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    • 192. 发明申请
    • SEMICONDUCTOR OPTICAL MODULATOR AND SEMICONDUCTOR MACH-ZEHNDER OPTICAL MODULATOR
    • 半导体光学调制器和半导体光栅调制器
    • US20120183249A1
    • 2012-07-19
    • US13321903
    • 2010-05-12
    • Kenji SatoTomoaki Kato
    • Kenji SatoTomoaki Kato
    • G02F1/035
    • G02F1/025G02F1/2257G02F2201/063G02F2202/06
    • Provided are a semiconductor optical modulator and a semiconductor Mach-Zehnder optical modulator of high efficiency and high reliability.The semiconductor optical modulator 10 of the present invention includes a substrate 11; a first n-type cladding layer 12; a semiconductor optical modulation layer 13; a p-type cladding layer 14; a second n-type cladding layer 15; a passivation film 19; and an electric field-relaxing layer 16, wherein the first n-type cladding layer 12, the semiconductor optical modulation layer 13, the p-type cladding layer 14, and the second n-type cladding layer 15 are laminated on the substrate 11 in this order to form a waveguide structure, the passivation film 19 is arranged at the side surfaces of the waveguide structure, the electric field-relaxing layer 16 is interposed between the p-type cladding layer 14 and the second n-type cladding layer 15, and an impurity concentration of the electric field-relaxing layer 16 is lower than that of the p-type cladding layer 14 and that of the second n-type cladding layer 15
    • 提供了高效率和高可靠性的半导体光调制器和半导体马赫 - 曾德尔光学调制器。 本发明的半导体光调制器10包括:基板11; 第一n型包覆层12; 半导体光调制层13; p型覆层14; 第二n型包覆层15; 钝化膜19; 以及电场缓和层16,其中第一n型包覆层12,半导体光调制层13,p型覆层14和第二n型包覆层15层叠在基板11上 为了形成波导结构,钝化膜19布置在波导结构的侧表面处,电场弛豫层16介于p型包覆层14和第二n型包覆层15之间, 并且电场弛豫层16的杂质浓度低于p型包覆层14的杂质浓度,第二n型包层15的杂质浓度
    • 195. 发明申请
    • ELECTRO-OPTIC DEVICE AND MACH-ZEHNDER OPTICAL MODULATOR HAVING THE SAME
    • 具有它的电光设备和MACH-ZEHNDER光学调制器
    • US20120063714A1
    • 2012-03-15
    • US13013012
    • 2011-01-25
    • Jeong Woo PARKGyungock KIM
    • Jeong Woo PARKGyungock KIM
    • G02F1/295
    • G02F1/025G02F1/2257G02F2201/063
    • Provided are an electro-optic device with a high modulation rate and a mach-zehnder optical modulator having the same. The electro-optic device includes a slap, a rip waveguide, a first impurity region, a second impurity region, and a third impurity region. The slap is disposed on a substrate. The rip waveguide includes a mesa extending in one direction on the slap and the slap disposed under the mesa. The first impurity region is disposed in the slap of one side of the mesa. The third impurity region is disposed in the slap of the other side of the mesa to oppose the first impurity region. The second impurity region is disposed in the rip waveguide between the first impurity region and the third impurity region.
    • 提供具有高调制率的电光装置和具有该电光装置的马赫 - 泽德光调制器。 电光装置包括拍打,裂口波导,第一杂质区,第二杂质区和第三杂质区。 拍击被设置在基板上。 裂口波导包括在拍击上沿一个方向延伸的台面和设置在台面下方的拍子。 第一杂质区设置在台面的一侧的一旁。 第三杂质区域设置在台面的另一侧的拍击中以与第一杂质区域相对。 第二杂质区设置在第一杂质区和第三杂质区之间的裂缝波导中。