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11. 发明申请

US20140261674A1 PHOTOVOLTAIC MODULE HAVING PRINTED PV CELLS CONNECTED IN SERIES BY PRINTED CONDUCTORS 有权
标题翻译：印刷电路连接的印刷光伏电池的光伏组件
公开(公告)号：US20140261674A1
公开(公告)日：2014-09-18
申请号：US14214559
申请日：2014-03-14
申请人： Nthdegree Technologies Worldwide Inc.
发明人： Tricia Youngbull , Bradley Steven Oraw , William Johnstone Ray
IPC分类号： H01L31/18 , H01L31/0352
CPC分类号： H01L31/1824 , H01L27/1421 , H01L31/035281 , H01L31/03529 , H01L31/0443 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/18 , H01L31/188 , Y02E10/50
摘要： A PV module is formed having an array of PV cells, where the cells are separated by gaps. Each cell contains an array of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The diodes and conductor layers may be patterned by printing. A continuous metal substrate supports the diodes and conductor layers in all the cells. A dielectric substrate is laminated to the metal substrate. Trenches are then formed by laser ablation around the cells to sever the metal substrate to form electrically isolated PV cells. A metallization step is then performed to connect the cells in series to increase the voltage output of the PV module. An electrically isolated bypass diode for each cell is also formed by the trenching step. The metallization step connects the bypass diode and its associated cell in a reverse-parallel relationship.
摘要翻译：形成具有PV电池阵列的PV模块，其中电池被间隙分开。每个电池都包含并联连接的小硅球二极管阵列（直径10-300微米）。可以通过印刷将二极管和导体层图案化。连续的金属基板在所有单元中支撑二极管和导体层。将电介质基板层压到金属基板上。然后通过在细胞周围的激光烧蚀形成沟槽，以切断金属基底以形成电隔离的PV电池。然后执行金属化步骤以串联连接电池，以增加PV模块的电压输出。用于每个电池的电隔离旁路二极管也通过开沟步骤形成。金属化步骤以反平行关系连接旁路二极管及其相关联的电池。

12. 发明授权

US08835753B2 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08835753B2
公开(公告)日：2014-09-16
申请号：US13101996
申请日：2011-05-05
申请人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Hsin-Feng Li , Zhen-Cheng Wu
IPC分类号： H01L31/036 , H01L31/0392 , H01L31/18 , H01L31/0747 , H01L31/0368 , H01L31/068
CPC分类号： H01L31/03685 , H01L31/068 , H01L31/0747 , H01L31/1824 , H01L31/1872 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
摘要翻译：太阳能电池包括半导体基底，第一掺杂半导体层，绝缘层，第二掺杂半导体层和第一电极层。半导体基底具有第一掺杂型。设置在半导体基底上的第一掺杂半导体层具有掺杂的接触区域。绝缘层设置在第一掺杂半导体层上，暴露掺杂的接触区域。第二掺杂半导体层设置在绝缘层和掺杂接触区域上。第一掺杂半导体层，掺杂接触区域和第二掺杂半导体层具有第二掺杂类型，并且第二掺杂半导体层的掺杂剂浓度在第一掺杂半导体层和掺杂接触区域的掺杂浓度之间。第一电极层对应于掺杂的接触区域设置。

13. 发明申请

US20140248733A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：制造光电转换器件的方法
公开(公告)号：US20140248733A1
公开(公告)日：2014-09-04
申请号：US14349936
申请日：2012-09-27
申请人： SHARP KABUSHIKI KAISHA,
发明人： Shinya Honda , Yoshiyuki Nasuno , Takashi Yamada , Kazuhito Nishimura
IPC分类号： H01L21/66 , H01L31/18
CPC分类号： H01L22/26 , H01L31/076 , H01L31/18 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a method of manufacturing a photoelectric conversion device for forming a semiconductor layer on a substrate by the plasma CVD method. The method includes a first plasma processing step in which a processing temperature reaches a first temperature; a second plasma processing step in which the processing temperature reaches a second temperature; a temperature regulating step of lowering the processing temperature to a third temperature lower than the first temperature and the second temperature after the first plasma processing step and before the second plasma processing step; and a temperature raising step of raising the processing temperature from the third temperature to the second temperature. The first plasma processing step, the temperature regulating step, the temperature raising step, and the second plasma processing step are carried out within the same reaction chamber.
摘要翻译：本发明提供一种通过等离子体CVD方法制造用于在衬底上形成半导体层的光电转换器件的方法。该方法包括第一等离子体处理步骤，其中处理温度达到第一温度; 第二等离子体处理步骤，其中处理温度达到第二温度; 温度调节步骤，将处理温度降低到比第一等离子体处理步骤之后和第二等离子体处理步骤之前的第一温度和第二温度低的第三温度; 以及将处理温度从第三温度提高到第二温度的升温步骤。第一等离子体处理步骤，温度调节步骤，升温步骤和第二等离子体处理步骤在相同的反应室内进行。

