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    • 212. 发明授权
    • Wavelength conversion element
    • 波长转换元件
    • US07177070B2
    • 2007-02-13
    • US10522698
    • 2003-09-18
    • Sunao KurimuraMasaki Harada
    • Sunao KurimuraMasaki Harada
    • G02F1/35G02F1/365
    • G02F1/3544G02F2001/3509G02F2201/063
    • Two grooves 10 are diced in parallel along the light passage direction in a quartz quasi-phase matching element 1. Consequently, as is shown in (b) and (c), a protruding part 11 which is positioned between the two grooves 10 is formed on the upper surface side (in the figures), and a ridge type waveguide 9 is formed inside this protruding part. Accordingly, if light is caused to pass through this ridge type waveguide 9, the light can be caused to pass through the portions with inverted crystal axes (polarization inversion regions) 4, and can be subjected to a wavelength conversion, in a state in which the light is confined into the ridge type wavelength guide 9. As a result, a state can be produced in which the energy of the light is high inside the wavelength conversion region, so that a high wavelength conversion efficiency can be obtained.
    • 在石英准相位匹配元件1中沿着光通道方向平行切割两个凹槽10。 因此,如(b)和(c)所示,在上表面侧(图中)形成有位于两个槽10之间的突出部11,在该突出部 部分。 因此,如果使光通过该脊型波导9,则可以使光通过具有反转晶轴(极化反转区域)4的部分,并且可以在其中进行波长转换,其中 光被限制在脊型波长引导件9中。 结果,可以产生在波长转换区域内光的能量高的状态,从而可以获得高波长转换效率。
    • 215. 发明授权
    • Optical device
    • 光学装置
    • US07095926B2
    • 2006-08-22
    • US11002114
    • 2004-12-03
    • Masaki Sugiyama
    • Masaki Sugiyama
    • G02B6/42
    • G02F1/2255G02F2001/212G02F2201/063G02F2201/12G02F2203/21
    • An object of the present invention is to provide an optical device, in which a stress applying on ridge sections caused by the difference of thermal expansion between a metal film of which a ground electrode is formed and a substrate is reduced. In order to achieve this, in the optical device of the present invention, the ratio of the volume of a ground electrode portion formed at the position of other groove to the area of opening part of the other groove is smaller than the ratio of the volume to the area of a ground electrode portion formed at the position except the other groove.
    • 本发明的目的是提供一种光学装置,其中由形成接地电极的金属膜与衬底之间的热膨胀差导致的对脊部施加的应力减小。 为了实现这一点,在本发明的光学装置中,形成在其他槽的位置处的接地电极部分的体积与另一个沟槽的开口部分的面积之比小于体积 到除了另一个沟槽之外的位置处形成的接地电极部分的区域。
    • 216. 发明申请
    • Semiconductor optical waveguide device
    • 半导体光波导器件
    • US20060110091A1
    • 2006-05-25
    • US10521227
    • 2003-07-08
    • Ian Day
    • Ian Day
    • G02F1/295G02B6/10G02B6/26
    • G02F1/025G02F2201/063G02F2202/105
    • A semiconductor optical wave guide device (1) comprising a semiconductor layer (3) having an upper surface (5), and a lower surface (7) which is defined by a lower confinement layer(9), the semiconduct or layer having formed therein: (a) a wave guide (13); (b) at least one recess (19) adjacent to the waveguide (13)and extending from the upper surface (5)of the semiconductor layer (3); (c) at least one doped region (21, 23), at least part of which is situated between a said recess (19) and the lower confinement layer (9); and (d) at least one trench (25) adjacent to a said doped region (21, 23) and recess (19) and situated on an opposite side thereof to the waveguide, wherein the (or each) trench (25) extends from the upper surface of the semiconductor layer (3).
    • 一种包括具有上表面(5)的半导体层(3)和由下约束层(9)限定的下表面(7)的半导体光波导装置(1),其中形成有半导体层 :(a)波导(13); (b)邻近波导(13)并从半导体层(3)的上表面(5)延伸的至少一个凹槽(19); (c)至少一个掺杂区域(21,23),其至少一部分位于所述凹部(19)和下限制层(9)之间; 和(d)与所述掺杂区域(21,23)和凹部(19)相邻并且位于与波导的相对侧上的至少一个沟槽(25),其中(或每个)沟槽(25)从 半导体层(3)的上表面。