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11. 发明申请

US20120155169A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120155169A1
公开(公告)日：2012-06-21
申请号：US13364496
申请日：2012-02-02
申请人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
发明人： Yasuhiko Honda , Takahiro Suzuki , Masao Iwamoto , Kiyochika Kinjo
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C29/00
摘要： A nonvolatile semiconductor storage device storing plural data bits in one memory cell by assigning multivalued data having a higher-order bit selected from one of a pair of data in a first unit and a lower-order bit selected from the other of the pair of data. In a first write operation processing data in the first unit, logic of one of the higher-order and the lower-order bit is fixed, and two multivalued data that maximize the difference between the threshold voltages are assigned, thereby storing one bit of input data in the memory cell in a pseudo binary state. In a second write operation processing data in a second unit larger than the first unit, plural input data bits in a multivalued state and parity data for error correction in the second unit are stored in the memory cell.
摘要翻译：一种非易失性半导体存储装置，其通过分配从第一单位中的一对数据中选择的高阶位和从所述一对数据中的另一个中选择的低位位选择多位数据来存储多个数据位在一个存储单元中。在第一单元中处理数据的第一写入操作中，高阶和低位中的一个的逻辑是固定的，并且分配两个阈值电压之间的差最大化的多值数据，从而存储一位输入存储单元中的伪二进制状态的数据。在第二写入操作中，处理大于第一单元的第二单元中的数据，多值状态中的多个输入数据位和第二单元中用于纠错的奇偶校验数据被存储在存储单元中。

12. 发明授权

US11082617B2 Electronic device including power supply and method to be executed by electronic device including power supply 有权
公开(公告)号：US11082617B2
公开(公告)日：2021-08-03
申请号：US16353765
申请日：2019-03-14
申请人： Naoto Asakura , Yoshitaka Kimura , Teruyuki Takei , Takahiro Suzuki
发明人： Naoto Asakura , Yoshitaka Kimura , Teruyuki Takei , Takahiro Suzuki
IPC分类号： H04N5/232 , H04N5/369
摘要： An electronic device includes a power supply and a power supply circuit. The power supply circuit is configured to alternately switch a state of the electronic device between a first state to supply power to another device and a second state to receive power from said another device, and stop a switching operation of the state of the electronic device when the electronic device is off, to fix the state of the electronic device to one of the first state and the second state.

13. 发明授权

US10058846B2 Catalyst for purifying exhaust gas 有权
公开(公告)号：US10058846B2
公开(公告)日：2018-08-28
申请号：US15663952
申请日：2017-07-31
申请人： Yoshinori Saito , Masahide Miura , Seiji Nakahigashi , Hiromasa Suzuki , Takahiro Suzuki , Kosuke Iizuka , Minoru Ito , Ryota Nakashima
发明人： Yoshinori Saito , Masahide Miura , Seiji Nakahigashi , Hiromasa Suzuki , Takahiro Suzuki , Kosuke Iizuka , Minoru Ito , Ryota Nakashima
IPC分类号： B01J23/10 , B01J23/63 , B01J21/06 , B01J35/00 , B01J35/02 , B01J35/04 , B01J20/02 , B01J20/28 , B01J37/02 , B01J20/32 , B01D53/94
CPC分类号： B01J23/10 , B01D53/9445 , B01D53/945 , B01D2255/1023 , B01D2255/1025 , B01D2255/2061 , B01D2255/2063 , B01D2255/2066 , B01D2255/2092 , B01D2255/407 , B01D2255/9022 , B01D2255/908 , B01D2255/9202 , B01J20/0211 , B01J20/0225 , B01J20/28004 , B01J20/3236 , B01J23/63 , B01J35/0006 , B01J35/002 , B01J35/023 , B01J37/0244 , C01G25/00 , Y02T10/22
摘要： An catalyst for purifying exhaust gas comprising an OCS material that has sufficient heat resistance and achieves a favorable balance between the oxygen storage volume and the oxygen absorption/release rate includes an catalyst for purifying exhaust, which has a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises a ceria-zirconia-based composite oxide having a pyrochlore structure in an amount of 5 to 100 g/L based on the volume of the substrate, the ceria-zirconia-based composite oxide has a secondary particle size (D50) of 3 μm to 7 μm, and the ceria-zirconia-based composite oxide optionally contains praseodymium.

