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11. 发明授权

US08048756B2 Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing 有权
标题翻译：利用包括电化学 - 机械抛光在内的多种蚀刻工艺去除在BPSG层的孔外形成的金属层的方法
公开(公告)号：US08048756B2
公开(公告)日：2011-11-01
申请号：US12731049
申请日：2010-03-24
申请人： Whonchee Lee , Scott G. Meikle , Guy T. Blalock
发明人： Whonchee Lee , Scott G. Meikle , Guy T. Blalock
IPC分类号： H01L21/8242
CPC分类号： H01L21/31053 , H01L21/3212 , H01L21/32125 , H01L28/65 , H01L28/91
摘要： A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.
摘要翻译：一种用于从微电子衬底去除相邻的导电和非导电材料的微电子衬底和方法。在一个实施例中，微电子衬底包括具有设置在孔中的导电材料（例如铂）的孔的衬底材料（例如硼磷硅酸盐玻璃）和邻近导电的孔中的填充材料（例如磷硅玻璃）材料。填充材料可以具有约0.04GPa或更高的硬度，并且例如在从孔中去除填充材料之后，诸如电极的微电子结构可以设置在孔中。孔的外部的导电和填充材料的部分可以通过化学机械抛光填充材料，将填充材料从导电材料向内凹陷，以及电化学机械抛光导电材料来去除。硬填充材料可以抵抗导电颗粒的渗透，并且凹陷填充材料可以提供更全面地去除孔的外部的导电材料。

12. 发明授权

US07972485B2 Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate 有权
标题翻译：从微电子衬底机电和/或电化学 - 机械去除导电材料的方法和装置
公开(公告)号：US07972485B2
公开(公告)日：2011-07-05
申请号：US12561824
申请日：2009-09-17
申请人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
发明人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
IPC分类号： C25F7/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , C25F7/00
摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.
摘要翻译：从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。第一和第二电极的至少一部分可以从抛光表面凹陷。诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

13. 发明申请

US20100006428A1 METHODS AND APPARATUS FOR ELECTROMECHANICALLY AND/OR ELECTROCHEMICALLY-MECHANICALLY REMOVING CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE 有权
标题翻译：用于电化学和/或电化学机械地从微电子基板去除导电材料的方法和装置
公开(公告)号：US20100006428A1
公开(公告)日：2010-01-14
申请号：US12561824
申请日：2009-09-17
申请人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
发明人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
IPC分类号： C25B9/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , C25F7/00
摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.
摘要翻译：从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。第一和第二电极的至少一部分可以从抛光表面凹陷。诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

14. 发明授权

US07618528B2 Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate 失效
标题翻译：从微电子衬底机电和/或电化学 - 机械去除导电材料的方法和装置
公开(公告)号：US07618528B2
公开(公告)日：2009-11-17
申请号：US11616683
申请日：2006-12-27
申请人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
发明人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
IPC分类号： B23H5/06 , C25D17/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , C25F7/00
摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.
摘要翻译：从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。第一和第二电极的至少一部分可以从抛光表面凹陷。诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

15. 发明申请

US20070281493A1 Methods of shaping vertical single crystal silicon walls and resulting structures 有权
标题翻译：垂直单晶硅壁和结构的垂直方法
公开(公告)号：US20070281493A1
公开(公告)日：2007-12-06
申请号：US11445544
申请日：2006-06-02
申请人： Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
发明人： Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/30608 , H01L21/302 , H01L21/31116 , H01L21/76232 , H01L29/66818
摘要： A single crystal silicon etching method includes providing single crystal silicon substrate having at least one trench therein. The substrate is exposed to an anisotropic etchant which undercuts the silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
摘要翻译：单晶硅蚀刻方法包括提供在其中具有至少一个沟槽的单晶硅衬底。将衬底暴露于削弱硅的各向异性蚀刻剂。通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

16. 发明申请

US20070278183A1 Wet etch suitable for creating square cuts in si and resulting structures 失效
标题翻译：湿蚀刻适用于在si和结构结构中产生正方形切口
公开(公告)号：US20070278183A1
公开(公告)日：2007-12-06
申请号：US11445718
申请日：2006-06-02
申请人： Whonchee Lee , Janos Fucsko , David H. Wells
发明人： Whonchee Lee , Janos Fucsko , David H. Wells
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： H01L21/30608 , B81B2203/033 , B81B2203/0338 , B81C1/00626 , C30B29/06 , C30B33/10
摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.
摘要翻译：单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。当沿<100>方向图案化时，所得结构包括底切特征。

