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11. 发明授权

US4864246A Mobile automatic volume control apparatus 失效
标题翻译：移动自动音量控制装置
公开(公告)号：US4864246A
公开(公告)日：1989-09-05
申请号：US242256
申请日：1988-09-09
申请人： Masayuki Kato , Shinjiro Kato , Fumio Tamura
发明人： Masayuki Kato , Shinjiro Kato , Fumio Tamura
IPC分类号： H03G3/32
CPC分类号： H03G3/32
摘要： An automatic volume control apparatus for use in a mobile audio apparatus in which a detection output from a noise detection section is compared with a control output applied to a volume control section, and a capacitor inserted between a control signal input terminal of the volume control section and a reference voltage point is charged/discharged by a current source section with a constant current on the basis of the output of the comparator to thereby make it possible to make the change of volume constant or linear relative to the change of noise level. Also, a control signal for a volume controller is obtained by subtracting a quantity of logarithmic change of an audio signal detection signal obtained from an audio signal detection section relative to a reference value from a value obtained by amplifying, with an amplification factor in a range of 1.5 to 2.5, a quantity of logarithmic change of a noise detection signal obtained from a noise detection section relative to a reference value, whereby the correspondence between levels of low-frequency components of, for example, 10 Hz or less and audible frequency components of in-vehicle noise becomes higher so that it is possible to perform more natural volume control.
摘要翻译：一种用于移动音频装置的自动音量控制装置，其中将来自噪声检测部分的检测输出与施加到音量控制部分的控制输出进行比较，以及插入在音量控制部分的控制信号输入端子之间的电容器并且基于比较器的输出，通过恒定电流由电流源部分对参考电压点进行充电/放电，从而使得可以使体积的变化相对于噪声电平的变化而变为恒定或线性。此外，通过从放大系数的范围中减去从音频信号检测部分获得的音频信号检测信号相对于参考值的对数变化量，从放大获得的值中获得音量控制器的控制信号，为1.5〜2.5，相对于参考值从噪声检测部获得的噪声检测信号的对数变化量，由此例如为10Hz以下的低频成分的电平与可听频率成分的车载噪声变高，从而可以进行更自然的音量控制。

12. 发明申请

US20140300522A1 COIL ANTENNA, COIL ANTENNA-MOUNTED STRUCTURE, COIL ANTENNA MANUFACTURING METHOD, COIL ANTENNA-MOUNTED STRUCTURE MANUFACTURING METHOD 审中-公开
标题翻译：线圈天线，线圈天线安装结构，线圈天线制造方法，线圈天线安装结构制造方法
公开(公告)号：US20140300522A1
公开(公告)日：2014-10-09
申请号：US14355712
申请日：2012-10-23
申请人： Shinjiro Kato , Shinichi Kojima , Tatsuya Fujii
发明人： Shinjiro Kato , Shinichi Kojima , Tatsuya Fujii
IPC分类号： H01Q7/06
CPC分类号： H01Q7/06 , H01Q7/08 , Y10T29/49016
摘要： A coil antenna has a core that is plate-shaped and includes a magnetic material; a coil wire that is wound around the core; a first insulating layer that is arranged on a surface of the core, the insulating layer being arranged to cover the coil wire and have a flat surface opposite the core; a second insulating layer that is arranged on a rear face opposite the surface of the core, the second insulating layer being arranged to cover the coil wire and to have a flat surface opposite the core; a flat first metal layer arranged on the flat surface of the first insulating layer; and a flat second metal layer arranged on the flat surface of the second insulating layer.
摘要翻译：线圈天线具有板状并包括磁性材料的芯体; 缠绕在芯上的线圈线; 布置在所述芯的表面上的第一绝缘层，所述绝缘层被布置成覆盖所述线圈线并且具有与所述芯相对的平坦表面; 第二绝缘层，其布置在与所述芯的表面相对的后表面上，所述第二绝缘层被布置成覆盖所述线圈线并具有与所述芯相对的平坦表面; 布置在所述第一绝缘层的平坦表面上的平坦的第一金属层; 以及布置在第二绝缘层的平坦表面上的平坦的第二金属层。

13. 发明授权

US08084833B2 Semiconductor device 有权
公开(公告)号：US08084833B2
公开(公告)日：2011-12-27
申请号：US12807853
申请日：2010-09-15
申请人： Shinjiro Kato
发明人： Shinjiro Kato
IPC分类号： H01L21/76
CPC分类号： H01L29/0847 , H01L29/402 , H01L29/42356 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： Provided is a LOCOS offset MOS field-effect transistor in which a first lightly-doped N-type drain offset region with a LOCOS oxide film and a second lightly-doped N-type drain offset region without a LOCOS oxide film are formed in a drain-side offset region, and both the regions are covered with a gate electrode. Provision of the first lightly-doped N-type drain offset region mitigates an electric field applied to the first lightly-doped N-type drain offset region to increase a breakdown voltage. Provision of the second lightly-doped N-type drain offset region increases carriers within the second lightly-doped N-type drain offset region to obtain a high current drivability.

