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11. 发明授权

US06528724B1 Microdevice and its production method 失效
标题翻译：微设备及其生产方法
公开(公告)号：US06528724B1
公开(公告)日：2003-03-04
申请号：US09889424
申请日：2001-10-19
申请人： Yukihisa Yoshida , Martial Chabloz , Jiwei Jiao , Tsukasa Matsuura , Kazuhiko Tsutsumi
发明人： Yukihisa Yoshida , Martial Chabloz , Jiwei Jiao , Tsukasa Matsuura , Kazuhiko Tsutsumi
IPC分类号： H01L2302
CPC分类号： G01P15/125 , B81B2201/0228 , B81B2203/0136 , B81C1/0015 , B81C1/00579 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002 , Y10T29/49117
摘要： A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.
摘要翻译：一种微型器件，包括具有形成在表面上的凹部的绝缘基板和围绕凹部的绝缘基板的前表面上的梁状硅结构。梁状结构包括至少一个功能部分，并且功能部分具有结合到绝缘基板的支撑部分和与支撑部分一体并延伸穿过凹部的至少一个悬臂。微型装置还具有导电膜，该导电膜电连接到支撑部分，至少在悬臂下方的凹部的表面上。在干蚀刻工艺中，导电膜防止凹部的表面带正电。因此，具有正电荷的蚀刻气体不会受到来自凹部的电斥力，并且不会撞击到硅衬底的背面，因此不会发生悬臂的侵蚀。结果，由于在形状和尺寸方面形成了高度精确的束状结构，所以微型器件具有提高的可靠性和改进的设计自由度。

12. 发明申请

US20120168082A1 PLASMA GENERATING APPARATUS 审中-公开
标题翻译：等离子体发生装置
公开(公告)号：US20120168082A1
公开(公告)日：2012-07-05
申请号：US13394015
申请日：2010-07-15
申请人： Shinichi Izuo , Yukihisa Yoshida , Takaaki Murakami
发明人： Shinichi Izuo , Yukihisa Yoshida , Takaaki Murakami
IPC分类号： H01L21/3065 , H01J61/28 , C23C16/50
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/452 , C23C16/509 , H01J37/3244 , H01J37/32449 , H01J37/3255 , H01J37/32816
摘要： A plasma generating apparatus irradiates plasma on a treatment object. The plasma is generated under gas pressure equal to or higher than 100 pascals and equal to or lower than atmospheric pressure in an inter-electrode gap between a first electrode to which a power supply is connected and a second electrode arranged to be opposed to the first electrode and grounded. The first electrode has a structure in which the first electrode is retained on a grounded conductive retaining member via a solid dielectric provided on a surface not opposed to the second electrode, and a conductive film is continuously provided on a surface in a predetermined range in contact with the conductive retaining member and a surface in a predetermined range not in contact with the conductive retaining member on a surface of the solid dielectric.
摘要翻译：等离子体发生装置将等离子体照射在处理对象上。在连接有电源的第一电极和布置成与第一电极相对的第二电极之间的电极间间隙中，在等于或高于100pascals且等于或低于大气压力的气体压力下产生等离子体电极接地。第一电极具有这样的结构，其中第一电极经由设置在不与第二电极相对的表面上的固体电介质保持在接地的导电保持构件上，并且导电膜在预定的接触范围内的表面上连续地设置导电保持构件和在固体电介质的表面上与导电保持构件不接触的预定范围的表面。

13. 发明申请

US20070290517A1 Non-Contact Transport Apparatus 审中-公开
标题翻译：非接触运输装置
公开(公告)号：US20070290517A1
公开(公告)日：2007-12-20
申请号：US11754964
申请日：2007-05-29
申请人： Shigekazu Nagai , Akio Saitoh , Masahiko Someya , Masaru Saitoh , Yukihisa Yoshida
发明人： Shigekazu Nagai , Akio Saitoh , Masahiko Someya , Masaru Saitoh , Yukihisa Yoshida
IPC分类号： B65H29/00 , B65G49/07
CPC分类号： H01L21/6838 , H01L21/67784
摘要： A non-contact transport apparatus comprises a top plate with a supply port for supplying air thereto, a diffuser plate having a plurality of discharge holes for discharging air, and a sheet-shaped nozzle plate interposed between the top plate and the diffuser plate and having a plurality of nozzles therein. The top plate, the nozzle plate and the diffuser plate are stacked and integrally connected to one another through a plurality of connecting bolts. Air is supplied from the supply port and via flow passages to the plurality of nozzles. Air is directed to the outside from the plurality of discharge holes, via radially formed nozzles oriented in a radially outward direction.
摘要翻译：非接触输送装置包括：具有用于向其供给空气的供给口的顶板，具有多个用于排出空气的排出孔的扩散板，以及插入在顶板和扩散板之间的片状喷嘴板，多个喷嘴。顶板，喷嘴板和扩散板通过多个连接螺栓彼此堆叠并且一体地连接。空气从供给口供给，通过流路向多个喷嘴供给。空气通过沿径向向外的方向定向的径向形成的喷嘴从多个排出孔引导到外部。

