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11. 发明授权

US08796744B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08796744B1
公开(公告)日：2014-08-05
申请号：US13812504
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
发明人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
IPC分类号： H01L27/148 , H01L29/768 , H01L29/775
CPC分类号： H01L29/775 , H01L29/161 , H01L29/165 , H01L29/517 , H01L29/518 , H01L29/66431 , H01L29/66545 , H01L29/7786
摘要： The present invention discloses a semiconductor device, which comprises a substrate, a buffer layer on the substrate, an inversely doped isolation layer on the buffer layer, a barrier layer on the inversely doped isolation layer, a channel layer on the barrier layer, a gate stack structure on the channel layer, and source and drain regions at both sides of the gate stack structure, characterized in that the buffer layer and/or the barrier layer and/or the inversely doped isolation layer are formed of SiGe alloys or SiGeSn alloys, and the channel layer is formed of a GeSn alloy. The semiconductor device according to the present invention uses a quantum well structure of SiGe/GeSn/SiGe to restrict transportation of carriers, and it introduces a stress through lattice mis-match to greatly increase the carrier mobility, thus improving the device driving capability so as to be adapted to high-speed and high-frequency application.
摘要翻译：本发明公开了一种半导体器件，其包括衬底，衬底上的缓冲层，缓冲层上的反掺杂隔离层，反掺杂隔离层上的阻挡层，阻挡层上的沟道层，栅极沟道层上的堆叠结构以及栅极堆叠结构两侧的源极和漏极区域，其特征在于缓冲层和/或势垒层和/或反向掺杂隔离层由SiGe合金或SiGeSn合金形成，并且沟道层由GeSn合金形成。根据本发明的半导体器件使用SiGe / GeSn / SiGe的量子阱结构来限制载流子的传输，并且通过晶格失配引入应力以大大增加载流子迁移率，从而提高器件驱动能力，从而适应高速高频应用。

12. 发明授权

US08570471B2 OCB liquid crystal panel and manufacturing method thereof, and OCB liquid crystal display 有权
标题翻译： OCB液晶面板及其制造方法，以及OCB液晶显示器
公开(公告)号：US08570471B2
公开(公告)日：2013-10-29
申请号：US13318352
申请日：2011-05-19
申请人： Kuan-Cheng Lee , Xiaolong Ma
发明人： Kuan-Cheng Lee , Xiaolong Ma
IPC分类号： G02F1/1337
CPC分类号： G02F1/133351 , G02F1/133788 , G02F1/1395
摘要： The present invention discloses a manufacturing method of an Optically Compensated Bend (OCB) liquid crystal panel, which comprises: an arranging step S1 for alternately arranging a plurality of thin-film transistor (TFT) substrates and a plurality of color filter (CF) substrates, the TFT substrates and the CF substrates are coated with optical alignment material; a light irradiating step S2 for using an ultraviolet (UV) light source to irradiate the TFT substrates and the CF substrates so that alignment films of predetermined alignment directions are formed by the optical alignment material on the TFT substrates and the CF substrates; and an attaching step S3 for attaching each of the TFT substrates and an adjacent one of the CF substrates in such a way that an alignment direction of the TFT substrate is the same as that of the corresponding CF substrate and filling an OCB liquid crystal layer therebetween to form a plurality of OCB liquid crystal panels. For the OCB liquid crystal panel of the present invention, the TFT substrates and the CF substrates are optically aligned in a contactless way, the efficiency of each irradiation is high, which is favorable for mass production.
摘要翻译：本发明公开了一种光学补偿弯曲（OCB）液晶面板的制造方法，其包括：用于交替布置多个薄膜晶体管（TFT）基板和多个滤色器（CF）基板）的布置步骤S1 ，TFT基板和CF基板涂覆有光学取向材料; 用于使用紫外线（UV）光源照射TFT基板和CF基板的光照射步骤S2，使得通过TFT基板和CF基板上的光学取向材料形成预定取向方向的取向膜; 以及附接步骤S3，用于将TFT基板和相邻的一个CF基板以使得TFT基板的取向方向与相应的CF基板相同并且在其间填充OCB液晶层的方式以形成多个OCB液晶面板。对于本发明的OCB液晶面板，TFT基板和CF基板以非接触方式进行光学对准，每次照射的效率高，这有利于批量生产。

