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11. 发明申请

US20150280402A1 Single-Step-Grown Transversely Coupled Distributed Feedback Laser 有权
标题翻译：单步生长横向耦合分布式反馈激光器
公开(公告)号：US20150280402A1
公开(公告)日：2015-10-01
申请号：US14182335
申请日：2014-02-18
申请人： Innolume GmbH
发明人： Alexey Gubenko , Daniil Livshits , Sergey Mikhrin , Igor Krestnikov
IPC分类号： H01S5/125 , H01S5/02 , H01S5/343
CPC分类号： H01S5/125 , H01S5/0202 , H01S5/026 , H01S5/06256 , H01S5/1085 , H01S5/12 , H01S5/1221 , H01S5/124 , H01S5/1246 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2215 , H01S5/3054 , H01S5/34313
摘要： A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer.A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.
摘要翻译：公开了一种横向耦合的分布反馈激光二极管，可以在不产生过度增长的情况下进行处理。激光器由外延异质结构制成，其包括位于两个覆层之间的芯层，覆盖层和至少一个富Al层。侧向波导通过富Al层的选择性氧化形成。表面波纹光栅形成在波导上方。异质外延结构被设计成使得芯层被放置在紧邻激光结构的顶部以提供光与光栅之间所需的重叠。为了避免不可接受的光损耗，在波导上方没有金属化。相反，金属触点偏移一定距离，使得电流必须在垂直注入芯层之前在盖层中扩展。

12. 发明授权

US09065250B2 Optical amplifier and optical amplifying method 有权
标题翻译：光放大器和光放大方法
公开(公告)号：US09065250B2
公开(公告)日：2015-06-23
申请号：US14209857
申请日：2014-03-13
申请人： Sony Corporation
发明人： Hiroshi Yoshida
IPC分类号： H01S5/10 , H01S5/323 , H01S5/50 , H01S3/23 , H01S5/065 , H01S5/14
CPC分类号： H01S5/1064 , H01S3/2308 , H01S5/0657 , H01S5/1003 , H01S5/1039 , H01S5/1085 , H01S5/14 , H01S5/32341 , H01S5/50
摘要： There is provided an optical amplifier including a diffusing unit configured to be driven by a first current density and to increase a beam diameter of an incident laser beam that passes through a first waveguide that guides the laser beam, and an amplifying unit configured to be driven by a second current density that is higher than the first current density and to amplify intensity of the laser beam that passes through a second waveguide that guides the laser beam whose beam diameter has been increased by the diffusing unit. The first waveguide of the diffusing unit has a tapered shape in which a cross-sectional area of the first waveguide is gradually increased toward a travelling direction of the laser beam.
摘要翻译：提供了一种光放大器，包括漫射单元，其被配置为由第一电流密度驱动并且增加穿过引导激光束的第一波导的入射激光束的光束直径;以及放大单元，被配置为被驱动通过比第一电流密度高的第二电流密度，并放大穿过引导其通过扩散单元增加光束直径的激光束的第二波导的激光束的强度。漫射单元的第一波导具有锥形形状，其中第一波导的横截面积朝向激光束的行进方向逐渐增加。

13. 发明授权

US08969113B2 Optical device structure using GaN substrates and growth structures for laser applications 有权
标题翻译：使用GaN衬底的光学器件结构和用于激光应用的生长结构
公开(公告)号：US08969113B2
公开(公告)日：2015-03-03
申请号：US14229738
申请日：2014-03-28
申请人： Soraa Laser Diode, Inc.
发明人： James W. Raring
IPC分类号： H01L21/00
CPC分类号： H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
摘要翻译：公开了具有为选定的发光波长配置的结构化有源区的光学器件。

14. 发明申请

US20150049777A1 HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE 审中-公开
标题翻译：高速SMSR单向蚀刻激光器和低反射光电装置
公开(公告)号：US20150049777A1
公开(公告)日：2015-02-19
申请号：US14528450
申请日：2014-10-30
申请人： BinOptics Corporation
发明人： Alex A Behfar , Alfred T Schremer, JR. , Cristian Stagarescu
IPC分类号： H01S5/028
CPC分类号： H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/06817 , H01S5/0687 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/1085 , H01S5/125 , H01S5/14
摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
摘要翻译：通过在激光腔中形成一个或多个蚀刻间隙来增强激光器的单向性。可以在激光器的任何部分（例如环形激光器的任何腿部）或V形激光器的一条腿中提供间隙。耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。

15. 发明申请

US20150024526A1 OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS 有权
标题翻译：使用GAN基板的光学器件结构和激光应用的生长结构
公开(公告)号：US20150024526A1
公开(公告)日：2015-01-22
申请号：US14229738
申请日：2014-03-28
申请人： Soraa Laser Diode, Inc.
发明人： James W. Raring
IPC分类号： H01S5/20 , H01S5/343
CPC分类号： H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
摘要翻译：公开了具有为选定的发光波长配置的结构化有源区的光学器件。

