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    • 11. 发明授权
    • Differential current mode output circuit for electro-optical sensor arrays
    • 差分电流模式输出电路用于电光传感器阵列
    • US06344651B1
    • 2002-02-05
    • US09427645
    • 1999-10-27
    • James T. WoolawayWilliam J. ParrishStephen H. Black
    • James T. WoolawayWilliam J. ParrishStephen H. Black
    • H03F345
    • G01J5/24H03F3/082H03F3/45197H03F3/68H03F2203/45652H03F2203/45658H03F2203/45682H04N5/33
    • A differential current mode amplifier circuit (5,5′) includes a first circuit leg having a first current source providing a current I1 coupled in series with a first transistor (m1) at a first circuit node (n1). The first transistor has a control terminal for coupling to an input signal potential (Vs). Vs is obtained from a unit cell of a radiation detector array, and is indicative of a magnitude of an integrated, photon-induced charge. The first circuit leg outputs a first output current (Is). A second circuit leg includes a second current source providing a current I2 coupled in series with a second transistor (m2) at a second circuit node (n2). The second transistor has a control terminal for coupling to an input reference potential (Vr). The second circuit leg outputs a second output current (Ir). A resistance (Rs) is coupled between the first circuit leg and the second circuit leg at the first circuit node and the second node. The current flow through Rs is proportional to a difference between Vs and Vr, and is thus indicative of a magnitude of Vs.
    • 差分电流模式放大器电路(5,5')包括具有第一电流源的第一电路支路,该第一电流源提供与第一电路节点(n1)上的第一晶体管(m1)串联耦合的电流I1。 第一晶体管具有用于耦合到输入信号电位(Vs)的控制端子。 Vs是从放射线检测器阵列的单位单元获得的,并且表示积分的光子诱导电荷的大小。 第一电路支路输出第一输出电流(Is)。 第二电路支路包括提供与第二电路节点(n2)上的第二晶体管(m2)串联耦合的电流I2的第二电流源。 第二晶体管具有用于耦合到输入参考电位(Vr)的控制端子。 第二电路支路输出第二输出电流(Ir)。 电阻(Rs)在第一电路节点和第二节点处耦合在第一电路支路和第二电路支路之间。 通过Rs的电流与Vs和Vr之间的差成比例,因此表示Vs的大小。
    • 15. 发明授权
    • Near complete charge transfer device
    • 近完全电荷转移装置
    • US6133596A
    • 2000-10-17
    • US296047
    • 1999-04-21
    • James T. WoolawayWilliam J. ParrishStephen H. Black
    • James T. WoolawayWilliam J. ParrishStephen H. Black
    • H01L27/146H01L29/768H01L27/148
    • H01L27/146H01L29/768
    • A charge transfer structure (30) includes a substrate comprised of semiconductor material and, coupled to a surface of the substrate, a plurality of serially coupled devices each having a gate terminal. The plurality of serially coupled devices include a first single port device (D1) defining a first primary charge storage well, a second single port device (D3) defining a second primary charge storage well, a first two port device (D2) defining a first transfer device, a second two port device (D4) defining a second transfer device, and two instances of a third two port device each defining a cascode device (CD). The ports of these devices are serially coupled together in an order given by D1, D2, CD, D3, D4, CD for transferring charge between the first and second primary charge storage wells. Charge is inserted into and withdrawn from each of the first and second primary charge storage wells through a single diffusion that functions as both an input port and an output port. A clock signal (P1) applied to the gate of D1 and a clock signal (P3) applied to the gate of D3 are each predetermined to deplete an underlying surface region of the substrate for forming the first primary charge storage well and the second primary charge storage well, respectively, without requiring the use of diffusion implants as in conventional bucket brigade devices.
