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11. 发明授权

US09322096B2 Copper substrate for deposition of graphene 有权
标题翻译：用于沉积石墨烯的铜基底
公开(公告)号：US09322096B2
公开(公告)日：2016-04-26
申请号：US13817533
申请日：2012-05-25
申请人： Thomas A. Yager , Joshua Robinson
发明人： Thomas A. Yager , Joshua Robinson
IPC分类号： C23C16/00 , C23C16/26 , C23C16/02 , C23C16/54
CPC分类号： C01B31/0453 , C01B32/186 , C23C14/022 , C23C14/14 , C23C14/34 , C23C14/545 , C23C16/0281 , C23C16/26 , C23C16/52 , C23C16/545 , H01J37/3426 , H01J37/347 , H01J37/3476 , H01J2237/022 , H01J2237/081 , H01J2237/24578 , H01J2237/2487 , H01J2237/3323 , Y10T428/265 , Y10T428/30
摘要： Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.
摘要翻译：介绍了通过化学气相沉积（CVD）在高纯度铜表面上生长石墨烯的技术。表面可以通过使用诸如溅射，蒸发，电镀或CVD的沉积工艺在高纯度铜基底上沉积高纯度铜层来制备。高纯度铜层的沉积之后可以进行热处理以促进晶粒生长。与较低纯度的铜基底结合使用高纯度铜层可以提供热膨胀匹配，与铜蚀刻去除的相容性，或减少污染，产生较少的石墨烯缺陷，与直接沉积在较低纯度的基底上相比，费用低得多使用高纯度铜箔衬底的沉积方法。

12. 发明申请

US20160042958A1 METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE 有权
标题翻译：用于形成石墨基膜的方法，用于形成石墨的方法和用于形成石墨基膜的装置
公开(公告)号：US20160042958A1
公开(公告)日：2016-02-11
申请号：US14819038
申请日：2015-08-05
申请人： TOKYO ELECTRON LIMITED
发明人： Daisuke NISHIDE , Takashi MATSUMOTO , Munehito KAGAYA , Ryota IFUKU
IPC分类号： H01L21/285 , C23C16/52 , H01L21/67 , C23C16/18 , C23C16/26 , C23C16/46 , C23C16/455
CPC分类号： C23C16/26 , C01B31/0453 , C01B32/186 , C23C16/0218 , C23C16/0281 , C23C16/18 , C23C16/45523 , C23C16/46 , C23C16/56 , H01L21/28556 , H01L21/67103 , H01L21/68742 , H01L21/76864 , H01L21/76876 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
摘要翻译：形成石墨烯基膜的方法包括：通过使用氢气和氨气的有机金属化合物的化学气相沉积（CVD）在基板上形成作为石墨烯的基膜的金属膜; 将基板加热至除去形成的金属膜中的杂质作为气体的温度; 并将基板加热到金属膜中生长金属晶粒的温度，其中将基板加热到基板的温度达到在金属膜中生长金属晶粒的温度高于在将衬底加热时的衬底的温度作为气体除去形成的金属膜中包含的杂质的温度。

13. 发明申请

US20150197423A1 COMPOSITIONS FOR PREPARING GRAPHENE AND METHODS FOR PREPARING GRAPHENE USING THE SAME 有权
标题翻译：用于制备石墨的组合物和使用其制备石墨的方法
公开(公告)号：US20150197423A1
公开(公告)日：2015-07-16
申请号：US14669528
申请日：2015-03-26
申请人： Samsung Techwin Co., Ltd.
发明人： Yong Duck KWON , Ki Soo KIM
IPC分类号： C01B31/04 , H01B1/04
CPC分类号： C01B31/0453 , C01B32/186 , C01B32/194
摘要： A composition for preparing a graphene and a method for preparing a graphene using the same are disclosed.
摘要翻译：公开了一种用于制备石墨烯的组合物和使用其制备石墨烯的方法。

14. 发明申请

US20140183160A1 COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME 有权
标题翻译：用于生产石墨的铜箔和使用其生产石墨的方法
公开(公告)号：US20140183160A1
公开(公告)日：2014-07-03
申请号：US14122930
申请日：2012-05-31
申请人： Yoshihiro Chiba , Tatsuya Yamaji
发明人： Yoshihiro Chiba , Tatsuya Yamaji
IPC分类号： C01B31/04
CPC分类号： C01B31/0453 , B01J23/72 , B01J27/04 , B01J37/0009 , B01J37/0081 , B01J37/18 , B82Y30/00 , B82Y40/00 , C01B32/186 , C22C9/00 , C22C9/02 , C22F1/08 , Y10T428/12431
摘要： A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 μm or more having a total number of 15/mm2 or less measured by using a scanning electronic microscope before heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon.
摘要翻译：一种用于生产石墨烯的铜箔，包括氧化物和硫化物，其直径为0.5μm或更大，其总共数为15 / mm 2或更小，通过使用扫描电子显微镜在1000℃加热1小时含有20体积％以上的氢气和氩气平衡。