13. 发明申请

US20130208221A1 LCD Panel, LCD Device, and Method for manufacturing Panel 有权
标题翻译：液晶显示面板，液晶显示装置及制造方法
公开(公告)号：US20130208221A1
公开(公告)日：2013-08-15
申请号：US13519652
申请日：2012-05-22
申请人： Xiaolong Ma
发明人： Xiaolong Ma
IPC分类号： G02F1/1337 , H01J9/26 , G02F1/1339
CPC分类号： G02F1/1337 , G02F1/1339
摘要： The invention provides an LCD panel, an LCD device, and a method for manufacturing a panel. The LCD panel includes an upper substrate and a lower substrate which are arranged opposite to each other. Opposite inner sides of the upper substrate and the lower substrate are respectively provided with a layer of alignment film, a sealant is arranged between the upper substrate and the lower substrate, the alignment film is arranged to extend outside the sealant area, and a surface of the alignment film exposed outside the sealant is provided with a sealing layer. In the invention, the alignment film is arranged to extend outside the sealant, which enable a narrow frame to be used to the LCD panel, and improves the utilization rate of the substrate; moreover, the alignment film exposed outside the sealant is sealed, to completely isolate the alignment film from the outside air; thus, the alignment film cannot be hydrolyzed because of absorbing the outside vapor, thereby ensuring the display quality.
摘要翻译：本发明提供一种LCD面板，LCD装置以及面板制造方法。 LCD面板包括彼此相对布置的上基板和下基板。上基板和下基板的相对的内侧分别设置有一层取向膜，在上基板和下基板之间设置密封剂，配向膜布置成延伸到密封剂区域的外侧，暴露在密封剂外部的取向膜设置有密封层。在本发明中，取向膜布置成在密封剂的外部延伸，这使得可以将窄框架用于LCD面板，并提高基板的利用率; 此外，暴露在密封剂外部的取向膜被密封，以使取向膜与外部空气完全隔离; 因此，由于吸收外部蒸气，取向膜不能水解，从而确保了显示质量。

14. 发明申请

US20130092946A1 TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： TFT-LCD阵列基板及其制造方法
公开(公告)号：US20130092946A1
公开(公告)日：2013-04-18
申请号：US13380047
申请日：2011-11-09
申请人： Xiaolong Ma , Hungjui Chen , Tsunglung Chang
发明人： Xiaolong Ma , Hungjui Chen , Tsunglung Chang
IPC分类号： H01L27/15 , H01L21/02
CPC分类号： G02F1/136259 , G02F1/136204 , G02F1/136286 , G02F2001/136263 , G02F2001/136272 , G02F2201/18 , G02F2201/40 , G02F2201/506 , H01L27/02 , H01L27/124
摘要： The present invention provides a TFT-LCD array substrate having a gate-line metal layer, a data-line metal layer crossing the gate-line metal layer and a plurality of layers covering a periphery of the gate-line metal layer and the data-line metal layer; the gate-line metal layer has first gate lines and second gate lines parallel and alternately arranged, the date-line metal layer has first data lines and second data lines parallel and alternately arranged; the first gate line and the second gate line are electrically connected; the first data line and the second data line are electrically connected. The present invention further provides a manufacturing method of the TFT-LCD array substrate. Implementing the TFT-LCD array substrate and the manufacturing method can reduce the occurrence of line-broken in the active array of TFT-LCD, increase the aperture ratio of the product and enhance yield rate of the products.
摘要翻译：本发明提供一种TFT-LCD阵列基板，其具有栅线金属层，与栅线金属层交叉的数据线金属层和覆盖栅极线金属层周边的多个层，线金属层; 栅线金属层具有平行且交替布置的第一栅极线和第二栅极线，日期线金属层具有平行并交替布置的第一数据线和第二数据线; 第一栅极线和第二栅极线电连接; 第一数据线和第二数据线电连接。本发明还提供了TFT-LCD阵列基板的制造方法。实施TFT-LCD阵列基板及其制造方法可以减少TFT-LCD有源阵列中线路断裂的发生，提高产品的开口率，提高产品的产量。

