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11. 发明授权

US08736728B2 Image sensor with controllable vertically integrated photodetectors 有权
标题翻译：具有可控垂直集成光电检测器的图像传感器
公开(公告)号：US08736728B2
公开(公告)日：2014-05-27
申请号：US13193677
申请日：2011-07-29
申请人： John P. McCarten , Robert Michael Guidash
发明人： John P. McCarten , Robert Michael Guidash
IPC分类号： H04N3/14 , H01L21/00 , H01L31/062
CPC分类号： H01L27/1461 , H01L27/14621 , H01L27/14647 , H01L27/14656
摘要： An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
摘要翻译：图像传感器包括设置在第一导电类型的衬底层中的第一导电类型的前侧和后侧光电检测器。第二导电类型的前侧钉扎层连接到第一触点。第一个触点接收到预定的电位。第二导电类型的背面钉扎层连接到第二触点。第二个触点接收可调节和可编程的电位。

12. 发明授权

US08728722B2 Stitching methods using multiple microlithographic expose tools 有权
标题翻译：使用多个微光刻曝光工具的缝合方法
公开(公告)号：US08728722B2
公开(公告)日：2014-05-20
申请号：US13196163
申请日：2011-08-02
申请人： Robert P. Fabinski , Eric J. Meisenzahl , James E. Doran , Joseph R. Summa
发明人： Robert P. Fabinski , Eric J. Meisenzahl , James E. Doran , Joseph R. Summa
IPC分类号： G03C5/06
CPC分类号： G03F7/70475 , G03F7/70466 , G03F7/70633
摘要： A method for producing a device in one or more layers of patternable material disposed over a substrate uses multiple exposure tools having different resolution limits and maximum expose field sizes. An abutting field pattern is exposed and stitched in one layer of patternable material using one exposure tool and a first mask. A periphery pattern is then exposed in the same layer or in a different layer of patternable material using a second exposure tool and a second mask. The maximum expose field of the first exposure tool is smaller than a size of the device while the maximum expose field of the second exposure tool is at least as large as, or larger, the size of the device so that the combination of the stitched abutting field pattern and the periphery pattern forms a complete pattern in the patternable material.
摘要翻译：一种用于制造设置在衬底上的一层或多层可图案材料中的器件的方法使用具有不同分辨率极限和最大曝光场尺寸的多个曝光工具。使用一个曝光工具和第一掩模将邻接的场图案曝光并缝合在一层可图案材料中。然后使用第二曝光工具和第二掩模将外围图案暴露在同一层或不同的可图案材料层中。第一曝光工具的最大曝光场小于装置的尺寸，而第二曝光工具的最大曝光场至少等于或大于装置的尺寸，使得缝合邻接的组合场图案和周边图案在可图案材料中形成完整图案。

13. 发明授权

US08481358B2 CCD sensors with multiple contact patterns 有权
标题翻译：具有多种触点图案的CCD传感器
公开(公告)号：US08481358B2
公开(公告)日：2013-07-09
申请号：US12845837
申请日：2010-07-29
申请人： Shen Wang
发明人： Shen Wang
IPC分类号： H01L21/00 , H01L27/148 , H01L29/765
CPC分类号： H01L27/14812 , H01L27/14843
摘要： A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can operate as vertical shift registers. The pixels are divided into blocks of pixels. One or more electrodes are disposed over each pixel. Conductive strips are disposed over the electrodes. Contacts are used to connect selected electrodes to respective conductive strips. The contacts in at least one block of pixels are positioned according to one contact pattern while the contacts in one or more other blocks are positioned according to a different contact pattern. The different contact patterns reduce or eliminate visible patterns in the contact locations.
摘要翻译：图像传感器中的像素阵列包括多个像素。像素阵列包括用于将电荷从像素阵列移出的垂直移位寄存器。垂直移位寄存器可以分散在像素之间，例如在行间图像传感器中，或者像素中的光敏区域可以作为垂直移位寄存器操作。像素被划分成像素块。一个或多个电极设置在每个像素上。导电条布置在电极上。触点用于将所选择的电极连接到相应的导电条。至少一个像素块中的触点根据一个触点图案定位，同时一个或多个其他块中的触点根据不同的触点图案定位。不同的接触图形减少或消除接触位置中的可见图案。

14. 发明授权

US08415813B2 Identification of dies on a semiconductor wafer 有权
公开(公告)号：US08415813B2
公开(公告)日：2013-04-09
申请号：US13160885
申请日：2011-06-15
申请人： Shen Wang , Robert P. Fabinski , James E. Doran , Laurel J. Pace , Eric J. Meisenzahl
发明人： Shen Wang , Robert P. Fabinski , James E. Doran , Laurel J. Pace , Eric J. Meisenzahl
IPC分类号： H01L21/66
CPC分类号： H01L23/544 , H01L2223/5442 , H01L2223/54433 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.

