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11. 发明申请

US20230046424A1 EUV GENERATOR, EUV LITHOGRAPHY APPARATUS INCLUDING THE SAME, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权
公开(公告)号：US20230046424A1
公开(公告)日：2023-02-16
申请号：US17691471
申请日：2022-03-10
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyeon Jin KIM , Sung Hyup KIM , Jeong-Gil KIM , Jeong Du KIM , Sang Hoon LEE , In Jae LEE , Jong Gu LEE
IPC分类号： H05G2/00 , G03F7/20 , H01L21/3065 , H01L21/027
摘要： An extreme ultraviolet light generator includes a collector including a first focus and a second focus, a droplet feeder configured to provide a source droplet toward the first focus of the collector, a laser generator configured to irradiate a laser toward the first focus of the collector, an airflow controller between the first focus and the second focus of the collector, the airflow controller having a ring shape, and the airflow controller including at least one slit, and a first part and a second part hinged to each other, and a control gas feeder configured to provide a control gas towards the at least one slit of the airflow controller.

12. 发明授权

US11576250B1 Semiconductor processing tool and methods of operation 有权
公开(公告)号：US11576250B1
公开(公告)日：2023-02-07
申请号：US17445430
申请日：2021-08-19
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Cheng-Hao Lai , Ming-Hsun Tsai , Hsin-Feng Chen , Wei-Shin Cheng , Yu-Kuang Sun , Cheng-Hsuan Wu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC分类号： H05G2/00 , G03F7/20
摘要： Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

13. 发明授权

US11573495B2 Control of dynamic gas lock flow inlets of an intermediate focus cap 有权
公开(公告)号：US11573495B2
公开(公告)日：2023-02-07
申请号：US17446226
申请日：2021-08-27
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Kai Chang , Yu Sheng Chiang , Yu De Liou , Chi Yang , Ching-Juinn Huang , Po-Chung Cheng
IPC分类号： G03F7/20 , H05G2/00
摘要： A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.

14. 发明申请

US20230030134A1 EXTREME ULTRAVIOLET CONTROL SYSTEM 有权
公开(公告)号：US20230030134A1
公开(公告)日：2023-02-02
申请号：US17963054
申请日：2022-10-10
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Jen-Yang CHUNG , Chieh HSIEH , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
IPC分类号： G03F7/20 , G03F1/24 , H05G2/00
摘要： A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

15. 发明授权

US11558037B2 High efficiency high voltage pulse generator 有权
公开(公告)号：US11558037B2
公开(公告)日：2023-01-17
申请号：US17199401
申请日：2021-03-11
申请人： Gary Hanington
发明人： Gary Hanington
IPC分类号： H03K3/012 , H05G1/20
摘要： A high voltage pulse generator is disclosed. The high voltage pulse generator comprises a pulse generating transformer having a primary coil with a first side and a second side, and a secondary coil with a first side and a second side. A direct current (DC) voltage source connection is at the first side of the primary coil. A first high frequency power driver transistor is coupled between the second side of the primary coil and a ground connection. The first high frequency power driver transistor is configured to operate in an on-mode for a selected time period to charge the primary coil for the selected time period based on a switching frequency of the first high frequency power driver transistor, and switch the first high frequency power driver transistor to an off-mode at the switching frequency to release the charge from the primary coil to the secondary coil. A diode is coupled between the first side of the secondary coil and a pulsed voltage output that is configured to be connected to a high voltage device. The diode configured to direct a flow of charge from the secondary coil to charge a capacitance of the high voltage device to a rising pulse leading edge of a voltage pulse.

16. 发明申请

US20230007763A1 EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD 有权
公开(公告)号：US20230007763A1
公开(公告)日：2023-01-05
申请号：US17835312
申请日：2022-06-08
申请人： Gigaphoton Inc.
发明人： Koutaro MIYASHITA
IPC分类号： H05G2/00 , G03F7/20
摘要： An extreme ultraviolet light generation apparatus includes a chamber in which a target is turned into plasma to generate extreme ultraviolet light, a target generator, an illumination device, and an imaging device receiving illumination light and capturing a target image. The imaging device includes a first transfer optical system transferring the target image, a mask having an opening formed at a transfer position of the first transfer optical system, a second transfer optical system transferring the target image at the opening, an image intensifier arranged such that a photoelectric surface is located at a transfer position of the second transfer optical system, a third transfer optical system transferring the target image at a fluorescent surface, an image sensor arranged at a transfer position of the third transfer optical system, and a moving mechanism capable of moving the mask by an amount equal to or larger than the opening.

17. 发明授权

US11545331B2 X-ray imaging apparatus 有权
公开(公告)号：US11545331B2
公开(公告)日：2023-01-03
申请号：US17223625
申请日：2021-04-06
申请人： Shimadzu Corporation
发明人： Ken Shirota , Haruo Uno
IPC分类号： H01J35/10 , H05G1/54 , H05G1/66
摘要： The X-ray imaging apparatus includes: a main power supply operation unit for switching ON/OFF of power supply to the X-ray imaging apparatus; a braking unit for decelerating a rotation speed of the anode to a predetermined braking speed lower than a resonance range which is a rotation speed of the anode at which resonance occurs in the X-ray tube; and a non-braking stop prediction unit configured to detect a predetermined situation in which a non-braking stop state is predicted, the non-braking stop state being a state in which the main power supply operation unit is operated to be turned to an OFF state without decelerating the rotating anode by the braking unit. The non-braking stop prediction unit activates the braking unit by detecting the predetermined situation to decrease the rotation speed of the anode to the braking speed.

18. 发明授权

US11540793B2 X-ray imaging system 有权
公开(公告)号：US11540793B2
公开(公告)日：2023-01-03
申请号：US17150180
申请日：2021-01-15
申请人： Shimadzu Corporation
发明人： Takayuki Mitsuhashi , Haruo Uno , Ken Shirota
IPC分类号： A61B6/00 , H01J35/10 , H05G1/30
摘要： Provided is an X-ray imaging system capable of performing X-ray imaging quickly. The X-ray imaging system is provided with: an X-ray tube device including a cathode and an anode, the X-ray tube device being capable of performing X-ray imaging by irradiating an imaging target with X-rays in a state of rotating the anode; a light irradiation device including a collimator defining an X-ray irradiation range of the X-rays with respect to the imaging target, a visible light irradiation unit for emitting visible light to the imaging target and a light irradiation operation unit for performing an operation for making the visible light irradiation unit in the light irradiation state; and a controller for controlling operations of the X-ray tube device and the light irradiation device. The controller rotates the anode at an imaging possible rotation speed capable of performing X-ray imaging when the light irradiation operation unit is operated.

19. 发明授权

US11537053B2 Semiconductor processing tool and methods of operation 有权
公开(公告)号：US11537053B2
公开(公告)日：2022-12-27
申请号：US17450100
申请日：2021-10-06
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chiao-Hua Cheng , Yu-Kuang Sun , Wei-Shin Cheng , Yu-Huan Chen , Ming-Hsun Tsai , Cheng-Hao Lai , Cheng-Hsuan Wu , Yu-Fa Lo , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen , Sheng-Kang Yu
IPC分类号： G03F7/20 , H05G2/00
摘要： Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.

20. 发明授权

US11531278B2 EUV lithography system and method for decreasing debris in EUV lithography system 有权
公开(公告)号：US11531278B2
公开(公告)日：2022-12-20
申请号：US17205397
申请日：2021-03-18
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chi Yang , Ssu-Yu Chen , Shang-Chieh Chien , Chieh Hsieh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
IPC分类号： G03F7/20 , H05G2/00
摘要： Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.

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