14. 发明申请

US20050169488A1 Acoustic characteristic adjustment device 审中-公开
标题翻译：声学特性调节装置
公开(公告)号：US20050169488A1
公开(公告)日：2005-08-04
申请号：US11024770
申请日：2004-12-30
申请人： Shinjiro Kato , Akira Shimizu , Moriyuki Oshima , Mitsuo Nakazato , Shigeki Kobayashi , Kunio Toyoda , Koji Takano , Shokichiro Hino , Tomohiko Endo , Kouichi Tsuchiya
发明人： Shinjiro Kato , Akira Shimizu , Moriyuki Oshima , Mitsuo Nakazato , Shigeki Kobayashi , Kunio Toyoda , Koji Takano , Shokichiro Hino , Tomohiko Endo , Kouichi Tsuchiya
IPC分类号： H04R3/04 , H03H17/02 , H04S3/00 , H04S7/00 , H03G5/00 , H03G3/00
CPC分类号： H04S7/302 , H04S3/00 , H04S7/307 , H04S7/40
摘要： An improved acoustic characteristic adjustment device comprises signal processing units including high frequency convolution arithmetic sections, low frequency convolution arithmetic sections, and delay sections. The device further comprises: an operation section from which a listener inputs a target characteristic in order to adjust a desired acoustic characteristic; an impulse characteristic control section; and a delay time control section. The impulse characteristic control section calculates impulse response data to effect convolution arithmetics. The delay time control section calculates alignment delay times necessary for sounds emitted from the speakers to reach a listening position. The delay time control section also calculates correction times for compensating various phase deviations. Times obtained by correcting the alignment delay times with the correction times are set as the delay times of the delay sections, respectively.
摘要翻译：改进的声学特性调整装置包括包括高频卷积运算部分，低频卷积运算部分和延迟部分的信号处理单元。该装置还包括：一个操作部分，一个听众输入一个目标特性以便调整一个期望的声学特性; 脉冲特性控制部; 和延迟时间控制部。脉冲特性控制部分计算脉冲响应数据以进行卷积算术。延迟时间控制部分计算从扬声器发出的声音到达聆听位置所需的对准延迟时间。延迟时间控制部分还计算用于补偿各种相位偏差的校正时间。通过用校正时间校正对准延迟时间而获得的时间分别被设置为延迟部分的延迟时间。

15. 发明授权

US5119420A Device for correcting a sound field in a narrow space 失效
标题翻译：用于校正窄幅空间中的声场的装置
公开(公告)号：US5119420A
公开(公告)日：1992-06-02
申请号：US540248
申请日：1990-06-19
申请人： Shinjiro Kato , Hisashi Kihara , Fumio Tamura , Shuichi Mori
发明人： Shinjiro Kato , Hisashi Kihara , Fumio Tamura , Shuichi Mori
IPC分类号： G10K15/12 , H03G5/02 , H04S1/00
CPC分类号： G10K15/12 , H04S1/002
摘要： A sound field correcting device provides for a natural acoustic localization of the outputs of right and left channels of an acoustic sound source. At least one of right and left channel audio signals is delayed to create a phase difference between the right and left channel audio signals, and to thus dislocate a sound in such a way that a listener not positioned equidistant between right and left channel sound sources may perceive the two channels equally.
摘要翻译：声场校正装置提供声音声源的右声道和左声道的输出的自然声学定位。右声道和左声道音频信号中的至少一个被延迟以在右声道和左声道音频信号之间产生相位差，并且因此使得声音不会在左右声道声源之间等距定位的方式脱位同时感知两个通道。

16. 发明授权

US08551854B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08551854B2
公开(公告)日：2013-10-08
申请号：US13409234
申请日：2012-03-01
申请人： Shinjiro Kato , Hirofumi Harada
发明人： Shinjiro Kato , Hirofumi Harada
IPC分类号： H01L29/8605
CPC分类号： H01L28/24
摘要： In a method of manufacturing a semiconductor device, a barrier metal film and an aluminum metal film are formed on an insulating film on a semiconductor substrate. Two aluminum electrodes are formed in parallel with each other by patterning the barrier metal film and the aluminum metal film. The aluminum metal film in a region of part of each of the two aluminum electrodes are selectively removed to form two single-layer barrier metal electrodes separated from each other. A resistor is formed between the two single-layer barrier metal electrodes so as to electrically connect the two single-layer barrier metal electrodes to each other.
摘要翻译：在制造半导体器件的方法中，在半导体衬底上的绝缘膜上形成阻挡金属膜和铝金属膜。通过图案化阻挡金属膜和铝金属膜，两个铝电极彼此平行地形成。选择性地去除两个铝电极中的每一个的一部分区域中的铝金属膜以形成彼此分离的两个单层势垒金属电极。在两个单层阻挡金属电极之间形成电阻器，以将两个单层阻挡金属电极彼此电连接。