16. 发明授权

US08891576B2 High SMSR unidirectional etched lasers and low back-reflection photonic device 有权
标题翻译：高SMSR单向蚀刻激光器和低背反射光子器件
公开(公告)号：US08891576B2
公开(公告)日：2014-11-18
申请号：US12895979
申请日：2010-10-01
申请人： Alex A. Behfar , Alfred T. Schremer, Jr. , Cristian B. Stagarescu
发明人： Alex A. Behfar , Alfred T. Schremer, Jr. , Cristian B. Stagarescu
IPC分类号： H01S3/083 , G02F1/17 , G02B6/12 , H01S5/125 , H01S5/00 , H01S5/10 , H01S5/065 , H01S5/14
CPC分类号： H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/06817 , H01S5/0687 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/1085 , H01S5/125 , H01S5/14
摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
摘要翻译：通过在激光腔中形成一个或多个蚀刻间隙（78,80）来增强激光器的单向性。可以在激光器的任何部分（例如环形激光器的任何腿部）中或在V形激光器（60）的一个腿部（62）中提供间隙。耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。

17. 发明授权

US08569088B2 Semiconductor light-emitting element and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08569088B2
公开(公告)日：2013-10-29
申请号：US13621065
申请日：2012-09-15
申请人： Kenji Orita
发明人： Kenji Orita
IPC分类号： H01S5/00
CPC分类号： H01L33/0045 , B82Y20/00 , H01S5/0207 , H01S5/1085 , H01S5/125 , H01S5/2201 , H01S5/3201 , H01S5/34333
摘要： A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.
摘要翻译：半导体发光元件包括：基板; 以及设置在所述基板的上表面并且包括有源层的氮化物半导体多层膜。在与有源层的下表面接触的有源层或层中形成凹部，台阶部或突出部。在氮化物半导体多层膜的上部形成有具有前端面和后端面并用作光波导的脊条。从脊条的横向中心到凹部的横向中心，阶梯部分或突出部分的距离从前端小面朝向后端小面连续或分阶段地变化。有源层的带隙能量从前端小面向后端小面连续或分阶段变化。

18. 发明授权

US08548015B2 Wavelength-tunable external cavity laser module 有权
标题翻译：波长可调外腔激光模块
公开(公告)号：US08548015B2
公开(公告)日：2013-10-01
申请号：US12978957
申请日：2010-12-27
申请人： Byung-seok Choi
发明人： Byung-seok Choi
IPC分类号： H01S3/10
CPC分类号： H01S5/02284 , G02B6/421 , H01S5/02216 , H01S5/02446 , H01S5/0427 , H01S5/0612 , H01S5/06226 , H01S5/101 , H01S5/1085 , H01S5/147 , H01S5/2275
摘要： Provided is a wavelength-tunable external cavity laser module. The wavelength-tunable external cavity laser module includes: a gain medium generating light; an optical waveguide combined with the gain medium and including a Bragg grating and a thin film heater adjusting a temperature of the Bragg grating; and a high frequency transmission medium delivering a high frequency signal to the gain medium, wherein the high frequency transmission medium controls an operating speed of the light.
摘要翻译：提供了一种波长可调谐的外腔激光模块。波长可调外腔激光器模块包括：增益介质产生光; 与增益介质结合并包括布拉格光栅和调节布拉格光栅温度的薄膜加热器的光波导; 以及向所述增益介质输送高频信号的高频传输介质，其中所述高频传输介质控制所述光的操作速度。

19. 发明授权

US08537872B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08537872B2
公开(公告)日：2013-09-17
申请号：US13531218
申请日：2012-06-22
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01S3/081
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0287 , H01S5/1003 , H01S5/1085
摘要： A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.
摘要翻译：发光器件包括第一和第二覆层及其间的有源层，包括第一和第二侧表面以及第一和第二增益区域，第二侧反射率高于第一侧反射率，第一增益区域的第一端面部分在重叠平面中与第二增益区域的第二端面重叠，第一增益区域从第一端面向第三端面倾斜延伸，第二增益区域从第二端面向第四端面倾斜延伸，连接第一和第三端面的中心的第一中心线和连接第二和第四端面的中心的第二中心线相交，并且重叠平面从交点向第一侧面移动。

20. 发明授权

US08494017B2 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权
标题翻译：在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件
公开(公告)号：US08494017B2
公开(公告)日：2013-07-23
申请号：US13606894
申请日：2012-09-07
申请人： Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
发明人： Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译：边缘发射固态激光器和方法。激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。激光器的边缘包括{1 1-2±6}面。激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。该激光器可用于光学数据存储，投影显示器和一般照明源。

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