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21. 发明授权

US5646072A Electronic sensor assembly having metal interconnections isolated from adverse media 失效
标题翻译：具有与不良介质隔离的金属互连的电子传感器组件
公开(公告)号：US5646072A
公开(公告)日：1997-07-08
申请号：US415287
申请日：1995-04-03
申请人： Theresa Maudie , David J. Monk
发明人： Theresa Maudie , David J. Monk
IPC分类号： G01L9/00 , H01L21/00
CPC分类号： G01L19/147
摘要： A pressure sensor (32) having a transducer (34) disposed on a top surface of an active die (38). The transducer has a doped region (42), the active die is disposed on a mounting substrate (70), and an interconnect opening (48) is disposed at an edge (90) of the active die. A metal layer (50) is disposed in the interconnect opening and on the top surface of the active die to be in electrical contact with the doped region. A conductive bump (76) is disposed on the mounting substrate in electrical contact with the metal layer and a conductive trace (74) on the mounting substrate.
摘要翻译：具有设置在有源管芯（38）的顶表面上的换能器（34）的压力传感器（32）。所述换能器具有掺杂区域（42），所述有源管芯设置在安装基板（70）上，并且互连开口（48）设置在所述有源管芯的边缘（90）处。金属层（50）设置在有源管芯的互连开口和顶表面上，以与掺杂区域电接触。导电凸块（76）设置在安装基板上，与金属层和安装基板上的导电迹线（74）电接触。

22. 发明授权

US5302534A Forming a vertical PNP transistor 失效
标题翻译：形成垂直PNP晶体管
公开(公告)号：US5302534A
公开(公告)日：1994-04-12
申请号：US844311
申请日：1992-03-02
申请人： David J. Monk , Robert H. Reuss , Jenny M. Ford
发明人： David J. Monk , Robert H. Reuss , Jenny M. Ford
IPC分类号： H01L21/331 , H01L21/8249 , H01L21/265 , H01L29/70
CPC分类号： H01L29/66272 , H01L21/8249 , Y10S148/011
摘要： A transistor (10) is formed by utilizing an isolated well (18) within a thin epitaxial layer (14). A base mask (22) that has a base opening (23) is applied to expose a portion of the isolated well (18). A low resistance collector enhancement (24) is formed within the well (18) by doping a portion of the well (18) through the base opening (23). A base region (26) is formed overlying the collector enhancement (24) by doping the well (18) through the base opening (23). Forming the collector enhancement (24) through the base opening (23), facilitates providing the collector enhancement (24) with a small area thereby minimizing the transistor's (10) parasitic collector capacitance value, collector resistance, and transit time.
摘要翻译：通过利用薄外延层（14）内的隔离阱（18）形成晶体管（10）。具有基部开口（23）的底座（22）被施加以暴露所述隔离井（18）的一部分。通过将井（18）的一部分通过基座开口（23）掺杂，在阱（18）内形成低电阻集电极增强（24）。通过将孔（18）掺杂穿过基座开口（23），形成覆盖集电极增强层（24）的基极区（26）。通过基极开口（23）形成集电极增强（24），有利于使集电极增强（24）具有小的面积，从而最小化晶体管（10）的寄生集电极电容值，集电极电阻和通过时间。

23. 发明申请

US20130250720A1 METHOD FOR ACQUIRING MARINE SEISMIC DATA 有权
标题翻译：获取海洋地震数据的方法
公开(公告)号：US20130250720A1
公开(公告)日：2013-09-26
申请号：US13429719
申请日：2012-03-26
申请人： David J. Monk , Michael S. Bahorich
发明人： David J. Monk , Michael S. Bahorich
IPC分类号： G01V1/38 , G01V1/24 , G01V1/02
CPC分类号： G01V1/3861 , G01V1/005 , G01V1/3808 , G01V2210/1212 , G01V2210/127 , G01V2210/1293
摘要： A method for acquiring marine seismic data includes towing a seismic energy source in a body of water and towing a seismic sensor at a selected distance from the seismic energy source. The seismic energy source is actuated a plurality of positions, a distance between each of the plurality of actuations being randomly different than any other such distance. Seismic energy detected by the seismic sensor is substantially continuously recorded through a plurality of actuations of the at least one seismic energy source. The recording includes recording a geodetic position of the at least one seismic energy source and the at least one seismic sensor at each actuation.
摘要翻译：一种用于获取海洋地震数据的方法包括：在水体中牵引地震能量源，并将地震传感器从所述地震能量源选定的距离处牵引。地震能量源被激活多个位置，多个致动中的每一个之间的距离随机地不同于任何其它这样的距离。由地震传感器检测到的地震能量通过至少一个地震能源的多次致动基本上连续记录。记录包括在每次致动时记录至少一个地震能量源和至少一个地震传感器的测地位置。