14. 发明申请

US20160370738A1 RECORDING MEDIUM CONVEYANCE GUIDE DEVICE, TRANSFER DEVICE, AND IMAGE FORMING APPARATUS 审中-公开
标题翻译：记录介质传输指南设备，传输设备和图像形成设备
公开(公告)号：US20160370738A1
公开(公告)日：2016-12-22
申请号：US15173364
申请日：2016-06-03
申请人： Takahiro Suzuki
发明人： Takahiro Suzuki
IPC分类号： G03G15/16
CPC分类号： G03G15/1605 , G03G15/6558 , G03G2215/0129
摘要： A recording medium conveyance guide device includes a conveyance guide disposed upstream from a transfer nip to transfer an image to a recording medium in a recording-medium conveyance direction, to at least partially contact the recording medium. The recording medium conveyance guide device further includes a drive device to move a leading edge of the conveyance guide from a first position to a second position closer to the transfer nip than the first position when the trailing edge of the recording medium approaches the leading edge of the conveyance guide.
摘要翻译：记录介质传送引导装置包括设置在转印夹持部的上游的输送引导件，以将记录介质输送方向的图像转印到记录介质上，至少部分地与记录介质接触。记录介质传送引导装置还包括驱动装置，当记录介质的后缘接近记录介质的前缘时，驱动装置将输送引导件的前边缘从第一位置移动到比第一位置更靠近转印夹持口的第二位置运输指南。

15. 发明授权

US08999119B2 Hydrogen production device 有权
标题翻译：氢气生产装置
公开(公告)号：US08999119B2
公开(公告)日：2015-04-07
申请号：US13702443
申请日：2011-08-26
申请人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
发明人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
IPC分类号： C25B1/04 , C25B1/02 , C25B9/00 , C25B9/06 , C25B9/08 , C25B9/10 , C25B13/00 , C25B11/02 , C25B15/00 , C25B11/04 , C01B3/04 , C25B1/00 , C25B11/03 , B01J35/00
CPC分类号： C25B11/0442 , B01J35/004 , C01B3/042 , C25B1/003 , C25B9/08 , C25B11/03 , Y02E60/364 , Y02E60/368
摘要： The hydrogen production device of the present invention includes: a first electrode including a conductive substrate and a photocatalytic semiconductor layer; a second electrode that is electrically connected to the first electrode and disposed in a second region opposite to a first region relative to the first electrode; the first region is defined as a region on a side of a surface of the first electrode in which the photocatalytic semiconductor layer is provided; a water-containing electrolyte solution; and a housing containing these. The first electrode is provided with first through-holes and the second electrode is provided with second through-holes; and the first through-holes and second through-holes form a communicating hole for allowing the first region and the second region to communicate with each other. An ion exchange membrane having substantially the same shape as the communicating hole is disposed in the communicating hole to close the communicating hole.
摘要翻译：本发明的氢制造装置包括：第一电极，其包括导电性基板和光催化性半导体层; 第二电极，其电连接到第一电极并且设置在相对于第一电极与第一区域相反的第二区域中; 第一区域被定义为设置有光催化半导体层的第一电极的表面侧的区域; 含水电解质溶液; 和包含这些的房屋。第一电极设置有第一通孔，第二电极设置有第二通孔; 并且第一通孔和第二通孔形成用于使第一区域和第二区域彼此连通的连通孔。具有与连通孔大致相同形状的离子交换膜设置在连通孔中以闭合连通孔。

