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11. 发明授权

US4841044A Cephalosporin derivatives 失效
标题翻译：头孢菌素衍生物
公开(公告)号：US4841044A
公开(公告)日：1989-06-20
申请号：US943037
申请日：1986-12-18
申请人： Yoshiaki Watanabe , Chihiro Yokoo , Masami Goi , Akira Onodera , Mitsuo Murata , Hiroshi Fukushima , Minoru Taguchi , Kaoru Sota
发明人： Yoshiaki Watanabe , Chihiro Yokoo , Masami Goi , Akira Onodera , Mitsuo Murata , Hiroshi Fukushima , Minoru Taguchi , Kaoru Sota
IPC分类号： A61K31/545 , C07D501/36 , C07D501/59
CPC分类号： C07D501/59
摘要： Cephalosporin derivatives represented by the general formula ##STR1## wherein R is a hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R' is a hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 5 or 6 carbon atoms or a benzyl group, or R and R' together with the nitrogen atom to which they are attached form a tetrahydropyridinyl group, a morpholinyl group or pyrroridinyl group, and the non-toxic salts thereof are disclosed. These compounds are useful as antibacterial agents.
摘要翻译：其中R为氢原子或碳原子数为1〜4的低级烷基，R'为氢原子，碳原子数1〜4的低级烷基，，具有5或6个碳原子的环烷基或苄基，或R和R'与它们所连接的氮原子一起形成四氢吡啶基，吗啉基或吡咯烷基，其无毒盐是披露这些化合物可用作抗菌剂。

12. 发明申请

US20060023153A1 Circuit film and display device including the same 有权
标题翻译：电路膜和显示装置包括它们
公开(公告)号：US20060023153A1
公开(公告)日：2006-02-02
申请号：US11188995
申请日：2005-07-25
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： G02F1/1343
CPC分类号： G02F1/13452
摘要： A circuit film comprises a first circuit formed on a film substrate for outputting a driving signal to a display device, and a plurality of input lines formed on the film substrate. The display device includes a display panel which has first and second signal lines, a second-circuit film which has a second circuit for outputting a driving signal to the second signal line, and a control board for controlling the first and second circuits. The plurality of input lines include a first input line for inputting a control signal to the first circuit and a second input line for inputting a control signal to the second circuit. The film substrate is connected to the control board and the display panel such that a driving signal is input from the control board to the first and second circuits through the first and second input lines, respectively.
摘要翻译：电路膜包括形成在薄膜基板上的用于向显示装置输出驱动信号的第一电路和形成在薄膜基板上的多条输入线。显示装置包括具有第一和第二信号线的显示面板，具有用于向第二信号线输出驱动信号的第二电路的第二电路薄膜和用于控制第一和第二电路的控制板。多个输入线包括用于向第一电路输入控制信号的第一输入线和用于向第二电路输入控制信号的第二输入线。薄膜基板连接到控制板和显示面板，使得驱动信号分别通过第一和第二输入线从控制板输入到第一和第二电路。

13. 发明授权

US6156801A 2-phenoxyaniline derivatives 失效
标题翻译： 2-苯氧基苯胺衍生物
公开(公告)号：US6156801A
公开(公告)日：2000-12-05
申请号：US381039
申请日：1999-09-15
申请人： Tomomi Ota , Misa Nakanishi , Minoru Taguchi , Kazuyuki Tomisawa
发明人： Tomomi Ota , Misa Nakanishi , Minoru Taguchi , Kazuyuki Tomisawa
IPC分类号： C07C217/90 , C07C225/22 , C07C233/43 , C07C235/34 , C07C255/59 , A61K31/136 , A61K31/167 , A61K31/277 , C07C237/40 , C07C255/58
CPC分类号： C07C225/22 , C07C217/90 , C07C233/43 , C07C235/34 , C07C255/59 , C07C2101/02
摘要： A 2-phenoxyaniline derivative represented by the formula: ##STR1## wherein R.sup.1 is a hydrogen atom, an amino group or an NHCOR.sup.3 group, R.sup.2 is a halogen atom, an amino group, a cyano group, a C.sub.1-6 alkyl group, a C.sub.1-3 perfluoroalkyl group, an NHCOR.sup.3 group, a CH.sub.2 OR.sup.4 group, an OCH.sub.2 R.sup.5 group or a COR.sup.6 group, R.sup.3 is a C.sub.1-6 alkyl group, R.sup.4 is a hydrogen atom or a C.sub.1-6 alkyl group, R.sup.5 is a hydrogen atom, a C.sub.1-6 alkyl group, a C.sub.1-5 aminoalkyl group, a C.sub.2-7 alkoxy-carbonyl group or a carbamoyl group, and R.sup.6 is a C.sub.1-6 alkyl group or a C.sub.3-8 cycloalkyl group which is unsubstituted or substituted by a halogen atom, an amino group, a cyano group or a straight or branched C.sub.1-6 alkyl group; or a pharmaceutically acceptable salt thereof.
摘要翻译： PCT No.PCT / JP98 / 01367 Sec。 371日期1999年9月15日 102（e）1999年9月15日PCT 1998年3月26日PCT PCT。第WO98 / 43943号公报日期：1998年10月8日由下式表示的2-苯氧基苯胺衍生物：其中R1为氢原子，氨基或NHCOR3基，R2为卤素原子，氨基，氰基，C1-6烷基，C1-3全氟烷基，NHCOR3基，CH2OR4基，OCH2R5基或COR6基，R3是C1-6烷基，R4是氢原子或C1-6烷基，R5是氢原子，C1-6烷基，C1-5氨基烷基，C2-7烷氧基 - 羰基或氨基甲酰基，R6是未取代或取代的C1-6烷基或C3-8环烷基通过卤素原子，氨基，氰基或直链或支链C 1-6烷基; 或其药学上可接受的盐。

