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11. 发明授权

US07781835B2 Lateral drain MOSFET with improved clamping voltage control 有权
标题翻译：具有改进的钳位电压控制的侧漏MOSFET
公开(公告)号：US07781835B2
公开(公告)日：2010-08-24
申请号：US12352057
申请日：2009-01-12
申请人： Bruce D. Marchant , Dean Probst
发明人： Bruce D. Marchant , Dean Probst
IPC分类号： H01L29/94
CPC分类号： H01L29/7821 , H01L29/0878 , H01L29/1095 , H01L29/4175 , H01L29/41766 , H01L29/456 , H01L29/4933 , H01L29/66696
摘要： A lateral MOSFET having a substrate, first and second epitaxial layers grown on the substrate and a gate electrode formed on a gate dielectric which in turn is formed on a top surface of the second epitaxial layer. The second epitaxial layer comprises a drain region which extends to a top surface of the epitaxial layer and is proximate to a first edge of the gate electrode, a source region which extends to a top surface of the second epitaxial layer and is proximate to a second edge of the gate electrode, a heavily doped body under at least a portion of the source region, and a lightly doped well under the gate dielectric located near the transition region of the first and second epitaxial layers. A PN junction between the heavily doped body and the first epitaxial region under the heavily doped body has an avalanche breakdown voltage that is substantially dependent on the doping concentration in the upper portion of the first epitaxial layer that is beneath the heavily doped body.
摘要翻译：具有衬底的横向MOSFET，在衬底上生长的第一和第二外延层和形成在栅极电介质上的栅电极，栅极电介质又形成在第二外延层的顶表面上。第二外延层包括漏极区域，其延伸到外延层的顶表面并且靠近栅电极的第一边缘，源区域延伸到第二外延层的顶表面并且接近第二外延层栅电极的边缘，在源极区的至少一部分下方的重掺杂体，以及位于第一和第二外延层的过渡区附近的栅电介质下的轻掺杂阱。重掺杂体之下的重掺杂体和第一外延区之间的PN结具有雪崩击穿电压，其基本上取决于在重掺杂体下面的第一外延层的上部的掺杂浓度。

12. 发明申请

US20080054325A1 Semiconductor device having lateral MOS transistor and Zener diode 有权
标题翻译：具有横向MOS晶体管和齐纳二极管的半导体器件
公开(公告)号：US20080054325A1
公开(公告)日：2008-03-06
申请号：US11892819
申请日：2007-08-28
申请人： Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H01L27/06
CPC分类号： H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/42356 , H01L29/42368 , H01L29/4238 , H01L29/7817 , H01L29/7821
摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.
摘要翻译：半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。该设备具有最小的尺寸和高切换速度。此外，改善了开关损耗和浪涌电压两者。

13. 发明申请

US20040026728A1 Semiconductor device and combined IC using the same 有权
标题翻译：半导体器件和使用其的组合IC
公开(公告)号：US20040026728A1
公开(公告)日：2004-02-12
申请号：US10442648
申请日：2003-05-21
发明人： Kazuhiko Yoshida , Takeshi Ichimura , Tatsuhiko Fujihira , Naoki Kumagai
IPC分类号： H01L027/108
CPC分类号： H01L29/7816 , H01L27/0251 , H01L29/7817 , H01L29/7821 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.
摘要翻译：半导体器件在集成智能开关器件，双积分型信号输入和转换IC以及组合电源IC中使用的横向MOSFET的窄芯片区域内实现了高静电放电耐受能力和高耐冲击能力。半导体器件包括其中基极电连接到发射极和集电极的垂直双极晶体管，以及包括连接到表面电极的漏电极的横向MOSFET。当施加高静电放电电压或高浪涌电压时，垂直双极晶体管吸收静电放电或浪涌能量，并将静电放电电压或浪涌电压限制为低于横向MOSFET的击穿电压。

14. 发明授权

US06677642B2 Field effect transistor structure and method of manufacture 有权
标题翻译：场效应晶体管结构及制造方法
公开(公告)号：US06677642B2
公开(公告)日：2004-01-13
申请号：US10099683
申请日：2002-03-15
申请人： Steven T. Peake , Raymond J. Grover
发明人： Steven T. Peake , Raymond J. Grover
IPC分类号： H01L2976
CPC分类号： H01L29/404 , H01L21/266 , H01L27/0255 , H01L29/0847 , H01L29/0878 , H01L29/402 , H01L29/42368 , H01L29/4983 , H01L29/66681 , H01L29/7821 , H01L29/7824 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor structure is formed with a body semiconductor layer (5) having source (9), body (7), drift region and drain (11). An upper semiconductor layer (21) is separated from the body by an oxide layer (17). The upper semiconductor layer (21) is doped to have a gate region (23) arranged over the body (7), a field plate region (25) arranged over the drift region 13 and at least one p-n junction (26) forming at least one diode between the field plate region (25) and the gate region (23). A source contact (39) is connected to both the source (9) and the field plate region (25).
摘要翻译：场效应晶体管结构形成有具有源极（9），主体（7），漂移区域和漏极（11）的主体半导体层（5）。上半导体层（21）通过氧化物层（17）与主体分离。上半导体层（21）被掺杂以具有布置在主体（7）上的栅极区（23），布置在漂移区13上的场板区（25）和至少形成至少一个pn结（26）在场板区域（25）和栅极区域（23）之间的一个二极管。源极接触（39）连接到源极（9）和场板区域（25）。

