专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US09255343B2 Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal 有权
标题翻译：用于磁热效应（MCE）的铁基组合物和制备单晶的方法
公开(公告)号：US09255343B2
公开(公告)日：2016-02-09
申请号：US13790560
申请日：2013-03-08
申请人： UT-Battelle, LLC
发明人： Boyd Mccutchen Evans, III , Roger A. Kisner , Gail Mackiewicz Ludtka , Gerard Michael Ludtka , Alexander M. Melin , Donald M. Nicholson , Chad M. Parish , Orlando Rios , Athena S. Sefat , David L. West , John B. Wilgen
IPC分类号： C30B11/00 , H01F1/01 , C22C38/06 , C22C38/08 , C22C38/10 , C30B11/02 , C30B29/52 , C30B30/04
CPC分类号： C30B11/003 , C30B11/02 , C30B29/52 , C30B30/04 , H01F1/015
摘要： A method of making a single crystal comprises heating a material comprising magnetic anisotropy to a temperature T sufficient to form a melt of the material. A magnetic field of at least about 1 Tesla is applied to the melt at the temperature T, where a magnetic free energy difference ΔGm between different crystallographic axes is greater than a thermal energy kT. While applying the magnetic field, the melt is cooled at a rate of about 30° C./min or higher, and the melt solidifies to form a single crystal of the material.
摘要翻译：制造单晶的方法包括将包含磁各向异性的材料加热到足以形成材料熔体的温度T。在温度T下将至少约1特斯拉的磁场施加到熔体，其中不同结晶轴之间的自由能差Dgr; Gm大于热能kT。在施加磁场的同时，将熔体以约30℃/分钟或更高的速率冷却，熔体固化形成材料的单晶。

12. 发明授权

US09127377B2 Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material 有权
标题翻译：在从熔融的半导体材料中拉出单晶时产生均匀的磁场
公开(公告)号：US09127377B2
公开(公告)日：2015-09-08
申请号：US13590413
申请日：2012-08-21
申请人： Wolfgang Walter , Cristian Boffo , Philipp Revilak
发明人： Wolfgang Walter , Cristian Boffo , Philipp Revilak
IPC分类号： C30B15/22 , C30B30/04 , H01F38/00 , C30B15/30 , H01F6/04 , H01F6/06 , C30B29/06 , C30B29/08 , C30B29/42
CPC分类号： C30B30/04 , C30B15/305 , C30B29/06 , C30B29/08 , C30B29/42 , H01F6/04 , H01F6/06 , H01F38/00 , Y10T117/1068
摘要： A single-crystal pulling device includes vertically tilted magnetic coils between the walls of a cooling vessel. The inside and outside walls of the cooling vessel are coaxially aligned about a central axis. The inside wall of the cooling vessel is coaxially disposed around a cylindrical crucible that holds molten semiconductor material. A mid line passes through the middle point of a first coil, the central axis and the middle point of a second coil. The first coil is wound in a first plane, and the second coil is wound in a second plane. The first plane and the second plane both intersect the central axis at the same point. The first plane intersects the central axis at an angle between 5 and 15 degrees. In one embodiment, the first plane intersects the central axis below the crucible. In another embodiment, the first plane intersects the central axis above the crucible.
摘要翻译：单晶拉制装置包括在冷却容器的壁之间的垂直倾斜的磁性线圈。冷却容器的内壁和外壁围绕中心轴线共轴对准。冷却容器的内壁同时设置在保持熔融半导体材料的圆柱形坩埚周围。中线穿过第一线圈的中点，第二线圈的中心轴线和中点。第一线圈被卷绕在第一平面中，并且第二线圈缠绕在第二平面中。第一平面和第二平面在相同点处都与中心轴相交。第一平面与中心轴线以5度和15度之间的角度相交。在一个实施例中，第一平面与坩埚下方的中心轴相交。在另一个实施例中，第一平面与坩埚上方的中心轴相交。

