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21. 发明授权

US07679137B2 Method for fabricating recessed gate MOS transistor device 有权
标题翻译：凹陷栅极MOS晶体管器件的制造方法
公开(公告)号：US07679137B2
公开(公告)日：2010-03-16
申请号：US11696163
申请日：2007-04-03
申请人： Pei-Ing Lee , Chien-Li Cheng , Shian-Jyh Lin
发明人： Pei-Ing Lee , Chien-Li Cheng , Shian-Jyh Lin
IPC分类号： H01L29/76 , H01L31/062
CPC分类号： H01L27/10861 , H01L27/0629 , H01L27/10876
摘要： A method of fabricating self-aligned gate trench utilizing TTO poly spacer is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad nitride layer is provided. A plurality of trench capacitors are embedded in a memory array region of the semiconductor substrate. Each of the trench capacitors has a trench top oxide (TTO) that extrudes from a main surface of the semiconductor substrate. Poly spacers are formed on two opposite sides of the extruding TTO and are used, after oxidized, as an etching hard mask for etching a recessed gate trench in close proximity to the trench capacitor.
摘要翻译：公开了一种使用TTO多隔离件制造自对准栅极沟槽的方法。提供其上具有衬垫氧化物层和衬垫氮化物层的半导体衬底。多个沟槽电容器嵌入在半导体衬底的存储器阵列区域中。每个沟槽电容器具有从半导体衬底的主表面挤出的沟槽顶部氧化物（TTO）。聚合物间隔物形成在挤出TTO的两个相对侧上，并且在氧化后用作蚀刻硬掩模，用于蚀刻紧邻沟槽电容器的凹陷栅极沟槽。

22. 发明申请

US20100033057A1 ULTRASONIC LINEAR MOTOR 有权
标题翻译：超声波线性电动机
公开(公告)号：US20100033057A1
公开(公告)日：2010-02-11
申请号：US12276493
申请日：2008-11-24
申请人： Yi-Cheng Chen , Yu-Jen Wang , Chien Li , Chien-Shien Yeh
发明人： Yi-Cheng Chen , Yu-Jen Wang , Chien Li , Chien-Shien Yeh
IPC分类号： H02N2/04
CPC分类号： H02N2/026 , H02N2/002 , H02N2/0055
摘要： An ultrasonic linear motor includes a substrate; a vibrator disposed on the substrate having an oblique or curved face at two sides thereof forming concave receiving portions with the surfaces of the substrate; and a slider having clamping portions at two sides thereof for correspondingly clamping to the receiving portions, wherein the vibrator is for generating a driving force to the slider while connecting with a power supply, such that the clamping portions of the slider move within the receiving portions, thereby generating a linear translation. The present invention adopts a simple structure having few elements that enables easy manufacturing and integration with other elements, thus reducing manufacturing cost.
摘要翻译：超声波线性电动机包括：基板; 设置在所述基板上的振动器，其两侧具有倾斜或弯曲面，形成具有所述基板的表面的凹形接收部分; 以及滑块，其具有在其两侧的夹持部分，用于相应地夹紧到所述接收部分，其中所述振动器用于在与电源连接的同时产生对滑块的驱动力，使得滑块的夹紧部分在接收部分内移动，从而生成线性平移。本发明采用具有很少元件的简单结构，能够容易地制造和与其它元件集成，从而降低制造成本。