15. 发明授权

US08415175B2 Identification of dies on a semiconductor wafer 有权
标题翻译：识别半导体晶片上的裸片
公开(公告)号：US08415175B2
公开(公告)日：2013-04-09
申请号：US13160901
申请日：2011-06-15
申请人： Shen Wang , Robert P. Fabinski , James E. Doran , Laurel J. Pace , Eric J. Meisenzahl
发明人： Shen Wang , Robert P. Fabinski , James E. Doran , Laurel J. Pace , Eric J. Meisenzahl
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L23/544 , H01L2223/54433 , H01L2223/5448 , H01L2924/0002 , Y10T83/0524 , Y10T83/7809 , H01L2924/00
摘要： A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations in the die identification region specifying a location of a respective die on the wafer.
摘要翻译：半导体晶片包括多个管芯和与每个管芯相邻或在其上的管芯识别区域。管芯识别区域可以包括晶片指示器和表示晶片上晶片位置的管芯位置的图案。在芯片识别区域中的芯片位置的每个图案中提供芯片识别标记，其指定晶片上相应裸片的位置。

16. 发明授权

US08314873B2 Methods for capturing and reading out images from an image sensor 有权
公开(公告)号：US08314873B2
公开(公告)日：2012-11-20
申请号：US12570014
申请日：2009-09-30
申请人： John N. Border , John T. Compton , David N. Nichols
发明人： John N. Border , John T. Compton , David N. Nichols
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/235 , H04N5/347 , H04N5/353 , H04N5/35527 , H04N5/35545 , H04N5/35581 , H04N5/37213 , H04N5/3728
摘要： Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

17. 发明授权

US08279316B2 Methods for capturing and reading out images from an image sensor 有权
公开(公告)号：US08279316B2
公开(公告)日：2012-10-02
申请号：US12570053
申请日：2009-09-30
申请人： John N. Border , John T. Compton , David N. Nichols
发明人： John N. Border , John T. Compton , David N. Nichols
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/35554 , H04N5/35581 , H04N5/3728 , H04N9/045
摘要： Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

18. 发明授权

US08149303B2 Methods for capturing and reading out images from an image sensor 有权
公开(公告)号：US08149303B2
公开(公告)日：2012-04-03
申请号：US12570062
申请日：2009-09-30
申请人： John N. Border , John T. Compton , David N. Nichols
发明人： John N. Border , John T. Compton , David N. Nichols
IPC分类号： H04N9/64
CPC分类号： H04N5/3728 , H04N5/235 , H04N5/347 , H04N5/353 , H04N5/35527 , H04N5/35545 , H04N5/35581 , H04N5/37213
摘要： Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

19. 发明授权

US08134630B2 System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains 有权
标题翻译：用于从具有复位漏极的图像传感器中的电荷耦合器件（CCD）移位寄存器中排出剩余电荷的系统和方法
公开(公告)号：US08134630B2
公开(公告)日：2012-03-13
申请号：US12118131
申请日：2008-05-09
申请人： Eric J. Meisenzahl
发明人： Eric J. Meisenzahl
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14887 , H04N5/3597 , H04N5/37213
摘要： One or more charge storage regions in a charge-coupled device (CCD) shift register can contain residual charge that did not transfer to a reset drain during a reset operation. An image sensor drains the residual charge from each charge storage region by shifting the residual charge to an adjacent charge storage region and resetting the CCD shift register one more time. The process of resetting the CCD shift register, shifting the residual non-image charge to an adjacent charge storage region, and resetting the CCD shift register again can be repeated any number of times.
摘要翻译：电荷耦合器件（CCD）移位寄存器中的一个或多个电荷存储区可以包含在复位操作期间没有转移到复位漏极的残留电荷。图像传感器通过将剩余电荷移动到相邻的电荷存储区域并再次重新设置CCD移位寄存器来从每个电荷存储区域排出剩余电荷。复位CCD移位寄存器，将残留的非图像电荷移位到相邻电荷存储区域，并重新复位CCD移位寄存器的过程可以重复任意次数。

20. 发明申请

US20140191355A1 IMAGE SENSORS WITH MULTIPLE OUTPUT STRUCTURES 有权
标题翻译：具有多个输出结构的图像传感器
公开(公告)号：US20140191355A1
公开(公告)日：2014-07-10
申请号：US13735542
申请日：2013-01-07
申请人： Truesense Imaging, Inc.
发明人： Shen Wang
IPC分类号： H01L27/148
CPC分类号： H01L27/14868 , H01L27/14806 , H01L27/14812 , H01L27/14831 , H01L27/14843 , H01L29/76816
摘要： In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.
摘要翻译：在各种实施例中，图像传感器通过包括多个子阵列并入多个输出结构，其中至少一个包括有源像素的区域，被扇形和/或倾斜的暗像素区域，未示出和未被隐藏的暗像素区域，水平CCD，以及用于将电荷转换成电压的输出结构。

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