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11. 发明授权

US07115026B2 Polishing apparatus 有权
标题翻译：抛光设备
公开(公告)号：US07115026B2
公开(公告)日：2006-10-03
申请号：US11201307
申请日：2005-08-11
申请人： Makoto Nakajima , Yoshio Nakamura , Tadakazu Miyashita
发明人： Makoto Nakajima , Yoshio Nakamura , Tadakazu Miyashita
IPC分类号： B24B7/22
CPC分类号： B24B37/08 , B24B41/007
摘要： An upper polishing plate is moved downward until facing a lower polishing plate to polish a work piece. The upper polishing plate is rotated in a horizontal plane together with a first elastic member, a second elastic member, an outer member and a connecting member. A pressure difference between a first pressing force pressing the outer member or an inner member upward and a second pressing force pressing the outer member or the inner member downward, which is produced in a first closed space by supplying a compressed fluid into and discharging the same from the first closed space, is adjusted, so that a third pressing force of the upper polishing plate, which presses a work piece, can be adjusted.
摘要翻译：上抛光板向下移动直到面向下抛光板以抛光工件。上部抛光板与第一弹性构件，第二弹性构件，外部构件和连接构件一起在水平面中旋转。通过将压缩流体供给到其中并在其中排出而在第一封闭空间中产生的压缩外部构件或内部构件向上的第一按压力与第二按压力之间的压力差从第一封闭空间被调节，从而能够调节按压工件的上部抛光板的第三按压力。

12. 发明申请

US20060112547A1 Method of manufacturing connectors 失效
标题翻译：制造连接器的方法
公开(公告)号：US20060112547A1
公开(公告)日：2006-06-01
申请号：US11289734
申请日：2005-11-29
申请人： Yoshio Nakamura
发明人： Yoshio Nakamura
IPC分类号： H01R13/648 , H01K3/22
CPC分类号： H01R43/24 , Y10T29/49121 , Y10T29/49158 , Y10T29/49172 , Y10T29/49204 , Y10T29/49218 , Y10T29/49222
摘要： A method for manufacturing connectors comprises providing a carrier strip with a plurality of first alignment apertures and a plurality of contacts arranged in a row. The carrier strip is cut to desired lengths to form contact band pieces. The first alignment apertures are engaged with first protrusions on a carrier tape to mount each of the contact band pieces to the carrier tape. The first protrusions have a smaller outer diameter than an inner diameter of the first alignment apertures such that there is slight play there between. Resin is insert molded around the rows of the contacts to form a housing. The contacts are then cut from the carrier strip.
摘要翻译：一种用于制造连接器的方法包括：提供带有多个第一对准孔和一排布置成一排的多个触点的承载带。将载体条切割成所需长度以形成接触片段。第一对准孔与承载带上的第一突起接合，以将每个接触带片安装到载带上。第一突起具有比第一对准孔的内径小的外径，使得其间有轻微的间隙。树脂被插入模制在触头的行的周围以形成壳体。然后从载体条切割触点。

13. 发明申请

US20050028843A1 Method of cleaning abrasive plates of abrasive machine and cleaning device 审中-公开
公开(公告)号：US20050028843A1
公开(公告)日：2005-02-10
申请号：US10937685
申请日：2004-09-09
申请人： Yasuhide Denda , Yoshio Nakamura , Yoshinobu Nishimoto , Makoto Nakajima , Tsuyoshi Hasegawa , Norihiko Moriya
发明人： Yasuhide Denda , Yoshio Nakamura , Yoshinobu Nishimoto , Makoto Nakajima , Tsuyoshi Hasegawa , Norihiko Moriya
IPC分类号： B08B3/02 , B08B15/04 , B24B37/08 , B24B53/007 , B24B53/017 , B24B49/00
CPC分类号： B24B37/08 , B08B3/024 , B08B15/04 , B08B2203/0229 , B24B53/017 , Y10S134/902
摘要： The method of the present invention cleans abrasive faces of an upper abrasive plate and a lower abrasive plate of an abrasive machine. The method is executed by a cleaning device including: a nozzle for jetting water; a brush for preventing the jetted water from scattering in the air, the brush enclosing the nozzle; and another brush for closing a gap between the preventing brush and an outer edge of the upper abrasive plate, the method is characterized by the steps of: jetting water from the nozzle toward the abrasive face of the upper abrasive plate; moving the nozzle toward the outer edge of the upper abrasive plate; and closing the gap by the closing brush when the gap is formed between the preventing brush and the outer edge of the upper abrasive plate.