23. 发明授权

US07656663B2 Latch mechanism 失效
标题翻译：锁定机制
公开(公告)号：US07656663B2
公开(公告)日：2010-02-02
申请号：US11309797
申请日：2006-09-28
申请人： Peng Zhao , Chun-Chi Liang , Chien-Li Tsai , Ke-Cheng Lin , Hsuan-Chen Chen
发明人： Peng Zhao , Chun-Chi Liang , Chien-Li Tsai , Ke-Cheng Lin , Hsuan-Chen Chen
IPC分类号： H05K7/12
CPC分类号： G06F1/1679 , G06F1/1616 , Y10T292/0848
摘要： A latch mechanism includes a latching member, a button, and an elastic member for restoring the latching member. The latching member is rotatably installed in a cover unit. The latching member includes a latching portion for engaging with a base unit. The button is movably fixed to the cover unit. The button includes a slanted pushing portion for driving the latching member to rotate for disengaging the latching portion from the base unit.
摘要翻译：闩锁机构包括闩锁构件，按钮和用于恢复闩锁构件的弹性构件。闩锁构件可旋转地安装在盖单元中。闩锁构件包括用于与基座单元接合的闩锁部分。按钮可移动地固定到盖单元。按钮包括用于驱动闩锁构件旋转的倾斜推动部分，用于使闩锁部分与基部单元脱离接合。

24. 发明授权

US07588991B2 Method for fabricating embedded static random access memory 有权
标题翻译：嵌入式静态随机存取存储器的制作方法
公开(公告)号：US07588991B2
公开(公告)日：2009-09-15
申请号：US11779880
申请日：2007-07-18
申请人： Tung-Hsing Lee , Chien-Li Kuo , Yun-San Huang , Chih-Ming Su , Buo-Chin Hsu
发明人： Tung-Hsing Lee , Chien-Li Kuo , Yun-San Huang , Chih-Ming Su , Buo-Chin Hsu
IPC分类号： H01L21/331
CPC分类号： H01L27/1104 , H01L27/105 , H01L27/1116
摘要： The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the semiconductor substrate and defining at least a first conductive device area and at least a second conductive device area in the logic area and the memory cell area respectively; forming a patterned mask on the memory cell area and on the second conductive device area in the logic area and exposing the first conductive device area in the logic area; performing a first conductive ion implantation process on the exposed first conductive device area in the logic area; and removing the patterned mask.
摘要翻译：本发明提供了一种制造嵌入式静态随机存取存储器的方法，包括提供半导体衬底; 在所述半导体衬底上限定逻辑区域和存储单元区域，并分别在所述逻辑区域和所述存储器单元区域中至少限定第一导电器件区域和至少第二导电器件区域; 在所述存储单元区域和所述逻辑区域中的所述第二导电器件区域上形成图案化掩模，并且暴露所述逻辑区域中的所述第一导电器件区域; 在所述逻辑区域中暴露的第一导电器件区域上执行第一导电离子注入工艺; 并去除图案化掩模。

25. 发明授权

US07571874B2 Wire winding device with spring loaded retractable wire reel 失效
标题翻译：绕线装置带有弹簧加载的可伸缩线卷盘
公开(公告)号：US07571874B2
公开(公告)日：2009-08-11
申请号：US11309544
申请日：2006-08-18
申请人： Jun Zhang , Zheng Shi , Chien-Li Tsai , Chun-Chi Liang
发明人： Jun Zhang , Zheng Shi , Chien-Li Tsai , Chun-Chi Liang
IPC分类号： B65H75/30 , B65H75/48
CPC分类号： B65H75/48 , B65H75/4434
摘要： A wire winding device includes a case, a reel received in the case for winding a wire thereon, a restricting member for restricting/releasing the reel, and a resilient member for interconnecting the case and the reel and rotating the reel and being movable with reel in an axis direction of the reel when the reel starts to rotate.
摘要翻译：线缠绕装置包括壳体，容纳在用于缠绕线材的壳体中的卷轴，用于限制/释放卷轴的限制构件以及用于将壳体和卷轴互连并使卷轴旋转并且可与卷轴一起移动的弹性构件当卷轴开始旋转时，在卷轴的轴线方向上。