15. 发明授权

US09276085B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09276085B2
公开(公告)日：2016-03-01
申请号：US14387143
申请日：2012-04-26
申请人： Huaxiang Yin , Xiaolong Ma , Changliang Qi , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Xiaolong Ma , Changliang Qi , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L21/02 , H01L21/332 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66575 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66636 , H01L29/7833
摘要： The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.
摘要翻译：本发明提供一种包括基板的半导体结构; 衬底上的栅极堆叠; 在栅极堆叠的侧壁上的间隔物; 通过外延生长形成在栅极堆叠的两侧的衬底中的源极/漏极结延伸; 以及在源极/漏极结延伸部的两侧上的衬底中的源极/漏极区域。因此，本发明还提供了制造半导体结构的方法。本发明可以提供具有高掺杂浓度和低结深度的源极/漏极结延伸，从而有效地改善了半导体结构的性能。

16. 发明授权

US09054018B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09054018B2
公开(公告)日：2015-06-09
申请号：US13812503
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
发明人： Xiaolong Ma , Huaxiang Yin , Sen Xu , Huilong Zhu
IPC分类号： H01L29/06 , H01L21/84 , H01L29/15 , H01L29/66 , H01L29/78 , H01L29/10 , B82Y10/00 , H01L29/51 , H01L29/165
CPC分类号： H01L29/15 , B82Y10/00 , H01L29/1054 , H01L29/151 , H01L29/165 , H01L29/517 , H01L29/66431 , H01L29/66795 , H01L29/7781 , H01L29/785 , H01L29/7853
摘要： The present invention discloses a method for manufacturing a semiconductor device, which comprises: forming a plurality of fins on a substrate, which extend along a first direction and have rhombus-like cross-sections; forming a gate stack structure on each fin, which traverses the plurality of fins and extends along a second direction; wherein a portion in each fin that is under the gate stack structure forms a channel region of the device, and portions in each fin that are at both sides of the gate stack structure along the first direction form source and drain regions. The semiconductor device and its manufacturing method according to the present invention use rhombus-like fins to improve the gate control capability to effectively suppress the short channel effect, moreover, an epitaxial quantum well is used therein to better limit the carriers, thus improving the device drive capability.
摘要翻译：本发明公开了一种半导体器件的制造方法，其特征在于，在基板上形成沿着第一方向延伸并具有菱形状的横截面的多个翅片，在每个翅片上形成栅极堆叠结构，其横过所述多个翅片并沿着第二方向延伸; 其中位于所述栅极堆叠结构下方的每个鳍中的部分形成所述器件的沟道区，并且沿着所述第一方向位于所述栅极堆叠结构两侧的每个鳍中的部分形成源极和漏极区。根据本发明的半导体器件及其制造方法使用菱形翅片来提高栅极控制能力以有效地抑制短沟道效应，此外，在其中使用外延量子阱以更好地限制载流子，从而改善器件驱动能力。

17. 发明申请

US20140191335A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140191335A1
公开(公告)日：2014-07-10
申请号：US13812941
申请日：2012-08-27
申请人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/088
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L27/0886 , H01L29/66818 , H01L29/7845 , H01L29/785
摘要： The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.
摘要翻译：本发明公开了一种半导体器件，包括位于基片上并沿着第一方向延伸的多个翅片; 多个栅极堆叠结构，沿着第二方向延伸并穿过每个所述散热片; 多个应力层，其位于所述栅极叠层结构的两侧的所述鳍片中，并且在其中具有多个源极和漏极区域; 多个通道区域，位于所述栅极叠层结构下方的鳍中; 其特征在于，应力层在翅片中具有连接部分，并且通道区域包围连接部分。

18. 发明申请

US20140057418A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20140057418A1
公开(公告)日：2014-02-27
申请号：US13812502
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
发明人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
IPC分类号： H01L21/02 , H01L29/12
CPC分类号： H01L21/0257 , H01L21/0237 , H01L21/0245 , H01L21/02452 , H01L21/02521 , H01L21/02532 , H01L21/02535 , H01L21/02612 , H01L21/02614 , H01L21/02617 , H01L21/02639 , H01L21/268 , H01L29/1054 , H01L29/12
摘要： The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also provides a method for manufacturing a semiconductor device, comprising: forming a buffer layer on an insulating substrate; forming a first high mobility material layer on the buffer layer using the method for manufacturing the high mobility material layer; forming a second high mobility material layer on the first high mobility material layer using the method for manufacturing the high mobility material layer; and forming trench isolations and defining active regions in the first and second high mobility material layers.
摘要翻译：本发明公开了一种高迁移率材料层的制造方法，其特征在于，包括：在基板内/内形成多个前体; 并进行脉冲激光处理使得多个前体彼此反应以产生高迁移率材料层。此外，本发明还提供一种半导体器件的制造方法，包括：在绝缘基板上形成缓冲层; 使用高迁移率材料层的制造方法在缓冲层上形成第一高迁移率材料层; 使用所述高迁移率材料层的制造方法在所述第一高迁移率材料层上形成第二高迁移率材料层; 以及形成沟槽隔离并在第一和第二高迁移率材料层中限定有源区。