    • 电荷转移结构(30)包括由半导体材料构成的衬底,并且耦合到衬底的表面,每个具有栅极端子的多个串联耦合器件。 多个串联耦合器件包括限定第一初级电荷存储阱的第一单端口器件(D1),限定第二电荷存储阱的第二单端口器件(D3),限定第一电荷存储阱 传输设备,定义第二传送设备的第二双端口设备(D4)和每个定义共享共享设备(CD)的第三双端口设备的两个实例。 这些器件的端口以D1,D2,CD,D3,D4,CD给出的顺序串联在一起,用于在第一和第二主要电荷存储阱之间传送电荷。 通过用作输入端口和输出端口的单个扩散器将电荷插入并从每个第一和第二主电荷存储阱中抽出。 施加到D1的栅极的时钟信号(P1)和施加到D3的栅极的时钟信号(P3)都被预先设定,以消耗用于形成第一初级电荷存储阱的基板的下表面区域和第二主要电荷 存储井,而不需要使用扩散植入物,如在常规斗式装置中。
    • 17. 发明授权
    • Input circuit for infrared detector
    • 红外探测器输入电路
    • US4633086A
    • 1986-12-30
    • US721425
    • 1985-04-09
    • William J. Parrish
    • William J. Parrish
    • H01L27/148H01L27/14
    • H01L27/14881
    • A method and circuit are provided for interfacing an infrared detector to a common power supply and signal processing circuitry. A multichannel input circuit including a plurality of buffer circuits and a common bias network is formed on a single semiconductor substrate. The common bias network reduces the necessary connections between the substrate and the external power supply. The bias network is operative to reduce power level variations in the signal from the external power supply. Each channel includes a negative feedback circuit to maintain a dedicated detector in a zero bias condition, thus reducing 1/f noise and enhancing the signal-to-noise ratio of the circuit. The load to each channel is adjustable to maintain the detector in the zero bias condition.
    • 提供了用于将红外检测器与公共电源和信号处理电路接口​​的方法和电路。 包括多个缓冲电路和公共偏置网络的多通道输入电路形成在单个半导体衬底上。 普通偏置网络减少了基板和外部电源之间的必要连接。 偏置网络用于降低来自外部电源的信号的功率电平变化。 每个通道包括负反馈电路,以将专用检测器保持在零偏置状态,从而降低1 / f噪声并提高电路的信噪比。 每个通道的负载是可调节的,以将检测器保持在零偏置状态。
    • 18. 发明授权
    • Method for wafer scale testing of redundant integrated circuit dies
    • 冗余集成电路管芯晶圆规模测试方法
    • US5053700A
    • 1991-10-01
    • US532059
    • 1990-06-01
    • William J. Parrish
    • William J. Parrish
    • G01R31/28G01R31/317G01R31/3185G06F11/22G06F11/26G11C29/00H01L21/66
    • H01L22/22G01R31/2831G01R31/31712G01R31/31715G01R31/318505G01R31/318511G06F11/26G11C29/006G06F11/2273H01L2924/0002
    • A wafer scale test system for testing redundant integrated circuit dies formed on a semiconductor wafer includes wafer scale test pads formed on the wafer and interchip multiplexor means for directing test signals applied to the wafer scale test pads to the individual integrated circuit dies. The interchip multiplexor means includes an input/output buffer circuit for receiving test signals from the wafer pads and applying the test signals to selected interchip multiplexor lines routed to the individual circuit dies. Readouts from output pads on said integrated circuit dies are routed back through the input/output buffer circuit to the wafer test pads to provide test output signals. Low cross-section connecting means are provided across dicing lanes between the integrated circuit die contact pads and the interchip multiplexor lines to avoid shorting during the dicing operation. Additionally, line protection circuits are provided to prevent destruction of the integrated circuit dies should shorting occur during dicing. The integrated circuit dies and wafer scale test system may optionally be partitioned into several separate groups to prevent faults in the interchip multiplexor system from rendering the entire wafer useless.
    • 用于测试形成在半导体晶片上的冗余集成电路管芯的晶片级测试系统包括晶片上形成的晶片刻度测试焊盘和用于将施加到晶片尺度测试焊盘上的测试信号引导到各个集成电路管芯的芯片间复用器装置。 芯片间复用器装置包括用于接收来自晶片焊盘的测试信号的输入/输出缓冲电路,并将测试信号施加到被路由到各个电路管芯的选定的芯片间多路复用器线路。 所述集成电路管芯上的输出焊盘的读出通过输入/输出缓冲电路返回到晶片测试焊盘,以提供测试输出信号。 在集成电路裸片接触焊盘和芯片间复用器线之间的切割通道之间提供低横截面连接装置,以避免在切割操作期间的短路。 此外,提供线路保护电路以防止在切割期间发生短路时集成电路芯片的破坏。 集成电路管芯和晶片刻度测试系统可以可选地分成几个单独的组,以防止芯片间复用器系统中的故障使整个晶片无用。