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11. 发明授权

US08652393B2 Strain and kinetics control during separation phase of imprint process 有权
标题翻译：压印过程分离阶段的应变和动力学控制
公开(公告)号：US08652393B2
公开(公告)日：2014-02-18
申请号：US12604517
申请日：2009-10-23
申请人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung-Jin Choi
发明人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung-Jin Choi
IPC分类号： B29C45/76
CPC分类号： B29C37/0003 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.
摘要翻译：描述了在压印光刻工艺的分离过程期间改进鲁棒层分离的系统和方法。包括在待印刷的基底与模板之间匹配应变的方法，改变或改变在分离期间施加到模板和/或基底的力，或改变或改变分离过程的动力学。

12. 发明授权

US08637587B2 Release agent partition control in imprint lithography 有权
标题翻译：印版光刻中的脱模剂分区控制
公开(公告)号：US08637587B2
公开(公告)日：2014-01-28
申请号：US13226635
申请日：2011-09-07
申请人： Frank Y. Xu , Weijun Liu
发明人： Frank Y. Xu , Weijun Liu
IPC分类号： C08F2/50
CPC分类号： C07D237/24 , B82Y10/00 , B82Y40/00 , C07C233/18 , G03F7/0002
摘要： Release agents with increased affinity toward nano-imprint lithography template surfaces interact strongly with the template during separation of the template from the solidified resist in a nano-imprint lithography process. The strong interaction between the surfactant and the template surface reduces the amount of surfactant pulled off the template surface during separation of a patterned layer from the template in an imprint lithography cycle. Maintaining more surfactant associated with the surface of the template after the separation of the patterned layer from the template may reduce the amount of surfactant needed in a liquid resist to achieve suitable release of the solidified resist from the template during an imprint lithography process. Strong association of the release agent with the surface of the template facilitates the formation of ultra-thin residual layers and dense fine features in nano-imprint lithography.
摘要翻译：在纳米压印光刻工艺中将模板与固化的抗蚀剂分离期间，与纳米压印光刻模板表面的亲和性增加的脱模剂与模板相互作用强烈。表面活性剂和模板表面之间的强相互作用减少了在压印光刻循环中将图案化层与模板分离期间从模板表面上拉出的表面活性剂的量。在将图案化层与模板分离之后，维持与模板表面相关的更多表面活性剂可以减少液体抗蚀剂中所需的表面活性剂的量，以在压印光刻过程中从模板中实现固化的抗蚀剂的合适释放。脱模剂与模板表面的强相关有助于在纳米压印光刻中形成超薄的残余层和致密的精细特征。

13. 发明申请

US20140021167A1 Large Area Patterning of Nano-Sized Shapes 审中-公开
标题翻译：纳米尺寸形状的大面积图案
公开(公告)号：US20140021167A1
公开(公告)日：2014-01-23
申请号：US14021463
申请日：2013-09-09
申请人： Board of Regents, The University of Texas System , Molecular Imprints, Inc.
发明人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译：描述了形成纳米形图案的方法。该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。

14. 发明授权

US08616873B2 Micro-conformal templates for nanoimprint lithography 有权
标题翻译：用于纳米压印光刻的微型适形模板
公开(公告)号：US08616873B2
公开(公告)日：2013-12-31
申请号：US13014354
申请日：2011-01-26
申请人： Michael N. Miller , Frank Y. Xu , Nicholas A. Stacey
发明人： Michael N. Miller , Frank Y. Xu , Nicholas A. Stacey
IPC分类号： B28B7/36 , B29C59/00 , B29C59/16 , B29C33/38
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A micro-conformal nanoimprint lithography template includes a backing layer and a nanopatterned layer adhered to the backing layer. The elastic modulus of the backing layer exceeds the elastic modulus of the nanopatterned layer. The micro-conformal nanoimprint lithography template can be used to form a patterned layer from an imprint resist on a substrate, the substrate having a micron-scale defect, such that an excluded distance from an exterior surface of the micron-scale defect to the patterned layer formed by the nanoimprint lithography template is less than a height of the defect. The nanoimprint lithography template can be used to form multiple imprints with no reduction in feature fidelity.
摘要翻译：微型共形纳米压印光刻模板包括背衬层和粘附到背衬层的纳米图案化层。背衬层的弹性模量超过纳米图案层的弹性模量。微型共形纳米压印光刻模板可以用于从基底上的抗蚀刻剂形成图案化层，该衬底具有微米级缺陷，使得从微米级缺陷的外表面到图案化的排除距离由纳米压印光刻模板形成的层小于缺陷的高度。纳米压印光刻模板可以用于形成多个压印，而不会降低特征保真度。

