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11. 发明授权

US08781767B2 Systems and methods for data anomaly detection 有权
标题翻译：数据异常检测系统和方法
公开(公告)号：US08781767B2
公开(公告)日：2014-07-15
申请号：US13213899
申请日：2011-08-19
申请人： Bethany Hoogs , Jason Black , Yi Zhang , Weiwei Chen , Ming Li
发明人： Bethany Hoogs , Jason Black , Yi Zhang , Weiwei Chen , Ming Li
IPC分类号： G06F19/00
CPC分类号： G06Q10/0631 , G06Q10/04 , H02J3/00 , H02J2003/003 , H02J2003/007 , Y02E60/76 , Y02P90/82 , Y04S10/54 , Y04S40/22
摘要： Systems and methods for performing data anomaly detection and/or removal are usable to accurately assess baseline power consumption. According to one embodiment of the invention, a system can be provided. The system can be operable to receive energy consumption data of a location; select, based at least in part on a collection period of the energy consumption data, an algorithm for detecting anomalies in the energy consumption data; perform the algorithm on the energy consumption data to detect the anomalies in the energy consumption data; and determine an energy consumption baseline for the location based at least in part on a result of the algorithm.
摘要翻译：用于执行数据异常检测和/或移除的系统和方法可用于准确评估基线功耗。根据本发明的一个实施例，可以提供一种系统。该系统可操作以接收位置的能量消耗数据; 至少部分地基于能量消耗数据的收集周期来选择用于检测能量消耗数据中的异常的算法; 执行能耗数据算法，检测能耗数据中的异常情况; 并且至少部分地基于所述算法的结果来确定所述位置的能量消耗基准。

12. 发明申请

US20110049587A1 Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device 有权
标题翻译：形成锗化硅层的方法，包括硅化锗层的半导体器件以及半导体器件的制造方法
公开(公告)号：US20110049587A1
公开(公告)日：2011-03-03
申请号：US12926227
申请日：2010-11-03
申请人： Chang-wook Moon , Hyun-deok Yang , Joong S. Jeon , Hwa-sung Rhee , Nae-in Lee , Weiwei Chen
发明人： Chang-wook Moon , Hyun-deok Yang , Joong S. Jeon , Hwa-sung Rhee , Nae-in Lee , Weiwei Chen
IPC分类号： H01L29/78
CPC分类号： H01L29/7848 , H01L21/28518 , H01L29/165 , H01L29/66636 , H01L29/78
摘要： Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.
摘要翻译：示例性实施例涉及形成锗（锗）硅化物层的方法，包括锗硅化物层的半导体器件以及制造半导体器件的方法。根据示例性实施方案的形成锗硅化物层的方法可以包括在硅锗（SiGe）层上形成包括钒（V）的金属层。金属层可以具有多层结构，并且还可以包括铂（Pt）和镍（Ni）中的至少一种。金属层可以退火以形成硅化锗层。可以使用激光尖峰退火（LSA）方法进行退火。

13. 发明申请

US20090146183A1 Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device 有权
标题翻译：形成锗化硅层的方法，包括硅化锗层的半导体器件以及半导体器件的制造方法
公开(公告)号：US20090146183A1
公开(公告)日：2009-06-11
申请号：US12078750
申请日：2008-04-04
申请人： Chang-wook Moon , Hyun-deok Yang , Joong S. Jeon , Hwa-sung Rhee , Nae-in Lee , Weiwei Chen
发明人： Chang-wook Moon , Hyun-deok Yang , Joong S. Jeon , Hwa-sung Rhee , Nae-in Lee , Weiwei Chen
IPC分类号： H01L29/78 , H01L21/20 , H01L21/335
CPC分类号： H01L29/7848 , H01L21/28518 , H01L29/165 , H01L29/66636 , H01L29/78
摘要： Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.
摘要翻译：示例性实施例涉及形成锗（锗）硅化物层的方法，包括锗硅化物层的半导体器件以及制造半导体器件的方法。根据示例性实施方案的形成锗硅化物层的方法可以包括在硅锗（SiGe）层上形成包括钒（V）的金属层。金属层可以具有多层结构，并且还可以包括铂（Pt）和镍（Ni）中的至少一种。金属层可以退火以形成硅化锗层。可以使用激光尖峰退火（LSA）方法进行退火。

