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191. 发明申请

US20060289894A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060289894A1
公开(公告)日：2006-12-28
申请号：US11455631
申请日：2006-06-20
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译：半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，并由未掺杂的GaN和N型Al x Ga 1 -N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

192. 发明申请

US20060259210A1 In-vehicle input unit 有权
标题翻译：车载输入单元
公开(公告)号：US20060259210A1
公开(公告)日：2006-11-16
申请号：US11432530
申请日：2006-05-12
申请人： Tsuyoshi Tanaka , Yasushi Ishiai
发明人： Tsuyoshi Tanaka , Yasushi Ishiai
IPC分类号： G06F17/00
CPC分类号： B60K37/06 , B60K2350/928 , G02B27/01
摘要： An in-vehicle input unit is provided which includes: a head-up display which projects a hierarchical menu for operating a plurality of pieces of in-vehicle equipment onto a windshield in front of a driver's seat, and displays the hierarchical menu as a virtual image ahead of the windshield; and a plurality of switches which are disposed in a steering wheel so that several switches adjoin and surround one central switch, in which the head-up display displays selection items on the hierarchical menu as the virtual image so that this selection items correspond one to one to the plurality of switches disposed in the steering wheel.
摘要翻译：提供一种车载输入单元，其包括：平视显示器，其将用于操作多个车载设备的分层菜单投射到驾驶员座椅前方的挡风玻璃上，并将该分层菜单显示为虚拟挡风玻璃前方的图像; 以及多个开关，其设置在方向盘中，使得几个开关邻接并围绕一个中央开关，其中平视显示器将分层菜单上的选择项目显示为虚拟图像，使得该选择项目一一对应到设置在方向盘中的多个开关。

193. 发明申请

US20060124960A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060124960A1
公开(公告)日：2006-06-15
申请号：US11299818
申请日：2005-12-13
申请人： Yutaka Hirose , Tsuyoshi Tanaka
发明人： Yutaka Hirose , Tsuyoshi Tanaka
IPC分类号： H01L31/109
CPC分类号： H01L27/0605 , H01L21/84 , H01L27/1203 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group Ill-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.
摘要翻译：半导体器件包括n型硅的半导体衬底，在其上部包括彼此间隔开并掺杂有p型杂质的第一极性反转区域和第二极性反转区域。包括第一有源层的第一HFET和包括由III-V族氮化物半导体组成的第二有源层的第二HFET分别独立地形成在半导体衬底中的相应的极性反转区域上，并且HFET彼此电连接通过互连。

194. 发明申请

US20060063502A1 Oscillator circuit and semiconductor device having oscillator circuit 失效
公开(公告)号：US20060063502A1
公开(公告)日：2006-03-23
申请号：US11225451
申请日：2005-09-13
申请人： Akihisa Shibuya , Koji Tsukamoto , Yasuhide Shimizu , Tsuyoshi Tanaka
发明人： Akihisa Shibuya , Koji Tsukamoto , Yasuhide Shimizu , Tsuyoshi Tanaka
IPC分类号： H04B1/40 , H04B1/06
CPC分类号： H03L7/02
摘要： An oscillator circuit having a closed loop connection, including: an oscillator for generating an output signal oscillating at a frequency corresponding to a control signal; a frequency/voltage converter for generating a detection signal having a voltage corresponding to a frequency of the output signal; a difference detector for generating a difference signal indicating a difference between the detection signal and a reference signal; and an integrator for generating the control signal by integrating the difference signal.

