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11. 发明申请

US20070246743A1 Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed 有权
标题翻译：形成相变材料层的方法，使用其形成相变存储器件的方法，以及如此形成的相变存储器件
公开(公告)号：US20070246743A1
公开(公告)日：2007-10-25
申请号：US11785807
申请日：2007-04-20
申请人： Sung-Lae Cho , Choong-Man Lee , Jin- Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Sung-Lae Cho , Choong-Man Lee , Jin- Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： H01L27/10
CPC分类号： H01L45/1233 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.
摘要翻译：形成相变材料层的方法包括制备具有绝缘体和导体的衬底，将衬底装载到工艺外壳中，将沉积气体注入工艺外壳中，以选择性地在所述工艺外壳的暴露表面上形成相变材料层导体，以及从工艺外壳卸载衬底，其中工艺外壳中的沉积气体的寿命短于沉积气体通过热能反应的时间。

12. 发明授权

US08034683B2 Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed 有权
标题翻译：形成相变材料层的方法，使用其形成相变存储器件的方法，以及如此形成的相变存储器件
公开(公告)号：US08034683B2
公开(公告)日：2011-10-11
申请号：US11785807
申请日：2007-04-20
申请人： Sung-Lae Cho , Choong-Man Lee , Jin-Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Sung-Lae Cho , Choong-Man Lee , Jin-Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： H01L21/44
CPC分类号： H01L45/1233 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.
摘要翻译：形成相变材料层的方法包括制备具有绝缘体和导体的衬底，将衬底装载到工艺外壳中，将沉积气体注入工艺外壳中，以选择性地在所述工艺外壳的暴露表面上形成相变材料层导体，以及从工艺外壳卸载衬底，其中工艺外壳中的沉积气体的寿命短于沉积气体通过热能反应的时间。

13. 发明授权

US07855145B2 Gap filling method and method for forming semiconductor memory device using the same 失效
标题翻译：用于形成半导体存储器件的间隙填充方法和方法
公开(公告)号：US07855145B2
公开(公告)日：2010-12-21
申请号：US11783975
申请日：2007-04-13
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： H01L21/44
CPC分类号： C23C16/045 , C23C16/45523 , C23C16/5096 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要翻译：一种间隙填充方法和一种形成存储器件的方法，包括在衬底上形成绝缘层，在绝缘层中形成间隙区域，并重复形成相变材料层，并蚀刻相变材料层以形成相在间隙区域中改变材料层图案。

14. 发明申请

US20070246439A1 Gap filling method, method for forming semiconductor memory device using the same, and semiconductor device having a filled gap 失效
标题翻译：间隙填充方法，使用其的半导体存储器件的形成方法以及具有填充间隙的半导体器件
公开(公告)号：US20070246439A1
公开(公告)日：2007-10-25
申请号：US11783975
申请日：2007-04-13
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： B44C1/22 , C03C25/68 , C23F1/00
CPC分类号： C23C16/045 , C23C16/45523 , C23C16/5096 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要翻译：一种间隙填充方法和一种形成存储器件的方法，包括在衬底上形成绝缘层，在绝缘层中形成间隙区域，并重复形成相变材料层，并蚀刻相变材料层以形成相在间隙区域中改变材料层图案。

15. 发明授权

US07807497B2 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices 失效
标题翻译：相变材料层，其形成方法，具有该相变材料层的相变存储器件，以及形成相变存储器件的方法
公开(公告)号：US07807497B2
公开(公告)日：2010-10-05
申请号：US11826048
申请日：2007-07-12
申请人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
发明人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： C23C16/45523 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.
摘要翻译：示例性实施例可以提供相变材料层以及通过在反应室中产生包括氦和/或氩的等离子体来形成相变材料层的方法和使用该相变材料层的装置，通过引入在物体上形成第一材料层包括第一材料的第一源气体，通过将包括第二材料的第二源气体引入反应室，在物体上形成第一复合材料层，通过引入第三源气体在第一复合材料层上形成第三材料层包括第三材料，并且通过引入包括第四材料的第四源气体，在所述第一复合材料层上形成第二复合材料层。示例性实施例包括碳的相变材料层可以在较低温度下在氦/氩等离子体环境下更容易地和/或快速地形成，方法是提供用于各种进料时间的源气体。示例性实施例还可以包括使用相变存储器层的存储器件。

16. 发明授权

US07838326B2 Methods of fabricating semiconductor device including phase change layer 有权
标题翻译：制造包括相变层的半导体器件的方法
公开(公告)号：US07838326B2
公开(公告)日：2010-11-23
申请号：US12405408
申请日：2009-03-17
申请人： Jin-Il Lee , Sung-Lae Cho , Ik-Soo Kim , Hye-Young Park , Do-Hyung Kim , Dong-Hyun Im
发明人： Jin-Il Lee , Sung-Lae Cho , Ik-Soo Kim , Hye-Young Park , Do-Hyung Kim , Dong-Hyun Im
IPC分类号： H01L21/00
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1616
摘要： Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.
摘要翻译：提供制造包括相变层的半导体器件的方法。方法可以包括在衬底上形成电介质层，在电介质层中形成开口，并在具有开口的衬底上沉积相变层，该相变层含有将热处理工艺的工艺温度降低到低于相变层的熔点。方法可以包括通过包括低于相变层的熔点的工艺温度的热处理工艺将一部分相变层从开口外部迁移到开口中。