15. 发明申请

US20120298620A1 METHOD FOR MAKING GRAPHENE COMPOSITE STRUCTURE 有权
标题翻译：制备石墨复合结构的方法
公开(公告)号：US20120298620A1
公开(公告)日：2012-11-29
申请号：US13303361
申请日：2011-11-23
申请人： KAI-LI JIANG , XIAO-YANG LIN , LIN XIAO , SHOU-SHAN FAN
发明人： KAI-LI JIANG , XIAO-YANG LIN , LIN XIAO , SHOU-SHAN FAN
IPC分类号： H01B13/00 , B82Y40/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , H01B1/04
摘要： A method for making a graphene composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing a polymer layer on the graphene film and combining the polymer layer with the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.
摘要翻译：制造石墨烯复合结构的方法包括提供包括第一表面和与第一表面相对的第二表面的金属基底，通过CVD法在金属基底的第一表面上生长石墨烯膜，在石墨烯膜，并且将聚合物层与石墨烯膜结合，并且通过从第二表面蚀刻金属基底而形成多个剥离电极。

16. 发明申请

US20110223444A1 CRYSTALLINE SURFACE STRUCTURES AND METHODS FOR THEIR FABRICATION 审中-公开
标题翻译：晶体表面结构及其制造方法
公开(公告)号：US20110223444A1
公开(公告)日：2011-09-15
申请号：US13130023
申请日：2009-11-19
申请人： David P. Brown , Jan Von Pfaler
发明人： David P. Brown , Jan Von Pfaler
IPC分类号： B05D3/02 , C23C16/00 , B32B9/04
CPC分类号： C23C8/22 , B82Y30/00 , B82Y40/00 , C01B31/0453 , C01B32/186 , C01B2204/02 , C01B2204/04 , C01B2204/06 , C23C8/00 , C23C8/02 , C23C8/08 , C23C8/40 , C23C8/80 , H01L21/02439 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02612 , H01L21/02658
摘要： A method for fabricating crystalline surface structures (4) on a template (1). The method comprises the steps of providing a template (1) into a reaction environment, wherein one or more elements (3) required for the formation of the crystalline surface structure (4) are contained within the template (1); heating the template (1) inside the reaction environment to increase the mobility of the element (3) within the template (1), and to increase the surface diffusion length of the element (3) on the template-environment interface; and activating the template (1) by altering the conditions within the reaction environment, to make the mobile element (3) slowly migrate towards the template-environment interface and to make the element (3) organize on the surface of the template (1) as a crystalline structure (4).
摘要翻译：一种用于在模板（1）上制造结晶表面结构（4）的方法。该方法包括以下步骤：将模板（1）提供到反应环境中，其中形成晶体表面结构（4）所需的一个或多个元素（3）包含在模板（1）内; 在反应环境内加热模板（1）以增加模板（1）内的元件（3）的迁移率，并增加元件（3）在模板 - 环境界面上的表面扩散长度; 以及通过改变反应环境中的条件来激活模板（1），使得移动元件（3）缓慢地向模板 - 环境界面迁移并且使元件（3）组织在模板（1）的表面上，作为结晶结构（4）。

17. 发明授权

US09573814B2 High-throughput graphene printing and selective transfer using a localized laser heating technique 有权
标题翻译：使用局部激光加热技术的高通量石墨烯印刷和选择性转移
公开(公告)号：US09573814B2
公开(公告)日：2017-02-21
申请号：US14185350
申请日：2014-02-20
申请人： THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY
发明人： Vikram Patil , Youn-Su Kim , Kitu Kumar , Eui-Hyeok Yang
IPC分类号： H01L21/02 , C01B31/04 , H01L29/66
CPC分类号： C01B31/0453 , C01B32/186 , H01L29/66015 , Y10T156/1705
摘要： A method of high-throughput printing and selective transfer of graphene onto a substrate includes the steps of: providing a thermal release tape having graphene adhered thereto; placing a substrate onto the graphene; pressing the thermal tape and the graphene against the substrate at a uniformly-distributed pressure; heating localized portions of the thermal tape and graphene using a localized heat source, thereby diminishing the adhesive properties of the thermal release tape in the localized portions and transferring graphene from said localized portions to the substrate; and separating the thermal release tape from the substrate. The method may include the further step of moving the localized heat source to selected positions on the thermal release tape during the heating step, thereby forming a pattern of heated portions. The method may use a laser beam as the localized heat source, movement of the laser beam being performed by a computer-controlled deflectable mirror.
摘要翻译：将高通量打印和石墨烯选择性转移到基板上的方法包括以下步骤：提供具有粘附在其上的石墨烯的热释放带; 将衬底放置在石墨烯上; 以均匀分布的压力将热敏胶带和石墨烯压在基材上; 使用局部热源加热热带和石墨烯的局部部分，从而减小局部部分中的热释放带的粘合性能，并将石墨烯从所述局部部分转移到基底; 以及将热释放带与基底分离。该方法可以包括在加热步骤期间将局部热源移动到热释放带上的选定位置的步骤，从而形成加热部分的图案。该方法可以使用激光束作为局部热源，由计算机控制的可偏转镜执行激光束的移动。

