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11. 发明授权

US09752105B2 Two step method of cleaning, sanitizing, and rinsing a surface 有权
公开(公告)号：US09752105B2
公开(公告)日：2017-09-05
申请号：US14268598
申请日：2014-05-02
申请人： Ecolab USA Inc.
发明人： Jennifer Stokes , Carter M. Silvernail , Erik C. Olson , Steven J. Lange , Junzhong Li , Xin Sun , Allison Brewster , Richard Staub
IPC分类号： C11D3/48 , C11D3/04 , C11D3/08 , C11D3/10 , C11D3/36 , C11D3/39 , C11D11/00
CPC分类号： C11D3/48 , C11D3/044 , C11D3/08 , C11D3/10 , C11D3/365 , C11D3/3947 , C11D11/0064
摘要： Methods employing detergent compositions comprising phosphinosuccinic acid oligomers (PSO) in combination with a sanitizing rinse aid are disclosed. The methods beneficially clean, sanitize and rinse a surface in an efficient two-step process. The detergent compositions employ phosphinosuccinic acid adducts, namely mono-, bis- and oligomeric phosphinosuccinic acid (PSO) derivatives, in combination with an alkalinity source and optionally polymers and/or surfactants. The sanitizing and rinsing compositions employ peroxycarboxylic acid compositions in combination with a nonionic defoaming and wetting surfactant.

12. 发明授权

US09737072B2 Methods and compositions for the generation of peracetic acid on site at the point-of-use 有权
公开(公告)号：US09737072B2
公开(公告)日：2017-08-22
申请号：US15063293
申请日：2016-03-07
申请人： Enviro Tech Chemical Services, Inc.
发明人： Michael S. Harvey , Jonathan N. Howarth
IPC分类号： A61K31/19 , A01N37/16 , C11D3/39 , C11D11/00 , A01N59/00 , C11D3/395 , A01N37/12 , B01J19/24 , D06L4/15
CPC分类号： A01N37/16 , A01N37/12 , A01N59/00 , B01J19/24 , B01J2219/24 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D11/0041 , D06L4/15 , A01N37/02 , A01N2300/00
摘要： Methods for the generation of non-equilibrium solutions of peroxyacetic acid are disclosed. These methods comprise introducing triacetin and aqueous hydrogen peroxide to water, mixing, and then adding an aqueous source of an alkali metal or earth alkali metal hydroxide. Triacetin is converted rapidly and with a high conversion rate into peracetic acid. These methods produce solutions with a high level of peracetic acid.

13. 发明申请

US20170158990A1 PRECURSOR POLYELECTROLYTE COMPLEXES COMPOSITIONS 审中-公开
公开(公告)号：US20170158990A1
公开(公告)日：2017-06-08
申请号：US15433775
申请日：2017-02-15
申请人： THE CLOROX COMPANY
发明人： David R. Scheuing , THOMAS F. FAHLEN , JARED HEYMANN , MIKE KINSINGER , WILLIAM OUELLETTE , WILLIAM L. SMITH
IPC分类号： C11D3/48 , C11D3/37 , C11D3/00 , C11D3/39 , C09D5/14 , B01J45/00 , A01N33/12 , C09D133/02 , C09D139/00 , A01N25/10 , C11D3/395
CPC分类号： C09D147/00 , A01N25/10 , A01N33/12 , A01N59/00 , B01J45/00 , C09D5/14 , C09D5/1662 , C09D7/001 , C09D7/002 , C09D7/20 , C09D7/43 , C09D133/00 , C09D133/02 , C09D139/00 , C11D3/0036 , C11D3/227 , C11D3/3723 , C11D3/3757 , C11D3/3765 , C11D3/3769 , C11D3/3773 , C11D3/3776 , C11D3/378 , C11D3/3942 , C11D3/3947 , C11D3/3953 , C11D3/3956 , C11D3/48
摘要： The invention relates to compositions and methods of treatment employing compositions comprising polyelectrolyte complexes. The compositions include a water-soluble first polyelectrolyte bearing a net cationic charge or capable of developing a net cationic charge and a water-soluble second polyelectrolyte bearing a net anionic charge or capable of developing a net anionic charge. The total polyelectrolyte concentration of the first solution is at least 110 millimolar. The composition is free of coacervates, precipitates, latex particles, synthetic block copolymers, silicone copolymers, cross-linked poly(acrylic) and cross-linked water-soluble polyelectrolyte. The composition may be a concentrate, to be diluted prior to use to treat a surface.