14. 发明授权

US08815635B2 Manufacturing method of photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US08815635B2
公开(公告)日：2014-08-26
申请号：US13285062
申请日：2011-10-31
申请人： Tetsuhiro Tanaka , Fumito Isaka
发明人： Tetsuhiro Tanaka , Fumito Isaka
IPC分类号： H01L21/00 , H01L31/076
CPC分类号： H01L31/076 , H01L31/0747 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.
摘要翻译：光电转换装置具有包括与单晶硅衬底接触的第一非晶硅层和第二非晶硅层以及具有一种导电型的第一微晶硅层和具有导电性的第二微晶硅层的结构类型与分别与第一和第二非晶硅层接触的一种导电类型相反。使用适合高压成膜条件的等离子体CVD装置形成第一和第二微晶硅层。

15. 发明授权

US08704084B2 Multiple-junction photoelectric device and its production process 失效
标题翻译：多结光电器件及其生产工艺
公开(公告)号：US08704084B2
公开(公告)日：2014-04-22
申请号：US13130228
申请日：2009-11-18
申请人： Thomas Soderstrom , Franz-Joseph Haug , Xavier Niquille
发明人： Thomas Soderstrom , Franz-Joseph Haug , Xavier Niquille
IPC分类号： H01L31/00
CPC分类号： H01L31/1824 , H01L31/0236 , H01L31/0547 , H01L31/0687 , Y02E10/52 , Y02E10/544 , Y02E10/545 , Y02P70/521
摘要： A multiple-junction photoelectric device includes a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting layer is deposited, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, top and bottom faces, the latter having a peak-valley roughness >150 nm, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α90bottom
摘要翻译：多结光电装置包括其上沉积有第一导电层的衬底，其上沉积有第二导电层的至少两个nip或np构型的基本光电器件，以及在两个相邻的基本光电器件之间的至少一个中间层设备。中间层在入射光侧具有顶面和底面，后者具有> 150nm的峰谷粗糙度，顶面和底面分别具有包括倾斜基本表面的表面形态，因此α90底部<α90顶部至少3 ; 其中α90top是中间层的顶面的90％的基本表面具有倾斜度的角度＆nlE;该角度和α90底部是底面的表面的90％的基本表面的角度中间层具有倾斜度＆nlE;该角度。

16. 发明授权

US08631762B2 Plasma CVD apparatus, method for manufacturing semiconductor film, method for manufacturing thin-film solar cell, and method for cleaning plasma CVD apparatus 失效
标题翻译：等离子体CVD装置，半导体膜的制造方法，薄膜太阳能电池的制造方法以及等离子体CVD装置的清洗方法
公开(公告)号：US08631762B2
公开(公告)日：2014-01-21
申请号：US13121523
申请日：2009-10-14
申请人： Mikio Yamamuka , Tae Orita , Hiroya Yamarin
发明人： Mikio Yamamuka , Tae Orita , Hiroya Yamarin
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/4405 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： A plasma CVD apparatus includes: a film forming chamber; a holding member that holds a substrate to be processed that is set in the film forming chamber; a shower head that is set in the film forming chamber to face the holding member, and supplies raw material gas and generates a plasma of the raw material gas; a radical generation chamber that is set at an opposite side of the shower head relative to the holding member and generates radicals of process gas; and an openable and closable shutter that is provided between the shower head and the radical generation chamber.
摘要翻译：等离子体CVD装置包括：成膜室; 保持部件，其保持被设置在所述成膜室中的被处理基板; 设置在成膜室中的与保持部件相对的喷头，供给原料气体，生成原料气体的等离子体; 自由基产生室，其相对于保持构件设置在淋浴头的相对侧并产生处理气体的自由基; 以及设置在淋浴头和自由基产生室之间的可开闭的快门。

