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11. 发明授权

US07686927B1 Methods and apparatus for controlled-angle wafer positioning 有权
标题翻译：受控角度晶片定位的方法和装置
公开(公告)号：US07686927B1
公开(公告)日：2010-03-30
申请号：US11510048
申请日：2006-08-25
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
IPC分类号： C25D17/00
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译：在电镀过程中控制晶片相对于电解质表面的取向。将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

12. 发明授权

US06500321B1 Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target 失效
标题翻译：通过溅射靶的几何成形来控制磁控溅射中的侵蚀特征和工艺特性
公开(公告)号：US06500321B1
公开(公告)日：2002-12-31
申请号：US09519429
申请日：2000-03-02
申请人： Kaihan A. Ashtiani , Larry D. Hartsough , Richard S. Hill , Karl B. Levy , Robert M. Martinson
发明人： Kaihan A. Ashtiani , Larry D. Hartsough , Richard S. Hill , Karl B. Levy , Robert M. Martinson
IPC分类号： C23C1435
CPC分类号： H01J37/3423 , C23C14/3407 , H01J37/3405 , H01J37/347
摘要： An apparatus and method for controlling and optimizing a non-planar target shape of a sputtering magnetron system are employed to minimize the redeposition of the sputtered material and optimize target erosion. The methodology is based on the integration of sputtered material from each point of the target according to its solid angle view of the rest of the target. The prospective target's geometry is optimized by analytically comparing and evaluating the methodology's results of one target geometry against that of another geometry, or by simply altering the first geometry and recalculating and comparing the results of the first geometry against the altered geometry. The target geometries may be of many different shapes including trapezoidal, cylindrical, parabolic, and elliptical, depending upon the optimum process parameters desired. A sputtering system is developed using this methodology, having a main magnet stack, a rotating magnet, a target having selected target shapes optimized for controlling erosion, downstream magnets, a substrate, and an electric field induced plasma stream.
摘要翻译：采用用于控制和优化溅射磁控管系统的非平面目标形状的装置和方法来最小化溅射材料的再沉积并优化目标侵蚀。该方法基于从目标的每个点的溅射材料的整合，根据其目标的其余部分的立体角度视图。通过分析比较和评估一种目标几何体的结果与另一种几何结构的方法的结果，或简单地改变第一几何并重新计算并比较第一几何的结果与改变的几何结构，来优化预期目标的几何形状。取决于所需的最佳工艺参数，目标几何形状可以是许多不同的形状，包括梯形，圆柱形，抛物线形和椭圆形。使用该方法开发溅射系统，其具有主磁体堆叠，旋转磁体，具有针对控制侵蚀优化的所选目标形状的目标，下游磁体，基板和电场感应等离子体流。

13. 发明授权

US08158532B2 Topography reduction and control by selective accelerator removal 有权
标题翻译：通过选择性促进剂去除的地形减少和控制
公开(公告)号：US08158532B2
公开(公告)日：2012-04-17
申请号：US11602128
申请日：2006-11-20
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： H01L21/302
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.
摘要翻译：电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。在介电层中选择性地施加电镀加速器和填充宽特征腔。

14. 发明申请

US20090277867A1 Topography reduction and control by selective accelerator removal 有权
标题翻译：通过选择性促进剂去除的地形减少和控制
公开(公告)号：US20090277867A1
公开(公告)日：2009-11-12
申请号：US11602128
申请日：2006-11-20
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： B44C1/22 , B05D5/12
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.
摘要翻译：电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。在介电层中选择性地施加电镀加速器和填充宽特征腔。

15. 发明授权

US07097410B1 Methods and apparatus for controlled-angle wafer positioning 有权
标题翻译：受控角度晶片定位的方法和装置
公开(公告)号：US07097410B1
公开(公告)日：2006-08-29
申请号：US10379858
申请日：2003-03-04
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
IPC分类号： B65G47/90 , C25D5/00
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译：在电镀过程中控制晶片相对于电解质表面的取向。将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

16. 发明授权

US07799200B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US07799200B1
公开(公告)日：2010-09-21
申请号：US11544957
申请日：2006-10-05
申请人： Steven T. Mayer , John Drewery , Richard S. Hill , Timothy Archer , Avishai Kepten
发明人： Steven T. Mayer , John Drewery , Richard S. Hill , Timothy Archer , Avishai Kepten
IPC分类号： C25F3/00 , H01L21/288 , B23H3/00
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

17. 发明授权

US07727863B1 Sonic irradiation during wafer immersion 有权
标题翻译：晶片浸入时的声光照射
公开(公告)号：US07727863B1
公开(公告)日：2010-06-01
申请号：US12286243
申请日：2008-09-29
申请人： Bryan L. Buckalew , Jonathan D. Reid , Johanes H. Sukamto , Frederick Dean Wilmot , Richard S. Hill
发明人： Bryan L. Buckalew , Jonathan D. Reid , Johanes H. Sukamto , Frederick Dean Wilmot , Richard S. Hill
IPC分类号： H01L21/322
CPC分类号： C25D7/123 , C23C18/1666 , C25D5/20 , C25D21/04 , H01L21/288 , H01L21/2885
摘要： Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.
摘要翻译：当旋转倾斜的晶片被浸入液体处理槽中时，将声波辐射施加到旋转的倾斜晶片的平面表面的晶片部分。该部分包括晶片的引导外缘区域。晶片部分的面积显着小于平面晶片表面的总表面积。功率密度最小化。结果，从晶片表面去除了气泡，并避免了液槽中的气蚀。在一些实施方案中，液体浴被去气以抑制气泡形成。

18. 发明申请

US20090280649A1 Topography reduction and control by selective accelerator removal 有权
公开(公告)号：US20090280649A1
公开(公告)日：2009-11-12
申请号：US11890790
申请日：2007-08-06
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： H01L21/44 , C25D17/00 , H01L21/306
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

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