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21. 发明申请

US20070109040A1 Stacked CMOS current mirror using MOSFETs having different threshold voltages 审中-公开
标题翻译：使用具有不同阈值电压的MOSFET的叠层CMOS电流镜
公开(公告)号：US20070109040A1
公开(公告)日：2007-05-17
申请号：US11652071
申请日：2007-01-11
申请人： Jeong-wook Koh , Chun-deok Suh
发明人： Jeong-wook Koh , Chun-deok Suh
IPC分类号： G05F1/10
CPC分类号： G05F3/262
摘要： A stacked CMOS current mirror using metal oxide semiconductor field effect transistors (MOSFETs) having different threshold voltages is disclosed. The stacked CMOS current mirror includes a first MOSFET having a drain and a gate which are connected to an input current terminal, a second MOSFET having a drain connected to a source of the first MOSFET, a gate connected to the drain and the gate of the first MOSFET, and a source connected to ground, a third MOSFET having a drain connected to an output current terminal and a gate connected to the drain and the gate of the first MOSFET and the gate of the second MOSFET, and a fourth MOSFET having a drain connected to a source of the third MOSFET, a gate connected to the drain and the gate of the first MOSFET, the gate of the second MOSFET and the gate of the third MOSFET, and a source connected to the ground.
摘要翻译：公开了使用具有不同阈值电压的金属氧化物半导体场效应晶体管（MOSFET）的叠层CMOS电流镜。堆叠的CMOS电流镜包括具有连接到输入电流端子的漏极和栅极的第一MOSFET，具有连接到第一MOSFET的源极的漏极的第二MOSFET，连接到第一MOSFET的漏极和栅极的栅极第一MOSFET和连接到地的源极，具有连接到输出电流端子的漏极和连接到第一MOSFET的漏极和栅极以及第二MOSFET的栅极的栅极的第三MOSFET和具有第二MOSFET的第四MOSFET，漏极连接到第三MOSFET的源极，连接到第一MOSFET的漏极和栅极的栅极，第二MOSFET的栅极和第三MOSFET的栅极以及连接到地的源极。

22. 发明授权

US06865067B2 Structure of radio frequency variable capacitor and method of manufacturing the same 失效
标题翻译：射频可变电容器的结构及其制造方法
公开(公告)号：US06865067B2
公开(公告)日：2005-03-08
申请号：US10701553
申请日：2003-11-06
申请人： Sang-yoon Jeon , Chun-deok Suh
发明人： Sang-yoon Jeon , Chun-deok Suh
IPC分类号： H01L29/92 , H01L27/08 , H01G4/38
CPC分类号： H01L27/0808
摘要： In a structure of a radio frequency (RF) variable capacitor having a variable range of capacitance between a first minimum value and a first maximum value, and a method of manufacturing the structure, the structure includes a first capacitor, which has a variable range of capacitance between a second minimum value greater than the first minimum value and a second maximum value greater than the first maximum value, and a second capacitor, which is connected in series to the first capacitor and has a capacitance of a fixed value. By the structure and method, a quality factor of a radio frequency (RF) variable capacitor may be increased without adding complex processing steps.
摘要翻译：在具有第一最小值和第一最大值之间的可变电容范围的射频（RF）可变电容器的结构以及制造该结构的方法中，该结构包括第一电容器，该第一电容器具有可变范围大于第一最小值的第二最小值和大于第一最大值的第二最大值之间的电容;以及与第一电容器串联连接并具有固定值的电容的第二电容器。通过该结构和方法，可以增加射频（RF）可变电容器的品质因数而不增加复杂的处理步骤。

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