14. 发明授权

US5268250A Electrophotographic photoreceptor and method of manufacturing comprising simultaneously vapor depositing charge generating material and oligomer 失效
标题翻译：电子照相感光体及制造方法同时气相沉积电荷产生材料和低聚物
公开(公告)号：US5268250A
公开(公告)日：1993-12-07
申请号：US870229
申请日：1992-04-20
申请人： Minoru Matsuo , Minoru Taguchi
发明人： Minoru Matsuo , Minoru Taguchi
IPC分类号： G03G5/047 , G03G5/05 , G03G15/02 , G03G5/00
CPC分类号： G03G5/0525 , G03G5/047 , G03G5/0564
摘要： Disclosed herein is an electrophotographic photoreceptor comprising a charge generation layer and a charge transport layer disposed in lamination on a substrate, in which at least one of said charge generation layer and said charge transport layer is a vacuum vapor deposition film containing a binding polymer.
摘要翻译：本文公开了一种电子照相感光体，其包含电荷产生层和层叠于基板上的电荷输送层，其中至少一个所述电荷产生层和所述电荷输送层是含有结合聚合物的真空气相沉积膜。

15. 发明授权

US5241208A Semiconductor device comprising an analogue element and a digital element 失效
标题翻译：包括模拟元件和数字元件的半导体器件
公开(公告)号：US5241208A
公开(公告)日：1993-08-31
申请号：US755784
申请日：1991-09-06
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： H01L21/822 , H01L21/8238 , H01L27/02 , H01L27/04 , H01L27/088 , H01L27/092 , H01L29/51
CPC分类号： H01L29/513 , H01L27/088 , H01L29/518 , H01L27/0203
摘要： A semiconductor device, comprises a semiconductor substrate, a digital element part as a pair of MOS transistors formed on the semiconductor substrate; and an analog element part as a pair of MOS transistors formed on the semiconductor substrate, wherein a gate insulator film of the analogue element part comprises at least a first silicon oxide film and a silicon nitride film, a gate insulator film of the digital element part comprises a second silicon oxide, and the gate insulation film of the analogue element part is thicker than the gate insulation film of the digital element part. A fabrication method of the semiconductor device also is described.
摘要翻译：一种半导体器件，包括半导体衬底，形成在半导体衬底上的一对MOS晶体管的数字元件部分; 以及形成在所述半导体基板上的作为一对MOS晶体管的模拟元件部，所述模拟元件部的栅极绝缘膜至少包含第一氧化硅膜和氮化硅膜，所述数字元件部的栅极绝缘膜包括第二氧化硅，并且模拟元件部分的栅极绝缘膜比数字元件部分的栅极绝缘膜厚。还描述了半导体器件的制造方法。

16. 发明授权

US4994888A Monolithic semiconductor device having CCD, bipolar and MOS structures 失效
标题翻译：具有CCD，双极和MOS结构的单片半导体器件
公开(公告)号：US4994888A
公开(公告)日：1991-02-19
申请号：US525040
申请日：1990-05-18
申请人： Minoru Taguchi , Kazuo Kihara
发明人： Minoru Taguchi , Kazuo Kihara
IPC分类号： H01L21/339 , H01L21/8249 , H01L27/06 , H01L27/105 , H01L29/762
CPC分类号： H01L27/0623 , H01L27/1057
摘要： A semiconductor device comprising a semiconductor chip formed of a substrate of a first conductivity type and an epitaxial layer of the first conductivity type formed on the substrate, a charge transfer device section formed in the epitaxial layer and driven by a given clock, and a preset region of a second conductivity type formed adjacent to the charge transfer device section in the semiconductor ship. The preset region includes a first layer of the second conductivity type formed in a boundary portion between the substrate and the epitaxial layer, a second layer of the second conductivity type formed on the first layer the epitaxial layer, and a third layer of the second conductivity type formed on the second layer in the epitaxial layer to reach the surface of the substrate. The maximum value of the second conductivity type impurity concentration of the third layer is set smaller than the maximum value of the second conductivity type impurity concentration of the first layer. A bipolar transistor section is formed in the third layer.

