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11. 发明授权

US08083986B2 Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation 有权
标题翻译：通过分层纳米生成制造先进的热电材料
公开(公告)号：US08083986B2
公开(公告)日：2011-12-27
申请号：US12315520
申请日：2008-12-04
申请人： Sang Hyouk Choi , Yeonjoon Park , Sang-Hyon Chu , James R. Elliott , Glen C. King , Jae-Woo Kim , Peter T. Lillehei , Diane M. Stoakley
发明人： Sang Hyouk Choi , Yeonjoon Park , Sang-Hyon Chu , James R. Elliott , Glen C. King , Jae-Woo Kim , Peter T. Lillehei , Diane M. Stoakley
IPC分类号： B28B1/00
CPC分类号： C22C1/04 , B22F2998/00 , B22F1/0018
摘要： A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).
摘要翻译：制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构，这是提高热电性能的关键。基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器（voigen）的稳定膜。随后的热过程在热电材料内部产生分级纳米结构。这种具有纳米结构的先进热电材料的潜在应用领域是商业应用（电子冷却），医学和科学应用（生物分析装置，医学成像系统），电信以及国防和军事应用（夜视设备）。

12. 发明申请

US20110117690A1 Fabrication of Nanovoid-Imbedded Bismuth Telluride with low dimensional system 有权
标题翻译：用低维度系统制备纳米型铋碲化铋
公开(公告)号：US20110117690A1
公开(公告)日：2011-05-19
申请号：US12928128
申请日：2010-12-03
申请人： Sang-Hyon Chu , Sang Hyouk Choi , Jae-Woo Kim , Yeonjoon Park , James R. Elliott, JR. , Glen C. King , Diane M. Stoakley
发明人： Sang-Hyon Chu , Sang Hyouk Choi , Jae-Woo Kim , Yeonjoon Park , James R. Elliott, JR. , Glen C. King , Diane M. Stoakley
IPC分类号： H01L21/20
CPC分类号： B64B1/06 , B64B1/20 , B64B1/30 , B64C2201/022 , B64C2201/042 , B64C2201/122 , B64C2201/125 , B64C2201/127 , H01L35/16 , H01L35/22 , H01L35/26
摘要： A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.
摘要翻译：在先进的热电（TE）材料的开发中，设计了一种新型的纳米复合碲化铋（Bi-Te）材料，具有低维（量子点，量子线或量子阱）结构。碲化铋目前是固态TE冷却装置最有名的候选材料，因为它在室温下具有最高的TE品质因数。这里描述的创新工艺允许将纳米尺度的空隙纳入Bi-Te材料。最终的纳米结构如空隙尺寸，尺寸分布，空隙位置等也可以在各种工艺条件下进行控制。

13. 发明申请

US20070134552A1 Multilayer ferritin array for bionanobattery 有权
标题翻译：多层铁蛋白阵列用于bionanobattery
公开(公告)号：US20070134552A1
公开(公告)日：2007-06-14
申请号：US11371575
申请日：2006-03-09
申请人： Sang-Hyon Chu , Sang Choi , Jae-Woo Kim , Peter Lillehei , Yeonjoon Park , Glen King , James Elliott
发明人： Sang-Hyon Chu , Sang Choi , Jae-Woo Kim , Peter Lillehei , Yeonjoon Park , Glen King , James Elliott
IPC分类号： H01M4/60 , H01M4/62
CPC分类号： H01M4/60 , H01M4/04 , H01M4/364 , H01M4/366 , H01M4/48 , H01M4/50 , H01M4/52
摘要： A thin-film electrode for a bio-nanobattery is produced by consecutively depositing arrays of a ferritin protein on a substrate, employing a spin self-assembly procedure. By this procedure, a first ferritin layer is first formed on the substrate, followed by building a second, oppositely-charged ferritin layer on the top of the first ferritin layer to form a bilayer structure. Oppositely-charged ferritin layers are subsequently deposited on top of each other until a desired number of bilayer structures is produced. An ordered, uniform, stable and robust, thin-film electrode material of enhanced packing density is presented, which provides optimal charge density for the bio-nanobattery.
摘要翻译：生物纳米电池的薄膜电极是通过使用自旋自组装方法在基片上连续沉积铁蛋白蛋白的阵列产生的。通过该过程，首先在衬底上形成第一铁蛋白层，随后在第一铁蛋白层的顶部上构建第二个相对充电的铁蛋白层以形成双层结构。随后将相对充电的铁蛋白层沉积在彼此的顶部，直到产生所需数量的双层结构。提出了一种有序，均匀，稳定和稳定的薄膜电极材料，提高了填充密度，为生物纳米电池提供了最佳的电荷密度。

