US12027030
申请日：2008-02-06
申请人： Hyo Young KIM , Min Suk KIM , Dok Shin LIM , Andrea KIM , Hee Kyung JEON , Kyoung Ae LIM , Min Soo KWON , Hye Won LEE
发明人： Hyo Young KIM , Min Suk KIM , Dok Shin LIM , Andrea KIM , Hee Kyung JEON , Kyoung Ae LIM , Min Soo KWON , Hye Won LEE
IPC分类号： G10H7/00
CPC分类号： G11B27/34 , G06F3/0488 , G11B27/105 , G11B2220/61
摘要： A method and a terminal for playing and displaying music are provided. The method includes selecting a desired track in a playback mode, playing the selected track, displaying information about the selected track and a playing progress bar and displaying a current play time for the selected track and a position corresponding to the current play time on the playing progress bar in order to update playing progress information. The method and terminal enable a user to adjust the playback and selection of tracks through a novel interface, thereby providing increased convenience for a user of a terminal equipped with a music player.
摘要翻译：提供了播放和显示音乐的方法和终端。该方法包括：在回放模式中选择期望的曲目，播放所选择的曲目，显示关于所选曲目的信息和播放进度条，并显示所选曲目的当前播放时间和与播放时的当前播放时间相对应的位置进度条，以更新播放进度信息。该方法和终端使得用户能够通过新颖的界面来调整音轨的播放和选择，从而为配备有音乐播放器的终端的用户提供了更多便利。

27. 发明申请

US20070155028A1 Semiconductor Process Evaluation Methods Including Variable Ion Implanting Conditions 有权
标题翻译：包括可变离子注入条件的半导体工艺评估方法
公开(公告)号：US20070155028A1
公开(公告)日：2007-07-05
申请号：US11563756
申请日：2006-11-28
申请人： Won-bae Jang , Seung-chul Kim , Chan-seung Choi , Min-suk Kim , Chee-wan Kim , Sun-yong Lee , Sang-rok Hah
发明人： Won-bae Jang , Seung-chul Kim , Chan-seung Choi , Min-suk Kim , Chee-wan Kim , Sun-yong Lee , Sang-rok Hah
IPC分类号： H01L21/66
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.
摘要翻译：半导体工艺评估方法在不同离子注入条件下使用离子束进行测试半导体衬底（例如，测试晶片）的多次扫描。然后测量在不同离子注入条件下使用离子束扫描的测试半导体衬底的参数，以进行半导体工艺评估。

28. 发明申请

US20120001770A1 SYSTEM AND METHOD OF PROVIDING TRAFFIC INFORMATION WITH TURNING INFORMATION AT INTERSECTIONS 审中-公开
标题翻译：用交互信息提供交通信息的系统和方法
公开(公告)号：US20120001770A1
公开(公告)日：2012-01-05
申请号：US13169431
申请日：2011-06-27
申请人： Chi Nam Oh , Tae Soo Kim , Sung Hwan Park , Young Eon Ma , Min Suk Kim
发明人： Chi Nam Oh , Tae Soo Kim , Sung Hwan Park , Young Eon Ma , Min Suk Kim
IPC分类号： G08G1/09
CPC分类号： G08G1/20 , G08G1/0112 , G08G1/0133
摘要： A technology is provided that improves reliability of traffic information guidance by reflecting traffic information for each turning direction. A system of providing traffic information with intersection turning information includes a vehicle information collection unit is configured to collect vehicle information and a control unit is configured to calculate general link speed, travelling speed for each turning direction and link speed for each turning direction at an intersection using the collected vehicle information.
摘要翻译：提供了通过反映每个转向方向的交通信息来提高交通信息指导的可靠性的技术。提供具有交叉路口信息的交通信息的系统包括车辆信息收集单元，其被配置为收集车辆信息，并且控制单元被配置为计算一般链路速度，每个转弯方向的行进速度和交叉路口处的每个转弯方向的链接速度使用收集的车辆信息。

