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11. 发明申请

US20110233563A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233563A1
公开(公告)日：2011-09-29
申请号：US13132184
申请日：2009-11-25
申请人： Akihiko Sugai , Yasuyuki Sakaguchi
发明人： Akihiko Sugai , Yasuyuki Sakaguchi
IPC分类号： H01L29/161 , H01L21/28
CPC分类号： H01L21/0465 , H01L21/0485 , H01L29/6603 , H01L29/872
摘要： A method of manufacturing of a semiconductor device (101) includes: a fine pattern forming step of forming p-type impurity regions (3, 4) and surface ohmic contact electrodes (5) using a stepper, after forming an N-type epitaxial layer (2) on a SiC single-crystal substrate (1); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes (5) and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (1); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode (7) on the SiC single-crystal substrate (1); a surface Schottky contact electrode forming step of forming a Schottky metal portion (8) connected to the p-type impurity regions (3, 4) and the surface ohmic contact electrodes (5); and a step of forming a surface pad electrode (9) that covers the Schottky metal portion (8).
摘要翻译：半导体器件（101）的制造方法包括：在形成N型外延层之后，使用步进器形成p型杂质区域（3,3）和表面欧姆接触电极（5）的精细图案形成步骤（2）在SiC单晶衬底（1）上; 形成保护膜以覆盖表面欧姆接触电极（5）并进行保护膜的平坦化的保护膜平坦化工序; 减薄SiC单晶衬底（1）的衬底稀化步骤; 在SiC单晶衬底（1）上形成背面欧姆接触电极（7）的背面欧姆接触电极形成步骤; 表面肖特基接触电极形成步骤，形成连接到p型杂质区（3,4）和表面欧姆接触电极（5）的肖特基金属部分（8）。以及形成覆盖所述肖特金属部（8）的表面焊盘电极（9）的工序。

12. 发明申请

US20110183113A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：硅碳化硅单晶基板
公开(公告)号：US20110183113A1
公开(公告)日：2011-07-28
申请号：US13121115
申请日：2009-09-28
申请人： Yasuyuki Sakaguchi
发明人： Yasuyuki Sakaguchi
IPC分类号： B32B3/00 , B82Y30/00
CPC分类号： H01L21/30625 , B24B37/04 , C30B29/36 , H01L21/02008 , H01L21/02024 , H01L21/02052 , H01L29/1608 , Y10T428/24372
摘要： There is provided a silicon carbide single crystal substrate having adhered particles that cause crystal defects removed therefrom and has high surface cleanliness,the silicon carbide single crystal substrate, wherein a density of first adhered particles attached onto one surface of the substrate and having a height of 100 nm or more is one particle/cm2 or less, and also a density of second adhered particles attached onto one surface of the substrate and having a height of less than 100 nm is 1,500 particles/cm2 or less.
摘要翻译：提供一种碳化硅单晶基板，其具有粘附的颗粒，其导致从其中去除的晶体缺陷并具有高的表面清洁度，该碳化硅单晶基板，其中附着在基板的一个表面上的第一附着颗粒的密度， 100nm以上是1个/ cm 2以下，并且附着在基板的一个表面上并且具有小于100nm的高度的第二附着粒子的密度为1,500个/ cm 2以下。

13. 发明申请

US20060144324A1 Silicon carbide single crystal and method and apparatus for producing the same 有权
标题翻译：碳化硅单晶及其制造方法和装置
公开(公告)号：US20060144324A1
公开(公告)日：2006-07-06
申请号：US10528556
申请日：2003-09-18
申请人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
发明人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/002 , C30B23/00 , C30B29/36
摘要： A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course of silicon carbide single crystal, a silicon raw material (22) is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.
摘要翻译：使用碳化硅原料（11）的升华气体在晶种基板（5）上沉积碳化硅单晶（6）的生长坩埚（2）设置在外坩埚（1）的内部。在碳化硅单晶的过程中，硅原料（22）从外部连续地进料到生长坩埚和外坩埚之间的空间中，以使硅原料蒸发。围绕生长坩埚的气氛气体由硅气体构成。控制气氛硅气体的压力以抑制生长坩埚内的升华气体的组成的变化，从而以高生长速度可靠地生长晶种上晶体缺陷少的大尺寸碳化硅单晶。

14. 发明授权

US5744829A A1GaInP light emitting diode 失效
标题翻译： A1GaInP发光二极管
公开(公告)号：US5744829A
公开(公告)日：1998-04-28
申请号：US773348
申请日：1996-12-26
申请人： Shigetaka Murasato , Yasuyuki Sakaguchi
发明人： Shigetaka Murasato , Yasuyuki Sakaguchi
IPC分类号： H01L33/10 , H01L33/12 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/10 , H01L33/14
摘要： An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.
摘要翻译： AlGaInP发光二极管包括在GaAs衬底上的（Al x Ga 1-x）y In 1-y P的双异质结发光结构。在GaAs衬底和双异质结发光结构之间设置多层反射层。形成双异质结的层在外延生长温度下与GaAs衬底晶格匹配。 GaP电流扩散层设置在双异质结发光结构的上表面上，欧姆电极设置在GaAs衬底的下侧和电流扩散层的上表面上。

15. 发明授权

US5656829A Semiconductor light emitting diode 失效
标题翻译：半导体发光二极管
公开(公告)号：US5656829A
公开(公告)日：1997-08-12
申请号：US498785
申请日：1995-07-05
申请人： Yasuyuki Sakaguchi , Sigemasa Nakamura , Yasuo Hosokawa , Yutaka Saito
发明人： Yasuyuki Sakaguchi , Sigemasa Nakamura , Yasuo Hosokawa , Yutaka Saito
IPC分类号： H01L33/02 , H01L33/14 , H01L33/30 , H01L33/00 , H01L27/15
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14
摘要： A semiconductor light emitting diode includes a compound semiconductor substrate and a double-hetero structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.1, 0
摘要翻译：半导体发光二极管包括化合物半导体衬底和作为有源层的（Al x Ga 1-x）y In 1-y P（0≤x≤1,0

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