17. 发明申请

US20080017841A1 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices 失效
标题翻译：相变材料层，其形成方法，具有该相变材料层的相变存储器件，以及形成相变存储器件的方法
公开(公告)号：US20080017841A1
公开(公告)日：2008-01-24
申请号：US11826048
申请日：2007-07-12
申请人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
发明人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
IPC分类号： H01L21/20 , H01L47/00
CPC分类号： C23C16/45523 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.
摘要翻译：示例性实施例可以提供相变材料层以及通过在反应室中产生包括氦和/或氩的等离子体来形成相变材料层的方法和使用该相变材料层的装置，通过引入在物体上形成第一材料层包括第一材料的第一源气体，通过将包括第二材料的第二源气体引入反应室，在物体上形成第一复合材料层，通过引入第三源气体在第一复合材料层上形成第三材料层包括第三材料，并且通过引入包括第四材料的第四源气体，在所述第一复合材料层上形成第二复合材料层。示例性实施例包括碳的相变材料层可以在较低温度下在氦/氩等离子体环境下更容易地和/或快速地形成，方法是提供用于各种进料时间的源气体。示例性实施例还可以包括使用相变存储器层的存储器件。

18. 发明申请

US20090280599A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATION 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090280599A1
公开(公告)日：2009-11-12
申请号：US12434721
申请日：2009-05-04
申请人： Dong-Hyun Im , Do-Hyung Kim , Hye-Young Park , Sung-Lae Cho , Jin-Il Lee
发明人： Dong-Hyun Im , Do-Hyung Kim , Hye-Young Park , Sung-Lae Cho , Jin-Il Lee
IPC分类号： H01L21/00
CPC分类号： H01L45/1691 , H01L45/06 , H01L45/124 , H01L45/126 , H01L45/144 , H01L45/1616
摘要： A phase change memory device includes a bottom electrode on a substrate, a phase change material pattern on the bottom electrode, and a top electrode on the phase change material pattern. The phase change material pattern includes at least 50 percent antimony (Sb).
摘要翻译：相变存储器件包括衬底上的底电极，底电极上的相变材料图案和相变材料图案上的顶电极。相变材料图案包括至少50％的锑（Sb）。

19. 发明申请

US20090233421A1 Methods of Fabricating Semiconductor Device Including Phase Change Layer 有权
标题翻译：制造包括相变层的半导体器件的方法
公开(公告)号：US20090233421A1
公开(公告)日：2009-09-17
申请号：US12405408
申请日：2009-03-17
申请人： Jin-Il Lee , Sung-Lae Cho , Ik-Soo Kim , Hye-Young Park , Do-Hyung Kim , Dong-Hyun Im
发明人： Jin-Il Lee , Sung-Lae Cho , Ik-Soo Kim , Hye-Young Park , Do-Hyung Kim , Dong-Hyun Im
IPC分类号： H01L21/20
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1616
摘要： Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.
摘要翻译：提供制造包括相变层的半导体器件的方法。方法可以包括在衬底上形成电介质层，在电介质层中形成开口，并在具有开口的衬底上沉积相变层，该相变层含有将热处理工艺的工艺温度降低到低于相变层的熔点。方法可以包括通过包括低于相变层的熔点的工艺温度的热处理工艺将一部分相变层从开口外部迁移到开口中。

20. 发明授权

US07569417B2 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device 有权
标题翻译：形成相变材料层的方法，相变存储单元的制造方法以及相变半导体存储器件的制造方法
公开(公告)号：US07569417B2
公开(公告)日：2009-08-04
申请号：US11353129
申请日：2006-02-14
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.
摘要翻译：公开了可用于半导体存储器件的相变材料层及其形成方法。该方法包括在具有设置在其中的基板的腔室中形成等离子体，提供包括锗基材料的第一源气体，以在将等离子体保持在腔室中的同时在基板上形成包括基于锗的材料的第一层，从而提供第二源气体，其包括与第一层反应的碲基材料，以在衬底上形成包含锗 - 碲复合材料的第一复合材料层，同时将等离子体保持在室中，提供包括锑基材料的第三源气体，以形成第二层，包括在第一复合材料层上的锑基材料，同时将等离子体保持在室中，并且提供包括碲基材料的第四源气体，以与包含锑基材料的第二层反应以形成第二复合材料层，锑 - 碲复合材料在第一层复合材料上的铺设 r。因此，可以在低温和功率下形成相变材料层以具有期望的电特性。

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