14. 发明授权

US09562302B2 Plating or coating method for producing metal-ceramic coating on a substrate 有权
标题翻译：在基板上制造金属陶瓷涂层的电镀或涂布方法
公开(公告)号：US09562302B2
公开(公告)日：2017-02-07
申请号：US13381487
申请日：2010-06-29
申请人： Wei Gao , Weiwei Chen
发明人： Wei Gao , Weiwei Chen
IPC分类号： C23C18/16 , C25D15/02 , C23C18/31 , C25D21/14 , C25D3/12 , C25D3/56
CPC分类号： C25D15/02 , C23C18/1637 , C23C18/1662 , C23C18/31 , C25D3/12 , C25D3/562 , C25D21/14
摘要： A method for producing a metal-ceramic composite coating with increased hardness on a substrate includes adding a sol of a ceramic phase to the plating solution or electrolyte. The sol may be added prior to and/or during the plating or coating and at a rate of sol addition controlled to be sufficiently low that nanoparticles of the ceramic phase form directly onto or at the substrate and/or that the metal-ceramic coating forms on the substrate with a predominantly crystalline structure and/or to substantially avoid formation of nanoparticles of the ceramic phase, and/or agglomeration of particles of the ceramic phase, in the plating solution or electrolyte. The ceramic phase may be a single or mixed oxide, carbide, nitride, silicate, boride of Ti, W, Si, Zr, Al, Y, Cr, Fe, Pb, Co, or a rare earth element. The coating, other than the ceramic phase may comprise Ni, Ni—P, Ni—W—P, Ni—Cu—P, Ni—B, Cu, Ag, Au, Pd.
摘要翻译：在基板上制造硬度高的金属 - 陶瓷复合涂层的方法包括将陶瓷相的溶胶添加到电镀液或电解液中。可以在电镀或涂覆之前和/或期间将溶胶加入，并以溶胶添加速率控制为足够低，使得陶瓷相的纳米颗粒直接形成在基底上和/或在基底上和/或金属 - 陶瓷涂层形成在具有主要结晶结构的基底上和/或基本上避免在电镀溶液或电解质中形成陶瓷相的纳米颗粒和/或陶瓷相颗粒的聚集。陶瓷相可以是Ti，W，Si，Zr，Al，Y，Cr，Fe，Pb，Co或稀土元素的单一或混合氧化物，碳化物，氮化物，硅酸盐，硼化物。陶瓷相以外的涂层可以包括Ni，Ni-P，Ni-W-P，Ni-Cu-P，Ni-B，Cu，Ag，Au，Pd。

15. 发明申请

US20120215434A1 METHODS AND SYSTEMS FOR MANAGING AIR TRAFFIC 审中-公开
标题翻译：管理空中交通的方法和系统
公开(公告)号：US20120215434A1
公开(公告)日：2012-08-23
申请号：US13032151
申请日：2011-02-22
申请人： Rajesh Venkat Subbu , Jon David Petersen , Weiwei Chen
发明人： Rajesh Venkat Subbu , Jon David Petersen , Weiwei Chen
IPC分类号： G08G5/00
CPC分类号： G08G5/0013
摘要： Methods and systems suitable for processing multiple trajectory modification requests received from multiple aircraft within an airspace. The methods include receiving multiple trajectory modification requests that are transmitted from multiple aircraft and request alterations of the altitudes, speeds and/or lateral routes thereof, sequentially performing conflict assessments on the multiple trajectory modification requests to determine if any of the multiple trajectory modification requests pose conflicts with the altitudes, speeds and lateral routes of any other of the multiple aircraft, placing in a computer memory data queue n trajectory modification requests of the multiple trajectory modification requests that are identified by the conflict assessments as posing conflicts, and periodically processing the queue to perform subsequent conflict assessments on the n trajectory modification requests to determine if any of the n trajectory modification requests still pose conflicts with the altitudes, speeds and lateral routes of any other of the multiple aircraft.
摘要翻译：适用于处理从空域内的多架飞机接收的多轨迹修改请求的方法和系统。所述方法包括接收从多个飞行器发送的多个轨迹修改请求，并请求对其高度，速度和/或横向路线的改变，对多个轨迹修改请求顺序执行冲突评估，以确定多个轨迹修改请求中是否存在任何姿势与多个飞机中的任何其他飞机的高度，速度和横向路线冲突，将由冲突评估识别的多个轨迹修改请求的轨迹修改请求放置在计算机存储器数据队列中，构成冲突，并周期性地处理队列对n个轨迹修改请求执行随后的冲突评估，以确定n个轨迹修改请求中的任何一个是否仍然与多个飞行器中的任何另一个的高度，速度和横向路线相冲突。

