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21. 发明授权

US06410901B1 Image sensor having blooming effect preventing circuitry 有权
标题翻译：具有防溢出效果的电路的图像传感器
公开(公告)号：US06410901B1
公开(公告)日：2002-06-25
申请号：US09693185
申请日：2000-10-19
申请人： Jae-Dong Lee , Ju-Il Lee
发明人： Jae-Dong Lee , Ju-Il Lee
IPC分类号： H01L2700
CPC分类号： H04N5/3594 , H01L27/14654
摘要： An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each unit pixel includes a light sensing element for sensing a light beam incident thereto and generating photoelectric charges, a transferring unit for transferring the photoelectric charges to a sensing node, a first resetting unit for making a fully depleted region within the light sensing element and resetting the sensing node by providing a power supply voltage to the sensing node, and a second resetting unit for transferring excess charges generated in the light sensing element to a power line when the sensing node is reset.
摘要翻译：图像传感器包括用于感测光束以生成图像数据的多个单位像素。每个单位像素包括用于感测入射到其上的光束并产生光电电荷的光感测元件，用于将光电电荷传送到感测节点的转移单元，用于在光感测元件内形成完全耗尽区域的第一复位单元所述感测节点通过向所述感测节点提供电源电压;以及第二复位单元，用于当所述感测节点被复位时，将在所述感光元件中产生的多余电荷转移到电力线。

22. 发明授权

US5668064A Method of forming a tungsten plug in a semiconductor device 失效
标题翻译：在半导体器件中形成钨插塞的方法
公开(公告)号：US5668064A
公开(公告)日：1997-09-16
申请号：US606305
申请日：1996-02-23
申请人： Sang Hoon Park , Dong Sauk Kim , Ju Il Lee
发明人： Sang Hoon Park , Dong Sauk Kim , Ju Il Lee
IPC分类号： H01L21/768 , H01L23/522 , H01L21/60
CPC分类号： H01L21/76838 , H01L23/5226 , H01L2924/0002
摘要： The present invention discloses a method of forming a tungsten plug within a via hole in which it sequentially forms a barrier metal layer and a tungsten layer on a insulating film including the via hole, forms a photoresist pattern of which size is enough to cover the via hole on the tungsten layer in the upper side of the via hole, etching the tungsten layer by sequentially performing an isotropic etching process and an anisotropic etching process using the photoresist pattern as an etching mask and, after the photoresist pattern is removed, etching the projections of the tungsten layer by performing the anisotropic etching process.
摘要翻译：本发明公开了一种在通孔内形成钨插塞的方法，其中它依次在包括通孔的绝缘膜上形成阻挡金属层和钨层，形成尺寸足以覆盖通孔的光致抗蚀剂图案在通孔的上侧的钨层上的孔，通过依次进行各向同性蚀刻工艺和使用光致抗蚀剂图案作为蚀刻掩模的各向异性蚀刻工艺蚀刻钨层，并且在除去光致抗蚀剂图案之后，蚀刻突起通过进行各向异性蚀刻处理。

23. 发明授权

US08895936B2 Pixel array and image sensor including the same 有权
标题翻译：像素阵列和图像传感器包括相同的
公开(公告)号：US08895936B2
公开(公告)日：2014-11-25
申请号：US13342437
申请日：2012-01-03
申请人： Man Lyun Ha , Ju Il Lee , Sun Choi
发明人： Man Lyun Ha , Ju Il Lee , Sun Choi
IPC分类号： G01T1/24 , H04N5/3745 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14625 , H01L27/14627 , H04N5/37457
摘要： A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.
摘要翻译：根据实施例，像素阵列和图像传感器包括具有改进的灵敏度的像素阵列并且可以驱动具有高分辨率的像素。在实施例中，像素阵列可以包括具有像素区域和逻辑区域的多个像素。像素阵列可以包括以下各项中的至少一个：（1）每个像素的像素区域中的光电转换单元。（2）设置在像素区域中的光电转换单元一侧的像素区域晶体管。（3）像素区域晶体管上的金属层0。（4）在金属层0上和/或上方的金属-1层。（5）在金属-1层上和/或上方的光接收单元，金属层1是像素区域中的顶层金属层。

24. 发明授权

US08824090B2 Methods and devices for compensating for off-track motion 有权
标题翻译：用于补偿离轨运动的方法和装置
公开(公告)号：US08824090B2
公开(公告)日：2014-09-02
申请号：US13300920
申请日：2011-11-21
申请人： Timothy E Langlais , Ju-IL Lee , Frank W Bernett , Chiyun Xia
发明人： Timothy E Langlais , Ju-IL Lee , Frank W Bernett , Chiyun Xia
IPC分类号： G11B21/02 , G11B5/55 , G11B5/596
CPC分类号： G11B5/5582 , G11B5/59694
摘要： In certain embodiments, a method includes sensing a mode of a motor-base assembly's response to vibration. Based on the sensed response, the method includes adjusting a head-suspension assembly to compensate for off-track motion caused by the vibration.In certain embodiments, an apparatus includes a sensor positioned on a basedeck such that the sensor senses a mode of the motor-base assembly's response to linear vibration.
摘要翻译：在某些实施例中，一种方法包括感测电动机组件对振动的响应的模式。基于感测到的响应，该方法包括调整头悬架组件以补偿由振动引起的偏离轨道运动。在某些实施例中，设备包括位于基础上的传感器，使得传感器感测到电动机基座组件对线性振动的响应的模式。

