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11. 发明申请

US20160163340A1 MICROWAVE-ASSISTED MAGNETIC HEAD AND MAGNETIC RECORDING/REPRODUCING APPARATUS 审中-公开
标题翻译：微波辅助磁头和磁记录/再现装置
公开(公告)号：US20160163340A1
公开(公告)日：2016-06-09
申请号：US14639067
申请日：2015-03-04
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Naoyuki Narita , Kenichiro Yamada , Yusuke Tomoda , Akihiko Takeo
IPC分类号： G11B5/48
CPC分类号： G11B5/314 , G11B2005/0024
摘要： According to one embodiment, a microwave-assisted magnetic head includes a main magnetic pole configured to apply a recording magnetic field to a magnetic recording medium, an auxiliary magnetic pole configured to constitute a magnetic circuit together with the main magnetic pole, and a domain propagation element including a domain propagation path having two ends and a magnetic anisotropy perpendicular to a domain propagation direction, and a domain input portion configured to write a magnetic domain in the domain propagation path, and a current supply mechanism connected to the domain propagation path, and at least part of the domain propagation path passes between the main magnetic pole and the auxiliary magnetic pole.
摘要翻译：根据一个实施例，微波辅助磁头包括被配置为向磁记录介质施加记录磁场的主磁极，被配置为与主磁极一起构成磁路的辅助磁极，以及域传播包括具有两端的域传播路径和垂直于域传播方向的磁各向异性的区域输入部，以及配置为在域传播路径中写入磁畴的域输入部，以及连接到域传播路径的电流供给机构，域传播路径的至少一部分通过主磁极和辅助磁极之间。

12. 发明申请

US20160148627A1 SPIN TORQUE OSCILLATOR WITH LOW MAGNETIC MOMENT AND HIGH PERPENDICULAR MAGNETIC ANISOTROPY MATERIAL 有权
标题翻译：旋转扭矩振荡器，具有低磁性和高次磁性各向异性材料
公开(公告)号：US20160148627A1
公开(公告)日：2016-05-26
申请号：US14548853
申请日：2014-11-20
申请人： HGST Netherlands B.V.
发明人： Keiichi NAGASAKA , Yo SATO , Masashige SATO , Susumu OKAMURA , Masato SHIIMOTO , Masukazu IGARASHI
IPC分类号： G11B5/35 , H03B15/00 , G11B5/17
CPC分类号： G11B5/35 , G11B5/314 , G11B5/607 , G11B2005/0024
摘要： Embodiments disclosed herein generally relate to a magnetic disk device employing a MAMR head. The MAMR head includes an STO. The STO comprises an underlayer, an SPL, an interlayer, an FGL, and a capping layer. The SPL is comprised of a high perpendicular magnetic anisotropy material. The SPL has a large effective perpendicular magnetic anisotropy field, and the SPL has a lower magnetic moment than the FGL. An applied current is adapted to flow in a direction from the FGL to the SPL resulting in the magnetization direction of the SPL being almost perpendicular to the FGL and anti-parallel to a head-gap magnetic field due to a relation between a first spin torque directed from the SPL to the FGL and a second spin torque directed from the FGL to the SPL.
摘要翻译：本文公开的实施例通常涉及采用MAMR头的磁盘装置。 MAMR头包括STO。 STO包括底层，SPL，中间层，FGL和覆盖层。 SPL由高垂直磁各向异性材料组成。 SPL具有大的有效垂直磁各向异性场，SPL具有比FGL低的磁矩。施加的电流适于沿着从FGL到SPL的方向流动，导致SPL的磁化方向几乎垂直于FGL，并且由于第一自旋转矩之间的关系而与头间隙磁场反平行从SPL引导到FGL，以及从FGL指向SPL的第二自旋扭矩。

13. 发明授权

US09349396B2 CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording 有权
公开(公告)号：US09349396B2
公开(公告)日：2016-05-24
申请号：US14626983
申请日：2015-02-20
申请人： Headway Technologies, Inc.
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/235 , G11B5/31 , G11B5/39 , G11B5/33 , B82Y10/00 , B82Y25/00 , G01R33/09 , G01R33/12 , G11B5/127 , H01F41/30 , H01L43/08 , H01L43/10 , H01L43/12 , B82Y40/00 , H01F1/057 , G11B5/00 , H01F10/32
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