16. 发明申请

US20120215433A1 METHODS AND SYSTEMS FOR MANAGING AIR TRAFFIC 有权
标题翻译：管理空中交通的方法和系统
公开(公告)号：US20120215433A1
公开(公告)日：2012-08-23
申请号：US13032101
申请日：2011-02-22
申请人： Rajesh Venkat Subbu , Feng Xue , Mauricio Castillo-Effen , Joel Kenneth Klooster , Joachim Karl Ulf Hochwarth , Sergio Torres , Weiwei Chen
发明人： Rajesh Venkat Subbu , Feng Xue , Mauricio Castillo-Effen , Joel Kenneth Klooster , Joachim Karl Ulf Hochwarth , Sergio Torres , Weiwei Chen
IPC分类号： G08G5/00
CPC分类号： G08G5/0043 , G06Q10/047 , G06Q10/06 , G06Q50/30
摘要： Methods and systems suitable for negotiating air traffic trajectory modification requests received from multiple aircraft that each has trajectory parameters. The methods include transmitting from at least a first aircraft a first trajectory modification request to alter the altitude, speed and/or lateral route thereof. A first conflict assessment is then performed to determine if the first trajectory modification request poses a conflict with the altitudes, speeds and lateral routes of other aircraft. If a conflict is not identified, the first trajectory modification request is granted and the first aircraft is notified of the first trajectory modification request being granted. Alternatively, if a conflict is identified, the first trajectory modification request is not granted and the first aircraft is notified thereof. If the first trajectory modification request was not granted, the first trajectory modification request is placed in a queue, which is periodically processed to perform subsequent conflict assessments.
摘要翻译：适用于协商从多台飞机接收的空中交通轨迹修改请求的方法和系统，每个航空器具有轨迹参数。所述方法包括从至少第一飞行器发送第一轨迹修改请求以改变其高度，速度和/或横向路线。然后执行第一冲突评估以确定第一轨迹修改请求是否与其他飞行器的高度，速度和侧向路线形成冲突。如果没有识别到冲突，则授予第一轨迹修改请求，并且向第一飞机通知被授予的第一轨迹修改请求。或者，如果确定了冲突，则未授予第一轨迹修改请求，并且通知第一飞行器。如果未授予第一轨迹修改请求，则将第一轨迹修改请求放置在队列中，该队列被周期性地处理以执行随后的冲突评估。

17. 发明授权

US07863142B2 Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device 有权
公开(公告)号：US07863142B2
公开(公告)日：2011-01-04
申请号：US12078750
申请日：2008-04-04
申请人： Chang-wook Moon , Hyun-deok Yang , Joong S. Jeon , Hwa-sung Rhee , Nae-in Lee , Weiwei Chen
发明人： Chang-wook Moon , Hyun-deok Yang , Joong S. Jeon , Hwa-sung Rhee , Nae-in Lee , Weiwei Chen
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/28518 , H01L29/165 , H01L29/66636 , H01L29/78
摘要： Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.

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