14. 发明申请

US20090134362A1 Aqueous Solution Dispersement of Carbon Nanotubes 有权
标题翻译：碳纳米管的水溶液分散
公开(公告)号：US20090134362A1
公开(公告)日：2009-05-28
申请号：US12272826
申请日：2008-11-18
申请人： Jae-Woo Kim , Cheol Park , Sang H. Choi , Peter T. Lillehei , Joycelyn S. Harrison
发明人： Jae-Woo Kim , Cheol Park , Sang H. Choi , Peter T. Lillehei , Joycelyn S. Harrison
IPC分类号： H01B1/24
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/28 , H01M4/92 , H01M4/926 , Y10S977/746 , Y10S977/75 , Y10S977/752
摘要： Carbon nanotubes (CNTs) are dispersed in an aqueous buffer solution consisting of at least 50 weight percent water and a remainder weight percent that includes a buffer material. The buffer material has a molecular structure defined by a first end, a second end, and a middle disposed between the first and second ends. The first end is a cyclic ring with nitrogen and oxygen heteroatomes, the middle is a hydrophobic alkyl chain, and the second end is a charged group.
摘要翻译：碳纳米管（CNT）分散在由至少50重量％的水组成的缓冲水溶液中，其余的重量百分比包括缓冲材料。缓冲材料具有由第一端，第二端和设置在第一端和第二端之间的中间限定的分子结构。第一端是具有氮和氧的杂原子的环状环，中间是疏水性烷基链，第二端是带电基团。

15. 发明申请

US20090136828A1 Carbon Nanotube Electrodes and Method for Fabricating Same for Use in Biofuel Cell and Fuel Cell Applications 审中-公开
标题翻译：碳纳米管电极及其制造方法，用于生物燃料电池和燃料电池应用
公开(公告)号：US20090136828A1
公开(公告)日：2009-05-28
申请号：US12272830
申请日：2008-11-18
申请人： Jae-Woo Kim , Peter T. Lillehei , Cheol Park , Sang H. Choi
发明人： Jae-Woo Kim , Peter T. Lillehei , Cheol Park , Sang H. Choi
IPC分类号： H01M4/02 , H01M4/88
CPC分类号： H01M4/8828 , H01M4/8807 , H01M4/9008 , H01M4/9083 , H01M8/16 , Y02E60/527
摘要： Carbon nanotubes (CNTs) are mixed in an aqueous buffer solution that includes a buffer material having a molecular structure defined by a first end, a second end, and a middle disposed between the first and second ends. The first end is a cyclic ring with nitrogen and oxygen heteroatomes, the middle is a hydrophobic alkyl chain, and the second end is a charged group. The resulting solution includes the CNTs dispersed therein. Metal-core ferritins are then mixed into the resulting solution where at least a portion of the ferritins are coupled to the CNTs.
摘要翻译：碳纳米管（CNT）在含有缓冲材料的缓冲水溶液中混合，所述缓冲材料具有由第一末端，第二末端以及设置在第一和第二末端之间的中间部分所限定的分子结构。第一端是具有氮和氧的杂原子的环状环，中间是疏水性烷基链，第二端是带电基团。所得溶液包括分散在其中的CNT。然后将金属铁心蛋白混合到所得溶液中，其中至少一部分铁素体与CNT相连。

16. 发明授权

US07998368B2 Aqueous solution dispersement of carbon nanotubes 有权
标题翻译：碳纳米管的水溶液分散
公开(公告)号：US07998368B2
公开(公告)日：2011-08-16
申请号：US12272826
申请日：2008-11-18
申请人： Jae-Woo Kim , Cheol Park , Sang H. Choi , Peter T. Lillehei , Joycelyn S. Harrison
发明人： Jae-Woo Kim , Cheol Park , Sang H. Choi , Peter T. Lillehei , Joycelyn S. Harrison
IPC分类号： H01B1/06
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/28 , H01M4/92 , H01M4/926 , Y10S977/746 , Y10S977/75 , Y10S977/752
摘要： Carbon nanotubes (CNTs) are dispersed in an aqueous buffer solution consisting of at least 50 weight percent water and a remainder weight percent that includes a buffer material. The buffer material has a molecular structure defined by a first end, a second end, and a middle disposed between the first and second ends. The first end is a cyclic ring with nitrogen and oxygen heteroatomes, the middle is a hydrophobic alkyl chain, and the second end is a charged group.
摘要翻译：碳纳米管（CNT）分散在由至少50重量％的水组成的缓冲水溶液中，其余的重量百分比包括缓冲材料。缓冲材料具有由第一端，第二端和设置在第一端和第二端之间的中间限定的分子结构。第一端是具有氮和氧的杂原子的环状环，中间是疏水性烷基链，第二端是带电基团。