17. 发明授权

US07134934B2 Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium 有权
公开(公告)号：US07134934B2
公开(公告)日：2006-11-14
申请号：US10230972
申请日：2002-08-29
申请人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
发明人： Whonchee Lee , Scott E. Moore , Scott G. Meikle
IPC分类号： B24B49/00
CPC分类号： C25F7/00 , B23H5/08 , C25F3/14
摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

18. 发明申请

US20060249397A1 Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium 失效
公开(公告)号：US20060249397A1
公开(公告)日：2006-11-09
申请号：US11482586
申请日：2006-07-06
申请人： Whonchee Lee , Scott Moore , Scott Meikle
发明人： Whonchee Lee , Scott Moore , Scott Meikle
IPC分类号： B23H7/14
CPC分类号： C25F7/00 , B23H5/08 , C25F3/14
摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

19. 发明申请

US20050056550A1 Methods and apparatus for removing conductive material from a microelectronic substrate 失效
标题翻译：从微电子衬底去除导电材料的方法和装置
公开(公告)号：US20050056550A1
公开(公告)日：2005-03-17
申请号：US10923441
申请日：2004-08-20
申请人： Whonchee Lee , Scott Moore , Brian Vaartstra
发明人： Whonchee Lee , Scott Moore , Brian Vaartstra
IPC分类号： B23H3/00 , B23H5/06 , B23H5/08 , B24B37/04 , C25F7/00 , C25D5/02
CPC分类号： B23H5/08 , B23H3/00 , B23H5/06 , B24B37/042 , C25F7/00
摘要： A method and apparatus for removing conductive material from a microelectronic substrate is disclosed. One method includes disposing an electrolytic liquid between a conductive material of a substrate and at least one electrode, with the electrolytic liquid having about 80% water or less. The substrate can be contacted with a polishing pad material, and the conductive material can be electrically coupled to a source of varying electrical signals via the electrolytic liquid and the electrode. The method can further include applying a varying electrical signal to the conductive material, moving at least one of the polishing pad material and the substrate relative to the other, and removing at least a portion of the conductive material while the electrolytic liquid is adjacent to the conductive material. By limiting/controlling the amount of water in the electrolytic liquid, an embodiment of the method can remove the conductive material with a reduced downforce.
摘要翻译：公开了一种用于从微电子衬底去除导电材料的方法和装置。一种方法包括在基板的导电材料和至少一个电极之间设置电解液，电解液具有约80％的水或更少的水。衬底可以与抛光垫材料接触，并且导电材料可以经由电解液和电极电耦合到具有变化的电信号的源。该方法可以进一步包括向导电材料施加变化的电信号，相对于另一个移动抛光垫材料和衬底中的至少一个，以及在电解液邻近该导电材料的同时移除至少一部分导电材料导电材料。通过限制/控制电解液中的水量，该方法的一个实施例可以以降低的下压力去除导电材料。

20. 发明申请

US20050034999A1 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate 审中-公开
标题翻译：从微电子衬底电气和/或化学机械去除导电材料的方法和装置
公开(公告)号：US20050034999A1
公开(公告)日：2005-02-17
申请号：US10926202
申请日：2004-08-24
申请人： Whonchee Lee , Scott Meikle , Scott Moore
发明人： Whonchee Lee , Scott Meikle , Scott Moore
IPC分类号： B23H3/00 , B23H5/08 , B24B1/00 , B24B7/19 , H01L21/8242 , H01L29/00
CPC分类号： B23H5/08 , B24B1/002
摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.
摘要翻译：一种用于从微电子衬底去除导电材料的方法和装置。在一个实施例中，支撑构件相对于材料去除介质支撑微电子衬底，其可以包括第一和第二电极以及抛光垫。一个或多个电解质设置在电极和微电子衬底之间以将电极电连接到微电子衬底。然后将电极耦合到电流从基板电除去导电材料的变化的电流源。微电子衬底和/或电极可以相对于彼此移动以相对于微电子衬底的选定部分定位电极，和/或抛光微电子衬底。材料去除介质可以从微电子衬底和/或电极去除在该过程期间形成的气体。介质还可以具有不同的第一和第二电特性，以提供与微电子衬底的不同区域的不同水平的电耦合。

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