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1. 发明申请

US20090184327A1 METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20090184327A1
公开(公告)日：2009-07-23
申请号：US12301383
申请日：2007-05-10
申请人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
发明人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
IPC分类号： H01L29/24 , C01B31/36 , H01L21/20
CPC分类号： C30B29/36 , C30B19/04 , C30B19/12 , C30B23/025 , C30B25/18 , Y10S117/902 , Y10S117/915
摘要： A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.
摘要翻译：制造SiC单晶的方法包括以下步骤：在由SiC单晶形成的第一晶种上沿第一生长方向生长第一SiC单晶，将第一SiC单晶生长在第一晶种上在与所述第一生长方向平行或倾斜的方向上，在垂直于所述第一生长方向的截面中沿着长轴方向切割所述第一SiC单晶，以使用所述第二晶种在第二SiC单晶的第二生长方向上生长至大于截面中的长轴长度的厚度，将生长在第二晶种上的第二SiC单晶沿平行或倾斜的方向第二生长方向和在垂直于第二生长方向的横截面中在长轴方向上切割设置的第二SiC单晶，以获得第三晶种，使用第三晶种在其上生长第三SiC单晶，并且以使得曝光{0001}晶面的方式切割在第三晶种上生长的第三SiC单晶，从而获得SiC 单晶。该方法能够在不损害结晶性的前提下有效地扩大晶体。

2. 发明授权

US07029940B2 Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor 有权
标题翻译：用于制造GaN型化合物半导体的氨和用于制造GaN型化合物半导体的方法
公开(公告)号：US07029940B2
公开(公告)日：2006-04-18
申请号：US10821944
申请日：2004-04-12
申请人： Hideki Hayashida , Taizo Ito , Yasuyuki Sakaguchi
发明人： Hideki Hayashida , Taizo Ito , Yasuyuki Sakaguchi
IPC分类号： H01L21/00
CPC分类号： C01C1/003 , C01C1/024 , C01P2002/82 , C01P2006/82 , C23C16/303 , C23C16/4402 , C23C16/4481 , C30B25/02 , C30B29/403 , C30B29/406 , Y10S438/905
摘要： Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.
摘要翻译：用于制造GaN型化合物半导体的氨，填充在充电容器18中，使得氨的至少一部分为液体，液相氨的水浓度通过傅里叶变换红外光谱法（FT -IR）为0.5体积ppm以下，以气态导入容纳基板1的反应室11内，在基板1上形成由该氨开始的包含GaN型化合物的层。

3. 发明授权

US07993453B2 Method for producing silicon carbide single crystal 有权
标题翻译：碳化硅单晶的制造方法
公开(公告)号：US07993453B2
公开(公告)日：2011-08-09
申请号：US12301383
申请日：2007-05-10
申请人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
发明人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
IPC分类号： C30B19/12 , C30B25/20
CPC分类号： C30B29/36 , C30B19/04 , C30B19/12 , C30B23/025 , C30B25/18 , Y10S117/902 , Y10S117/915
摘要： A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.
摘要翻译：制造SiC单晶的方法包括以下步骤：在由SiC单晶形成的第一晶种上沿第一生长方向生长第一SiC单晶，将第一SiC单晶生长在第一晶种上在与所述第一生长方向平行或倾斜的方向上，在垂直于所述第一生长方向的截面中沿着长轴方向切割所述第一SiC单晶，以使用所述第二晶种在第二SiC单晶的第二生长方向上生长至大于截面中的长轴长度的厚度，将生长在第二晶种上的第二SiC单晶沿平行或倾斜的方向第二生长方向和在垂直于第二生长方向的横截面中在长轴方向上切割设置的第二SiC单晶，以获得第三晶种，使用第三晶种在其上生长第三SiC单晶，并且以使得曝光{0001}晶面的方式切割在第三晶种上生长的第三SiC单晶，从而获得SiC 单晶。该方法能够在不损害结晶性的前提下有效地扩大晶体。

