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11. 发明授权

US07054187B2 Magnetic memory 有权
公开(公告)号：US07054187B2
公开(公告)日：2006-05-30
申请号：US10981508
申请日：2004-11-05
申请人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

12. 发明授权

US06873023B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US06873023B2
公开(公告)日：2005-03-29
申请号：US10418047
申请日：2003-04-18
申请人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C11/16 , H01L43/00
CPC分类号： G11C11/16
摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.
摘要翻译：写字线被放置在MTJ元素的正下方。写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。数据选择线（读/写位线）设置在MTJ元件上。数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

13. 发明授权

US06831857B2 Magnetic memory 失效
公开(公告)号：US06831857B2
公开(公告)日：2004-12-14
申请号：US10329417
申请日：2002-12-27
申请人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
发明人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

14. 发明授权

US07333359B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07333359B2
公开(公告)日：2008-02-19
申请号：US10419873
申请日：2003-04-22
申请人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/06 , H01F10/3254
摘要： A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.
摘要翻译：写字线被放置在MTJ元素的正下方。写字线在X方向上延伸，并且写字线的侧表面和下表面涂覆有硬磁材料和轭材料。硬磁材料被通过写入字线的剩余电流磁化，并且通过剩余磁化来校正MTJ元件的特性。数据选择线（读/写位线）设置在MTJ元件上。数据选择线在与X方向相交的Y方向上延伸，并且数据选择线的表面的一部分涂覆有轭材料。

15. 发明申请

US20050083745A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20050083745A1
公开(公告)日：2005-04-21
申请号：US10981508
申请日：2004-11-05
申请人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C11/16 , G11C7/00
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
摘要翻译：磁存储器包括：具有磁记录层的磁阻效应元件; 在磁阻效应元件上或其下方沿第一方向延伸的第一写入布线，布线的轴向横截面的重心与重心处的厚度中心分开，并且重心偏向磁阻效应元件; 以及写入电路，其被配置为使电流通过所述第一写入布线，以便通过所述电流产生的磁场将信息记录在所述磁记录层中。

16. 发明授权

US06831855B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US06831855B2
公开(公告)日：2004-12-14
申请号：US10345188
申请日：2003-01-16
申请人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
摘要翻译：磁存储器包括：具有磁记录层的磁阻效应元件; 在磁阻效应元件上或其下方沿第一方向延伸的第一写入布线，布线的轴向横截面的重心与重心处的厚度中心分开，并且重心偏向磁阻效应元件; 以及写入电路，其被配置为使电流通过所述第一写入布线，以便通过所述电流产生的磁场将信息记录在所述磁记录层中。

17. 发明授权

US06807094B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US06807094B2
公开(公告)日：2004-10-19
申请号：US10769757
申请日：2004-02-03
申请人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
IPC分类号： G11C1115
CPC分类号： G11C11/16
摘要： A magnetic memory includes a magnetoresistance effect element having a magnetic recording layer, a first wiring extending in a first direction on or below the magnetoresistance effect element, a covering layer provided on at least both sides of the first wiring, and a writing circuit configured to pass a current through the first wiring in order to record information in the magnetic recording layer by a magnetic field generated by the current. The covering layer is made of magnetic material and has a uniaxial anisotropy in the first direction, along which a magnetization of the covering layer occurs.
摘要翻译：磁存储器包括具有磁记录层的磁阻效应元件，在磁阻效应元件上或其下方沿第一方向延伸的第一布线，设置在第一布线的至少两侧的覆盖层，以及写入电路，通过第一布线传递电流，以便通过电流产生的磁场将信息记录在磁记录层中。覆盖层由磁性材料制成，并且在第一方向上具有单轴各向异性，沿着该方向发生覆盖层的磁化。

18. 发明授权

US09274280B2 Optical waveguide type optical terminator 有权
标题翻译：光波导型光终端器
公开(公告)号：US09274280B2
公开(公告)日：2016-03-01
申请号：US14119746
申请日：2012-05-10
申请人： Jun Ushida , Shigeru Nakamura , Shigeki Takahashi
发明人： Jun Ushida , Shigeru Nakamura , Shigeki Takahashi
IPC分类号： G02B6/10 , G02B6/24 , G02B6/12
CPC分类号： G02B6/243 , G02B6/12 , G02B2006/12126
摘要： An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019-1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).
摘要翻译：光波导型光学终端器形成至少包括形成在包层（102）上的光吸收芯（103）的光波导结构，其包括由1019cm-3以上的杂质为硅的硅构成的部分并且通过与包括由硅构成的芯（105）的光波导光学连接而被使用。光吸收芯（103）足够，只要至少掺杂约1019cm-3的杂质即可。例如，其杂质浓度足以在1019-1020cm-3的范围内。这种杂质的存在导致光吸收芯（103）中的光的吸收。

19. 发明授权

US09201196B2 High-order mode filter 有权
标题翻译：高阶模式滤波器
公开(公告)号：US09201196B2
公开(公告)日：2015-12-01
申请号：US14360107
申请日：2012-11-29
申请人： Shigeki Takahashi
发明人： Shigeki Takahashi
IPC分类号： G02B6/10 , G02B6/122 , G02B6/14 , G02B6/26 , G02B6/12
CPC分类号： G02B6/122 , G02B6/14 , G02B6/268 , G02B2006/12097 , G02B2006/12109
摘要： A high-order mode filter includes a slab region, a band-shaped projection elongated in an optical waveguide direction, a first optical waveguide including a disturbance element and a second optical waveguide. The disturbance element is formed by doping impurities into the slab region, thus indicating a lower refractive index than the slab region. Both the first optical waveguide and the second optical waveguide are alternately arranged. The first optical waveguide may include a disturbance element positioned close to the projection, while the second optical waveguide may include a disturbance element distanced from the projection in the slab region. The high-order mode filter causes a large high-order mode loss due to interference between a removable high-order mode and an intentional high-order mode at the connecting face between the first optical waveguide and the second optical waveguide, thus reducing reflected light and stray light.
摘要翻译：高阶模式滤波器包括平板区域，在光波导方向上延伸的带状突起，包括扰动元件的第一光波导和第二光波导。扰乱元件是通过将杂质掺杂到板坯区域中形成的，因此表示比板坯区域更低的折射率。第一光波导和第二光波导都交替布置。第一光波导可以包括靠近突起定位的扰动元件，而第二光波导可以包括远离板坯区域中的突起的扰动元件。高阶模式滤波器由于第一光波导和第二光波导之间的连接面处的可移除高阶模式和有意高阶模式之间的干涉而导致大的高阶模损耗，从而减少了反射光和杂散光。

20. 发明申请

US20120182051A1 DRIVING CIRCUIT FOR TRANSISTOR 有权
标题翻译：驱动电路用于晶体管
公开(公告)号：US20120182051A1
公开(公告)日：2012-07-19
申请号：US13433624
申请日：2012-03-29
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

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