会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Chemical bath deposition apparatus for fabrication of semiconductor films
    • 用于制造半导体膜的化学浴沉积装置
    • US08726835B2
    • 2014-05-20
    • US13172826
    • 2011-06-30
    • Jiaxiong Wang
    • Jiaxiong Wang
    • B05B1/02B05C11/00
    • H01L31/18C23C18/02C23C18/1204C23C18/1208H01L21/02485H01L21/02521H01L21/02557H01L21/02628H01L31/0749H01L31/1828Y02E10/541Y02E10/543Y02P70/521
    • A chemical bath deposition apparatus is presented to prepare different thin films on plane substrates. In particular, it is useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This deposition apparatus deposits thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.
    • 提出了一种化学浴沉积装置,以在平面基底上制备不同的薄膜。 特别地,在制造薄膜太阳能电池中沉积CdS或ZnS缓冲层是有用的。 该沉积装置将薄膜沉积在由传送带传送的垂直行进平面工件上。 沉积这些薄膜,将反应溶液从新鲜混合的样品中连续喷射到逐渐老化的形式,直到获得设计的厚度。 将基材和溶液加热至反应温度。 在沉积工艺期间,基板的前表面完全被喷涂的溶液覆盖,但是基板的背面保持干燥。 反应器内部的反应气氛可以与外部气氛隔离。 该设备旨在为化学处理产生最少量的废物溶液。
    • 16. 发明申请
    • CHEMICAL BATH DEPOSITION METHOD FOR FABRICATION OF SEMICONDUCTOR FILMS
    • 用于制造半导体膜的化学浴沉积方法
    • US20130330874A1
    • 2013-12-12
    • US13971850
    • 2013-08-21
    • Jiaxiong Wang
    • Jiaxiong Wang
    • H01L31/18
    • H01L31/18C23C18/02C23C18/1204C23C18/1208H01L21/02485H01L21/02521H01L21/02557H01L21/02628H01L31/0749H01L31/1828Y02E10/541Y02E10/543Y02P70/521
    • A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments.
    • 提出了一种化学浴沉积方法来在平面基板上制备不同的薄膜。 特别地,它们可用于在制造薄膜太阳能电池中沉积CdS或ZnS缓冲层。 该方法和沉积装置将薄膜沉积在由输送带输送的垂直行进平面工件上。 通过将反应溶液从新鲜混合样式连续喷射到逐渐老化的形式直到获得设计的厚度来沉积薄膜。 将基材和溶液加热至反应温度。 在沉积工艺期间,基板的前表面完全被喷涂的溶液覆盖,但是基板的背面保持干燥。 反应器内部的反应气氛可以与外部气氛隔离。 该方法旨在为化学处理产生最少量的废物溶液。
    • 17. 发明申请
    • METHOD OF MANUFACTURING PATTERNED GRAPHENE FILM
    • 制作图形图形薄膜的方法
    • US20130149463A1
    • 2013-06-13
    • US13805407
    • 2012-08-09
    • Feng ZhangTianming DaiQi Yao
    • Feng ZhangTianming DaiQi Yao
    • B05D5/00
    • B05D5/00B82Y30/00B82Y40/00C01B32/184C23C18/06C23C18/1208C23C18/1279C23C18/1295G03F7/40G03F7/422
    • Embodiments of the invention provide a method of manufacturing a patterned graphene film. The method comprises the following steps: Step 1: a photoresist layer/electron-beam resist layer is coated on a substrate and patterned, the photoresist layer/electron-beam resist layer in a region for forming the patterned graphene film is removed; Step 2: a solution of oxidized graphene is coated on the substrate formed with the photoresist layer/electro-beam resist layer patterned in Step 1, so that a film of oxidized graphene is formed; Step 3: the substrate obtained in Step 2 is placed in a hydrazine steam, so that the film of oxidized graphene formed in Step 2 is reduced and a graphene film is obtained; and Step 4: the photoresist layer/electron-beam resist layer and the graphene film on the photoresist layer/electrone-beam resist layer are removed, so that the patterned graphene film is obtained.
    • 本发明的实施例提供一种制造图案化石墨烯薄膜的方法。 该方法包括以下步骤:步骤1:将光致抗蚀剂层/电子束抗蚀剂层涂覆在基板上并图案化,去除用于形成图案化石墨烯膜的区域中的光致抗蚀剂层/电子束抗蚀剂层; 步骤2:将氧化石墨烯的溶液涂布在由步骤1中图案化的光致抗蚀剂层/电子束抗蚀剂层形成的基板上,形成氧化石墨烯的膜; 步骤3:将步骤2中获得的基材置于肼蒸汽中,使步骤2中形成的氧化石墨烯的膜减少,得到石墨烯膜; 和步骤4:除去光刻胶层/电子束抗蚀剂层上的光致抗蚀剂层/电子束抗蚀剂层和石墨烯膜,从而获得图案化的石墨烯膜。