18. 发明授权

US09394599B2 Crystalline surface structures and methods for their fabrication 有权
标题翻译：结晶表面结构及其制造方法
公开(公告)号：US09394599B2
公开(公告)日：2016-07-19
申请号：US13130023
申请日：2009-11-19
申请人： David P. Brown , Jan Von Pfaler
发明人： David P. Brown , Jan Von Pfaler
IPC分类号： C01B31/00 , C23C8/22 , B82Y30/00 , B82Y40/00 , C01B31/04 , C23C8/00 , C23C8/02 , C23C8/08 , C23C8/40 , C23C8/80 , H01L21/02
CPC分类号： C23C8/22 , B82Y30/00 , B82Y40/00 , C01B31/0453 , C01B32/186 , C01B2204/02 , C01B2204/04 , C01B2204/06 , C23C8/00 , C23C8/02 , C23C8/08 , C23C8/40 , C23C8/80 , H01L21/02439 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02612 , H01L21/02658
摘要： A method for fabricating crystalline surface structures (4) on a template (1). The method comprises the steps of providing a template (1) into a reaction environment, wherein one or more elements (3) required for the formation of the crystalline surface structure (4) are contained within the template (1); heating the template (1) inside the reaction environment to increase the mobility of the element (3) within the template (1), and to increase the surface diffusion length of the element (3) on the template-environment interface; and activating the template (1) by altering the conditions within the reaction environment, to make the mobile element (3) slowly migrate towards the template-environment interface and to make the element (3) organize on the surface of the template (1) as a crystalline structure (4).
摘要翻译：一种用于在模板（1）上制造结晶表面结构（4）的方法。该方法包括以下步骤：将模板（1）提供到反应环境中，其中形成晶体表面结构（4）所需的一个或多个元素（3）包含在模板（1）内; 在反应环境内加热模板（1）以增加模板（1）内的元件（3）的迁移率，并增加元件（3）在模板 - 环境界面上的表面扩散长度; 以及通过改变反应环境中的条件来激活模板（1），使得移动元件（3）缓慢地向模板 - 环境界面迁移并且使元件（3）组织在模板（1）的表面上，作为结晶结构（4）。

19. 发明授权

US09327983B2 Compositions for preparing graphene and methods for preparing graphene using the same 有权
标题翻译：用于制备石墨烯的组合物和使用其制备石墨烯的方法
公开(公告)号：US09327983B2
公开(公告)日：2016-05-03
申请号：US14669528
申请日：2015-03-26
申请人： Hanwha Techwin Co., Ltd.
发明人： Yong Duck Kwon , Ki Soo Kim
IPC分类号： H01B1/04 , C01B31/04 , B82Y40/00
CPC分类号： C01B31/0453 , C01B32/186 , C01B32/194
摘要： A composition for preparing a graphene and a method for preparing a graphene using the same are disclosed.
摘要翻译：公开了一种用于制备石墨烯的组合物和使用其制备石墨烯的方法。

20. 发明授权

US09272910B2 Methods of nondestructively delaminating graphene from a metal substrate 有权
标题翻译：从金属基材非破坏性地分层石墨烯的方法
公开(公告)号：US09272910B2
公开(公告)日：2016-03-01
申请号：US14344040
申请日：2012-09-04
申请人： Kian Ping Loh , Yu Wang
发明人： Kian Ping Loh , Yu Wang
IPC分类号： C25F5/00 , C01B31/04 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/19 , C01B32/194 , C25F5/00 , Y02E60/366
摘要： Methods of delaminating a graphene film (60) from a metal substrate (50) are disclosed that substantially preserve the metal substrate. The methods include forming a support layer (80) on the graphene film and then performing an electrochemical process in an electrochemical apparatus (10). The electrochemical process creates gas bubbles (36) at the metal-film interface (64), thereby causing the delamination. The graphene film and support layer form a structure (86) that is collected by a take-up roller (120). The support layer and graphene structure are then separated to obtain the graphene film.
摘要翻译：公开了从金属基板（50）分离石墨烯膜（60）的方法，其基本上保持金属基板。所述方法包括在石墨烯膜上形成支撑层（80），然后在电化学装置（10）中进行电化学处理。电化学过程在金属 - 膜界面（64）处产生气泡（36），从而引起分层。石墨烯膜和支撑层形成由卷取辊（120）收集的结构（86）。然后分离支撑层和石墨烯结构以获得石墨烯膜。

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