15. 发明授权

US06603185B1 Voltage withstanding structure for a semiconductor device 有权
标题翻译：用于半导体器件的耐压结构
公开(公告)号：US06603185B1
公开(公告)日：2003-08-05
申请号：US09494995
申请日：2000-01-31
申请人： Shinichi Jimbo , Jun Saito , Tomoyuki Yamazaki
发明人： Shinichi Jimbo , Jun Saito , Tomoyuki Yamazaki
IPC分类号： H01L2358
CPC分类号： H01L29/7816 , H01L27/0611 , H01L29/402 , H01L29/404 , H01L29/7801 , H01L29/7821 , H01L29/7823 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising: a semiconductor substrate, a dielectric film formed on the semiconductor substrate, a first electrode and a second electrode separated from each other on the dielectric film; a spiral thin film layer having both ends connected to the first electrode and the second electrode, respectively, the spiral thin film layer surrounding the first electrode, the thin film layer being formed on the dielectric layer, and a plurality of p-n diodes formed in series in the spiral thin film layer along a longitudinal direction of the spiral thin film layer.
摘要翻译：一种半导体器件，包括：半导体衬底，形成在所述半导体衬底上的电介质膜，在所述电介质膜上彼此分离的第一电极和第二电极; 螺旋形薄膜层，其两端分别与第一电极和第二电极连接，围绕第一电极的螺旋形薄膜层，形成在电介质层上的薄膜层和串联形成的多个pn二极管沿着螺旋形薄膜层的纵向在螺旋形薄膜层中。

16. 发明申请

US20010032999A1 GaN-based compound semiconductor device 有权
标题翻译： GaN系化合物半导体装置
公开(公告)号：US20010032999A1
公开(公告)日：2001-10-25
申请号：US09843276
申请日：2001-04-25
发明人： Seikoh Yoshida
IPC分类号： H01L031/0328
CPC分类号： H01L29/66674 , H01L29/2003 , H01L29/267 , H01L29/4232 , H01L29/4238 , H01L29/7397 , H01L29/7455 , H01L29/7801 , H01L29/7802 , H01L29/7821 , H01L29/7825
摘要： A semiconductor device having a high breakdown and capable of operating with a large current is realized using GaN-based compound semiconductors which exhibit good electric characteristics. Particularly, a semiconductor material having a larger band gap than semiconductor materials forming other semiconductor layers, for example, AlGaN is used for a semiconductor layer immediately below a gate electrode to realize a power device of vertical structure which comprises GTO or IGBT. Also, in a semiconductor device having a GaN-based insulated gate structure which has a third semiconductor layer comprising a source region embedded in a first GaN-based semiconductor layer through a second semiconductor layer, and a fourth semiconductor layer comprising a drain region embedded in the first semiconductor layer spaced apart from the second semiconductor layer, a pn junction diode connected in parallel between a gate and a source is formed between the third semiconductor layer and the fourth semiconductor layer to increase the breakdown.
摘要翻译：利用具有良好的电气特性的GaN系化合物半导体，实现具有高击穿能力且能够大电流工作的半导体器件。特别地，与形成其他半导体层的半导体材料（例如AlGaN）相比，具有较大的带隙的半导体材料被用于栅电极正下方的半导体层，以实现包括GTO或IGBT的垂直结构的功率器件。此外，在具有GaN基绝缘栅极结构的半导体器件中，具有通过第二半导体层包含嵌入在第一GaN基半导体层中的源极区的第三半导体层，以及包含嵌入在第一GaN基半导体层中的漏极区的第四半导体层与第二半导体层间隔开的第一半导体层，在第三半导体层和第四半导体层之间形成并联连接在栅极和源极之间的pn结二极管，以增加击穿。

17. 发明授权

US4990976A Semiconductor device including a field effect transistor having a protective diode between source and drain thereof 失效
标题翻译：半导体器件包括其源极和漏极之间具有保护二极管的场效应晶体管
公开(公告)号：US4990976A
公开(公告)日：1991-02-05
申请号：US274918
申请日：1988-11-22
申请人： Masayuki Hattori
发明人： Masayuki Hattori
IPC分类号： H01L27/02 , H01L27/07 , H01L29/78
CPC分类号： H01L29/7808 , H01L27/0255 , H01L27/0727 , H01L29/7809 , H01L29/7821 , H01L29/0626 , H01L29/0696 , H01L29/0878
摘要： A field effect transistor includes an N-type semiconductor substrate of a drain region, a P-type base region formed in a surface of the semiconductor substrate, an N-type source region formed in the base region, a gate electrode formed on a base region between the source region and the semiconductor substrate, an N-type region having higher impurity concentration than the semiconductor substrate and formed in the surfaces of both the P-type base region and the N-type semiconductor substrate for forming a Zener diode between source and drain, a source electrode formed on the surface and connected to the source and base region, and a drain electrode connected to the semiconductor substrate. The N-type region for forming a Zener diode is formed by an ion implantation method.

