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11. 发明申请

US20060099733A1 Semiconductor package and fabrication method 审中-公开
标题翻译：半导体封装及制造方法
公开(公告)号：US20060099733A1
公开(公告)日：2006-05-11
申请号：US10985312
申请日：2004-11-09
申请人： Frank Geefay , Richard Ruby
发明人： Frank Geefay , Richard Ruby
IPC分类号： H01L21/44
CPC分类号： H01L21/50 , B81C1/00269 , B81C2203/0118 , H01L21/6835
摘要： The present invention provides a first wafer and a second wafer having a device. A separation layer is formed on the first wafer. A cap is formed on the separation layer. The cap and the second wafer are bonded using a gasket. The first wafer is separated from the cap to form the semiconductor package comprised of the cap, the gasket, and the second wafer.
摘要翻译：本发明提供了具有装置的第一晶片和第二晶片。在第一晶片上形成分离层。在分离层上形成盖。盖和第二晶片使用垫圈结合。第一晶片与盖分离以形成由盖，垫圈和第二晶片组成的半导体封装。

12. 发明申请

US20070026836A1 Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit 有权
标题翻译：用于选择性地阻挡射频（RF）切换电路中的射频（RF）信号的方法和装置
公开(公告)号：US20070026836A1
公开(公告)日：2007-02-01
申请号：US11190611
申请日：2005-07-27
申请人： Yut Chow , Richard Ruby , Chong Chee
发明人： Yut Chow , Richard Ruby , Chong Chee
IPC分类号： H04B1/28
CPC分类号： H03J5/244 , H03J2200/10 , H03K17/687 , H03K17/74
摘要： An RF switching circuit that incorporates a film bulk acoustic resonator (FBAR) device and one or more capacitors that are used to vary the capacitance of the FBAR device to change the frequency range that is blocked by the FBAR device. When the RF switching circuit is in a first switching state, a first set of RF signals in a first frequency range is blocked by the RF switching circuit while RF signals of other frequencies are passed by the RF switching circuit. When the RF switching circuit is in a second switching state, a second set of RF signals in a second frequency range is blocked by the RF switching circuit while RF signals of other frequencies are passed by the RF switching circuit.
摘要翻译：一种RF切换电路，其包括膜体声波谐振器（FBAR）器件和一个或多个电容器，用于改变FBAR器件的电容以改变由FBAR器件阻塞的频率范围。当RF开关电路处于第一开关状态时，RF开关电路阻止第一频率范围的第一组RF信号，而RF开关电路通过其他频率的RF信号。当RF开关电路处于第二开关状态时，RF开关电路阻止第二频率范围的第二组RF信号，而RF开关电路通过其他频率的RF信号。

13. 发明申请

US20070020807A1 Protective structures and methods of fabricating protective structures over wafers 审中-公开
标题翻译：在晶片上制造保护结构的保护结构和方法
公开(公告)号：US20070020807A1
公开(公告)日：2007-01-25
申请号：US11540412
申请日：2006-09-28
申请人： Frank Geefay , Richard Ruby
发明人： Frank Geefay , Richard Ruby
IPC分类号： H01L21/00
CPC分类号： H01L21/50 , B81C1/00269 , B81C2203/0118 , H01L21/6835
摘要： A method of fabricating a protective structure and a packaged structure are described.
摘要翻译：描述了制造保护结构和封装结构的方法。

14. 发明申请

US20060087386A1 Arrangement of lattice filter 有权
标题翻译：晶格滤波器的布置
公开(公告)号：US20060087386A1
公开(公告)日：2006-04-27
申请号：US10974078
申请日：2004-10-26
申请人： Kun Wang , Michael Frank , Richard Ruby
发明人： Kun Wang , Michael Frank , Richard Ruby
IPC分类号： H03H9/70 , H03H9/54
CPC分类号： H03H9/0095
摘要： A filter and method of manufacturing a filter having a lattice arrangement that efficiently utilizes substrate space. An embodiment of the invention is directed to a filter having a plurality of resonators disposed on a substrate, each resonator comprising a first electrode and a second electrode disposed vertically adjacent such that an acoustic cavity of a piezoelectric material is formed between each first electrode and each second electrode of each resonator, the first and second electrodes of each resonator electrically isolated from each other via the piezoelectric material. In this manner, the filter is realized without having to use any vias. Additionally, the resonators may be of a shape that allows each to be disposed close together such that some sides of each of the resonators are parallel to each other. Thus, substrate space can be preserved even further.
摘要翻译：一种制造具有有效利用衬底空间的晶格布置的滤光器的滤光器和方法。本发明的实施例涉及一种具有设置在基板上的多个谐振器的滤波器，每个谐振器包括第一电极和垂直相邻设置的第二电极，使得在每个第一电极和每个第一电极之间形成压电材料的声腔每个谐振器的第二电极，每个谐振器的第一和第二电极经由压电材料彼此电隔离。以这种方式，实现过滤器而不必使用任何通孔。此外，谐振器可以是允许每个谐振器彼此靠近放置的形状，使得每个谐振器的一些侧面彼此平行。因此，可以进一步保持基板空间。

15. 发明申请

US20060016070A1 Vertically separated acoustic filters and resonators 失效
公开(公告)号：US20060016070A1
公开(公告)日：2006-01-26
申请号：US11203003
申请日：2005-08-11
申请人： Richard Ruby , John Larson
发明人： Richard Ruby , John Larson
IPC分类号： H05K3/10
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