17. 发明申请

US20130344641A1 MECHANICAL AND CHEMICAL TEXTURIZATION OF A SILICON SHEET FOR PHOTOVOLTAIC LIGHT TRAPPING 审中-公开
标题翻译：用于光伏照明的硅片的机械和化学文化
公开(公告)号：US20130344641A1
公开(公告)日：2013-12-26
申请号：US13841109
申请日：2013-03-15
申请人： CORNING INCORPORATED
发明人： Glen Bennett Cook , Kamal Kishore Soni , Christopher Scott Thomas , Lili Tian
IPC分类号： H01L31/18
CPC分类号： H01L31/1824 , H01L31/02363 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A process for modifying a surface of a cast polycrystalline silicon sheet to decrease the light reflectance of the cast polycrystalline sheet is disclosed. The cast polycrystalline silicon sheet has at least one structural feature resulting from the cast polycrystalline silicon sheet being directly cast to a thickness less than 1000 micrometers. The process comprises grit blasting the surface of the cast polycrystalline silicon sheet to give an abraded surface on the cast polycrystalline silicon sheet. The process further comprises chemically etching the abraded surface of the cast polycrystalline silicon sheet to give a chemically-etched, abraded surface. The light reflectance of the chemically-etched, abraded surface is decreased in comparison to the light reflectance of the surface of the cast polycrystalline silicon sheet before the step of grit blasting.
摘要翻译：公开了一种用于改变流延多晶硅片的表面以降低铸塑多晶片的光反射率的方法。铸造的多晶硅片具有至少一个由铸造的多晶硅片直接铸造成小于1000微米厚度的结构特征。该方法包括喷砂铸造多晶硅片的表面以在铸造多晶硅片上产生磨损表面。该方法还包括化学蚀刻流延多晶硅片的磨损表面以产生化学蚀刻的磨损表面。与喷砂步骤之前的铸造多晶硅片的表面的光反射率相比，化学蚀刻的磨损表面的光反射率降低。

18. 发明申请

US20130040414A1 METHOD FOR MANUFACTURING A THIN-FILM SOLAR CELL 有权
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：US20130040414A1
公开(公告)日：2013-02-14
申请号：US13642736
申请日：2011-04-22
申请人： Koichiro Niira , Norikazu Ito , Shinichiro Inaba
发明人： Koichiro Niira , Norikazu Ito , Shinichiro Inaba
IPC分类号： H01L31/18
CPC分类号： H01L31/076 , C23C16/45565 , C23C16/4557 , C23C16/46 , C23C16/509 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.
摘要翻译：公开了一种使用等离子体在一对平行电极之间制造薄膜太阳能电池的方法。在该方法中，将基底构件放置在彼此面对的第一电极和第二电极之间的室中。氢气被加热，因此加热的氢气和硅基气体被引入到第一电极和第二电极之间的空间中。加热后的氢气与硅系气体的流量的比例为25以上且58以下。通过向第2电极施加高频电力，在第1电极与第2电极之间产生等离子体电极，同时室内的压力为1000Pa以上，并且在基材上沉积含有结晶硅的光学活性层。

19. 发明授权

US08368122B2 Multiple-junction photoelectric device 有权
标题翻译：多结光电器件
公开(公告)号：US08368122B2
公开(公告)日：2013-02-05
申请号：US13130205
申请日：2009-11-18
申请人： Didier Domine , Peter Cuony , Julien Bailat
发明人： Didier Domine , Peter Cuony , Julien Bailat
IPC分类号： H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113 , H01L31/06
CPC分类号： H01L31/202 , H01L31/02366 , H01L31/0547 , H01L31/0687 , H01L31/1824 , Y02E10/52 , Y02E10/544 , Y02E10/545 , Y02P70/521
摘要： A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α90bottom is smaller than α90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where α90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and α90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
摘要翻译：多结光电装置包括其上具有第一导电层的衬底，p-i-n或p-n构型的至少两个基本光电器件，其上具有第二导电层，以及在两个相邻的基本光电器件之间的至少一个中间层。中间层在入射光侧具有相对的顶面和底面，顶表面和底面分别具有包括倾斜元件表面的表面形态，因此α90底部小于α90顶部至少3°，优选为6°，更优选为10° °，甚至更优选15°; 其中α90top是中间层的顶面的90％的基本表面具有等于或小于该角度的倾角的角度，并且α90底部是底面的90％的基本表面的角度中间层具有等于或小于该角度的倾斜度。

20. 发明申请

US20130000711A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20130000711A1
公开(公告)日：2013-01-03
申请号：US13616502
申请日：2012-09-14
申请人： Yoshikazu YAMAOKA , Shigeo Yata , Azumi Umeda , Daiji Kanematsu
发明人： Yoshikazu YAMAOKA , Shigeo Yata , Azumi Umeda , Daiji Kanematsu
IPC分类号： H01L31/076
CPC分类号： H01L31/075 , H01L31/056 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/52 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In order to increase the photoelectric conversion efficiency of a photoelectric conversion device, the photoelectric conversion device (200) is provided with a first intermediate layer (44), which is arranged between a p-type layer (42) and an i-type layer (46) and which has a lower refractive index than refractive indices of the p-type layer (42) or the i-type layer (46), and a second intermediate layer (48), which is arranged between an n-type layer (50) and the i-type layer (46) and which has a lower refractive index than refractive indices of the n-type layer (50) or the i-type layer (46).
摘要翻译：为了提高光电转换装置的光电转换效率，光电转换装置（200）设置有第一中间层（44），其设置在p型层（42）和i型层（46），并且其折射率比p型层（42）或i型层（46）的折射率低;以及第二中间层（48），其布置在n型层（50）和i型层（46）的折射率比所述n型层（I）或所述i型层（46）的折射率低的折射率。

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