14. 发明授权

US09336797B2 Extended spin torque oscillator 有权
标题翻译：扩展自旋扭矩振荡器
公开(公告)号：US09336797B2
公开(公告)日：2016-05-10
申请号：US14290768
申请日：2014-05-29
申请人： HGST Netherlands B.V.
发明人： Masukazu Igarashi , Masato Matsubara , Keiichi Nagasaka , Yo Sato , Masato Shiimoto , Masashige Sato
IPC分类号： G11B5/00 , G11B5/127
CPC分类号： G11B5/00 , G11B5/1278 , G11B5/23 , G11B5/235 , G11B5/3146 , G11B2005/0024
摘要： The present disclosure generally relates to a high-frequency oscillator for use in a recording device having a microwave-assisted magnetic recording head. The microwave-assisted magnetic recording head achieves a large assist effect by using an extended spin torque oscillator disposed between a main magnetic pole and a pole opposite the main magnetic pole. The spin torque oscillator obtains a strong high-frequency magnetic field and comprises a first non-magnetic spin scatterer, a reference layer, a first non-magnetic spin transfer layer, a first magnetic field generating layer, a second non-magnetic spin transfer layer, a second magnetic field generating layer, and a second non-magnetic spin scatterer. The spin torque oscillator has a drive current flowing though in the direction from the first magnetic field generating layer to the reference layer.
摘要翻译：本公开总体上涉及用于具有微波辅助磁记录头的记录装置中的高频振荡器。微波辅助磁记录头通过使用设置在主磁极和与主磁极相对的极之间的扩展旋转扭矩振荡器来实现大的辅助效果。旋转扭矩振荡器获得强的高频磁场，并且包括第一非磁性旋转散射体，参考层，第一非磁性自旋转移层，第一磁场产生层，第二非磁性自旋转移层，第二磁场产生层和第二非磁性旋转散射体。自旋转矩振荡器具有沿着从第一磁场产生层到参考层的方向流动的驱动电流。

15. 发明授权

US09330691B1 Microwave assisted magnetic head 有权
标题翻译：微波辅助磁头
公开(公告)号：US09330691B1
公开(公告)日：2016-05-03
申请号：US14812556
申请日：2015-07-29
申请人： Kabushiki Kaisha Toshiba
发明人： Naoyuki Narita , Kenichiro Yamada , Tomoko Taguchi , Takuya Matsumoto
IPC分类号： G11B5/127
CPC分类号： G11B5/127 , G11B5/1278 , G11B5/23 , G11B5/3116 , G11B5/314 , G11B5/3146 , G11B2005/0024
摘要： According to one embodiment, a microwave assisted magnetic head includes a spin torque oscillator, and if driving current of the spin torque oscillator is zero, a magnetization direction of the spin injection layer is identical regardless of polarity of recording current, and if the driving current of the spin torque oscillator is not zero, the magnetization direction of the spin injection layer changes in response to the polarity of the recording current.
摘要翻译：根据一个实施例，微波辅助磁头包括自旋转矩振荡器，并且如果自旋转矩振荡器的驱动电流为零，则无论记录电流的极性如何，自旋注入层的磁化方向是相同的，并且如果驱动电流自旋转矩振荡器的磁化方向不为零时，自旋注入层的磁化方向随记录电流的极性而变化。

16. 发明授权

US09305584B2 Determining oscillation characteristic for high-frequency assisted magnetic recording device 有权
标题翻译：确定高频辅助磁记录装置的振荡特性
公开(公告)号：US09305584B2
公开(公告)日：2016-04-05
申请号：US14626460
申请日：2015-02-19
申请人： Kabushiki Kaisha Toshiba
发明人： Gaku Koizumi , Tomoko Taguchi
IPC分类号： G11B11/00 , G11B7/00 , G11B5/00
CPC分类号： G11B7/00 , G11B5/02 , G11B5/23 , G11B5/3146 , G11B5/607 , G11B2005/0021 , G11B2005/0024
摘要： A magnetic disk device according to an embodiment includes a magnetic head including a write head with a high-frequency oscillator and a read head, a recording medium, a driving unit configured to moves the magnetic head on the recording medium, a measuring unit configured to obtain a first read signal with no current or a smaller current and a second read signal with a normal current supplied in the normal writing operation, a comparison unit configured to calculate comparative data indicating a comparison result between the first and second read signals, and a determination unit configured to determine an oscillation characteristic from the comparative data.
摘要翻译：根据实施例的磁盘装置包括磁头，其包括具有高频振荡器的写入头和读取头，记录介质，被配置为使磁头移动到记录介质上的驱动单元，被配置为在正常写入操作中获得没有电流或较小电流的第一读取信号和具有正常电流的第二读取信号;比较单元，被配置为计算指示第一和第二读取信号之间的比较结果的比较数据，以及确定单元，被配置为从所述比较数据确定振荡特性。

17. 发明授权

US09286916B1 High frequency data writer field generator device 有权
标题翻译：高频数据写入器场发生器装置
公开(公告)号：US09286916B1
公开(公告)日：2016-03-15
申请号：US14469134
申请日：2014-08-26
申请人： Seagate Technology LLC
发明人： Kirill Rivkin , Mourad Benakli , Huaqing Yin
IPC分类号： G11B5/09 , G11B5/35 , G11B5/60
CPC分类号： G11B5/3146 , G11B5/23 , G11B2005/0024
摘要： A data writing device may be constructed and operated with at least a data writer that has at least a write pole and a magnetic feature. A controller may selectively activate the magnetic feature to magnetically oscillate and produce a radio frequency signal proximal the write pole on an air bearing surface (ABS).
摘要翻译：数据写入装置可以至少具有至少写入磁极和磁性特征的数据写入器来构造和操作。控制器可以选择性地激活磁性特征以磁性振荡并在空气轴承表面（ABS）上产生靠近写极的射频信号。

