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11. 发明申请

US20100216046A1 FUEL CELL FORMED IN A SINGLE LAYER OF MONOCRYSTALLINE SILICON AND FABRICATION PROCESS 有权
标题翻译：在单层硅和制造工艺单层中形成的燃料电池
公开(公告)号：US20100216046A1
公开(公告)日：2010-08-26
申请号：US12773190
申请日：2010-05-04
申请人： Giuseppe D'Arrigo , Salvatore Coffa
发明人： Giuseppe D'Arrigo , Salvatore Coffa
IPC分类号： H01M8/24
CPC分类号： H01M8/1004 , H01M8/1097 , H01M2008/1095
摘要： Fuel cells are formed in a single layer of conductive monocrystalline silicon including a succession of electrically isolated conductive silicon bodies separated by narrow parallel trenches etched through the whole thickness of the silicon layer. Semicells in a back-to-back configuration are formed over etch surfaces of the separation trenches. Each semicell formed on the etch surface of one of the silicon bodies forming an elementary cell in cooperation with an opposite semicell formed on the etch surface of the next silicon body of the succession, is separated by an ion exchange membrane resin filling the separation trench between the opposite semicells forming a solid electrolyte of the elementary cell. Each semicell includes a porous conductive silicon region permeable to fluids, extending for a certain depth from the etch surface of the silicon body, at least partially coated by a non passivable metallic material. Each of the porous and fluid permeable regions communicates with a feed duct of a fuel fluid or of oxygen gas that extends parallel to the etch surface inside the conductive silicon body.
摘要翻译：燃料电池形成在单层导电单晶硅中，包括一系列电绝缘的导电硅体，这些导电硅体由通过硅层的整个厚度蚀刻的窄平行沟槽分开。背对背配置的半规格形成在分离沟槽的蚀刻表面上。与形成在下一次硅体的蚀刻表面上形成的相反的半导体协作的形成元件单元的硅体之一上形成的每个半单元被填充分离槽之间的离子交换膜树脂隔开，相反的半细胞形成基本细胞的固体电解质。每个半腔包括可渗透流体的多孔导电硅区域，其延伸至硅体的蚀刻表面一定深度，至少部分地由不可通行的金属材料涂覆。多孔和流体渗透区域中的每一个与在导电硅体内部平行于蚀刻表面延伸的燃料流体或氧气的进料管道连通。

12. 发明申请

US20080085433A1 PROCESS AND CORRESPONDING APPARATUS FOR CONTINUOUSLY PRODUCING GASEOUS HYDROGEN TO BE SUPPLIED TO MICRO FUEL CELLS AND INTEGRATED SYSTEM FOR PRODUCING ELECTRIC ENERGY 有权
标题翻译：用于连续生产供应给微型燃料电池的气化氢的方法和相应装置以及用于生产电能的集成系统
公开(公告)号：US20080085433A1
公开(公告)日：2008-04-10
申请号：US11867893
申请日：2007-10-05
申请人： Roberta Giuffrida , Marco Salanitri , Giuseppe Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
发明人： Roberta Giuffrida , Marco Salanitri , Giuseppe Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
IPC分类号： H01M8/04 , B01J19/00 , H01M8/18
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00835 , B01J2219/00891 , B01J2219/00907 , C01B3/065 , C01B2203/066 , H01M8/065 , H01M8/1097 , H01M2008/1095 , Y02E60/362
摘要： A process for the production of hydrogen for micro fuel cells, comprises the successive steps of: continuously supplying a catalytic bed with an aqueous solution of sodium borohydride, the catalytic bed being made of at least one metal chosen among cobalt, nickel, platinum, ruthenium with obtainment of hydrogen and of a by-product comprising sodium metaborate, continuously recovering the hydrogen thus obtained and supplying, with said hydrogen as it is as obtained, a micro fuel cell which transforms hydrogen into electric energy. An apparatus provides continuous supply of hydrogen to a micro fuel cell. An integrated system structured for continuously producing and supplying hydrogen to a micro fuel cell and for converting the continuously supplied hydrogen into electric energy.
摘要翻译：用于生产用于微型燃料电池的氢气的方法包括以下连续步骤：连续向催化床提供硼氢化钠水溶液，催化床由选自钴，镍，铂，钌中的至少一种金属制成通过获得氢气和包含偏硼酸钠的副产物，连续回收由此获得的氢气，并将氢气原样供应到将氢气转化为电能的微型燃料电池中。一种装置向微型燃料电池提供氢的连续供应。一种集成系统，其被构造用于连续生产和向微型燃料电池供应氢气，并将连续供应的氢气转化为电能。