4. 发明申请

US20100092366A1 WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME 审中-公开
标题翻译：用于抛光硅碳化硅单晶基板的水基抛光浆料及其抛光方法
公开(公告)号：US20100092366A1
公开(公告)日：2010-04-15
申请号：US12520694
申请日：2007-12-17
申请人： Hisao Kogoi , Naoki Oyanagi , Yasuyuki Sakaguchi
发明人： Hisao Kogoi , Naoki Oyanagi , Yasuyuki Sakaguchi
IPC分类号： C09K13/04 , B24B1/00 , C01B31/36 , C09K3/14
CPC分类号： C09K3/1463 , B24B37/0056 , B24B37/044 , C09K3/1409 , C30B29/36 , C30B33/00 , H01L21/02024 , H01L21/0475 , H01L29/1608
摘要： A water-based polishing slurry for polishing a silicon carbide single crystal, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20° C.
摘要翻译：一种用于抛光碳化硅单晶的水性抛光浆料，其中所述浆料包含平均粒度为1至400nm的磨料颗粒和无机酸，并且所述浆料在20℃下的pH值小于2。

5. 发明授权

US08823015B2 Silicon carbide epitaxial wafer and manufacturing method therefor 有权
标题翻译：碳化硅外延片及其制造方法
公开(公告)号：US08823015B2
公开(公告)日：2014-09-02
申请号：US13392348
申请日：2010-08-25
申请人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
发明人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/0684 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/1608
摘要： Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.
摘要翻译：提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。还提供了制造所述碳化硅外延晶片的方法。提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。

6. 发明申请

US20100028240A1 PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20100028240A1
公开(公告)日：2010-02-04
申请号：US12444322
申请日：2007-10-04
申请人： Tomohiro Shonai , Hisao Kogoi , Yasuyuki Sakaguchi
发明人： Tomohiro Shonai , Hisao Kogoi , Yasuyuki Sakaguchi
IPC分类号： C01B31/36 , C30B15/10 , C30B15/00
CPC分类号： C30B29/36 , C30B23/066 , C30B35/002
摘要： A method for producing an SiC single crystal comprises providing a low temperature region and a high temperature region in a crystal growth crucible (6); disposing a seed crystal substrate formed of an SiC single crystal in the low temperature region of the crystal growth crucible; disposing an SiC raw material in the high temperature region; and depositing a sublimation gas that sublimes from the SiC raw material on the seed crystal substrate to grow the SiC single crystal. A material used in the crucible member where the seed crystal is disposed is a material having a room-temperature linear expansion coefficient that differs from that of SiC by 1.0×10−6/K or less, and the crucible member where the seed crystal is disposed is made of Sic.
摘要翻译： SiC单晶的制造方法包括在晶体生长坩埚（6）中设置低温区域和高温区域; 在晶体生长坩埚的低温区域中设置由SiC单晶形成的晶种基板; 在高温区域设置SiC原料; 并将从SiC原料升华的升华气体沉积在晶种基板上，以生长SiC单晶。在配置有晶种的坩埚部件中使用的材料是具有不同于SiC的室温线膨胀系数为1.0×10 -6 / K以下的材料，以及设置晶种的坩埚部件是由Sic制成的。

7. 发明授权

US07371281B2 Silicon carbide single crystal and method and apparatus for producing the same 有权
标题翻译：碳化硅单晶及其制造方法和装置
公开(公告)号：US07371281B2
公开(公告)日：2008-05-13
申请号：US10528556
申请日：2003-09-18
申请人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
发明人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/002 , C30B23/00 , C30B29/36
摘要： A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course of silicon carbide single crystal, a silicon raw material (22) is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.
摘要翻译：使用碳化硅原料（11）的升华气体在晶种基板（5）上沉积碳化硅单晶（6）的生长坩埚（2）设置在外坩埚（1）的内部。在碳化硅单晶的过程中，硅原料（22）从外部连续地进料到生长坩埚和外坩埚之间的空间中，以使硅原料蒸发。围绕生长坩埚的气氛气体由硅气体构成。控制气氛硅气体的压力以抑制生长坩埚内的升华气体的组成的变化，从而以高生长速度可靠地生长晶种上晶体缺陷少的大尺寸碳化硅单晶。