26. 发明授权

US07563686B2 Method for forming a memory device with a recessed gate 有权
标题翻译：用于形成具有凹入栅极的存储器件的方法
公开(公告)号：US07563686B2
公开(公告)日：2009-07-21
申请号：US11140889
申请日：2005-05-31
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/20
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/1087 , H01L27/10876
摘要： A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor device is formed in each trench. The pad layer is recessed until upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions of the deep trench capacitor devices. The pad layer and the substrate are etched using the spacers and the deep trench capacitor devices as a mask to form a recess, and a recessed gate is formed in the recess.
摘要翻译：公开了一种用于形成具有凹入栅极的存储器件的方法。提供其上具有垫层的衬底。图案化衬垫层和衬底以形成至少两个沟槽。在每个沟槽中形成深沟槽电容器器件。衬垫层凹进直到深沟槽电容器器件的上部露出。间隔件形成在深沟槽电容器器件的上部的侧壁上。使用间隔物和深沟槽电容器器件作为掩模来蚀刻焊盘层和衬底以形成凹部，并且在凹部中形成凹入栅极。

27. 发明申请

US20090166485A1 Slide mounting bracket structure 有权
标题翻译：滑动安装支架结构
公开(公告)号：US20090166485A1
公开(公告)日：2009-07-02
申请号：US12005292
申请日：2007-12-27
申请人： Ken-Ching Chen , Chien-Li Huang , Chun-Chiang Wang
发明人： Ken-Ching Chen , Chien-Li Huang , Chun-Chiang Wang
IPC分类号： A47B96/07 , F16M11/00
CPC分类号： A47B88/43
摘要： A slide mounting bracket structure includes a main bracket, an auxiliary bracket, a first engaging member, a second engaging member, an actuating element, a linking member and an elastic element. The main bracket is provided with the actuating element and the linking member at its inner side, and the auxiliary bracket is provided with the first engaging member and the second engaging member at its outer side. The actuating element corresponds to the first engaging member. The linking member has a part penetrating the main bracket, and has a support stand corresponding to the second engaging member, which further drags the auxiliary bracket to engage in sliding, and brings a second folded plate to depart from a first folded plate.
摘要翻译：滑动安装支架结构包括主支架，辅助支架，第一接合构件，第二接合构件，致动元件，连接构件和弹性元件。主支架在其内侧设置有致动元件和连接构件，辅助支架在其外侧设置有第一接合构件和第二接合构件。致动元件对应于第一接合件。连接构件具有穿过主支架的部分，并且具有与第二接合构件相对应的支撑架，其进一步拖动辅助支架以滑动，并且使第二折叠板离开第一折叠板。

28. 发明申请

US20090096340A1 Locating structure for a slide assembly 有权
标题翻译：滑动组件的定位结构
公开(公告)号：US20090096340A1
公开(公告)日：2009-04-16
申请号：US11907413
申请日：2007-10-12
申请人： Ken-Ching Chen , Chien-Li Huang , Wei-Sheng Wang , Chun-Chiang Wang
发明人： Ken-Ching Chen , Chien-Li Huang , Wei-Sheng Wang , Chun-Chiang Wang
IPC分类号： A47B88/04 , A47B88/16
CPC分类号： A47B88/57 , A47B88/493
摘要： A locating structure for a slide assembly includes a first track, a second track, a releasing member, and a locating member; a locating tab is provided at a front end of the first track; the second track is inserted and connected onto the first track to slide thereon; the second track is provided with a locating portion; the releasing member is mounted to an inner side of the second track; one end of the releasing member is provided with an operation button; the locating member is located on one side of the operation button and has a propped portion and a plunged portion; the locating member provides resilience for the propped portion to hold against the locating portion of the second track; and the locating member drives the propped portion to disengage from the locating portion by means of the plunged portion.
摘要翻译：滑动组件的定位结构包括第一轨道，第二轨道，释放构件和定位构件; 在第一轨道的前端设有定位翼片，将第二轨道插入并连接到第一轨道上以在其上滑动; 第二轨道设置有定位部分; 释放构件安装到第二轨道的内侧; 释放构件的一端设置有操作按钮; 定位构件位于操作按钮的一侧，并具有支撑部分和突出部分; 定位构件为支撑部分提供弹性以抵靠第二轨道的定位部分; 并且定位构件通过突出部分驱动支撑部分与定位部分脱离接合。

