会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Processing agent composition for semiconductor surface and method for processing semiconductor surface using same
    • 用于半导体表面的加工剂组合物和使用其的半导体表面的处理方法
    • US09034810B2
    • 2015-05-19
    • US13393981
    • 2010-09-01
    • Hironori MizutaTakuhiro Kimura
    • Hironori MizutaTakuhiro Kimura
    • C11D3/60G03F7/42H01L21/311C11D11/00
    • G03F7/425C11D11/0047G03F7/423G03F7/426H01L21/31133
    • The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent; composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent; , [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).
    • 本发明旨在提供一种半导体表面处理剂; 能够容易且短时间地在半导体装置等的制造工序中剥离防反射涂层,抗蚀剂层和固化的抗蚀剂层的组合物以及半导体表面的处理方法 包括使用该组合物。 本发明涉及半导体表面处理剂; 组合物,其包含[I]在水中产生氟离子的化合物,[II]碳自由基发生剂; ,[III]水,[IV]有机溶剂和[V]至少一种选自羟胺和由通式[1]表示的羟胺衍生物的化合物,以及一种治疗方法 该半导体表面包括使用该组合物:(其中R1表示直链,支链或环状C 1-6烷基或具有1-3个羟基的直链或支链C 1-4取代的烷基; R 2表示氢原子 直链,支链或环状C 1-6烷基,或具有1-3个羟基的直链或支链C 1-4取代的烷基)。
    • 13. 发明申请
    • METHOD FOR PRODUCING CYCLIC SULFONIC ACID ESTER AND INTERMEDIATE THEREOF
    • 生产环磷酸酯及其中间体的方法
    • US20140142324A1
    • 2014-05-22
    • US14163682
    • 2014-01-24
    • WAKO PURE CHEMICAL INDUSTRIES, LTD.
    • Ayako KURAMOTOKuniaki OKAMOTOTsutomu WATAHIKIMotoshige SUMINO
    • C07D327/04
    • C07D327/04C07D327/10
    • The present invention is directed to provide an efficient production method which is capable of not only obtaining a cyclic sulfonic acid ester (sultone) at low cost and in high yield, but also the sulfonic acid ester (sultone) stably even in a commercial scale. The present invention relates to a method for producing hydroxysultone comprising a first step where a diol having a specified structure and a thionyl halide are reacted to obtain a cyclic sulfite having a specified structure, and a second step where the cyclic sulfite is reacted with water or/and alcohol; a method for producing an unsaturated sultone having a specified structure comprising a third step where a hydroxylsultone having a specified structure is reacted with an acid halide or an acid anhydride to obtain an intermediate, subsequently the intermediate is treated with a base; as well as a cyclic sulfite having a specified structure.
    • 本发明的目的在于提供一种能够以低成本,高收率地获得环状磺酸酯(磺内酯),而且能够以工业规模稳定地获得磺酸酯(磺内酯)的有效的制造方法。 本发明涉及一种生产羟基培养基的方法,包括第一步骤,其中具有特定结构的二醇和亚硫酰卤反应得到具有特定结构的环状亚硫酸盐,第二步是将环状亚硫酸盐与水或 /和酒精; 一种具有特定结构的不饱和磺内酯的制造方法,其特征在于,具有将具有规定结构的羟基磺内酯与酰卤或酸酐反应得到中间体的第3工序,接着用碱处理中间体; 以及具有特定结构的环状亚硫酸盐。
    • 17. 发明授权
    • Ionic liquid containing allylsulfonate anion
    • 含有烯丙基磺酸盐阴离子的离子液体
    • US08546609B2
    • 2013-10-01
    • US13393144
    • 2010-08-30
    • Tsutomu WatahikiKuniaki OkamotoMotoshige Sumino
    • Tsutomu WatahikiKuniaki OkamotoMotoshige Sumino
    • C07C313/00
    • C07C309/20C07D213/06C07D213/20C07D213/68C07D233/58C07D295/04C07D295/08
    • Problem:Providing a novel ionic liquid, which is low-cost, environment-friendly, and has low viscosity and melting point.Means for Solving the Problem:The present invention is the invention of the ionic liquid represented by the general formula [1]: {wherein, R1 to R3 and n pieces of R4 each independently represent hydrogen atom or alkyl group having 1 to 4 carbon atoms, R5 to R7 each independently represent alkyl group, aralkyl group, or aryl group, R8 represents alkyl group, aralkyl group, aryl group, or the one represented by the general formula [2]: (wherein T represents alkylene chain having 1 to 8 carbon atoms, n represents 1 or 2, and R1 to R7 are the same as the above-described), X represents nitrogen atom or phosphorus atom, n represents 1 or 2. When n is 1, R3 and R4 are bound and may form cyclohexene ring together with the adjacent carbon atoms. In addition, when X is nitrogen atom, R5 to R7 or R5 to R6 may form hetero ring with nitrogen atom binding thereto}.
    • 问题:提供一种低成本,环保的新型离子液体,具有低粘度和熔点。 解决问题的手段:本发明是由通式[1]表示的离子液体的发明:{其中,R 1〜R 3和n个R 4各自独立地表示氢原子或碳原子数1〜4的烷基 R 5〜R 7各自独立地表示烷基,芳烷基或芳基,R 8表示烷基,芳烷基,芳基或由通式[2]表示的基团:(其中,T表示1〜8的亚烷基链 碳原子,n表示1或2,并且R 1至R 7与上述相同),X表示氮原子或磷原子,n表示1或2.当n为1时,R 3和R 4结合并形成 环己烯环与相邻的碳原子一起环。 此外,当X是氮原子时,R 5至R 7或R 5至R 6可以与与其结合的氮原子形成杂环}。
    • 20. 发明申请
    • PROCESSING AGENT COMPOSITION FOR SEMICONDUCTOR SURFACE AND METHOD FOR PROCESSING SEMICONDUCTOR SURFACE USING SAME
    • 用于半导体表面的处理剂组合物和使用其处理半导体表面的方法
    • US20120157368A1
    • 2012-06-21
    • US13393981
    • 2010-09-01
    • Hironori MizutaTakuhiro Kimura
    • Hironori MizutaTakuhiro Kimura
    • G03F7/42
    • G03F7/425C11D11/0047G03F7/423G03F7/426H01L21/31133
    • The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent, [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).
    • 本发明的目的在于提供一种半导体表面处理剂组合物,该半导体表面处理剂组合物能够容易且简便地在半导体器件等的制造过程中剥离抗反射涂层,抗蚀剂层和固化的抗蚀剂层 时间,以及用于处理半导体表面的方法,包括使用该组合物。 本发明涉及一种半导体表面处理剂组合物,其包含[I]在水中产生氟离子的化合物,[II]碳自由基产生剂,[III]水,[IV]有机溶剂和[V] 选自羟胺和由通式[1]表示的羟胺衍生物的至少一种化合物以及用于处理半导体表面的方法,包括使用该组合物:(其中R1表示直链 ,支链或环状C 1-6烷基,或具有1-3个羟基的直链或支链C 1-4取代的烷基; R 2表示氢原子,直链,支链或环状C 1-6烷基,或直链或支链 具有1〜3个羟基的支链C 1-4取代烷基)。