8. 发明授权

US06719842B2 Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor 失效
标题翻译：用于制造GaN型化合物半导体的氨和用于制造GaN型化合物半导体的方法
公开(公告)号：US06719842B2
公开(公告)日：2004-04-13
申请号：US09473708
申请日：1999-12-29
申请人： Hideki Hayashida , Taizo Ito , Yasuyuki Sakaguchi
发明人： Hideki Hayashida , Taizo Ito , Yasuyuki Sakaguchi
IPC分类号： C30B2502
CPC分类号： C01C1/003 , C01C1/024 , C01P2002/82 , C01P2006/82 , C23C16/303 , C23C16/4402 , C23C16/4481 , C30B25/02 , C30B29/403 , C30B29/406 , Y10S438/905
摘要： Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.
摘要翻译：用于制造GaN型化合物半导体的氨，填充在充电容器18中，使得氨的至少一部分为液体，液相氨的水浓度通过傅里叶变换红外光谱法（FT -IR）为0.5体积ppm以下，以气态导入容纳基板1的反应室11内，在基板1上形成由该氨开始的包含GaN型化合物的层。

9. 发明授权

US08513674B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08513674B2
公开(公告)日：2013-08-20
申请号：US13132184
申请日：2009-11-25
申请人： Akihiko Sugai , Yasuyuki Sakaguchi
发明人： Akihiko Sugai , Yasuyuki Sakaguchi
IPC分类号： H01L31/0312 , H01L29/24
CPC分类号： H01L21/0465 , H01L21/0485 , H01L29/6603 , H01L29/872
摘要： A method of manufacturing of a semiconductor device (101) includes: a fine pattern forming step of forming p-type impurity regions (3, 4) and surface ohmic contact electrodes (5) using a stepper, after forming an N-type epitaxial layer (2) on a SiC single-crystal substrate (1); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes (5) and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (1); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode (7) on the SiC single-crystal substrate (1); a surface Schottky contact electrode forming step of forming a Schottky metal portion (8) connected to the p-type impurity regions (3, 4) and the surface ohmic contact electrodes (5); and a step of forming a surface pad electrode (9) that covers the Schottky metal portion (8).
摘要翻译：半导体器件（101）的制造方法包括：在形成N型外延层之后，使用步进器形成p型杂质区域（3,3）和表面欧姆接触电极（5）的精细图案形成步骤（2）在SiC单晶衬底（1）上; 形成保护膜以覆盖表面欧姆接触电极（5）并进行保护膜的平坦化的保护膜平坦化工序; 减薄SiC单晶衬底（1）的衬底稀化步骤; 在SiC单晶衬底（1）上形成背面欧姆接触电极（7）的背面欧姆接触电极形成步骤; 表面肖特基接触电极形成步骤，形成连接到p型杂质区（3,4）和表面欧姆接触电极（5）的肖特基金属部分（8）。以及形成覆盖所述肖特金属部（8）的表面焊盘电极（9）的工序。

10. 发明申请

US20120146056A1 SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：硅碳复合材料及其制造方法
公开(公告)号：US20120146056A1
公开(公告)日：2012-06-14
申请号：US13392348
申请日：2010-08-25
申请人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
发明人： Kenji Momose , Yutaka Tajima , Yasuyuki Sakaguchi , Michiya Odawara , Yoshihiko Miyasaka
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/0684 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/1608
摘要： Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.
摘要翻译：提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。还提供了制造所述碳化硅外延晶片的方法。提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。

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