29. 发明申请

US20090243696A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING SHIFTERS AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有变形器的高电压半导体器件及其制造方法
公开(公告)号：US20090243696A1
公开(公告)日：2009-10-01
申请号：US12402528
申请日：2009-03-12
申请人： Chang-ki Jeon , Min-suk Kim , Yong-cheol Choi
发明人： Chang-ki Jeon , Min-suk Kim , Yong-cheol Choi
IPC分类号： H03L5/00 , H01L21/76
CPC分类号： H01L27/088 , H01L21/823481
摘要： Provided are a high-voltage semiconductor device including a junction termination which electrically isolates a low voltage unit from a high voltage unit, and a method of fabricating the same. The high voltage semiconductor device includes a high voltage unit, a low voltage unit surrounding the high voltage unit, and a junction termination formed between the high voltage unit and the low voltage unit and surrounding the high voltage unit to electrically isolate the high voltage unit from the low voltage unit. The junction termination includes at least one level shifter which level shifts signals from the low voltage unit and supplies the same to the high voltage unit, a first device isolation region surrounding the high voltage unit to electrically isolate the high voltage unit from the level shifter, and a resistor layer electrically connecting neighboring level shifters.
摘要翻译：提供一种包括将低电压单元与高电压单元电隔离的接合端子的高压半导体器件及其制造方法。高电压半导体器件包括高电压单元，围绕高电压单元的低电压单元，以及形成在高电压单元和低电压单元之间并且围绕高电压单元的连接端子，以将高压单元与低压单位。所述连接终端包括至少一个电平移位器，其将来自所述低电压单元的信号电平移位并将其提供给所述高压单元;围绕所述高压单元的第一器件隔离区，以将所述高压单元与所述电平移位器电隔离; 以及电连接相邻电平移位器的电阻层。

30. 发明申请

US20080192021A1 ONSCREEN FUNCTION EXECUTION METHOD FOR MOBILE TERMINAL HAVING A TOUCHSCREEN 有权
标题翻译：具有触摸屏功能的移动终端的功能执行方法
公开(公告)号：US20080192021A1
公开(公告)日：2008-08-14
申请号：US12014056
申请日：2008-01-14
申请人： Wan Soo LIM , Hyo Young KIM , Dok Shin LIM , Kyoung Ae LIM , Min Suk KIM , Young Sun SHIN , Hee Kyung JEON
发明人： Wan Soo LIM , Hyo Young KIM , Dok Shin LIM , Kyoung Ae LIM , Min Suk KIM , Young Sun SHIN , Hee Kyung JEON
IPC分类号： G06F3/041
CPC分类号： H04N5/23216 , G06F3/041 , G06F3/044 , G06F3/04817 , G06F3/0482 , G06F3/04847 , G06F3/0488 , G06F3/04883 , H04N5/23212 , H04N5/23222 , H04N5/23293
摘要： An onscreen function execution method for a mobile terminal having a touchscreen is provided. The method allows for executing functions of an activated application by a tap on a specific area of the touchscreen. An onscreen function execution method of the present invention includes mapping active regions of the touchscreen to functions of at least one application, displaying an application screen in response to an application activation command and executing, if a tap is detected on one of the active regions, a function mapped to the application activation command. The active regions may include a function execution display region and the applications may comprise a camera application, a music player application, an idle mode screen application and the like. The method allows a user to execute functions of an activated application by tap on the touchscreen.
摘要翻译：提供了具有触摸屏的移动终端的屏幕功能执行方法。该方法允许通过在触摸屏的特定区域上的点击来执行激活的应用的功能。本发明的屏幕功能执行方法包括将触摸屏的活动区域映射到至少一个应用的功能，响应于应用激活命令显示应用屏幕，并且如果在一个活动区域上检测到抽头，则执行，映射到应用程序激活命令的函数。有源区域可以包括功能执行显示区域，并且应用可以包括照相机应用，音乐播放器应用，空闲模式屏幕应用等。该方法允许用户通过点击触摸屏来执行激活的应用的功能。

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