24. 发明授权

US06913941B2 SOI polysilicon trench refill perimeter oxide anchor scheme 有权
标题翻译： SOI多晶硅沟槽填充周边氧化物锚定方案
公开(公告)号：US06913941B2
公开(公告)日：2005-07-05
申请号：US10238062
申请日：2002-09-09
申请人： Gary J. O'Brien , David J. Monk
发明人： Gary J. O'Brien , David J. Monk
IPC分类号： B81B3/00 , B81C1/00 , H01L21/00
CPC分类号： B81C1/00039 , B81B2203/0118 , B81B2203/0307 , B81B2203/033
摘要： A method for creating a MEMS structure is provided. In accordance with the method, a substrate (53) is provided having a sacrificial layer (55) disposed thereon and having a layer of silicon (57) disposed over the sacrificial layer. A first trench (59) is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region (61) enclosed by the first trench and a second region (63) exterior to the first trench. A first material (65) is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench (71) is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.
摘要翻译：提供了一种用于产生MEMS结构的方法。根据该方法，提供了具有设置在其上的牺牲层（55）并且具有设置在牺牲层上方的硅层（57）的衬底（53）。产生第一沟槽（59），其延伸穿过二氧化硅层和牺牲层，并且将牺牲层分离成由第一沟槽包围的第一区域（61）和第一沟槽外部的第二区域（63）。第一材料（65）沉积到第一沟槽中，使得第一材料将第一沟槽填充到至少等于牺牲层厚度的深度。在第一沟槽的外部产生第二沟槽（71），其延伸穿过至少硅层并暴露牺牲层的第二区域的至少一部分。牺牲层的第二区域通过第二沟槽与适于蚀刻牺牲层的化学蚀刻溶液接触，所述蚀刻溶液对第一材料是选择性的。

25. 发明授权

US06352874B1 Method of manufacturing a sensor 有权
标题翻译：制造传感器的方法
公开(公告)号：US06352874B1
公开(公告)日：2002-03-05
申请号：US09317734
申请日：1999-05-24
申请人： Andrew C. McNeil , David J. Monk , Bishnu P. Gogoi
发明人： Andrew C. McNeil , David J. Monk , Bishnu P. Gogoi
IPC分类号： H01L2128
CPC分类号： G01L9/0042 , G01L9/0073
摘要： A method of manufacturing a sensor includes forming a first electrode (120, 1120), forming a sacrificial layer (520) over the first electrode, and forming a layer (130) over the sacrificial layer where a second electrode (131, 831) is located in the layer. The method further includes removing the sacrificial layer after forming the layer to form a cavity (140) between the first and second electrodes and then sealing the cavity between the first and second electrodes. The layer is supported over the first electrode by a post (133, 833) in the cavity, and the second electrode is movable relative to the first electrode and is movable in response to a pressure external to the cavity.
摘要翻译：制造传感器的方法包括：形成第一电极（120,1120），在第一电极上形成牺牲层（520），以及在牺牲层上形成层（130），其中第二电极（131,831）为位于层。所述方法还包括在形成所述层之后去除所述牺牲层以在所述第一和第二电极之间形成空腔（140），然后在所述第一和第二电极之间密封空腔。该层通过腔中的柱（133,833）支撑在第一电极上，并且第二电极可相对于第一电极移动，并且可响应于空腔外部的压力而移动。