14. 发明申请

US20130309416A1 ATMOSPHERIC PRESSURE PLASMA TREATMENT APPARATUS AND ATMOSPHERIC PRESSURE PLASMA TREATMENT METHOD 审中-公开
标题翻译：大气压力等离子体处理装置和大气压力等离子体处理方法
公开(公告)号：US20130309416A1
公开(公告)日：2013-11-21
申请号：US13981424
申请日：2011-11-21
申请人： Yoshinori Yokoyama , Shinichi Izuo , Yukihisa Yoshida , Takaaki Murakami
发明人： Yoshinori Yokoyama , Shinichi Izuo , Yukihisa Yoshida , Takaaki Murakami
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/45519 , C23C16/45595 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： An atmospheric pressure plasma treatment apparatus includes a moving unit configured to relatively move an atmospheric pressure plasma treatment head and member to be treated, gas supply units configured to supply a reaction gas and a curtain gas, and a control unit. When the atmospheric pressure plasma treatment head and the member are relatively moved, the control unit performs control to increase a flow rate of the reaction gas and the curtain gas from an opposite direction side of a relative moving direction of the member with respect to the atmospheric pressure plasma treatment head and reduce a flow rate of the reaction gas and the curtain gas in the relative moving direction side of the member compared with the flow rates of the reaction gas and the curtain gas flowing when the atmospheric pressure plasma treatment head and the member are not relatively moved.
摘要翻译：大气压等离子体处理装置包括移动单元，其构造成相对移动大气压等离子体处理头和待处理构件，构造成供应反应气体和帘式气体的气体供应单元以及控制单元。当大气压等离子体处理头和构件相对移动时，控制单元执行控制，以增加反作用气体和帘式气体相对于大气的相对移动方向的相对方向侧的流量与当大气压等离子体处理头和构件的流体流动的反应气体和帘式气体的流量相比，降低了构件的相对移动方向侧的反应气体和帘式气体的流量，不相对移动

15. 发明申请

US20090250160A1 METHOD OF FABRICATING OPTICAL FUNCTIONAL ELEMENT 审中-公开
标题翻译：制作光学功能元件的方法
公开(公告)号：US20090250160A1
公开(公告)日：2009-10-08
申请号：US12401203
申请日：2009-03-10
申请人： Shinnosuke Soda , Yukihisa Yoshida
发明人： Shinnosuke Soda , Yukihisa Yoshida
IPC分类号： B32B37/00
CPC分类号： G02F1/3558 , Y10T156/1052
摘要： A comb-teeth electrode, a frame electrode, and an inter-electrode wire are formed on a first major surface of a substrate made of a ferroelectric material. A back-face electrode is formed on a second major surface of the substrate. A periodically-poled structure is formed by applying a voltage between the frame electrode and the back-face electrode. A region equivalent to the periodically-poled structure is cut from the substrate thereby fabricating an optical functional element. The inter-electrode wire is formed on an insulating layer that is formed on the substrate.
摘要翻译：在由铁电材料制成的基板的第一主表面上形成梳齿电极，框电极和电极间线。背面电极形成在基板的第二主表面上。通过在框电极和背面电极之间施加电压来形成周期性极化的结构。从基板上切下与周期性极化结构相当的区域，由此制造光功能元件。电极线形成在形成在基板上的绝缘层上。

16. 发明授权

US07081370B2 Silicon substrate apparatus and method of manufacturing the silicon substrate apparatus 有权
标题翻译：硅基板装置及其制造方法
公开(公告)号：US07081370B2
公开(公告)日：2006-07-25
申请号：US10492360
申请日：2002-09-04
申请人： Munehito Kumagai , Yukihisa Yoshida , Tsukasa Matsuura , Yukihiro Honma
发明人： Munehito Kumagai , Yukihisa Yoshida , Tsukasa Matsuura , Yukihiro Honma
IPC分类号： H01L21/00
CPC分类号： H03D9/0616
摘要： A first rectangular groove having a rectangular cross section and a second rectangular groove substantially orthogonal to the first rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third rectangular groove located at a position facing the first rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second rectangular groove, so that the frequency conversion device is located where the first and second rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first rectangular groove opposes the third rectangular groove, forming a rectangular waveguide which includes the first rectangular groove and the third rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.
摘要翻译：在第一硅衬底中形成具有矩形截面的第一矩形槽和与第一矩形槽基本正交并且具有矩形横截面的第二矩形槽。在第二硅衬底上形成位于面对第一矩形槽并且具有矩形横截面的位置处的第三矩形槽。包括变频装置的装置基板设置在第二矩形槽中，使得变频装置位于第一和第二矩形槽彼此正交的位置。此外，器件基板所在的第一硅基板与第二硅基板接合，使得第一矩形槽与第三矩形槽相对，形成包括第一矩形槽和第三矩形槽的矩形波导，以及其中接收的高频信号传播并入射在变频装置上。