13. 发明申请

US20150147258A1 SINGLE CRYSTAL SILICON INGOT AND WAFER, AND APPARATUS AND METHOD FOR GROWING SAID INGOT 审中-公开
标题翻译：单晶硅入口和波形，以及用于生长图像的装置和方法
公开(公告)号：US20150147258A1
公开(公告)日：2015-05-28
申请号：US14402405
申请日：2013-04-02
申请人： LG SILTRON INCORPORATED
发明人： Young Ho Hong , Jung Ha Hwang , Il Seon Cha
IPC分类号： C30B29/06 , C30B30/04 , C30B15/14
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/20 , C30B30/04 , Y10T117/1068
摘要： The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.
摘要翻译：一个实施例的单晶硅锭和晶片具有形成在其中的过渡区域，其主要具有从空位主要无缺陷区域和间隙中的至少一个区域中包括的晶体缺陷之中的尺寸为10nm至30nm的晶体缺陷主要无缺陷区域。

14. 发明授权

US08470724B2 Transparent polycrystalline material and production process for the same 有权
标题翻译：透明多晶材料和生产工艺相同
公开(公告)号：US08470724B2
公开(公告)日：2013-06-25
申请号：US13142132
申请日：2009-12-25
申请人： Takunori Taira , Jun Akiyama , Shigeo Asai , Kunihiko Hara
发明人： Takunori Taira , Jun Akiyama , Shigeo Asai , Kunihiko Hara
IPC分类号： C04B35/50
CPC分类号： H01F41/0253 , B28B1/00 , B33Y40/00 , C04B35/447 , C04B35/50 , C04B35/6455 , C04B2235/3224 , C04B2235/6027 , C04B2235/605 , C04B2235/9653 , C30B28/00 , C30B29/22 , C30B29/30 , C30B30/04 , H01S3/1603 , H01S3/1611 , H01S3/1618 , H01S3/1671 , H01S3/1673 , H01S3/1685
摘要： Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1,600-1,900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.
摘要翻译：在制备透明多晶材料时，制备悬浮液（或浆液1），悬浮液通过将原料粉末分散在溶液中而制成，原料粉末包括光学各向异性单晶颗粒，其中稀有添加了地面元素。通过在施加磁场的空间中进行滑移铸造，从悬浮液获得成形体。在这种情况下，当进行温度控制使得单晶颗粒表现出预定的磁各向异性时，根据单晶颗粒中易磁化轴的方向选择静磁场和旋转磁场之一，然后应用于它们。通过烧结成形体获得透明多晶材料，该透明多晶材料具有晶体取向被控制的多晶结构。在该烧成工序中，在1600〜1900K温度下对成型体进行一次烧结后，在1600〜1900K的温度下进行热均质压制烧结（或HIP加工）。

15. 发明授权

US08398766B2 Semiconductor wafer composed of monocrystalline silicon and method for producing it 有权
标题翻译：由单晶硅组成的半导体晶片及其制造方法
公开(公告)号：US08398766B2
公开(公告)日：2013-03-19
申请号：US12548862
申请日：2009-08-27
申请人： Timo Mueller , Gudrun Kissinger , Walter Heuwieser , Martin Weber
发明人： Timo Mueller , Gudrun Kissinger , Walter Heuwieser , Martin Weber
IPC分类号： C30B15/02
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203 , C30B15/305 , C30B30/04 , C30B33/02
摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.
摘要翻译：由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和Pv区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片具有小于10cm -2的OSF密度，至少3.5×10 8 cm -3的本体的BMD密度以及具有不大于3的波动范围BMDmax / BMDmin的BMD密度的径向分布通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

16. 发明申请

US20130014695A1 Ring-Shaped Resistance Heater For Supplying Heat To A Growing Single Crystal 有权
标题翻译：环形电阻加热器为生长单晶提供热量
公开(公告)号：US20130014695A1
公开(公告)日：2013-01-17
申请号：US13545097
申请日：2012-07-10
申请人： Dieter Knerer , Werner Schachinger
发明人： Dieter Knerer , Werner Schachinger
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B30/04 , C30B35/00 , H05B3/40 , Y10T117/1068
摘要： A ring-shaped resistance heater for supplying heat to a growing single crystal, comprising:an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of the lower ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings;connecting elements which hold the upper and lower rings together at a distance; andcurrent leads for conducting electric current through the upper and lower rings.
摘要翻译：一种环形电阻加热器，用于向生长的单晶提供热量，包括：上环和下环，其通过与所述下环的环间隙相邻的环导电连接，使得流动方向环中传导的电流在环中相反; 将上下环连接在一起的连接元件; 以及用于通过上下环导通电流的电流引线。

17. 发明申请

US20120132131A1 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR 有权
公开(公告)号：US20120132131A1
公开(公告)日：2012-05-31
申请号：US13328132
申请日：2011-12-16
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C30B15/22
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

