专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20100136788A1 THERMAL METHODS FOR CLEANING POST-CMP WAFERS 有权
标题翻译：用于清洁后CMP抛光的热方法
公开(公告)号：US20100136788A1
公开(公告)日：2010-06-03
申请号：US12699518
申请日：2010-02-03
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/306 , H01L21/3205
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

12. 发明授权

US07709400B2 Thermal methods for cleaning post-CMP wafers 有权
标题翻译：用于清洁CMP后晶圆的热处理方法
公开(公告)号：US07709400B2
公开(公告)日：2010-05-04
申请号：US11801269
申请日：2007-05-08
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagirí , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagirí , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/24 , H01L21/40 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

13. 发明授权

US08454794B2 Antenna for plasma processor and apparatus 失效
标题翻译：等离子体处理器和设备天线
公开(公告)号：US08454794B2
公开(公告)日：2013-06-04
申请号：US13524734
申请日：2012-06-15
申请人： Arthur M. Howald , Andras Kuthi
发明人： Arthur M. Howald , Andras Kuthi
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32183
摘要： An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.
摘要翻译：天线包括响应于RF源的激励端子，以将RF电磁场提供给处理真空室中的工件的等离子体。线圈包括具有耦合到激励端子的初级绕组的变压器和与电容器串联连接的多匝等离子体激发次级绕组。

14. 发明授权

US08277604B2 Antenna for plasma processor and apparatus 有权
标题翻译：等离子体处理器和设备天线
公开(公告)号：US08277604B2
公开(公告)日：2012-10-02
申请号：US13020170
申请日：2011-02-03
申请人： Arthur M. Howald , Andras Kuthi
发明人： Arthur M. Howald , Andras Kuthi
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/32183
摘要： An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.
摘要翻译：天线包括响应于RF源的激励端子，以将RF电磁场提供给处理真空室中的工件的等离子体。线圈包括具有耦合到激励端子的初级绕组的变压器和与电容器串联连接的多匝等离子体激发次级绕组。

15. 发明授权

US07140374B2 System, method and apparatus for self-cleaning dry etch 有权
公开(公告)号：US07140374B2
公开(公告)日：2006-11-28
申请号：US10802460
申请日：2004-03-16
申请人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
发明人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
IPC分类号： B08B9/00 , B44C1/22
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

16. 发明授权

US06876155B2 Plasma processor apparatus and method, and antenna 失效
标题翻译：等离子体处理装置和方法以及天线
公开(公告)号：US06876155B2
公开(公告)日：2005-04-05
申请号：US10334063
申请日：2002-12-31
申请人： Arthur M. Howald , Andras Kuthi
发明人： Arthur M. Howald , Andras Kuthi
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/321 , H01J37/32183
摘要： An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. A matching network includes first and second portions respectively between the source and terminals and between the terminals and the antenna plasma excitation coil. In response to indications of impedance matching between the source and its load, currents flowing between (1) the first portion and the terminals and (2) the terminals and the coil are controlled so the latter exceeds the former. The indications control impedances of the first and second portions or the first portion impedance and the source frequency. The coil can include a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding.
摘要翻译：天线包括响应于RF源的激励端子，以将RF电磁场提供给处理真空室中的工件的等离子体。匹配网络包括分别在源极和端子之间以及在端子和天线等离子体激励线圈之间的第一和第二部分。响应于源极和负载之间的阻抗匹配的指示，在（1）第一部分和端子之间流动的电流和（2）端子和线圈被控制，使得后者超过前者。第一和第二部分或第一部分阻抗和源频率的指示控制阻抗。线圈可以包括具有耦合到激励端子的初级绕组和多匝等离子体激发次级绕组的变压器。