25. 发明授权

US08629023B2 CMOS image sensor having double gate insulator therein and method for manufacturing the same 有权
标题翻译：具有双栅极绝缘体的CMOS图像传感器及其制造方法
公开(公告)号：US08629023B2
公开(公告)日：2014-01-14
申请号：US13424957
申请日：2012-03-20
申请人： Ju-Il Lee
发明人： Ju-Il Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.
摘要翻译：一种制造CMOS图像传感器的方法，包括：通过外延生长半导体衬底的上部来制备其中并入有p型外延层的半导体衬底; 在所述半导体衬底的一个预定位置中形成像素阵列，所述像素阵列具有多个晶体管和其中的光电二极管，其中每个晶体管采用厚度范围从-40到90的栅极绝缘体; 以及在所述半导体衬底的另一个预定位置中形成逻辑电路，所述逻辑电路具有至少一个晶体管，其中所述晶体管采用厚度范围为从...的栅极绝缘体。

26. 发明授权

US08163591B2 Backside illuminated image sensor 有权
标题翻译：背面照明图像传感器
公开(公告)号：US08163591B2
公开(公告)日：2012-04-24
申请号：US12956975
申请日：2010-11-30
申请人： Sung-Hyung Park , Ju-Il Lee
发明人： Sung-Hyung Park , Ju-Il Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14629 , H01L27/1464
摘要： A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.
摘要翻译：背面照明图像传感器包括形成在半导体衬底的顶表面下方的光电二极管，用于接收从半导体衬底的背面照射的光以产生光电电荷;反射门，形成在光电二极管的上表面上半导体衬底，用于反射从衬底的背面照射的光并接收偏置以控制光电二极管的耗尽区;以及传输门，用于将光电荷从光电二极管传送到像素的感测节点。

27. 发明授权

US08143626B2 CMOS image sensor having double gate insulator therein 有权
标题翻译：具有双栅极绝缘体的CMOS图像传感器
公开(公告)号：US08143626B2
公开(公告)日：2012-03-27
申请号：US12723409
申请日：2010-03-12
申请人： Ju-Il Lee
发明人： Ju-Il Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.
摘要翻译：一种制造CMOS图像传感器的方法，包括：通过外延生长半导体衬底的上部来制备其中并入有p型外延层的半导体衬底; 在所述半导体衬底的一个预定位置中形成像素阵列，所述像素阵列具有多个晶体管和其中的光电二极管，其中每个晶体管采用厚度范围从-40到90的栅极绝缘体; 以及在所述半导体衬底的另一个预定位置中形成逻辑电路，所述逻辑电路具有至少一个晶体管，其中所述晶体管采用厚度范围为从...的栅极绝缘体。

28. 发明授权

US07965459B2 Wavelets-based detection of proximity between a sensor and an object 有权
标题翻译：基于小波检测传感器和物体之间的接近度
公开(公告)号：US07965459B2
公开(公告)日：2011-06-21
申请号：US12338375
申请日：2008-12-18
申请人： Ramakrishnan Narayanan , Ju-il Lee , Mark David Bedillion
发明人： Ramakrishnan Narayanan , Ju-il Lee , Mark David Bedillion
IPC分类号： G11B27/36 , G11B21/02
CPC分类号： G11B5/455 , G11B5/40 , G11B5/4555 , G11B5/6005 , G11B5/6029
摘要： A circuit includes a proximity detection component that applies wavelet analysis to a sensed signal from a sensor and responsively provides an output indicative of whether proximity exists between the sensor and an object that causes the sensor to produce the sensed signal.
摘要翻译：电路包括接近检测部件，其将小波分析应用于来自传感器的感测信号，并且响应地提供指示传感器和导致传感器产生感测信号的物体之间是否存在接近度的输出。

29. 发明申请

US20100157485A1 WAVELETS-BASED DETECTION OF PROXIMITY BETWEEN A SENSOR AND AN OBJECT 有权
标题翻译：传感器和对象之间的基于波段的检测
公开(公告)号：US20100157485A1
公开(公告)日：2010-06-24
申请号：US12338375
申请日：2008-12-18
申请人： Ramakrishnan Narayanan , Ju-il Lee , Mark David Bedillion
发明人： Ramakrishnan Narayanan , Ju-il Lee , Mark David Bedillion
IPC分类号： G11B5/33 , G11B5/00
CPC分类号： G11B5/455 , G11B5/40 , G11B5/4555 , G11B5/6005 , G11B5/6029
摘要： A circuit includes a proximity detection component that applies wavelet analysis to a sensed signal from a sensor and responsively provides an output indicative of whether proximity exists between the sensor and an object that causes the sensor to produce the sensed signal.
摘要翻译：电路包括接近检测部件，其将小波分析应用于来自传感器的感测信号，并且响应地提供指示传感器和导致传感器产生感测信号的物体之间是否存在接近度的输出。

30. 发明申请

US20070120159A1 CMOS image sensor having duble gate insulator therein and method for manufacturing the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20070120159A1
公开(公告)日：2007-05-31
申请号：US11657908
申请日：2007-01-24
申请人： Ju-Il Lee
发明人： Ju-Il Lee
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.
摘要翻译：一种制造CMOS图像传感器的方法，包括：通过外延生长半导体衬底的上部来制备其中并入有p型外延层的半导体衬底; 在所述半导体衬底的一个预定位置中形成像素阵列，所述像素阵列具有多个晶体管和其中的光电二极管，其中每个晶体管采用厚度范围从-40到90的栅极绝缘体; 以及在所述半导体衬底的另一个预定位置中形成逻辑电路，所述逻辑电路具有至少一个晶体管，其中所述晶体管采用厚度范围为从...的栅极绝缘体。

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