195. 发明申请

US20050121816A1 Process for producing ceramic molding having three-dimensional network structure 失效
标题翻译：具有三维网状结构的陶瓷成形体的制造方法
公开(公告)号：US20050121816A1
公开(公告)日：2005-06-09
申请号：US10987301
申请日：2004-11-15
申请人： Kazuo Shibata , Tadashi Ohya , Tsuyoshi Tanaka
发明人： Kazuo Shibata , Tadashi Ohya , Tsuyoshi Tanaka
IPC分类号： C04B38/00 , C04B33/32 , C04B38/06
CPC分类号： C04B38/067 , C04B35/00 , C04B38/063 , C04B40/0028
摘要： A process for producing a ceramic molding having a three-dimensional network structure with a plurality of spherical cells and a plurality of through holes present in dividing walls between the spherical cells, includes: a step of obtaining an aggregate of coated particles in which a plurality of ceramic particles are attached to the surface of spherical synthetic resin particles; a step of arranging the aggregate of coated particles in closest packed form within a mold; a step of filling gaps in the aggregate of coated particles with a ceramic so as to give a shaped product; a step of releasing the shaped product from the mold; a step of thermally decomposing the spherical synthetic resin particles of the shaped product so as to form the spherical cells and form the plurality of through holes in dividing wall-forming sections that are present between adjacent spherical cells; and a step of sintering the ceramic particles and the ceramic so as to form the dividing walls.
摘要翻译：一种具有三维网状结构的陶瓷成型体的制造方法，具有多个球形电池和存在于球形电池之间的分隔壁上的多个通孔，包括：获得多个的陶瓷颗粒附着在球形合成树脂颗粒的表面上; 将模具中最接近填充形式的涂覆颗粒的集合体布置的步骤; 用陶瓷填充涂覆颗粒的聚集体中的间隙以产生成形产品的步骤; 从模具中释放成形产品的步骤; 将成形体的球形合成树脂颗粒热分解以形成球形单元并在存在于相邻球形单元之间的分隔壁形成部分中形成多个通孔的步骤; 以及烧结陶瓷颗粒和陶瓷以形成分隔壁的步骤。

196. 发明申请

US20050093098A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050093098A1
公开(公告)日：2005-05-05
申请号：US10971098
申请日：2004-10-25
申请人： Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
发明人： Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
IPC分类号： C30B25/02 , C30B29/40 , H01L21/285 , H01L29/20 , H01L29/45 , H01L29/80 , H01L33/32 , H01L33/40 , C30B1/00 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/36 , H01L31/0304
CPC分类号： H01L21/28575 , C30B25/02 , C30B29/40 , H01L29/2003 , H01L29/452 , H01L29/802 , H01L33/32 , H01L33/40
摘要： A semiconductor device of the present invention comprises a Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity and at least one ohmic electrode formed on the Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity. The ohmic electrode is formed of a conductive material containing a metal boride.
摘要翻译：本发明的半导体器件包括具有n型导电性的氮化镓等的III-V族氮化物半导体层和形成在氮化镓等的III-V族氮化物半导体层上的至少一个欧姆电极， n型电导率。欧姆电极由含有金属硼化物的导电材料形成。

197. 发明申请

US20050087763A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050087763A1
公开(公告)日：2005-04-28
申请号：US10970026
申请日：2004-10-22
申请人： Atsuhiko Kanda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Yutaka Hirose , Tomohiro Murata
发明人： Atsuhiko Kanda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Yutaka Hirose , Tomohiro Murata
IPC分类号： H01L21/331 , H01L21/335 , H01L21/338 , H01L27/146 , H01L29/20 , H01L29/737 , H01L29/778 , H01L29/812 , H01L31/0328 , H01S5/042 , H01S5/323 , H01S5/343
CPC分类号： H01L29/7787 , H01L27/14609 , H01L27/1463 , H01L27/14636 , H01L27/14656 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
摘要翻译：半导体器件具有第一氮化物半导体层，形成在第一氮化物半导体层上的第二氮化物半导体层，并具有在第一氮化物半导体层的上部产生二维电子气层的组成，电极，其选择性地形成在第二氮化物半导体层上。第二氮化物半导体层包括具有至少一个倾斜部分的接触区域，其底部或壁表面朝向第一氮化物半导体层的上表面倾斜并且限定凹陷的横截面构型。电极形成在接触区域上。