17. 发明授权

US06646385B2 Plasma excitation coil 有权
公开(公告)号：US06646385B2
公开(公告)日：2003-11-11
申请号：US10227275
申请日：2002-08-26
申请人： Arthur M. Howald , Brian McMillin , Frank Yun Lin
发明人： Arthur M. Howald , Brian McMillin , Frank Yun Lin
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connected to one coil excitation terminal and a capacitor connected to another coil excitation terminal. The impedances of the inductors and the capacitors at the RF source frequency and the discontinuity locations are such as to cause a standing wave voltage of the coil to have (1) equal and opposite values at the coil terminals, (2) sudden amplitude and slope changes, slope reversals and polarity reversals at each of the discontinuities, and (3) three gradual standing wave voltage polarity reversals, spaced from each other by 120°. Two of the gradual polarity reversals are azimuthally aligned with the discontinuities. In a second embodiment, one turn has a discontinuity having a series capacitor connected across it. A shunt capacitor is connected between the discontinuity and ground.

18. 发明授权

US06441555B1 Plasma excitation coil 有权
标题翻译：等离子体励磁线圈
公开(公告)号：US06441555B1
公开(公告)日：2002-08-27
申请号：US09539906
申请日：2000-03-31
申请人： Arthur M. Howald , Brian McMillin , Frank Yun Lin
发明人： Arthur M. Howald , Brian McMillin , Frank Yun Lin
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connected to one coil excitation terminal and a capacitor connected to another coil excitation terminal. The impedances of the inductors and the capacitors at the RF source frequency and the discontinuity locations are such as to cause a standing wave voltage of the coil to have (1) equal and opposite values at the coil terminals, (2) sudden amplitude and slope changes, slope reversals and polarity reversals at each of the discontinuities, and (3) three gradual standing wave voltage polarity reversals, spaced from each other by 120°. Two of the gradual polarity reversals are azimuthally aligned with the discontinuities. In a second embodiment, one turn has a discontinuity having a series capacitor connected across it. A shunt capacitor is connected between the discontinuity and ground.
摘要翻译：螺旋状多匝线圈激发用于在真空等离子体处理器中处理工件的等离子体。在一个实施例中，两个匝数具有不连续性。每个不连续点都有一个连接在其上的电容器。 RF源通过匹配网络驱动线圈，连接到一个线圈激励端子的电感器和连接到另一个线圈励磁端子的电容器。在RF源频率和不连续位置处的电感器和电容器的阻抗使得线圈的驻波电压具有（1）线圈端子相等和相反的值，（2）突然的幅度和斜率每个不连续点的变化，斜率反转和极性反转，以及（3）三个逐渐驻波极性反转，彼此间隔120°。两个逐渐的极性反转与方位角对准不连续。在第二实施例中，一匝具有连接在其上的串联电容器的不连续。分流电容器连接在不连续和地之间。

19. 发明授权

US08084356B2 Methods of low-K dielectric and metal process integration 有权
标题翻译：低K电介质和金属工艺集成的方法
公开(公告)号：US08084356B2
公开(公告)日：2011-12-27
申请号：US12212611
申请日：2008-09-17
申请人： Yezdi N. Dordi , Arthur M. Howald
发明人： Yezdi N. Dordi , Arthur M. Howald
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76883
摘要： An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.
摘要翻译：一种用于形成使用包括低k电介质和金属的镶嵌结构的电子器件的金属化层的集成方法。根据本发明的一个实施例，集成工艺包括平面化低k电介质结构中的间隙填充金属，在低k电介质上产生保护层，然后清洁间隙填充金属的表面。本发明的另一个实施方案包括保护低k电介质如碳掺杂氧化硅的方法。

20. 发明授权

US07480571B2 Apparatus and methods for improving the stability of RF power delivery to a plasma load 有权
标题翻译：用于提高RF功率输送到等离子体负载的稳定性的装置和方法
公开(公告)号：US07480571B2
公开(公告)日：2009-01-20
申请号：US10966549
申请日：2004-10-15
申请人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III
发明人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1001/00
CPC分类号： H01J37/32082 , H01J37/32183 , H01J37/3299 , H03H7/40 , H05H1/46
摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.
摘要翻译：公开了用于提高RF功率输送到等离子体负载的稳定性的方法。该方法包括在RF功率系统中的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式