18. 发明授权

US08172941B2 Method and device for producing semiconductor wafers of silicon 失效
标题翻译：用于制造硅半导体晶片的方法和装置
公开(公告)号：US08172941B2
公开(公告)日：2012-05-08
申请号：US12002881
申请日：2007-12-19
申请人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
发明人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203 , C30B15/30 , C30B30/04 , Y10T117/1016 , Y10T117/1032
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.
摘要翻译：硅的半导体晶片通过从包含在坩埚中的熔体中拉出单晶并从拉出的单晶切片半导体晶片来产生，在拉伸单晶期间，热量被传送到与熔体边界处的生长单晶的中心单晶，施加CUSP磁场，使得CUSP磁场的中性表面与熔体表面至少50mm的距离与单晶的牵引轴相交。因此，合适的装置包含CUSP场，其定位成使得中性场与坩埚中的晶体的轴线相距熔融表面50mm以上。

19. 发明申请

US20110260367A1 TRANSPARENT POLYCRYSTALLINE MATERIAL AND PRODUCTION PROCESS FOR THE SAME 有权
标题翻译：透明多晶材料及其生产工艺
公开(公告)号：US20110260367A1
公开(公告)日：2011-10-27
申请号：US13142132
申请日：2009-12-25
申请人： Takunori Taira , Jun Akiyama , Shigeo Asai , Kunihiko Hara
发明人： Takunori Taira , Jun Akiyama , Shigeo Asai , Kunihiko Hara
IPC分类号： B29C39/00 , C04B35/50 , C04B35/495 , C04B35/00 , C04B35/447
CPC分类号： H01F41/0253 , B28B1/00 , B33Y40/00 , C04B35/447 , C04B35/50 , C04B35/6455 , C04B2235/3224 , C04B2235/6027 , C04B2235/605 , C04B2235/9653 , C30B28/00 , C30B29/22 , C30B29/30 , C30B30/04 , H01S3/1603 , H01S3/1611 , H01S3/1618 , H01S3/1671 , H01S3/1673 , H01S3/1685
摘要： Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1,600-1,900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.
摘要翻译：在制备透明多晶材料时，制备悬浮液（或浆液1），悬浮液通过将原料粉末分散在溶液中而制成，原料粉末包括光学各向异性单晶颗粒，其中稀有添加了地面元素。通过在施加磁场的空间中进行滑移铸造，从悬浮液获得成形体。在这种情况下，当进行温度控制使得单晶颗粒表现出预定的磁各向异性时，根据单晶颗粒中易磁化轴的方向选择静磁场和旋转磁场之一，然后应用于它们。通过烧结成形体获得透明多晶材料，该透明多晶材料具有晶体取向被控制的多晶结构。在该烧成工序中，在1600〜1900K温度下对成型体进行一次烧结后，在1600〜1900K的温度下进行热均质压制烧结（或HIP加工）。

20. 发明申请

US20100126409A1 Method of Manufacturing Single Crystal 有权
标题翻译：单晶制造方法
公开(公告)号：US20100126409A1
公开(公告)日：2010-05-27
申请号：US11988295
申请日：2006-04-27
申请人： Masahiro Sakurada , Izumi Fusegawa
发明人： Masahiro Sakurada , Izumi Fusegawa
IPC分类号： C30B15/20
CPC分类号： C30B15/305 , C30B30/04
摘要： This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein ΔBr represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and ΔRc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.
摘要翻译：本发明提供了一种通过Chokralsky方法制造单晶的方法，其中施加了水平磁场，其特征在于，将单晶拉起，使得这样的放射状磁场强度梯度Dgr; Br /＆Dgr; Rc 连接磁场产生线圈（25）的中心的方向大于5.5（高斯/ mm）且不大于10（高斯/ mm），其中＆Dgr; Br表示来自原始磁场强度的磁场强度的变化量（O）作为单晶（12）与熔体表面上的坩埚的内壁（A）的固 - 液界面的中心部分，高斯; 和R d表示从熔点表面上的坩埚的原始点（O）到内壁（A）的径向距离。根据单晶的制造工序，在生长单晶时，固液界面附近的温度梯度的变化可以最小化，并且在晶体生长方向上具有期望缺陷区的高质量单晶可以容易以高产率高产率生产。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式