17. 发明授权

US4554046A Method of selectively etching high impurity concentration semiconductor layer 失效
标题翻译：选择性蚀刻高杂质浓度半导体层的方法
公开(公告)号：US4554046A
公开(公告)日：1985-11-19
申请号：US652178
申请日：1984-09-19
申请人： Minoru Taguchi , Gen Sasaki
发明人： Minoru Taguchi , Gen Sasaki
IPC分类号： H01L21/306 , H01L21/308 , H01L21/3213 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/308 , H01L21/30604 , H01L21/32134
摘要： A method for selectively etching a high impurity concentration semiconductor layer by making use of a difference in impurity concentration is disclosed. According to this method, the high impurity concentration semiconductor layer is exposed to an aqueous solution of a hydrogen fluoride-nitric acid-acetic acid-based etching solution while being subjected to ultrasonic-vibration.
摘要翻译：公开了通过利用杂质浓度差来选择性地蚀刻高杂质浓度半导体层的方法。根据该方法，在进行超声波振动的同时，将高杂质浓度的半导体层暴露于氟化氢 - 硝酸 - 乙酸系蚀刻溶液的水溶液中。

18. 发明授权

US5321282A Integrated circuit having a charge coupled device and MOS transistor and method for manufacturing thereof 失效
标题翻译：具有电荷耦合器件和MOS晶体管的集成电路及其制造方法
公开(公告)号：US5321282A
公开(公告)日：1994-06-14
申请号：US845267
申请日：1992-03-03
申请人： Minoru Taguchi
发明人： Minoru Taguchi
IPC分类号： H01L27/092 , H01L21/339 , H01L21/8234 , H01L21/8238 , H01L27/105 , H01L29/762 , H01L29/78 , H01L29/34
CPC分类号： H01L21/823406 , H01L27/1057
摘要： An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The insulating film between the electrodes is formed by thermal oxidizing the lower gate electrode using the silicon nitride film as a mask.
摘要翻译：集成电路包括电荷耦合器件和MOS晶体管。电荷耦合器件在衬底上具有下电极和上栅电极。基板和电极之间的绝缘膜包括氮化硅。电极之间的绝缘膜通过使用氮化硅膜作为掩模对下部栅电极进行热氧化而形成。

19. 发明授权

US5286986A Semiconductor device having CCD and its peripheral bipolar transistors 失效
标题翻译：具有CCD及其外围双极晶体管的半导体器件
公开(公告)号：US5286986A
公开(公告)日：1994-02-15
申请号：US837091
申请日：1992-02-18
申请人： Kazuo Kihara , Minoru Taguchi
发明人： Kazuo Kihara , Minoru Taguchi
IPC分类号： H01L27/085 , H01L29/78 , H01L27/02 , H01L29/72
CPC分类号： H01L27/085
摘要： In a semiconductor device, a charge transfer device, a bipolar transistor, and a MOSFET are formed on a single chip, and the peripheral portion of the charge transfer device is surrounded by an N.sup.+ -type region. Since the charge transfer device block is surrounded by the N.sup.+ -type region and the N.sup.+ -type buried layer, leaked charge of clocks from the charge transfer device is absorbed by the N.sup.+ -type region and the N.sup.+ -type buried layer.
摘要翻译：在半导体器件中，在单个芯片上形成电荷转移器件，双极晶体管和MOSFET，并且电荷转移器件的周边部分被N +型区域包围。由于电荷转移装置块被N +型区域和N +型掩埋层包围，所以来自电荷转移装置的时钟的泄漏电荷被N +型区域和N +型掩埋层吸收。

20. 发明授权

US5220190A Device having a charge transfer device, MOSFETs, and bipolar transistors--a l 失效
标题翻译：具有在单个半导体基板中形成的充电传输器件，MOSFET和双极晶体管的器件
公开(公告)号：US5220190A
公开(公告)日：1993-06-15
申请号：US641921
申请日：1991-01-16
申请人： Minoru Taguchi , Kazuo Kihara
发明人： Minoru Taguchi , Kazuo Kihara
IPC分类号： H01L21/761 , H01L21/339 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/146 , H01L29/762
CPC分类号： H01L27/1057 , H01L27/0623
摘要： A semiconductor device according to the present invention has a semiconductor body of a first conductivity type, three islands of a second conductivity type, formed in the surface of the semiconductor body. Two wells of the first conductivity are formed in the first and second islands. The device further has a charge transfer device which back gate is formed of the first well, an insulated-gate FET of the first conductivity type which back gate is formed of the second island, an insulated-gate FET of the second conductivity type which back gate is formed of the second well, and a bipolar transistor which collector is formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.

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