26. 发明授权

US5600071A Vertically integrated sensor structure and method 失效
标题翻译：垂直集成的传感器结构和方法
公开(公告)号：US5600071A
公开(公告)日：1997-02-04
申请号：US684723
申请日：1996-07-22
申请人： K. Sooriakumar , David J. Monk , Wendy K. Chan , Kenneth G. Goldman
发明人： K. Sooriakumar , David J. Monk , Wendy K. Chan , Kenneth G. Goldman
IPC分类号： G01L9/04 , G01L9/00 , G01L19/06 , H01L29/84 , G01L9/06
CPC分类号： G01L19/148 , G01L19/0084 , G01L19/0627 , G01L19/143 , G01L19/147 , G01L9/0055 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L24/45 , H01L2924/01322 , H01L2924/12042 , H01L2924/1305 , H01L2924/13062 , H01L2924/14
摘要： A vertically integrated sensor structure (60) includes a base substrate (71) and a cap substrate (72) bonded to the base substrate (71). The base substrate (71) includes a transducer (78) for sensing an environmental condition. The cap substrate (72) includes electronic devices (92) formed on one surface to process output signals from the transducer (78). The sensor structure (60) provides an integrated structure that isolates sensitive components from harsh environments.
摘要翻译：垂直集成的传感器结构（60）包括基底（71）和接合到基底（71）的帽基底（72）。基底（71）包括用于感测环境条件的换能器（78）。盖基板（72）包括形成在一个表面上以处理来自换能器（78）的输出信号的电子设备（92）。传感器结构（60）提供了将敏感部件与恶劣环境隔离的集成结构。

27. 发明授权

US5394007A Isolated well and method of making 失效
标题翻译：隔离井和制作方法
公开(公告)号：US5394007A
公开(公告)日：1995-02-28
申请号：US119636
申请日：1993-09-13
申请人： Robert H. Reuss , David J. Monk , Christopher P. Dragon
发明人： Robert H. Reuss , David J. Monk , Christopher P. Dragon
IPC分类号： H01L21/761 , H01L21/8249 , H01L27/06 , H01L27/02 , H01L27/04
CPC分类号： H01L21/8249 , H01L21/761 , H01L27/0623
摘要： A junction isolated P-well is formed for high performance BiCMOS. Two dopants of opposite conductivity types are implanted and co-diffused inside an annular N-type region to form a narrow N-type buried layer positioned between two P-type regions. N-type buried layer is formed having P-type doped regions above and below the N-type buried layer so that the N-type buried layer is narrow. The P-type region above the N-type buried layer provides for a retrograde profile of the P-well formed above it. Besides the P-well isolation, the P-type region below the N-type buried layer acts as a ground plane which collects noise, which helps to prevent it from being coupled to other devices of the BiCMOS circuit.
摘要翻译：形成了用于高性能BiCMOS的结隔离P阱。相反导电类型的两种掺杂剂被注入并共扩散在环形N型区域内以形成位于两个P型区域之间的窄N型掩埋层。 N型掩埋层在N型掩埋层的上方和下方形成有P型掺杂区域，使得N型掩埋层窄。 N型掩埋层上方的P型区域提供了形成在其上的P阱的逆行剖面。除了P阱隔离之外，N型掩埋层以下的P型区域用作收集噪声的接地平面，这有助于防止其耦合到BiCMOS电路的其他器件。

28. 发明授权

US5309360A Method for attenuating undesirable data, such as multiples, using constrained cross-equalization 失效
标题翻译：使用约束交叉均衡来衰减不期望数据（如倍数）的方法
公开(公告)号：US5309360A
公开(公告)日：1994-05-03
申请号：US704363
申请日：1991-05-23
申请人： David J. Monk , Cameron B. Wason
发明人： David J. Monk , Cameron B. Wason
IPC分类号： G01V1/36 , G06F15/21
CPC分类号： G01V1/364 , G01V2210/56
摘要： To eliminate undesirable energy recorded during seismic surveying, a trace that models the undesirable energy on the recorded data trace is prepared. The model trace is first estimated using a suitable technique, such as wavefield extrapolation. Then, the model trace is modified using a best estimate of the amplitude, phase and time delay differences between the model trace and the data trace. The estimated amplitude, phase and time delay differences may be used to design a cross-equalization filter, which is used to cross-equalize the model trace with the data trace. Alternatively, the best estimate determination may include using a weighted sum of the model trace, its imaginary component, and their derivatives. When weighted and summed together, these components form a cross-equalized model trace that closely approximates the undesirable energy on the recorded data trace. Lastly, the cross-equalized model trace is subtracted from the data trace to substantially eliminate the undesirable energy.
摘要翻译：为了消除地震测量期间记录的不良能量，准备了对记录的数据轨迹上的不需要的能量进行建模的轨迹。首先使用合适的技术估计模型轨迹，例如波场外推法。然后，使用模型轨迹和数据轨迹之间的幅度，相位和时间延迟差异的最佳估计来修改模型轨迹。估计的幅度，相位和时间延迟差异可用于设计交叉均衡滤波器，用于将模型轨迹与数据跟踪进行交叉均衡。或者，最佳估计确定可以包括使用模型轨迹，其虚部和其导数的加权和。当加权和相加在一起时，这些组件形成了一个十分均衡的模型轨迹，其近似于记录的数据轨迹上的不期望的能量。最后，从数据跟踪中减去交叉均衡的模型轨迹，以基本上消除不需要的能量。