19. 发明申请

US20130250217A1 Liquid Crystal Display Panel and Manufacturing Method Thereof 审中-公开
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US20130250217A1
公开(公告)日：2013-09-26
申请号：US13521698
申请日：2012-04-26
申请人： Xiaolong Ma
发明人： Xiaolong Ma
IPC分类号： G02F1/1335 , B32B37/26
CPC分类号： G02F1/1339
摘要： The present invention provides a liquid crystal display panel and manufacturing method thereof. The manufacturing method includes: disposing a first and a second substrate oppositely, first substrate comprising a color filter (CF) array area and a first non-display area disposed in peripheral of CF array area, first substrate or second substrate coated with radiation curing agent corresponding to first non-display area; using curing radiation to shine on first substrate from a side of first substrate away from second substrate so that incident curing radiation to CF array area absorbed by CF array area, and incident curing radiation to first non-display area curing radiation curing agent to adhere first and second substrates. The present invention effectively solves insufficient curing problem caused by shielding of metal routes in peripheral of thin film transistor array area and reduces manufacture cost of liquid crystal display panel without UV mask.
摘要翻译：本发明提供一种液晶显示面板及其制造方法。该制造方法包括：相对配置第一和第二基板，第一基板包括滤色器（CF）阵列区域和布置在CF阵列区域周边的第一非显示区域，涂覆有辐射固化剂的第一基板或第二基板对应于第一非显示区域; 使用固化辐射从第一衬底的第二衬底的第一衬底照射到第二衬底上，使得入射的固化辐射到由CF阵列区域吸收的CF阵列区域，并且入射固化辐射到第一非显示区域固化辐射固化剂以首先粘附和第二基板。本发明有效地解决了薄膜晶体管阵列区域周边金属线路屏蔽不足的固化问题，降低了无紫外线掩模的液晶显示面板的制造成本。

20. 发明授权

US08234291B2 Method and system for determining junk information 有权
标题翻译：确定垃圾信息的方法和系统
公开(公告)号：US08234291B2
公开(公告)日：2012-07-31
申请号：US12445574
申请日：2007-09-25
申请人： Jingjun Ye , Xiaolong Ma , Congzhi Wang , Hao Wang
发明人： Jingjun Ye , Xiaolong Ma , Congzhi Wang , Hao Wang
IPC分类号： G06F7/00
CPC分类号： H04L51/12
摘要： The present invention is a method and a system for determining junk information related to the fields of information filtering, and can solve the problem of improperly predefined junk information. The method includes: pre-defining junk information keywords in data samples; computing keyword scores for each of the keywords; simulating filtering of the data samples using the keyword scores to obtain a filtering index value; determining whether the filtering index value satisfies an evaluation index; if not satisfied, revising the keywords or the keyword scores and repeating the simulating to obtain a new filtering index value; and if satisfied, terminating the revising. The disclosed method can help a user more reasonably define junk information keywords and keyword scores, and determine whether information is junk information based on the keywords and corresponding scores, thereby improving efficiency of information filtering. The invention can be widely adopted in a variety of applications and systems such as feedback systems, guestbook systems, forums and junk mail processing.
摘要翻译：本发明是用于确定与信息过滤领域相关的垃圾信息的方法和系统，并且可以解决不正确预定义的垃圾信息的问题。该方法包括：在数据样本中预先定义垃圾信息关键字; 计算每个关键字的关键词分数; 使用关键词分数模拟数据样本的过滤以获得过滤指标值; 确定所述过滤指标值是否满足评价指标; 如果不满足，修改关键词或关键词分数，并重复模拟以获得新的过滤索引值; 如果满意，终止修改。所公开的方法可以帮助用户更合理地定义垃圾信息关键词和关键词分数，并且基于关键字和对应的分数来确定信息是垃圾信息，从而提高信息过滤的效率。本发明可广泛应用于各种应用和系统，如反馈系统，留言系统，论坛和垃圾邮件处理。

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