16. 发明申请

US20050275486A1 Acoustic resonator performance enhancements using recessed region 有权
标题翻译：使用凹陷区域的声谐振器性能增强
公开(公告)号：US20050275486A1
公开(公告)日：2005-12-15
申请号：US10867540
申请日：2004-06-14
申请人： Hongiun Feng , Ronald Fazzio , Paul Bradley , Richard Ruby
发明人： Hongiun Feng , Ronald Fazzio , Paul Bradley , Richard Ruby
IPC分类号： H03H9/02 , H03H9/17 , H03H9/54
CPC分类号： H03H9/02118 , H03H9/02149 , H03H9/173
摘要： An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.
摘要翻译：声谐振器包括基板，第一电极，压电材料层，第二电极和凹陷区域。衬底具有第一表面。第一电极邻近衬底的第一表面。压电材料层与第一电极相邻。第二电极与压电材料层相邻。第二电极具有形状为多边形的第二电极周边。凹陷区域与第二电极相邻。凹陷区域具有限定凹陷区域周边的形状。凹陷区域周边相对于第二电极周边凹进。

17. 发明申请

US20050184830A1 Vertically separated acoustic filters and resonators 失效
标题翻译：垂直分离的声学滤波器和谐振器
公开(公告)号：US20050184830A1
公开(公告)日：2005-08-25
申请号：US10785525
申请日：2004-02-23
申请人： Richard Ruby , John Larson
发明人： Richard Ruby , John Larson
IPC分类号： H01L41/09 , H01L41/08 , H03H3/02 , H03H9/05 , H03H9/17 , H03H9/205 , H03H9/58 , H03H9/60
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.
摘要翻译：公开了一种包括垂直分离的声谐振器的装置。该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

18. 发明申请

US20050093655A1 Film acoustically-coupled transformer 有权
标题翻译：薄膜声耦合变压器
公开(公告)号：US20050093655A1
公开(公告)日：2005-05-05
申请号：US10965637
申请日：2004-10-13
申请人： John Larson , Richard Ruby , Stephen Ellis
发明人： John Larson , Richard Ruby , Stephen Ellis
IPC分类号： H03H9/02 , H03H9/13 , H03H9/58 , H03H9/60
CPC分类号： H03H9/605 , H03H9/02102 , H03H9/132 , H03H9/175 , H03H9/584 , H03H9/587 , H03H9/589
摘要： One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
摘要翻译：薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器包括声去耦材料层。每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。一些实施例另外电平衡。

19. 发明授权

US07612636B2 Impedance transforming bulk acoustic wave baluns 有权
标题翻译：阻抗变换体积声波平衡不平衡变压器
公开(公告)号：US07612636B2
公开(公告)日：2009-11-03
申请号：US11343117
申请日：2006-01-30
申请人： Tiberiu Jamneala , John D. Larson, III , Richard Ruby
发明人： Tiberiu Jamneala , John D. Larson, III , Richard Ruby
IPC分类号： H03H9/54 , H03H9/60
CPC分类号： H03H9/584 , H03H9/0095 , H03H9/587 , H03H9/589
摘要： A bulk acoustic wave device includes an acoustic decoupler between first and second film bulk acoustic resonators (FBARs). The first FBAR is resonant at a resonant frequency of the device and includes first and second planar electrodes abutting opposite sides of a first resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to a propagation axis normal to the first and second electrodes. The first FBAR has a first electrical impedance parallel to the propagation axis. The second FBAR is resonant at the resonant frequency and includes third and fourth planar electrodes abutting opposite sides of a second resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to the propagation axis. The second FBAR has a second electrical impedance parallel to the propagation axis and different from the first electrical impedance.
摘要翻译：体声波器件包括第一和第二膜体声波谐振器（FBAR）之间的声耦合器。第一FBAR以该器件的谐振频率谐振，并且包括第一和第二平面电极，该第一和第二平面电极邻接第一谐振器体的相对侧，第一谐振器体积不含任何中间电极，并且包含压电材料，该压电材料设置为平行于垂直于第一谐振器的传播轴的声振动，第二电极。第一个FBAR具有平行于传播轴的第一个电阻抗。第二FBAR在谐振频率下谐振，并且包括第三和第四平面电极，其邻接没有任何中间电极的第二谐振器体的相对侧，并且包含被设置用于平行于传播轴的声学振动的压电材料。第二FBAR具有平行于传播轴线并且不同于第一电阻抗的第二电阻抗。

20. 发明授权

US07280007B2 Thin film bulk acoustic resonator with a mass loaded perimeter 有权
标题翻译：具有质量负载周长的薄膜体声波谐振器
公开(公告)号：US07280007B2
公开(公告)日：2007-10-09
申请号：US10990201
申请日：2004-11-15
申请人： Hongjun Feng , R. Shane Fazzio , Richard Ruby , Paul Bradley
发明人： Hongjun Feng , R. Shane Fazzio , Richard Ruby , Paul Bradley
IPC分类号： H03H9/00 , H03H9/09
CPC分类号： H03H9/02118 , H03H9/173 , H03H9/177
摘要： A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).
摘要翻译：由电极制成的谐振器结构（FBAR）夹着压电材料。两个导电电极的交点定义了声谐振器的有效面积。活动区域分为两个同心区域; 周边或框架，以及中央区域。在两个导电电极中的一个上添加环，以改善电性能（以Q为单位）。

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