29. 发明授权

US07499294B2 Self-excitation synchronous rectification driver 有权
标题翻译：自励同步整流驱动器
公开(公告)号：US07499294B2
公开(公告)日：2009-03-03
申请号：US11705135
申请日：2007-02-12
申请人： Kuo-Fan Lin , Chien-Li Tsai
发明人： Kuo-Fan Lin , Chien-Li Tsai
IPC分类号： H02M3/335
CPC分类号： H02M3/33592 , Y02B70/1475
摘要： The present invention discloses a self-excitation synchronous rectification driver, which comprises a self-excitation coil, a self-excitation driver, a synchronous-signal source, a pulse transformer, a positive/negative edge detector, and a latch unit. The synchronous-signal source generates a synchronous signal to attain an external synchronous function. When the frequency is abnormal, the first and second rectifier switches of the rectification unit of the power supply are forced to turn on or turn off. Thereby, the first and second rectifier switches can turn on alternately, and the first and second rectifier switches are limited to within the highest and lowest working frequencies during the zero-load stage or the shutdown stage. Thus, the frequency of the synchronous rectification driver is under control, and abnormal voltage will not occur.
摘要翻译：本发明公开了一种自激同步整流驱动器，其包括自励线圈，自激驱动器，同步信号源，脉冲变压器，正/负边沿检测器和锁存单元。同步信号源产生同步信号以获得外部同步功能。当频率异常时，电源整流单元的第一和第二整流开关被迫导通或关断。由此，第一和第二整流开关交替地导通，并且第一和第二整流开关在零负载阶段或关断阶段被限制在最高和最低工作频率内。因此，同步整流驱动器的频率受到控制，不会发生异常电压。

30. 发明申请

US20090014768A1 DEEP TRENCH DEVICE WITH SINGLE SIDED CONNECTING STRUCTURE AND FABRICATION METHOD THEREOF 有权
标题翻译：具有单面连接结构的深度加固装置及其制造方法
公开(公告)号：US20090014768A1
公开(公告)日：2009-01-15
申请号：US11940547
申请日：2007-11-15
申请人： Shian-Jyh Lin , Chien-Li Cheng
发明人： Shian-Jyh Lin , Chien-Li Cheng
IPC分类号： H01L29/94 , H01L21/20
CPC分类号： H01L29/945 , H01L27/10823 , H01L27/10867 , H01L29/66181
摘要： A deep trench device with a single sided connecting structure. The device comprises a substrate having a trench therein. A buried trench capacitor is disposed in a lower portion of the trench. An asymmetric collar insulator is disposed on an upper portion of the sidewall of the trench. A connecting structure is disposed in the upper portion of the trench, comprising an epitaxial silicon layer disposed on and adjacent to a relatively low portion of the asymmetric collar insulator and a connecting member disposed between the epitaxial silicon layer and a relatively high portion of the asymmetric collar insulator. A conductive layer is disposed between the relatively high and low portions of the asymmetric collar insulator, to electrically connect the buried trench capacitor and the connecting structure. A cap layer is disposed on the connecting structure. A fabrication method for a deep trench device is also disclosed.
摘要翻译：具有单面连接结构的深沟槽装置。该装置包括其中具有沟槽的衬底。埋沟槽电容器设置在沟槽的下部。不对称环形绝缘体设置在沟槽的侧壁的上部。连接结构设置在沟槽的上部，包括设置在不对称环形绝缘体的相对较低部分上并与其相邻的外延硅层，以及设置在外延硅层和不对称的较高部分之间的连接构件项圈绝缘子。导电层设置在不对称环形绝缘体的相对较高和较低的部分之间，以电连接埋入沟槽电容器和连接结构。盖层设置在连接结构上。还公开了一种深沟槽器件的制造方法。

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