17. 发明申请

US20130119316A1 Boron nitride and boron nitride nanotube materials for radiation shielding 审中-公开
标题翻译：氮化硼和氮化硼纳米管材料用于辐射屏蔽
公开(公告)号：US20130119316A1
公开(公告)日：2013-05-16
申请号：US13068329
申请日：2011-05-09
申请人： Godfrey Sauti , Cheol Park , Jin Ho Kang , Jae-Woo Kim , Joycelyn S. Harrison , Michael W. Smith , Kevin Jordan , Sharon E. Lowther , Peter T. Lillehei , Sheila A. Thibeault
发明人： Godfrey Sauti , Cheol Park , Jin Ho Kang , Jae-Woo Kim , Joycelyn S. Harrison , Michael W. Smith , Kevin Jordan , Sharon E. Lowther , Peter T. Lillehei , Sheila A. Thibeault
IPC分类号： G21F1/10
CPC分类号： G21F1/103 , G21F1/00
摘要： Effective radiation shielding is required to protect crew and equipment in various fields including aerospace, defense, medicine and power generation. Light elements and in particular hydrogen are most effective at shielding against high-energy particles including galactic cosmic rays, solar energetic particles and fast neutrons. However, pure hydrogen is highly flammable, has a low neutron absorption cross-section, and cannot be made into structural components. Nanocomposites containing the light elements Boron, Nitrogen, Carbon and Hydrogen as well dispersed boron nano-particles, boron nitride nanotubes (BNNTs) and boron nitride nano-platelets, in a matrix, provide effective radiation shielding materials in various functional forms. Boron and nitrogen have large neutron absorption cross-sections and wide absorption spectra. The incorporation of boron and nitrogen containing nanomaterials into hydrogen containing matrices provides composites that can effectively shield against neutrons and a wide range of radiation species of all energies without fragmentation and the generation of harmful secondary particles.
摘要翻译：需要有效的辐射屏蔽来保护航空航天，国防，医药和发电等各个领域的船员和设备。轻元素，特别是氢是最有效的屏蔽高能粒子，包括星系宇宙射线，太阳能能粒子和快中子。然而，纯氢是高度易燃的，具有低的中子吸收横截面，并且不能制成结构部件。含有轻质元素的纳米复合材料可以提供各种功能形式的有效的辐射屏蔽材料，硼，氮，碳和氢以及分散的硼纳米颗粒，氮化硼纳米管（BNNTs）和氮化硼纳米血小板。硼和氮具有大的中子吸收截面和宽的吸收光谱。将含硼和氮的纳米材料掺入含氢基质提供了复合材料，可以有效地屏蔽所有能量的中子和宽范围的辐射种类，而不会产生碎片和产生有害的二次粒子。

18. 发明授权

US07091117B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07091117B2
公开(公告)日：2006-08-15
申请号：US10836694
申请日：2004-04-30
申请人： Jae-Woo Kim , Yong-Sun Ko , Sang-Sup Jeong
发明人： Jae-Woo Kim , Yong-Sun Ko , Sang-Sup Jeong
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/66553 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L21/76838 , H01L21/823437 , H01L27/10873
摘要： A method of fabricating a semiconductor device including sequentially forming a polysilicon layer, a first insulating layer, and a photoresist layer over a gate oxide film positioned on a semiconductor substrate. A photoresist pattern with a first groove is formed by selectively patterning the photoresist layer to partially expose a surface of the first insulating layer. A second insulating layer is formed over the photoresist pattern with the first groove and over the exposed surface of the first insulating layer. A sacrificial spacer is formed on each inner wall of the first groove by etching back the second insulating layer and forming a second groove in the first insulating layer in communication with the first groove to expose a surface of the polysilicon layer at the bottom of the second groove. The photoresist pattern is removed, and an arbitrary layer pattern is formed over the polysilicon layer at the bottom of the second groove. The sacrificial spacers and first insulating layer are removed, and a gate electrode is formed by etching the polysilicon layer using the arbitrary layer pattern as a mask.
摘要翻译：一种制造半导体器件的方法，包括在位于半导体衬底上的栅极氧化膜上顺序地形成多晶硅层，第一绝缘层和光致抗蚀剂层。通过选择性地图案化光致抗蚀剂层以部分地暴露第一绝缘层的表面来形成具有第一凹槽的光刻胶图案。在光致抗蚀剂图案上形成有第一绝缘层和第一绝缘层的暴露表面上的第一绝缘层。通过蚀刻第二绝缘层并在与第一凹槽连通的第一绝缘层中形成第二凹槽，在第二凹槽的每个内壁上形成牺牲隔离物，以暴露第二凹槽底部的多晶硅层的表面槽。去除光致抗蚀剂图案，并且在第二凹槽底部的多晶硅层上形成任意层图案。去除牺牲间隔物和第一绝缘层，并且通过使用任意层图案作为掩模蚀刻多晶硅层来形成栅电极。

