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11. 发明申请

US20110157864A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110157864A1
公开(公告)日：2011-06-30
申请号：US12876774
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Maki Sugai , Rei Hashimoto
IPC分类号： F21V9/16
CPC分类号： F21K9/68 , G02F1/133615 , G02F2001/133614
摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.
摘要翻译：根据实施例，提供了一种发光器件。发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。

12. 发明申请

US20090185589A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090185589A1
公开(公告)日：2009-07-23
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01S3/10 , F21V9/16 , G02F1/35
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译：一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为整个发射可见光。

13. 发明授权

US07915630B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07915630B2
公开(公告)日：2011-03-29
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译：一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为整个发射可见光。

14. 发明申请

US20110051769A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110051769A1
公开(公告)日：2011-03-03
申请号：US12719468
申请日：2010-03-08
申请人： Maki SUGAI , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
发明人： Maki SUGAI , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01S5/323 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/16 , H01S5/164 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S2301/18
摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
摘要翻译：一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。第二半导体层包括脊部和宽部。沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。沿着第二方向的宽部的宽度比脊部宽。沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

15. 发明授权

US08432947B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08432947B2
公开(公告)日：2013-04-30
申请号：US12719468
申请日：2010-03-08
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/16 , H01S5/164 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S2301/18
摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
摘要翻译：一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。第二半导体层包括脊部和宽部。沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。沿着第二方向的宽部的宽度比脊部宽。沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

16. 发明授权

US08369375B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08369375B2
公开(公告)日：2013-02-05
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S3/04 , H01S5/00 , H01S3/091
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

17. 发明申请

US20100246628A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100246628A1
公开(公告)日：2010-09-30
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S5/026
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

18. 发明申请

US20100053970A1 LIGHT-EMITTING DEVICE AND ILLUMINATING DEVICE 审中-公开
标题翻译：发光装置和照明装置
公开(公告)号：US20100053970A1
公开(公告)日：2010-03-04
申请号：US12411912
申请日：2009-03-26
申请人： Takahiro Sato , Shinji Saito , Shinya Nunoue , Yasushi Hattori , Maki Sugai
发明人： Takahiro Sato , Shinji Saito , Shinya Nunoue , Yasushi Hattori , Maki Sugai
IPC分类号： G02B27/20 , G02F1/35
CPC分类号： G02B6/001 , G02B6/0096 , G02F1/133603 , G02F1/133609 , G02F2001/133614 , G02F2201/02
摘要： A light-emitting device includes: a first laser light source; a first diffusion member provided along a light axis of a first light radiated form the first laser light source; and a first wavelength converter provided along the first diffusion member. The first diffusion member generates a second light from the first light. The second light outgoes in a direction different from the light axis direction of the first light. A ratio of generating the second light from the first light in a first part is higher than that in a second part, wherein an intensity of the first light in the first part is lower than that in a second part. The first wavelength converter absorbs the second light and emitting a third light having a different wavelength from the second light.
摘要翻译：发光装置包括：第一激光光源; 沿着从所述第一激光光源照射的第一光的光轴设置的第一漫射部件; 以及沿着第一扩散部件设置的第一波长转换器。第一漫射构件从第一光产生第二光。第二光在与第一光的光轴方向不同的方向上出射。在第一部分中产生来自第一光的第二光的比例高于第二部分中的第一光的比率，其中第一部分中的第一光的强度低于第二部分中的第一光的强度。第一波长转换器吸收第二光并发射与第二光不同波长的第三光。

19. 发明授权

US08348468B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08348468B2
公开(公告)日：2013-01-08
申请号：US12876738
申请日：2010-09-07
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
IPC分类号： F21V11/02
CPC分类号： F21K9/64 , F21K9/232 , F21V3/00 , F21Y2101/00 , F21Y2115/30
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

20. 发明申请

US20110216552A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110216552A1
公开(公告)日：2011-09-08
申请号：US12876738
申请日：2010-09-07
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
IPC分类号： F21V8/00 , F21V9/16
CPC分类号： F21K9/64 , F21K9/232 , F21V3/00 , F21Y2101/00 , F21Y2115/30
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

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