专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5589002A Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing 失效
标题翻译：用于半导体晶片处理装置的气体分布板，具有用于抑制电弧的装置
公开(公告)号：US5589002A
公开(公告)日：1996-12-31
申请号：US217467
申请日：1994-03-24
申请人： Yuh-Jia Su
发明人： Yuh-Jia Su
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/3244
摘要： A gas distribution plate for a semiconductor wafer process chamber has a symmetrical pattern of non-circular openings formed therein for the passage of gas therethrough. The smaller axis of the non-circular openings should be at least about 127 .mu.m (5 mils), and preferably at least about 254 .mu.m (10 mils), but less than about 762 .mu.m (30 mils), and preferably less than about 635 .mu.m (25 mils). The larger axis is greater than the smaller axis, preferably at least about 635 .mu.m (25 mils), and most preferably at least about 762 .mu.m (30 mils). At least some of the walls of the non-circular openings are preferably not perpendicular to the plane of the face of the gas distribution plate, but are rather slanted, at an angle of from at least 30.degree. to less than 90.degree., toward the center or axis of the outer face of the circular gas distribution plate which faces the wafer. Arcing on the face of the gas distribution plate may be further inhibited by providing peripheral conductive means on the face of the gas distribution plate electrically connected to grounded or neutral portions of the processing chamber to thereby provide a conductive path for unstable plasma at the surface of the gas distribution plate.
摘要翻译：用于半导体晶片处理室的气体分配板具有形成在其中用于使气体通过的非圆形开口的对称图案。非圆形开口的较小轴应至少为约127μm（5密耳），优选至少约254μm（10密耳），但小于约762μm（30密耳），优选较小比约635亩（25密尔）。较大的轴大于较小轴，优选至少约635μm（25密耳），最优选至少约762μm（30密耳）。非圆形开口的至少一些壁优选地不垂直于气体分配板的表面的平面，而是以至少30度至小于90度的角度向着圆形气体分配板的面向晶片的外表面的中心或轴线。可以通过在与处理室的接地或中性部分电连接的气体分配板的表面上设置周边导电装置来进一步抑制气体分配板的表面的电流，从而为气体分配板。

12. 发明授权

US5507874A Method of cleaning of an electrostatic chuck in plasma reactors 失效
标题翻译：在等离子体反应器中清洁静电卡盘的方法
公开(公告)号：US5507874A
公开(公告)日：1996-04-16
申请号：US253458
申请日：1994-06-03
申请人： Yuh-Jia Su , Richard Muh
发明人： Yuh-Jia Su , Richard Muh
IPC分类号： H01L21/302 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/304 , H01L21/3065 , H01L21/31 , H01L21/683 , C23C16/00
CPC分类号： H01J37/32 , B08B7/0035 , C23C16/4404 , C23C16/4407 , H01J37/32871 , H01J2237/022
摘要： The present invention provides a method for removing particulate contaminants from an electrostatic chuck pedestal for a semiconductor workpiece by physical removal employing a soft material workpiece or by creating a plasma sheath which suspends the contaminants from the chuck surface and entrains them in the gas stream of the chamber vacuum exhaust system of the chamber. The contaminant removal processes are particularly effective in continuous plasma processes for the treatment of workpieces.
摘要翻译：本发明提供了一种通过使用软质材料工件的物理去除或通过产生等离子体鞘来从半导体工件的静电吸盘基座去除微粒污染物的方法，该等离子体护套将污染物从卡盘表面悬浮并将其夹带在室内真空排气系统。污染物去除方法在用于处理工件的连续等离子体工艺中特别有效。

13. 发明授权

US07569492B1 Method for post-etch cleans 有权
标题翻译：蚀刻后清洗方法
公开(公告)号：US07569492B1
公开(公告)日：2009-08-04
申请号：US12111095
申请日：2008-04-28
申请人： David L. Chen , Yuh-Jia Su , Eddie Ka Ho Chiu , Maria Paola Pozzoli , Senzi Li , Giuseppe Colangelo , Simone Alba , Simona Petroni
发明人： David L. Chen , Yuh-Jia Su , Eddie Ka Ho Chiu , Maria Paola Pozzoli , Senzi Li , Giuseppe Colangelo , Simone Alba , Simona Petroni
IPC分类号： H01L21/302
CPC分类号： B08B7/0035 , H01J2237/335 , H01L21/02063 , H01L21/02071
摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.
摘要翻译：本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。第一等离子体清洁可以包括一个或多个步骤。在第一次等离子体清洁之后，执行第一次基于HO的清洁。第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。对于等离子体处理，可以使用RF产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。可以在低温下进行光刻胶去除。