19. 发明申请

US20080101220A1 Header suppression/compression apparatus and method for providing multicast and broadcast service (MBS) in broadband wireless access system 审中-公开
标题翻译：在宽带无线接入系统中提供组播广播业务（MBS）的报头抑制/压缩装置及方法
公开(公告)号：US20080101220A1
公开(公告)日：2008-05-01
申请号：US11981932
申请日：2007-10-31
申请人： Ki-Back Kim , Jae-Woo Kim , Sung-Hong Wie
发明人： Ki-Back Kim , Jae-Woo Kim , Sung-Hong Wie
IPC分类号： H04L12/24
CPC分类号： H04L12/189 , H04L69/04 , H04W4/06 , H04W4/12 , H04W28/06
摘要： Header suppression/compression apparatus and method for providing Multicast and Broadcast Service (MBS) in a Broadband Wireless Access (BWA) system are provided. The method includes checking an overhead ratio of a packet based on the MBS channels; when the overhead ratio of the packet is greater than a threshold, compressing a header of the packet according to a compression algorithm preset for the corresponding MBS channel or zone; and when the overhead ratio of the packet is less than the threshold, uncompressing the header of the packet.
摘要翻译：提供了在宽带无线接入（BWA）系统中提供组播和广播服务（MBS）的报头抑制/压缩设备和方法。该方法包括基于MBS信道检查分组的开销比; 当分组的开销比大于阈值时，根据对应的MBS信道或区域预设的压缩算法来压缩分组的报头; 并且当分组的开销比小于阈值时，解压缩分组的报头。

20. 发明授权

US06885139B2 Color selection apparatus for color cathode ray tube 失效
标题翻译：彩色阴极射线管选色装置
公开(公告)号：US06885139B2
公开(公告)日：2005-04-26
申请号：US10187724
申请日：2002-07-01
申请人： Jae-Ho Jeong , Myung-Sup Seo , Sang-Shin Choi , Jae-Woo Kim
发明人： Jae-Ho Jeong , Myung-Sup Seo , Sang-Shin Choi , Jae-Woo Kim
IPC分类号： H01J29/02 , H01J29/07 , H01J29/80
CPC分类号： H01J29/073 , H01J2229/0711
摘要： A color selection apparatus for a cathode ray tube. A mask frame having a pair of supporting members is disposed in parallel and spaced away from each other. A pair of elastic members is disposed between and coupled to the supporting members. A tensioned mask is coupled to the supporting members and is provided with a plurality of beam-passing apertures. A spring assembly includes a hook having a frame fixing part fixed on the mask frame and a spring fixing part and a spring fixed to the spring fixing part. The hook has a cut-away portion defined by cutting a portion of the frame fixing part. The cut-away portion forms a welding portion for welding the hook to the mask frame.
摘要翻译：一种用于阴极射线管的颜色选择装置。具有一对支撑构件的荫罩框架平行设置并彼此间隔开。一对弹性构件设置在支撑构件之间并且联接到支撑构件。张紧的掩模联接到支撑构件并且设置有多个光束通过孔。弹簧组件包括具有固定在掩模框架上的框架固定部分的钩子和固定到弹簧固定部件上的弹簧固定部件和弹簧。钩具有通过切割框架固定部分的一部分而限定的切口部分。切割部分形成用于将钩子焊接到掩模框架的焊接部分。

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