16. 发明申请

US20150080211A1 IRON OXIDE-ZIRCONIA COMPOSITE OXIDE AND METHOD FOR PRODUCING SAME, AND EXHAUST GAS PURIFICATION CATALYST 有权
标题翻译：氧化铁 - 氧化锆氧化物及其制造方法和排气净化催化剂
公开(公告)号：US20150080211A1
公开(公告)日：2015-03-19
申请号：US14384283
申请日：2013-04-26
申请人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
发明人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
IPC分类号： B01J23/89 , B01J23/83 , B01J23/745
CPC分类号： B01J23/894 , B01J21/066 , B01J23/10 , B01J23/745 , B01J23/83 , B01J35/0006 , B01J35/002 , B01J37/0248 , B01J37/03 , C01G25/00 , C01G49/0018 , C01G49/0054 , C01P2002/72 , C01P2004/03 , C01P2004/32 , C01P2004/45 , C01P2004/61 , C01P2006/12
摘要： A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, determined by the following Formulae (1) to (3), is not greater than 20:  [ Math .  1 ]  R i  ( Fe ) = I i  ( Fe ) × 100 I i  ( Fe ) + I i  ( Zr ) + I i  ( X ) ( 1 )  R i  ( Zr + X ) = { I i  ( Zr ) + I i  ( X ) } × 100 I i  ( Fe ) + I i  ( Zr ) + I i  ( X ) ( 2 ) COV  ( Fe , Zr + X ) = 1 n  ∑ i = 1 n   [ { R i  ( Fe ) - R av  ( Fe ) } × { R i  ( Zr + X ) - R av  ( Zr + X ) } ] ( 3 ) (in the formula, Ii(Fe), Ii(Zr), and Ii(X) respectively represent the ratios of the X-ray intensities of iron, zirconium, and the rare-earth element measured at a measurement point i (where i=1 to n) to the 100% intensities of the respective elements as measured by subjecting the composite oxide to a ray analysis through EPMA (WDX: wavelength dispersive X-ray spectrometry), where Rav(Fe) and Rav(Zr+X) represent the mean values of Ri(Fe) and Ri(Zr+X), respectively, at all measurement points n).
摘要翻译：提供具有高储氧能力的复合氧化物，而不使用铈。复合氧化物是含有铁，锆和稀土元素的氧化铁 - 氧化锆复合氧化物。 Fe2O3，ZrO2和稀土类元素的氧化物的总含量为90质量％以上，Fe 2 O 3的氧化铁含量为10〜90质量％，协方差COV的绝对值（1）〜（3）确定的复合氧化物的（Fe，Zr + X），其在大气中在大于或等于900℃的温度下烘烤5小时以上，，不大于20：（Fe）= I（Fe）×100 I i（Fe）+ I（Zr）+ I（X）（1）R i（Zr + X ）（I）（X）（X）（2）COV（Fe，Zr + X））= 1 nΣi = 1 n[{R i（Fe）-R av（Fe）}×{R i（Zr + X）-R av（Zr + X）}] 3）（式中，Ii（Fe），Ii（Zr）和Ii（X）分别表示在测量点i测量的铁，锆和稀土元素的X射线强度的比例其中i = 1至n）相对于通过EPMA（WDX：波长色散X射线光谱法）对复合氧化物进行射线分析测量的各元素的100％强度，其中Rav（Fe）和Rav（Zr + X）分别表示在所有测量点n处的Ri（Fe）和Ri（Zr + X）的平均值。

17. 发明授权

US08857276B2 Pressure detection unit 有权
标题翻译：压力检测单元
公开(公告)号：US08857276B2
公开(公告)日：2014-10-14
申请号：US13392621
申请日：2010-08-26
申请人： Takahiro Suzuki , Yuko Endo , Yoshihiro Kai , Yuichiro Takai
发明人： Takahiro Suzuki , Yuko Endo , Yoshihiro Kai , Yuichiro Takai
IPC分类号： G01L1/18 , G01L1/20 , G06F3/041
CPC分类号： G01L1/20 , G06F3/041
摘要： A pressure detection unit includes a first substrate and a second substrate which are disposed in opposition to each other and subject to load from the outside, a pressure detection portion having a pair of electrodes provided between the first substrate and the second substrate and in the first substrate and the second substrate, and electrically conductive pressure-sensitive ink disposed between the pair of electrodes and having electrical characteristics which varies according to the load, and a load transmission member disposed between the first substrate and the pressure detection portion and/or between the second substrate and the pressure detection portion, the load transmission member transmitting the load to the pressure detection portion in a concentrated manner.
摘要翻译：压力检测单元包括第一基板和第二基板，所述第一基板和第二基板彼此相对设置并受到来自外部的负载;压力检测部分，具有设置在第一基板和第二基板之间的第一对电极，基板和第二基板，以及设置在所述一对电极之间并具有根据负载而变化的电特性的导电压敏墨，以及设置在所述第一基板和所述压力检测部之间和/ 第二基板和压力检测部，负载传递部件以集中的方式将负载传递到压力检测部。

18. 发明授权

US08821700B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US08821700B2
公开(公告)日：2014-09-02
申请号：US13502322
申请日：2010-11-04
申请人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
发明人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
IPC分类号： C25B1/04 , C25B5/00 , C25B9/06 , C25B1/00 , C01B3/04 , H01M8/06 , H01M14/00
CPC分类号： C25B1/003 , C01B3/042 , H01M8/0606 , H01M14/005 , Y02E60/364 , Y02E60/366 , Y02E60/50 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要翻译：光电化学电池（100）包括：包括导体（121），具有纳米管阵列结构的第一n型半导体层（122）和第二n型半导体层（123）的半导体电极（120）连接到导体（121）的对电极（130）; 与第二n型半导体层（123）和对电极（130）接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。相对于真空度，第二n型半导体层（123）中的导带和价带的带边缘电平分别高于导带和带隙的带边缘电平，第一n型半导体层（122），（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（123）的费米能级，（III）导体（121）的费米能级高于第一n型半导体层（122）的费米能级。