14. 发明申请

US20080210168A1 SINGLE CHAMBER, MULTIPLE TUBE HIGH EFFICIENCY VERTICAL FURNACE SYSTEM 审中-公开
标题翻译：单室，多管高效立式炉系统
公开(公告)号：US20080210168A1
公开(公告)日：2008-09-04
申请号：US12015858
申请日：2008-01-17
申请人： May Su , Yuh-Jia Su
发明人： May Su , Yuh-Jia Su
IPC分类号： C23C16/54 , H01L21/677 , H01L21/203
CPC分类号： H01L21/67109
摘要： A processing system is provided that has a single chamber in communication with multiple vertical processing tubes. The multiple tubes and boats are serviced by a single robotic substrate loading mechanism. A fluid supply feeds a fluid such as a gas or a vapor to at least one selectively isolatable portion of the system of the chamber, the boat loading area or one of the multiple vertical furnace processing tubes. With selective control of the atmosphere in the vertical processing tubes within the processing chamber, the wafers are processed so as to deposit or remove material therefrom. A single control panel and single gas panel servicing the system further adds to overall efficiency.
摘要翻译：提供一种具有与多个垂直处理管连通的单个室的处理系统。多个管和船由单个机器人基底装载机构维修。流体供应源将诸如气体或蒸汽之类的流体供应到室的系统，船装载区域或多个垂直炉加工管中的一个的至少一个选择性隔离的部分。通过选择性地控制处理室内的垂直处理管中的气氛，处理晶片从而沉积或去除材料。为系统提供服务的单个控制面板和单个气体面板进一步提高了整体效率。

15. 发明授权

US06955177B1 Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss 有权
标题翻译：后多晶硅蚀刻光刻胶和聚合物去除方法，最小的栅极氧化物损失
公开(公告)号：US06955177B1
公开(公告)日：2005-10-18
申请号：US10011497
申请日：2001-12-07
申请人： Eddie Chiu , Cindy Wailam Chen , Yuh-Jia Su , Wesley Phillip Graff
发明人： Eddie Chiu , Cindy Wailam Chen , Yuh-Jia Su , Wesley Phillip Graff
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/02071 , B08B7/0035 , H01J37/32192 , H01J2237/335 , H01L21/31138
摘要： The present invention pertains to methods for cleaning semiconductor wafers, more specifically, for removing polymeric and other residues from a wafer using dry plasmas generated with microwave (MW), electromagnetic field (inductively-coupled plasma (ICP)), and radio frequency (RF) energy. First, a wafer is treated by applying a microwave-generated plasma or an inductively-coupled plasma. Second, a radio frequency generated plasma is applied. Each of the microwave-generated plasma and the inductively-coupled plasma is produced from a gas mixture, which includes an oxygen source gas, a fluorine source gas, and a hydrogen source gas. Using such plasmas provides more controllable etch rates than conventional plasmas via control of fluorine concentration in the plasma. Application of a radio frequency generated (preferably oxygen-based) plasma is used for additional photoresist and polymer removal. The use of this two-step approach provides superior wafer cleaning compared to conventional wet and dry clean methods.
摘要翻译：本发明涉及用微波（MW），电磁场（电感耦合等离子体（ICP））和射频（RF）产生的干等离子体来清除半导体晶片的方法，更具体地说，用于从晶片上除去聚合物和其它残余物）能量。首先，通过施加微波产生的等离子体或电感耦合等离子体来处理晶片。第二，施加射频产生的等离子体。微波产生的等离子体和电感耦合等离子体中的每一个由包括氧源气体，氟源气体和氢源气体的气体混合物产生。使用这样的等离子体通过控制等离子体中的氟浓度提供比常规等离子体更可控的蚀刻速率。使用射频产生（优选氧基）等离子体的应用用于额外的光致抗蚀剂和聚合物去除。与传统的湿式和干式清洁方法相比，这种两步法的使用提供了优异的晶片清洁。