15. 发明授权

US08541053B2 Enhanced densification of silicon oxide layers 有权
标题翻译：增强氧化硅层的致密化
公开(公告)号：US08541053B2
公开(公告)日：2013-09-24
申请号：US13178057
申请日：2011-07-07
申请人： Marlon Menezes , Frank Y. Xu , Fen Wan
发明人： Marlon Menezes , Frank Y. Xu , Fen Wan
IPC分类号： B05D3/02 , B05D3/04 , B32B3/26
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/3105 , Y10T428/249953
摘要： Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.
摘要翻译：致密化多层基板包括在基板的表面上提供具有第一介电层的基板。第一介电层包括多个孔。将水引入第一介电层的孔中以形成含水介电层。在含水的第一介电层的表面上设置有第二介质层。第一和第二电介质层在600℃或更低的温度下退火。在一个实例中，多层衬底是纳米压印光刻模板。第二电介质层可以具有与热氧化物类似的密度，因此蚀刻速率可能仍然足够多孔以允许氦比热氧化物层更快速地扩散。

16. 发明授权

US08529778B2 Large area patterning of nano-sized shapes 有权
标题翻译：纳米尺寸形状的大面积图案
公开(公告)号：US08529778B2
公开(公告)日：2013-09-10
申请号：US12616896
申请日：2009-11-12
申请人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
发明人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
IPC分类号： B44C1/22
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译：描述了形成纳米形图案的方法。该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。

17. 发明授权

US08415010B2 Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers 有权
标题翻译：具有增强的含硅层和非含硅层之间的粘附性的纳米压印光刻堆叠
公开(公告)号：US08415010B2
公开(公告)日：2013-04-09
申请号：US12581634
申请日：2009-10-19
申请人： Weijun Liu , Frank Y. Xu
发明人： Weijun Liu , Frank Y. Xu
IPC分类号： B32B27/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/027 , G03F7/0382 , G03F7/0757 , Y10T428/265 , Y10T428/31667
摘要： A nano-imprint lithography stack includes a nano-imprint lithography substrate, a non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, and a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the non-silicon-containing layer. The non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate. The silicon-containing layer includes a silsesquioxane with a general formula (R′(4-2z)SiOz)x(HOSiO1.5)y, wherein R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl, 1
摘要翻译：纳米压印光刻堆叠包括纳米压印光刻基板，从第一可聚合的非含硅组合物固化的非含硅层和从可聚合的含硅组合物固化的含硅层，所述可聚合的含硅组合物粘附到非含硅层的表面。非含硅层直接或通过一个或多个中间层粘附到纳米压印光刻基片上。含硅层包括具有通式（R'（4-2z）SiO z）x（HOSiO 1.5）y的倍半硅氧烷，其中R'是烃基或两个或更多个不同于甲基的不同烃基， z <2，x和y是整数。压印光刻叠层可以进一步包括第二非含硅层，其从粘附到含硅层的表面的第二可聚合非含硅组合物固化，使得含硅层被夹在非晶硅层之间，含硅层。

18. 发明授权

US08361546B2 Facilitating adhesion between substrate and patterned layer 有权
标题翻译：促进基材和图案层之间的粘附
公开(公告)号：US08361546B2
公开(公告)日：2013-01-29
申请号：US12606588
申请日：2009-10-27
申请人： Edward B. Fletcher , Zhengmao Ye , Dwayne L. LaBrake , Frank Y. Xu
发明人： Edward B. Fletcher , Zhengmao Ye , Dwayne L. LaBrake , Frank Y. Xu
IPC分类号： B05D5/10
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01J37/32431 , Y10T428/30 , Y10T428/31663
摘要： Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate.
摘要翻译：描述了将基板粘合到图案层上的系统和方法。包括基材的原位清洁和调理，以及在基材和图案化层之间施加粘合层，以及在粘合材料和基材之间形成中间层。

19. 发明授权

US08237133B2 Energy sources for curing in an imprint lithography system 有权
标题翻译：在压印光刻系统中固化的能源
公开(公告)号：US08237133B2
公开(公告)日：2012-08-07
申请号：US12511593
申请日：2009-07-29
申请人： Mahadevan Ganapathisubramanian , Byung-Jin Choi , Liang Wang , Alex Ruiz
发明人： Mahadevan Ganapathisubramanian , Byung-Jin Choi , Liang Wang , Alex Ruiz
IPC分类号： G21K5/00
CPC分类号： G03F9/7042 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/20 , G03F9/7088
摘要： Energy sources and methods for curing in an imprint lithography system are described. The energy sources may include one or more energy elements positioned outside of the viewing range of an imaging unit monitoring elements of the imprint lithography system. Each energy source is configured to provide energy along a path to solidify polymerizable material on a substrate.
摘要翻译：描述了在压印光刻系统中固化的能量源和方法。能量源可以包括位于压印光刻系统的成像单元监视元件的观看范围之外的一个或多个能量元件。每个能量源被配置为沿着路径提供能量以固化基底上的可聚合材料。

20. 发明申请

US20120187085A1 CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION 有权
标题翻译：模式形成过程中的关键尺寸控制
公开(公告)号：US20120187085A1
公开(公告)日：2012-07-26
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译：可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。残余层的厚度可以与特征的临界尺寸成正比或成反比。分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。

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