14. 发明授权

US06290585B1 Polishing machine 有权
标题翻译：抛光机
公开(公告)号：US06290585B1
公开(公告)日：2001-09-18
申请号：US09510760
申请日：2000-02-22
申请人： Yoshio Nakamura
发明人： Yoshio Nakamura
IPC分类号： B24B500
CPC分类号： B24B37/11 , B24B41/007 , B24B41/04
摘要： The polishing machine is capable of preventing fine vibrations of a polishing face of a polishing plate. In the polishing machine, a plate holder is rotatably provided to a base. The polishing plate is mounted on the plate holder, and an upper face of the polishing plate is covered with a polishing cloth as the polishing face. A press unit presses a surface of a work piece onto the polishing face of the polishing plate so as to polish the surface of the work piece like a mirror face. A fluid bearing rotatably supports the plate holder by fluid pressure, at a position between the plate holder and the base, so as to keep the polishing face of the polishing plate flat.
摘要翻译：抛光机能够防止抛光板的抛光面的微细振动。在抛光机中，板保持器可旋转地设置在基座上。抛光板安装在板支架上，抛光板的上表面被抛光布覆盖作为抛光面。按压单元将工件的表面按压到抛光板的抛光面上，以像镜面一样抛光工件的表面。流体轴承通过流体压力在板保持器和基座之间的位置处可旋转地支撑板保持器，以保持抛光板的抛光面平坦。

15. 发明授权

US5918115A Method of manufacturing a surrounding gate type MOSFET 失效
公开(公告)号：US5918115A
公开(公告)日：1999-06-29
申请号：US901936
申请日：1997-07-29
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L21/332
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

16. 发明授权

US5633182A Method of manufacturing an image display device with reduced cell gap variation 失效
标题翻译：具有减小的电池间隙变化的图像显示装置的制造方法
公开(公告)号：US5633182A
公开(公告)日：1997-05-27
申请号：US570809
申请日：1995-12-12
申请人： Mamoru Miyawaki , Shigeki Kondo , Yoshio Nakamura , Tetsunobu Kouchi
发明人： Mamoru Miyawaki , Shigeki Kondo , Yoshio Nakamura , Tetsunobu Kouchi
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/13454 , H01L29/78648 , G02F1/133512 , G02F2201/48 , G02F2202/105 , Y10S438/96
摘要： Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.
摘要翻译：单个液晶单元的变化和相邻像素之间的串扰减少，通过在绝缘层的一个表面上提供晶体管及其互连层来提供稳定的操作并且增加孔径和S / N比，同时提供用于在其另一个表面上向液晶施加电压的电极。晶体管的一个主电极部分和液晶电压施加电极通过开口使用电极彼此连接。此外，在绝缘层的另一个表面上设置用于将主电极部分3连接到液晶电压施加电极的电极，以便它将光电晶体管屏蔽。

17. 发明授权

US5536361A Process for preparing semiconductor substrate by bonding to a metallic surface 失效
标题翻译：通过结合到金属表面来制备半导体衬底的工艺
公开(公告)号：US5536361A
公开(公告)日：1996-07-16
申请号：US376373
申请日：1995-01-23
申请人： Shigeki Kondo , Shigeyuki Matsumoto , Akira Ishizaki , Shunsuke Inoue , Yoshio Nakamura
发明人： Shigeki Kondo , Shigeyuki Matsumoto , Akira Ishizaki , Shunsuke Inoue , Yoshio Nakamura
IPC分类号： H01L21/02 , H01L21/762 , H01L21/768 , H01L27/12 , H01L31/18 , H01L21/306
CPC分类号： H01L31/1892 , H01L21/76256 , H01L21/768 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/96
摘要： A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.
摘要翻译：制备半导体衬底的方法包括使硅衬底多孔的步骤，在所得多孔衬底上形成无孔硅单晶层的步骤，将非多孔硅单晶层的表面接合到另一个的步骤具有金属表面的基板，以及通过选择性蚀刻去除接合的基板的多孔硅层的步骤。