14. 发明申请

US20170110363A1 LIQUID COMPOSITION FOR CLEANING SEMICONDUCTOR DEVICE, METHOD FOR CLEANING SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170110363A1
公开(公告)日：2017-04-20
申请号：US15290422
申请日：2016-10-11
申请人： MITSUBISHI GAS CHEMICAL COMPANY, INC.
发明人： Kimihiro AOYAMA , Nobuo TAJIMA
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , B08B3/12 , C11D3/04 , C11D3/39 , C11D3/36 , H01L21/02 , C11D11/00
CPC分类号： H01L21/76814 , B08B3/12 , C11D3/0073 , C11D3/044 , C11D3/046 , C11D3/364 , C11D3/3942 , C11D3/3947 , C11D7/06 , C11D7/10 , C11D7/36 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/02057 , H01L21/02063 , H01L23/5226 , H01L23/53238
摘要： [Problem] To provide a liquid cleaning composition for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device.[Solution] A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.

15. 发明申请

US20170107460A1 TiN Hard Mask And Etch Residual Removal 有权
公开(公告)号：US20170107460A1
公开(公告)日：2017-04-20
申请号：US15138835
申请日：2016-04-26
申请人： Air Products and Chemicals, Inc.
发明人： Wen Dar Liu , Yi-Chia Lee , William Jack Casteel, JR. , Tianniu Chen , Rajiv Krishan Agarwal , Madhukar Bhaskara Rao
IPC分类号： C11D11/00 , C11D3/43 , C11D3/30 , C11D3/20 , C11D3/33 , H01L21/02 , C11D3/00 , C11D3/37 , H01L21/311 , H01L21/033 , H01L21/768 , C11D3/39 , C11D3/28
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/33 , C11D3/3773 , C11D3/3947 , C11D3/43 , H01L21/02068 , H01L21/0332 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76865
摘要： Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

16. 发明申请

US20170092479A9 METHOD AND COMPOSITION FOR REMOVING RESIST, ETCH RESIDUE, AND COPPER OXIDE FROM SUBSTRATES HAVING COPPER, METAL HARDMASK AND LOW-K DIELECTRIC MATERIAL 审中-公开
公开(公告)号：US20170092479A9
公开(公告)日：2017-03-30
申请号：US14978110
申请日：2015-12-22
申请人： EKC TECHNOLOGY
发明人： HUA CUI
IPC分类号： H01L21/02 , C09K13/00 , C11D3/39 , C11D11/00 , H01L21/311 , C11D3/00
CPC分类号： H01L21/0206 , C09K13/00 , C11D3/0073 , C11D3/3947 , C11D3/3956 , C11D7/3281 , C11D11/0047 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134
摘要： A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.

17. 发明申请

US20170052443A1 Damage Prevention on EUV Mask 有权
标题翻译：防毒面具防损
公开(公告)号：US20170052443A1
公开(公告)日：2017-02-23
申请号：US14832099
申请日：2015-08-21
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuan-Wen Lin , Chi-Lun Lu , Ching-Wei Shen , Shu-Hsien Wu
IPC分类号： G03F1/82 , G03F7/20 , B08B3/10 , B08B3/02 , B08B3/08
CPC分类号： G03F1/82 , B08B3/02 , B08B3/08 , B08B3/10 , C11D3/3947 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/34 , C11D11/0041 , C11D11/0047 , G03F7/2004
摘要： A method of cleaning a photomask is disclosed. The method includes mixing a first chemical solution with a second chemical solution; and discharging the mixed chemical solution through an outlet of a nozzle to a surface of the photomask on which includes a ruthenium (Ru) layer, wherein the first chemical solution is configured to dislodge contaminant particles from the surface of the photomask and the second chemical solution is configured to provide an electron to the first chemical solution.
摘要翻译：公开了一种清洁光掩模的方法。该方法包括：将第一化学溶液与第二化学溶液混合; 并且将混合的化学溶液通过喷嘴的出口排出到包括钌（Ru）层的光掩模的表面，其中第一化学溶液被配置为从光掩模的表面除去污染物颗粒和第二化学溶液被配置为向第一化学溶液提供电子。