18. 发明申请

US20160035375A1 Data Storage Device with Phase Lock Spin-Torque Oscillation Stabilization 有权
公开(公告)号：US20160035375A1
公开(公告)日：2016-02-04
申请号：US14879906
申请日：2015-10-09
申请人： Seagate Technology LLC
发明人： Kaizhong Gao
IPC分类号： G11B5/35 , G11B5/60 , G11B5/012
CPC分类号： G11B5/35 , G11B5/012 , G11B5/11 , G11B5/1278 , G11B5/147 , G11B5/235 , G11B5/3116 , G11B5/314 , G11B5/3146 , G11B5/6082 , G11B2005/0024
摘要： A data storage device can be configured at least with a first spin-torque oscillator disposed between and contacting a write pole and a shield on an air bearing surface. A second spin-torque oscillator can be disposed between and contact the write pole and shield with the second spin-torque oscillator separated from the air bearing surface by a first stabilization distance and from the first spin-torque oscillator by a second stabilization distance. The first and second spin-torque oscillators can be configured to magnetostatically couple and phase lock to produce a single microwave frequency in response to a bias field.

19. 发明授权

US09252710B2 Free layer with out-of-plane anisotropy for magnetic device applications 有权
标题翻译：磁性器件应用具有面外各向异性的自由层
公开(公告)号：US09252710B2
公开(公告)日：2016-02-02
申请号：US13686169
申请日：2012-11-27
申请人： Headway Technologies, Inc.
发明人： Yu-Jen Wang , Guenole Jan , Ru-Ying Tong
IPC分类号： H03B15/00 , G11B5/66 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/10 , B82Y40/00 , H01F10/12 , G01R33/00 , G11B5/65 , G11B5/00 , G11B5/39
CPC分类号： G11C11/161 , B82Y40/00 , G01R33/00 , G01R33/093 , G01R33/098 , G01R33/1284 , G11B5/65 , G11B5/66 , G11B2005/0024 , G11B2005/3996 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/303 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006
摘要： Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability.
摘要翻译：公开了合成反铁磁（SAF）和合成亚铁磁（SyF）自由层结构，其减少Ho（对于SAF自由层），增加垂直磁各向异性（PMA），并提供高达至少400℃的更高的热稳定性。SAF 并且SyF结构具有FL1 / DL1 / spacer / DL2 / FL2配置，其中FL1和FL2是具有PMA的自由层，耦合层根据厚度在FL1和FL2之间引起反铁磁或亚铁磁耦合，并且DL1和DL2是增强的粉尘层 FL1和FL2之间的耦合。 SAF自由层可以与STT-MRAM存储元件中的SAF参考层或包括自旋转移振荡器的自旋电子器件一起使用。此外，描述了可以在Ho，PMA和热稳定性方面提供进一步优点的双重SAF结构。

20. 发明授权

US09230571B1 MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications 有权
标题翻译：基于MgO的垂直自旋偏振器在微波辅助磁记录（MAMR）应用中
公开(公告)号：US09230571B1
公开(公告)日：2016-01-05
申请号：US14468399
申请日：2014-08-26
申请人： Headway Technologies, Inc.
发明人： Wenyu Chen , Yan Wu
IPC分类号： G11B5/127 , G11B5/31 , G11B5/39 , G11B5/00
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/147 , G11B5/314 , G11B5/3146 , G11B5/3909 , G11B2005/0024
摘要： A design for a microwave assisted magnetic recording device is disclosed wherein a spin torque oscillator (STO) between a main pole and write shield has a spin polarization (SP) layer less than 30 Angstroms thick and perpendicular magnetic anisotropy (PMA) induced by an interface with one or two metal oxide layers. Back scattered spin polarized current from an oscillation layer is used to stabilize SP layer magnetization. One or both of the metal oxide layers may be replaced by a confining current pathway (CCP) structure. In one embodiment, the SP layer is omitted and spin polarized current is generated by a main pole/metal oxide interface. A direct current or pulsed current bias is applied across the STO. Rf current may also be injected into the STO to reduce critical current density. A write gap of 25 nm or less is achieved while maintaining good STO performance.
摘要翻译：公开了一种用于微波辅助磁记录装置的设计，其中在主极和写屏蔽之间的自旋极化振荡器（STO）具有小于30埃的自旋极化（SP）层和由界面引起的垂直磁各向异性（PMA）具有一个或两个金属氧化物层。使用来自振荡层的背散射自旋极化电流来稳定SP层的磁化强度。金属氧化物层中的一个或两个可以被限制电流通路（CCP）结构代替。在一个实施例中，SP层被省略，并且通过主极/金属氧化物界面产生自旋极化电流。在STO上施加直流或脉冲电流偏置。也可以将Rf电流注入STO以降低临界电流密度。在保持良好的STO性能的同时实现25nm或更小的写入间隙。

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