18. 发明授权

US5512110A Process for production of grain oriented electrical steel sheet having excellent magnetic properties 失效
标题翻译：具有优良磁特性的晶粒取向电工钢板的制造方法
公开(公告)号：US5512110A
公开(公告)日：1996-04-30
申请号：US466866
申请日：1995-06-06
申请人： Yasunari Yoshitomi , Katsuro Kuroki , Yukio Matsuo , Hiroaki Masui , Yoshio Nakamura , Maremizu Ishibashi , Tsuyoshi Kawano , Tsutomu Haratani , Yoshiyuki Ushigami
发明人： Yasunari Yoshitomi , Katsuro Kuroki , Yukio Matsuo , Hiroaki Masui , Yoshio Nakamura , Maremizu Ishibashi , Tsuyoshi Kawano , Tsutomu Haratani , Yoshiyuki Ushigami
IPC分类号： C21D8/12 , C22C38/02 , H01F1/18
CPC分类号： C22C38/02 , C21D8/1255 , C21D8/1272 , C21D8/1233 , C21D8/1283
摘要： In the present invention, grain oriented electrical steel sheets provided by heating a slab comprising, by weight percent, 0.025 to 0.075% of C, 3.4 to 5.0% of Si, 0.015 to 0.080% of sol. Al, 0.0030 to 0.013% of N, 0.014% or less of (S+0.405 Se) and 0.05 to 0.8% of Mn, sol. Al (%)/Si (%) being 0.0080 or more, the balance consisting of Fe and unavoidable impurities at a temperature below 1280.degree. C., hot-rolling the heated slab, subjecting the hot-rolled steel sheet to cold rolling, subjecting the cold-rolled steel sheet to decarbonization annealing with regulating the average diameter of primary recrystallized grains of the steel sheet subjected to decarbonization annealing to 18 to 35 .mu.m in a period between the completion of the decarbonization annealing and the initiation of final annealing, coating the decarburized steel with an annealing separator and subjecting the coated steel sheet to final annealing, wherein the final annealing is effected in such a manner that the partial pressure of nitrogen, P .sub.N2 (%), in the annealing atmosphere is 12.5% or more in a steel sheet temperature range of from 900.degree. C. to 1150.degree. C. in the heating stage of the final annealing, and subjecting the steel sheet to nitriding to cause the steel sheet to absorb 0.0010% by weight or more of nitrogen in a period between the completion of the hot rolling and the initiation of secondary recystallization in the final annealing.
摘要翻译：在本发明中，通过加热板坯而提供的晶粒取向电工钢板，其包含重量百分比为0.025〜0.075％的C，3.4〜5.0％的Si，0.015〜0.080％的溶胶。 Al，0.0030〜0.013％N，0.014％以下（S + 0.405 Se）和0.05〜0.8％Mn，sol。 Al（％）/ Si（％）为0.0080以上，余量由温度低于1280℃的Fe和不可避免的杂质组成，热轧加热板坯，对热轧钢板进行冷轧，冷轧钢板进行脱碳退火，将脱碳退火钢板的一次再结晶晶粒的平均直径调整为18〜35μm，在完成脱碳退火和开始最终退火，涂布所述脱碳钢与退火分离剂一起进行最终退火，其中最终退火以使退火气氛中的氮分压P N2（％）为12.5％以上的方式进行，在最终退火的加热阶段的钢板温度范围为900〜1150℃，对钢板进行氮化处理，使钢板吸收0.0010％在最终退火之间的热轧完成和二次再结晶开始之间的时间内的氮气重量或更多。

19. 发明授权

US5466961A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5466961A
公开(公告)日：1995-11-14
申请号：US872295
申请日：1992-04-22
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L27/02 , H01L29/10
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

20. 发明授权

US5233224A Electrode having an improved configuration for a semiconductor element 失效
标题翻译：具有改进的半导体元件配置的电极
公开(公告)号：US5233224A
公开(公告)日：1993-08-03
申请号：US699596
申请日：1991-05-14
申请人： Osamu Ikeda , Yoshio Nakamura
发明人： Osamu Ikeda , Yoshio Nakamura
IPC分类号： H01L23/52 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/485 , H01L29/41 , H01L29/45 , H01L29/78
CPC分类号： H01L29/456 , H01L21/28512 , H01L21/76879 , H01L23/485 , H01L29/41 , H01L2924/0002
摘要： An electrode for semiconductor element to be directly connected to the semiconductor region of a semiconductor element is substantially shaped in a square column. When the length of one side of the surface in contact with the semiconductor region in said electrode is defined as L, the length of the other side as W, and the length in the direction crossed substantially vertically to said surface as H, the L, W, H satisfy the relationship of L>H>W.

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