17. 发明申请

US20050009226A1 Silicon substrate device and its manufacturing method 有权
标题翻译：硅衬底器件及其制造方法
公开(公告)号：US20050009226A1
公开(公告)日：2005-01-13
申请号：US10492360
申请日：2002-09-04
申请人： Munehito Kumagai , Yukihisa Yoshida , Tsukasa Matsuura , Yukihiro Honma
发明人： Munehito Kumagai , Yukihisa Yoshida , Tsukasa Matsuura , Yukihiro Honma
IPC分类号： H03D9/06 , H01L21/00 , H01L33/00
CPC分类号： H03D9/0616
摘要： A first narrow rectangular groove having a rectangular cross section and a second narrow rectangular groove substantially orthogonal to the first narrow rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third narrow rectangular groove located at a position facing the first narrow rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second narrow rectangular groove, so that the frequency conversion device is located where the first and second narrow rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first narrow rectangular groove opposes the third narrow rectangular groove, forming a rectangular waveguide which includes the first narrow rectangular groove and the third narrow rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.
摘要翻译：在第一硅衬底中形成具有矩形横截面的第一窄矩形槽和与第一窄矩形槽基本正交并具有矩形横截面的第二窄矩形槽。在第二硅衬底上形成位于面对第一窄矩形槽并且具有矩形横截面的位置的第三窄矩形槽。包括频率转换装置的装置基板设置在第二窄矩形槽中，使得变频装置位于第一和第二窄矩形槽彼此正交的位置。此外，器件基板所在的第一硅基板与第二硅基板接合，使得第一窄矩形槽与第三窄矩形槽相对，形成包括第一窄矩形槽和第三窄矩形槽的矩形波导矩形槽，并且其中接收的高频信号传播并入射在变频装置上。

18. 发明授权

US06759591B2 Silicon device 失效
标题翻译：硅器件
公开(公告)号：US06759591B2
公开(公告)日：2004-07-06
申请号：US10343963
申请日：2003-02-06
申请人： Yukihisa Yoshida , Munehito Kumagai , Kazuhiko Tsutsumi
发明人： Yukihisa Yoshida , Munehito Kumagai , Kazuhiko Tsutsumi
IPC分类号： H01L2302
CPC分类号： G01C19/5755 , G01P1/023 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10T428/24612
摘要： A silicon device includes an insulating substrate having a recess on the surface of the substrate, and a beam-like structure made of silicon on the front surface of the insulating substrate, surrounds the recess. The beam-like structure includes at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The silicon device also includes a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least in a portion directly opposite the cantilever. The conductive film prevents the insulating substrate from being charged, thereby significantly suppressing damage of the beam-like structure during dry etching.
摘要翻译：硅器件包括在衬底的表面上具有凹陷的绝缘衬底和在绝缘衬底的前表面上由硅制成的梁状结构，围绕凹部。束状结构包括至少一个功能部分，其具有结合到绝缘基板的支撑部分和至少一个与支撑部分一体并延伸穿过凹部的悬臂。硅器件还包括围绕并与波束状结构隔开并在绝缘基片上的由硅制成的框架。硅器件还包括与框架电连续并且在绝缘衬底的表面上至少在直接与悬臂相对的部分中的导电膜。导电膜防止绝缘基板被充电，从而显着地抑制干蚀刻期间的束状结构的损坏。

19. 发明授权

US09266715B2 SOI wafer, manufacturing method therefor, and MEMS device 有权
公开(公告)号：US09266715B2
公开(公告)日：2016-02-23
申请号：US14193209
申请日：2014-02-28
申请人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
发明人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
IPC分类号： H01L21/00 , B81B7/00 , H01L21/762 , H01L29/16 , B81B3/00 , B81C1/00 , H01L23/26
CPC分类号： B81B7/0038 , B81B3/0018 , B81C1/00285 , H01L21/76259 , H01L23/26 , H01L29/16 , H01L2924/0002 , H01L2924/00
摘要： In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

20. 发明授权

US09212049B2 SOI wafer, manufacturing method therefor, and MEMS device 有权
标题翻译： SOI晶片，其制造方法和MEMS器件
公开(公告)号：US09212049B2
公开(公告)日：2015-12-15
申请号：US13743878
申请日：2013-01-17
申请人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
发明人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
IPC分类号： H01L21/00 , B81B7/00 , H01L21/762 , H01L29/16 , B81B3/00 , B81C1/00 , H01L23/26
CPC分类号： B81B7/0038 , B81B3/0018 , B81C1/00285 , H01L21/76259 , H01L23/26 , H01L29/16 , H01L2924/0002 , H01L2924/00
摘要： In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
摘要翻译：为了获得具有优异的金属杂质吸收能力的SOI晶片，提供了一种制造SOI晶片的有效方法和使用这种SOI晶片的高可靠性MEMS器件，其包括：支撑晶片（1）以及与它们之间的氧化膜（3）结合在一起的有源层晶片（6），所述支撑晶片（1）和所述有源层晶片（6）中的每一个都是硅晶片; 形成在所述硅晶片中的至少一个的接合面中的空腔（1b）以及形成在与所述接合面相反的一侧的表面上的吸气材料（2）。

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