198. 发明授权

US06873167B2 Connection box, system, and method for evaluating a DUT board 失效
标题翻译：用于评估DUT板的连接盒，系统和方法
公开(公告)号：US06873167B2
公开(公告)日：2005-03-29
申请号：US10279519
申请日：2002-10-24
申请人： Akihiko Goto , Yuko Iwasaki , Tsuyoshi Tanaka , Koji Tokuno
发明人： Akihiko Goto , Yuko Iwasaki , Tsuyoshi Tanaka , Koji Tokuno
IPC分类号： G01R31/26 , G01R31/04 , G01R31/28 , H01R31/00 , H01R43/00 , G01R31/02
CPC分类号： H01R31/005 , G01R31/2851 , G01R31/2889 , H01R2201/20
摘要： An evaluation device and method for DUT boards and probe cards which increase the reproducibility of the measured values and decrease the abrasion of pads in evaluation tests. A connection box is provided with contact pins, mounting mechanisms used to mount the DUT boards, and a plurality of connectors which feed signals from the contact pins to the outside.
摘要翻译：一种用于DUT板和探针卡的评估装置和方法，其在评估测试中增加测量值的重现性并减少垫的磨损。连接盒设置有接触针，用于安装DUT板的安装机构，以及将接触针的信号馈送到外部的多个连接器。

199. 发明申请

US20050010667A1 System and method for resource accounting on computer network 审中-公开
标题翻译：计算机网络资源计费系统和方法
公开(公告)号：US20050010667A1
公开(公告)日：2005-01-13
申请号：US10751434
申请日：2004-01-06
申请人： Toshiomi Moriki , Keitaro Uehara , Yuji Tsushima , Tsuyoshi Tanaka
发明人： Toshiomi Moriki , Keitaro Uehara , Yuji Tsushima , Tsuyoshi Tanaka
IPC分类号： G06F11/34 , G06F1/00 , G06F9/50 , G06F15/173 , G06F21/22
CPC分类号： G06F11/3423 , G06F9/5011 , G06F11/3476 , G06F11/3495 , G06F2201/865 , G06F2201/875
摘要： A sever includes an SVP 206 which is a control device capable of executing processing independent of a CPU, and an interrupt 314 is periodically applied to the CPU. An SVP device driver 303, being triggered by the interrupt 314, acquires an amount of server resources used, such as CPU operating time and memory capacity, and user information used by using an API provided by an OS, and delivers such information to an SVP 206. The SVP 206 transmits resource information thus delivered to an accounting server via an NIC 211. The accounting server accounts an amount of server resource used on a user basis and bills the users according to the quantity of server resource used. With such arrangement, it is possible to accurately grasp the usage status of server resource regardless of server loading, and further, it is possible to execute accounting of server resources and billing based on such accounting regardless of types of OS or CPU.
摘要翻译：服务器包括SVP 206，其是能够独立于CPU执行处理的控制装置，并且中断314周期性地应用于CPU。由中断314触发的SVP设备驱动器303获取使用的服务器资源量，例如CPU操作时间和存储器容量，以及使用由OS提供的API使用的用户信息，并将这些信息传送到SVP 206. SVP 206经由NIC211发送这样传送给计费服务器的资源信息。计费服务器根据用户的用户数量来计算使用的服务器资源量，并根据所使用的服务器资源的数量向用户收费。通过这样的配置，无论服务器负载如何，都能够准确地掌握服务器资源的使用状态，而且，无论OS或CPU的种类如何，都可以基于这样的计费来执行对服务器资源的计费和计费。

200. 发明授权

US06832235B1 Multiple block adder using carry increment adder 有权
标题翻译：多个块加法器使用进位增量加法器
公开(公告)号：US06832235B1
公开(公告)日：2004-12-14
申请号：US09955138
申请日：2001-09-19
申请人： Shigetoshi Muramatsu , Tsuyoshi Tanaka , Akihiro Takegama
发明人： Shigetoshi Muramatsu , Tsuyoshi Tanaka , Akihiro Takegama
IPC分类号： G06F750
CPC分类号： G06F7/507 , G06F7/5055 , G06F7/508
摘要： A multiple block adder is provided wherein carry select adder (CSA) is used in the most significant bit (MSB) block, a carry increment adder (CIA) is used in the least significant bit block and a combination of carry increment adder (CIA) and carry lookahead adder (CLA) circuit is used in the middle block.
摘要翻译：提供了一种多块加法器，其中在最高有效位（MSB）块中使用进位选择加法器（CSA），在最低有效位块中使用进位增量加法器（CIA），进位递增加法器（CIA）并携带前置加法器（CLA）电路用于中间块。

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