17. 发明授权

US08237225B2 Semiconductor device for electrostatic discharge protection 有权
标题翻译：用于静电放电保护的半导体器件
公开(公告)号：US08237225B2
公开(公告)日：2012-08-07
申请号：US12882874
申请日：2010-09-15
申请人： Shinjiro Kato
发明人： Shinjiro Kato
IPC分类号： H01L23/62
CPC分类号： H01L27/0251 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device for electrostatic discharge protection capable of protecting an inner circuit from both noises of an overcurrent noise of an ESD and an overcurrent noise of a latch-up test while achieving size reduction, by sharing a guard ring formed in a periphery of an ESD protection element with a cathode of a latch-up protection diode for protecting the inner circuit from the overcurrent noise of the latch-up test.
摘要翻译：提供一种用于静电放电保护的半导体器件，其能够通过共享形成在周边的保护环来保护内部电路免受ESD的过电流噪声的噪声和闩锁测试的过电流噪声，同时实现尺寸减小具有用于保护内部电路免受闩锁测试的过电流噪声的闩锁保护二极管的阴极的ESD保护元件。

18. 发明授权

US08063445B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08063445B2
公开(公告)日：2011-11-22
申请号：US12462909
申请日：2009-08-11
申请人： Shinjiro Kato , Naoto Saito
发明人： Shinjiro Kato , Naoto Saito
IPC分类号： H01L29/76 , H01L29/788
CPC分类号： H01L29/0847 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： Provided is a semiconductor device which includes a metal oxide semiconductor (MOS) transistor having high driving performance and high withstanding voltage with a thick gate oxide film. In the local oxidation-of-silicon (LOCOS) offset MOS transistor having high withstanding voltage, in order to prevent a gate oxide film (6) formed on a channel formation region (7) from being etched at a time of removing the gate oxide film (6) with a polycrystalline silicon gate electrode (8) being used as a mask to form a second conductivity type high concentration source region (4) and a second conductivity type high concentration drain region (5), a source field oxide film (14) is formed also on a source side of the channel formation region (7), and in addition, a length of a second conductivity type high concentration source field region (13) is optimized. Accordingly, it is possible to obtain a MOS transistor having high driving performance and high withstanding voltage with a thick gate oxide film.
摘要翻译：提供一种半导体器件，其包括具有高驱动性能的金属氧化物半导体（MOS）晶体管和具有较厚栅极氧化膜的高耐压。在具有高耐受电压的局部氧化硅（LOCOS）偏移MOS晶体管中，为了防止形成在沟道形成区域（7）上的栅极氧化膜（6）在去除栅极氧化物时被蚀刻使用多晶硅栅电极（8）作为掩模的膜（6）形成第二导电型高浓度源区（4）和第二导电型高浓度漏区（5），源场氧化膜 14）也形成在沟道形成区域（7）的源极侧，此外，第二导电型高浓度源极场区域（13）的长度被优化。因此，可以通过厚栅极氧化膜获得具有高驱动性能和高耐受电压的MOS晶体管。

19. 发明申请

US20100044765A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100044765A1
公开(公告)日：2010-02-25
申请号：US12545431
申请日：2009-08-21
申请人： Shinjiro Kato , Jun Osanai
发明人： Shinjiro Kato , Jun Osanai
IPC分类号： H01L29/94
CPC分类号： H01L29/945 , H01L29/66181
摘要： Provided is a metal oxide semiconductor (MOS) capacitor, in which trenches (3) are formed in a charge accumulation region (6) of a p-type silicon substrate (1) to reduce a contact area between the p-type silicon substrate (1) and a lightly doped n-type well region (2), thereby reducing a leak current from the lightly doped n-type well region (2) to the p-type silicon substrate (1).
摘要翻译：提供一种金属氧化物半导体（MOS）电容器，其中沟槽（3）形成在p型硅衬底（1）的电荷累积区域（6）中，以减小p型硅衬底（1）的接触面积 1）和轻掺杂的n型阱区（2），从而减少从轻掺杂n型阱区（2）到p型硅衬底（1）的漏电流。

20. 发明授权

US5241605A Tone control apparatus for front and rear channels 失效
标题翻译：前后通道音调控制装置
公开(公告)号：US5241605A
公开(公告)日：1993-08-31
申请号：US599052
申请日：1990-10-17
申请人： Shuichi Mori , Hisashi Kihara , Shinjiro Kato , Fumio Tamura
发明人： Shuichi Mori , Hisashi Kihara , Shinjiro Kato , Fumio Tamura
IPC分类号： H03G5/02 , H03G5/04 , H04R3/12 , H04S7/00
CPC分类号： H03G5/04 , H04S7/307 , H04R2499/13
摘要： A tone control apparatus for a sound system processing audio signals of front and rear channels. By providing front and rear tone control means for independently effecting the tone control in both of the front and rear channels, it is possible to prevent the generation of distortions in the front acoustic output when the control for raising the rear bass level is effected. Also, a tone control balance between the front and rear channels in a vehicle cabin, for example, can be set appropriately.
摘要翻译：一种用于处理前和后声道的音频信号的音响系统的音调控制装置。通过提供用于独立地实现前通道和后通道中的音调控制的前后音调控制装置，当进行用于提高后低音电平的控制时，可以防止在前声输出中产生失真。此外，例如可以适当地设定车厢内的前后通道之间的音调控制平衡。

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