18. 发明申请

US20170018424A1 METHOD FOR CLEANING LANTHANUM GALLIUM SILICATE WAFER 审中-公开
标题翻译：用于清洁硅酸铝硅酸盐水溶液的方法
公开(公告)号：US20170018424A1
公开(公告)日：2017-01-19
申请号：US15300925
申请日：2014-04-17
申请人： Institute of Microelectronics, Chinese Academy of Sciences
发明人： Dongmei Li , Lei Zhou , Shengfa Liang , Xiaojing Li , Hao Zhang , Changqing Xie , Ming Liu
IPC分类号： H01L21/02 , B08B3/12 , C11D7/10 , C11D11/00 , C11D7/06 , C11D7/08
CPC分类号： H01L21/02082 , B08B3/12 , C11D3/3947 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , C11D11/007 , H01L21/02052
摘要： The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.
摘要翻译：本公开内容提供了一种用于清洁镓酸镓镧晶圆的方法，其包括以下步骤：在步骤1，使用由亚磷酸，过氧化氢和去离子水构成的清洁溶液来清洁硅酸镓镧镓晶圆声波; 在步骤2中，将经清洗的硅酸镓镧硅酸盐晶片通过旋转进行漂洗和干燥; 在步骤3中，使用由氨，过氧化氢和去离子水组成的清洁溶液来用兆赫声波清洗硅酸镓镧晶圆; 在步骤4中，将清洁的硅酸镓镧晶片漂洗并通过纺丝干燥; 并且在步骤5中，将经漂洗并干燥的晶片放置在烘箱中烘烤。本发明缩短了一段时间的酸性清洗工艺，延长了碱性清洗时间，并利用更频繁的清洁用兆赫声波来代替传统的超声波清洗，以解决在切割过程之后清洗硅酸镓镧晶片的问题，提高镧硅酸镓晶片的表面清洁度，以获得更好的清洁效果。

19. 发明申请

US20170002299A1 CLEANING COMPOSITION, COATINGS PREPARED THEREFROM AND METHOD OF CLEANING 审中-公开
标题翻译：清洁组合物，其制备的涂料和清洁方法
公开(公告)号：US20170002299A1
公开(公告)日：2017-01-05
申请号：US15200761
申请日：2016-07-01
申请人： Georgia-Pacific Consumer Products LP
发明人： Benjamin John Holtz , Andrew Paul Balliet , Eugene Joseph Pancheri
IPC分类号： C11D3/39 , C11D3/00 , B08B1/00 , C11D1/14 , C11D1/22 , B08B3/08 , C11D11/00 , C11D3/24
CPC分类号： C11D3/3947 , B08B1/00 , B08B3/08 , C11D1/14 , C11D1/22 , C11D3/0068 , C11D3/245 , C11D3/3765 , C11D3/3937 , C11D11/0017 , C11D11/0058
摘要： A cleaning composition includes a peroxide, an inorganic stabilizer, and a liquid carrier, and has a pH of greater than or equal to 8. Also disclosed is a coating including the cleaning composition. A method of cleaning a substrate includes applying the cleaning composition to at least a portion of a substrate in an amount effective to form a coating from the cleaning composition, and removing at least a portion of the coating from the substrate.
摘要翻译：清洁组合物包括过氧化物，无机稳定剂和液体载体，并且具有大于或等于8的pH。还公开了包含该清洁组合物的涂层。一种清洁基材的方法包括将清洁组合物施用至基材的至少一部分，其量可以有效地从清洁组合物形成涂层，并从基材中去除涂层的至少一部分。

20. 发明授权

US09533296B2 Bleach catalysts 有权
标题翻译：漂白催化剂
公开(公告)号：US09533296B2
公开(公告)日：2017-01-03
申请号：US15005288
申请日：2016-01-25
申请人： BASF SE , Henkel AG & Co. KGaA
发明人： Hauke Rohwer , Barbara Winkler , Frédérique Wendeborn , Katharina Misteli
IPC分类号： C11D3/28 , C11D3/33 , B01J31/02 , C11D3/39 , C11D3/30 , B01J31/18 , C07D295/15 , C11D3/32 , C11D7/32 , C11D7/34 , C11D11/02 , D06L3/02 , B08B3/08 , C07B33/00 , C11D3/34
CPC分类号： B01J31/0271 , B01J31/0202 , B01J31/0204 , B01J31/0218 , B01J31/0245 , B01J31/0247 , B01J31/18 , B01J2231/70 , B08B3/08 , C07B33/00 , C07D295/15 , C11D3/28 , C11D3/30 , C11D3/32 , C11D3/3481 , C11D3/349 , C11D3/3902 , C11D3/391 , C11D3/3917 , C11D3/392 , C11D3/3927 , C11D3/3942 , C11D3/3945 , C11D3/3947 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/02 , D06L4/10 , D06L4/12
摘要： The present invention relates to specific acylhydrazone compounds, their use as oxidation catalysts and to a process for removing stains and soil on textiles and hard surfaces. The compounds are substituted with a specific cyclic ammonium group adjacent to the acyl group. Further aspects of the invention are compositions or formulations comprising such compounds.
摘要翻译：本发明涉及具体的酰腙化合物，它们作为氧化催化剂的用途以及去除织物和硬表面上的污渍和污垢的方法。化合物被与酰基相邻的特定的环状铵基取代。本发明的其它方面是包含这些化合物的组合物或制剂。

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