29. 发明授权

US08663973B2 Controlled alteration of pores using fluid flow and fabrication of articles thereby 有权
标题翻译：使用流体流动控制孔隙的改变，从而制造制品
公开(公告)号：US08663973B2
公开(公告)日：2014-03-04
申请号：US11658515
申请日：2005-07-26
申请人： David J. Monk , David R. Walt
发明人： David J. Monk , David R. Walt
IPC分类号： B05D1/36 , B05D5/12 , B05D7/22
CPC分类号： G01N33/5438 , B01J2219/00439 , B01J2219/0045 , B01J2219/00524 , B01J2219/00653 , Y10T428/13
摘要： The invention relates to microscopic structures and methods of making and using the structures. A method of forming a microscopic structure of a material includes obtaining a solution (310) containing the material, establishing a flowing stream of the solution (310) in a capillary (104), wherein the capillary (104) has an inner dimension that is smaller than about 300 micrometers, and maintaining the stream until a layer is built up along an inner wall of the capillary (104) from material deposited from the flowing stream, thereby forming a microscopic structure.
摘要翻译：本发明涉及微观结构及其制造和使用方法。形成材料的微观结构的方法包括获得含有该材料的溶液（310），在毛细管（104）中形成溶液（310）的流动流，其中毛细管（104）的内部尺寸为小于约300微米，并且保持流，直到沿着毛细管（104）的内壁从流动物料沉积的材料构建层，从而形成微观结构。

30. 发明申请

US20100242603A1 VERTICALLY INTEGRATED MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING 有权
标题翻译：垂直集成MEMS传感器器件，具有多次感测
公开(公告)号：US20100242603A1
公开(公告)日：2010-09-30
申请号：US12609332
申请日：2009-10-30
申请人： Todd F. Miller , Yizhen Lin , David J. Monk , Woo Tae Park
发明人： Todd F. Miller , Yizhen Lin , David J. Monk , Woo Tae Park
IPC分类号： G01P15/125 , H05K3/36
CPC分类号： G01P15/125 , B81B7/02 , G01P15/0802 , G01P15/18 , G01P2015/0814 , G01P2015/082 , G01P2015/0831 , Y10T29/49126
摘要： A microelectromechanical systems (MEMS) sensor device (184) includes a sensor portion (180) and a sensor portion (182) that are coupled together to form a vertically integrated configuration having a hermetically sealed chamber (270). The sensor portions (180, 182) can be formed utilizing different micromachining techniques, and are subsequently coupled utilizing a wafer bonding technique to form the sensor device (184). The sensor portion (180) includes one or more sensors (186, 188), and the sensor portion (182) includes one or more sensors (236, 238). The sensors (186, 188) are located inside the chamber (270) facing the sensors (236, 238) also located inside the chamber (270). The sensors (186, 188, 236, 238) are configured to sense different physical stimuli, such as motion, pressure, and magnetic field.
摘要翻译：微机电系统（MEMS）传感器装置（184）包括耦合在一起的传感器部分（180）和传感器部分（182），以形成具有气密密封室（270）的垂直一体化构造。传感器部分（180,182）可以利用不同的微加工技术形成，并且随后利用晶片接合技术来耦合以形成传感器装置（184）。传感器部分（180）包括一个或多个传感器（186,188），并且传感器部分（182）包括一个或多个传感器（236,238）。传感器（186,188）位于腔室（270）的面向也位于腔室（270）内的传感器（236,238）的内部。传感器（186,188,236,238）被配置为感测不同的物理刺激，例如运动，压力和磁场。

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