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    • 17. 发明授权
    • Display device and manufacturing method therefor
    • 显示装置及其制造方法
    • US07952095B2
    • 2011-05-31
    • US12208371
    • 2008-09-11
    • Eiji OueTakuo KaitohHidekazu MiyakeToshio MiyazawaYuichiro Takashina
    • Eiji OueTakuo KaitohHidekazu MiyakeToshio MiyazawaYuichiro Takashina
    • H01L29/04H01L21/00
    • H01L27/1229H01L27/1214H01L27/1274H01L29/66765H01L29/78678
    • In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.
    • 在本发明的在基板上形成薄膜晶体管的显示装置中,薄膜晶体管包括:在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层,其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极,其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个, 并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。
    • 18. 发明授权
    • Display device
    • 显示设备
    • US07944439B2
    • 2011-05-17
    • US11448989
    • 2006-06-08
    • Norio MambaYasuyuki KudoToshio Miyazawa
    • Norio MambaYasuyuki KudoToshio Miyazawa
    • G06F3/038G09G3/36
    • G09G3/3696G09G3/3614G09G2320/02
    • A display device includes first and second voltage generation circuits each including a voltage circuit for outputting an internal voltage on the basis of a plurality of clocks, a sampling circuit for sampling an output signal from the voltage circuit, a monitoring circuit for comparing an output signal from the first sampling circuit with a predetermined voltage range and outputting a result, and a power supply generation circuit for generating a power supply voltage to be input to the voltage circuit on the basis of an output signal supplied from the monitoring circuit. The voltage circuit in the first voltage generation circuit is controlled on the basis of a level of the power supply voltage, and the voltage circuit in the second voltage generation circuit is controlled on the basis of periods of the clocks.
    • 显示装置包括第一和第二电压产生电路,每个电压产生电路包括用于基于多个时钟输出内部电压的电压电路,用于对来自电压电路的输出信号进行采样的采样电路,用于比较输出信号 从具有预定电压范围的第一采样电路输出结果;以及电源产生电路,用于根据从监视电路提供的输出信号产生要输入到电压电路的电源电压。 基于电源电压的电平来控制第一电压产生电路中的电压电路,并且基于时钟周期来控制第二电压产生电路中的电压电路。