18. 发明申请

US20170287894A1 DEVICES WITH AN EMBEDDED ZENER DIODE 有权
公开(公告)号：US20170287894A1
公开(公告)日：2017-10-05
申请号：US15089787
申请日：2016-04-04
申请人： Allegro Microsystems, LLC
发明人： Chung C. Kuo , Maxim Klebanov
IPC分类号： H01L27/02 , H01L29/74 , H01L29/739 , H01L29/10 , H01L29/78 , H01L29/866
CPC分类号： H01L27/0259 , H01L27/0255 , H01L27/0262 , H01L27/0266 , H01L29/0649 , H01L29/1095 , H01L29/42368 , H01L29/7393 , H01L29/7412 , H01L29/7436 , H01L29/7821 , H01L29/861 , H01L29/866 , H01L29/87
摘要： In one aspect, a silicon-controlled rectifier (SCR) includes a Zener diode embedded in the SCR. In another aspect, a laterally diffused metal oxide semiconductor (LDMOS) includes a Zener diode embedded in the LDMOS. In a further aspect, a lateral insulated-gate bipolar transistor (IGBT) includes a Zener diode embedded in the IGBT.

19. 发明授权

US09343568B2 Semiconductor device having high-resistance conductor structure, method of manufacturing the same and method of operating the same 有权
标题翻译：具有高电阻导体结构的半导体器件及其制造方法及其操作方法
公开(公告)号：US09343568B2
公开(公告)日：2016-05-17
申请号：US14275580
申请日：2014-05-12
申请人： MACRONIX International Co., Ltd.
发明人： Wing-Chor Chan
IPC分类号： H01L21/8238 , H01L29/78 , H01L29/866 , H01L29/10 , H01L29/66 , H01L27/06 , H03K17/687
CPC分类号： H01L29/7821 , H01L27/0629 , H01L29/0623 , H01L29/063 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/1041 , H01L29/1083 , H01L29/1095 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/405 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7838 , H01L29/866 , H03K17/687 , H03K2217/0018
摘要： Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resistance which is sufficient for flowing most of current to pass the metal oxide semiconductor transistor. The Zener diode includes a cathode and an anode, in which the cathode is electrically connected the gate and another end of the resistor, and the anode is electrically connected to a gate body.
摘要翻译：提供了包括金属氧化物半导体晶体管，齐纳二极管和电阻器的半导体器件。金属氧化物半导体晶体管包括栅极，源极和漏极。电阻器的一端电连接到漏极，其中电阻器包括足以使大部分电流流过金属氧化物半导体晶体管的高电阻。齐纳二极管包括阴极和阳极，其中阴极电连接电阻器的栅极和另一端，并且阳极电连接到栅极主体。

20. 发明申请

US20150325694A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD OF OPERATING THE SAME 有权
标题翻译：半导体器件，其制造方法及其操作方法
公开(公告)号：US20150325694A1
公开(公告)日：2015-11-12
申请号：US14275580
申请日：2014-05-12
申请人： MACRONIX International Co., Ltd.
发明人： Wing-Chor Chan
IPC分类号： H01L29/78 , H03K17/687 , H01L29/66 , H01L27/06 , H01L29/866 , H01L29/10
CPC分类号： H01L29/7821 , H01L27/0629 , H01L29/0623 , H01L29/063 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/1041 , H01L29/1083 , H01L29/1095 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/405 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7838 , H01L29/866 , H03K17/687 , H03K2217/0018
摘要： Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resistance which is sufficient for flowing most of current to pass the metal oxide semiconductor transistor. The Zener diode includes a cathode and an anode, in which the cathode is electrically connected the gate and another end of the resistor, and the anode is electrically connected to a gate body.
摘要翻译：提供了包括金属氧化物半导体晶体管，齐纳二极管和电阻器的半导体器件。金属氧化物半导体晶体管包括栅极，源极和漏极。电阻器的一端电连接到漏极，其中电阻器包括足以使大部分电流流过金属氧化物半导体晶体管的高电阻。齐纳二极管包括阴极和阳极，其中阴极电连接电阻器的栅极和另一端，并且阳极电连接到栅极主体。

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