19. 发明授权

US08734625B2 Hydrogen generation device 有权
标题翻译：氢气发生装置
公开(公告)号：US08734625B2
公开(公告)日：2014-05-27
申请号：US13522855
申请日：2011-01-19
申请人： Takahiro Suzuki , Takaiki Nomura , Kazuhito Hatoh , Noboru Taniguchi , Tomohiro Kuroha , Kenichi Tokuhiro
发明人： Takahiro Suzuki , Takaiki Nomura , Kazuhito Hatoh , Noboru Taniguchi , Tomohiro Kuroha , Kenichi Tokuhiro
IPC分类号： C25B9/00 , C25B11/00 , C25B9/04 , C25B9/06 , C25B9/16 , C25B11/04
CPC分类号： C25B1/003 , C01B3/042 , C01B2203/066 , Y02E60/364 , Y02E60/368
摘要： A hydrogen generation device (100) of the present invention includes: a transparent substrate (1); a photocatalytic electrode (4) formed of a transparent conductive layer (2) and a photocatalytic layer (3) disposed on the transparent substrate (1); a counter electrode (8) connected electrically to the transparent conductive layer (2); a water-containing electrolyte solution layer provided between the photocatalytic electrode (3) and the counter electrode (8); a separator (6) that separates the electrolyte solution layer into a first electrolyte solution layer (5) in contact with the photocatalytic electrode (4) and a second electrolyte solution layer (7) in contact with the counter electrode (8); a first gas outlet (14) for discharging a gas generated in the first electrolyte solution layer (5); and a second gas outlet (15) for discharging a gas generated in the second electrolyte solution layer (7). The photocatalytic electrode (4) and the counter electrode (8) are arranged so that a surface of the photocatalytic layer (3) and a surface of the counter electrode (8) face each other. The separator (6) allows an electrolyte in the electrolyte solution layer to pass therethrough and prevents hydrogen gas and oxygen gas in the electrolyte solution layer from passing therethrough.
摘要翻译：本发明的氢产生装置（100）包括：透明基板（1）; 由透明导电层（2）和设置在透明基板（1）上的光催化层（3）形成的光催化电极（4）; 与所述透明导电层（2）电连接的对电极（8）; 设置在光催化剂电极（3）和对电极（8）之间的含水电解液层; 将电解质溶液层分离成与光催化剂电极（4）接触的第一电解质溶液层（5）和与反电极（8）接触的第二电解液层（7）的分离器（6）。用于排出在第一电解质溶液层（5）中产生的气体的第一气体出口（14）; 和用于排出在第二电解质溶液层（7）中产生的气体的第二气体出口（15）。光催化剂电极（4）和对电极（8）的配置使得光催化剂层（3）的表面和对置电极（8）的表面彼此面对。分离器（6）允许电解质溶液层中的电解质通过，防止电解质溶液层中的氢气和氧气通过。

20. 发明申请

US20140004435A1 PHOTOELECTRODE AND METHOD FOR PRODUCING SAME, PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME, AND HYDROGEN GENERATION METHOD 审中-公开
标题翻译：用于制造它们的光电及其制造方法，使用它们的光电化学电池和能量系统以及氢生成方法
公开(公告)号：US20140004435A1
公开(公告)日：2014-01-02
申请号：US14005156
申请日：2012-04-25
申请人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
发明人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
IPC分类号： C25B11/04 , C25B1/00 , H01M8/06
CPC分类号： C25B1/003 , B01J35/004 , C01B3/042 , C25B1/04 , C25B11/0405 , C25B11/0478 , H01G9/2027 , H01M8/0656 , H01M16/003 , Y02E10/542 , Y02E60/364 , Y02E60/366 , Y02P20/135 , Y02P70/521
摘要： A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).
摘要翻译：本发明的光电极（100）包括设置在导电层（12）上的导电层（12）和光催化层（13）。导电层（12）由金属氮化物制成。光催化层（13）由选自氮化物半导体和氧氮化物半导体中的至少一种制成。当光催化层（13）由n型半导体制成时，导电层（12）的真空度与费米能级之间的能量差小于真空级与费米能级之间的能量差光催化层（13）。当光催化层（13）由p型半导体制成时，导电层（12）的真空度与费米能级之间的能量差大于真空度与费米能级之间的能量差光催化层（13）。

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