16. 发明授权

US06855225B1 Single-tube interlaced inductively coupling plasma source 有权
标题翻译：单管交错电感耦合等离子体源
公开(公告)号：US06855225B1
公开(公告)日：2005-02-15
申请号：US10351032
申请日：2003-01-24
申请人： Yuh-Jia Su , David Lee Chen , Vincent Bernard Decaux
发明人： Yuh-Jia Su , David Lee Chen , Vincent Bernard Decaux
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/321
摘要： A plasma source for use in, for example, semiconductor processing contains a radio-frequency generator, an impedance matching network, and a coil that encloses a tube. The coil is bifilar, i.e., the turns of one are interlaced with the turns of a second winding. The matching network supplies only a single coil in the plasma source, unlike conventional arrangements wherein a single matching network supplies multiple coils in the plasma source.
摘要翻译：用于例如半导体处理的等离子体源包括射频发生器，阻抗匹配网络和围绕管的线圈。线圈是双极的，即一个线圈与第二绕组的匝交错。匹配网络仅提供等离子体源中的单个线圈，这与传统布置不同，其中单个匹配网络在等离子体源中提供多个线圈。

17. 发明授权

US5893757A Tapered profile etching method 失效
标题翻译：锥形轮廓蚀刻方法
公开(公告)号：US5893757A
公开(公告)日：1999-04-13
申请号：US783819
申请日：1997-01-13
申请人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law
发明人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/32136 , H01L21/32137
摘要： A method of etching an article having a substrate, an etchable film and a mask layer having a pattern formed therein includes the step of exposing the article to an etchant gas mixture which includes a halogen-containing gas and an inert gas. An etching profile is formed which is substantially smooth across an interface between the etchable film and the mask layer. The method is particularly useful in producing components of articles such as flat-panel displays.
摘要翻译：蚀刻具有衬底，可蚀刻膜和具有形成在其中的图案的掩模层的制品的方法包括将制品暴露于包括含卤素气体和惰性气体的蚀刻剂气体混合物的步骤。形成蚀刻轮廓，其基本上平滑地跨过可蚀刻膜和掩模层之间的界面。该方法在制造诸如平板显示器的物品的部件中特别有用。

18. 发明授权

US5607602A High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas 失效
标题翻译：通过氢和卤素自由基（如衍生自HCl气体）对铟和锡氧化物进行高速干蚀刻
公开(公告)号：US5607602A
公开(公告)日：1997-03-04
申请号：US475709
申请日：1995-06-07
申请人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law , Haruhiro Goto
发明人： Yuh-Jia Su , Yuen-Kui Wong , Kam S. Law , Haruhiro Goto
IPC分类号： C01G15/00 , C01G19/02 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/461 , H01L31/18 , B44C1/22
CPC分类号： H01L31/1884 , H01L21/32136 , Y02E10/50
摘要： An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.
摘要翻译：公开了一种在单次连续步骤中以高于80安培/分钟的速率蚀刻通过透明电极（ITO）的材料层的RIE方法和装置。室压力至少保持在30毫托。包括卤素氢化物如HCl的反应性气体单独使用或与另一种反应气体如Cl 2组合使用。监测等离子体诱导的反应产物和/或反应物的光排放，以确定有效蚀刻的时间点。

19. 发明授权

US5528451A Erosion resistant electrostatic chuck 失效
标题翻译：防腐静电卡盘
公开(公告)号：US5528451A
公开(公告)日：1996-06-18
申请号：US333455
申请日：1994-11-02
申请人： Yuh-Jia Su
发明人： Yuh-Jia Su
IPC分类号： B23Q3/15 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833
摘要： An erosion resistant electrostatic chuck (20) comprises an electrostatic member (22) supported by a base (24), the base (24) having a peripheral edge (26). A cutaway segment (28) in the peripheral edge (26) of the base holds an insulated electrical connector (30) for electrically connecting the electrostatic member (22) on the chuck (20) to a voltage supply (62)in a process chamber (36). A removable plug (40) is in the cutaway (28), and covers a portion of the insulated electrical connector (30) for protecting the electrical connector from erosion in the process chamber (36). Preferably, the removable plug (40)is substantially L-shaped with the bottom leg of the "L" in the bottom of the cutaway (28), and the upstanding leg of the "L" abutting against the side of the cutaway (28).
摘要翻译：防侵蚀静电卡盘（20）包括由基座（24）支撑的静电部件（22），所述基座（24）具有周边边缘（26）。基座的周边边缘（26）中的切割部分（28）保持用于将卡盘（20）上的静电部件（22）电连接到处理室中的电压源（62）的绝缘电连接器（30）（36）。可拆卸插头（40）位于切口（28）中，并且覆盖绝缘电连接器（30）的一部分，用于保护电连接器免受处理室（36）中的侵蚀。优选地，可拆卸插头（40）在切口（28）的底部中具有“L”的底部的大致L形，并且“L”的直立腿抵靠在切口（28）的一侧）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式