13. 发明授权

US06828598B1 Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device 有权
标题翻译：用于电光应用的半导体器件，用于制造所述器件的方法和相应的半导体激光器件
公开(公告)号：US06828598B1
公开(公告)日：2004-12-07
申请号：US09653390
申请日：2000-09-01
申请人： Salvatore Coffa , Sebania Libertino , Mario Saggio , Ferruccio Frisina
发明人： Salvatore Coffa , Sebania Libertino , Mario Saggio , Ferruccio Frisina
IPC分类号： H01L3300
CPC分类号： H01S5/305 , H01S3/1603 , H01S3/1628 , H01S5/3004 , H01S5/3068
摘要： A semiconductor device for electro-optic applications includes a rare-earth ions doped P/N junction integrated on a semiconductor substrate. The semiconductor device may be used to obtain laser action in silicon. The rare-earth ions are in a depletion layer of the doped P/N junction, and are for providing a coherent light source cooperating with a waveguide defined by the doped P/N junction. The doped P/N junction may be the base-collector region of a bipolar transistor, and is reverse biased so that the rare-earth ions provide the coherent light.
摘要翻译：用于电光应用的半导体器件包括集成在半导体衬底上的稀土离子掺杂P / N结。半导体器件可用于在硅中获得激光作用。稀土离子在掺杂的P / N结的耗尽层中，并且用于提供与由掺杂的P / N结限定的波导配合的相干光源。掺杂的P / N结可以是双极晶体管的基极 - 集电极区域，并且被反向偏置，使得稀土离子提供相干光。

14. 发明授权

US06433399B1 Infrared detector device of semiconductor material and manufacturing process thereof 有权
标题翻译：半导体材料红外探测器及其制造工艺
公开(公告)号：US06433399B1
公开(公告)日：2002-08-13
申请号：US09415022
申请日：1999-10-07
申请人： Albert Polman , Nicholas Hamelin , Peter Kik , Salvatore Coffa , Ferruccio Frisina , Mario Saggio
发明人： Albert Polman , Nicholas Hamelin , Peter Kik , Salvatore Coffa , Ferruccio Frisina , Mario Saggio
IPC分类号： H01L310232
CPC分类号： G02B6/12004 , H01L31/0352 , H01L31/103
摘要： An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.
摘要翻译：具有由掺杂有稀土离子的第一半导体材料区域和具有相反掺杂型的第二半导体材料区域形成的PN结的红外检测器装置。检测器装置包括由在衬底上延伸的突出结构形成的波导，包括反射层，并由保护和容纳氧化物区域横向界定。波导的至少一部分由PN结形成，并且具有馈送待检测光的端部。检测器装置具有横向设置在波导上的电极，以使得能够有效地收集通过光转换产生的电荷载流子。

15. 发明授权

US08575720B2 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 有权
标题翻译：用于在惰性基板上集成至少包括无源元件和有源元件的器件以及相应的集成器件的工艺
公开(公告)号：US08575720B2
公开(公告)日：2013-11-05
申请号：US11803716
申请日：2007-05-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
IPC分类号： H01L27/08
CPC分类号： H01L21/84 , H01L27/12
摘要： A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.
摘要翻译：描述了一种在惰性基板上集成具有至少一个无源部件和一个有源部件的装置的方法。该方法包括：将保护电介质层沉积在惰性衬底上; 在保护电介质层上形成多晶硅岛; 有源元件在多晶硅岛上的集成; 覆盖电介质层沉积在保护电介质层和有源元件上; 将被动元件集成在覆盖介电层上; 在与所述有源部件的有源区域对应的覆盖介电层中实现的开口中形成第一接触结构; 以及与被动部件对应地形成第二接触结构。还描述了通过该方法获得的集成装置。

16. 发明授权

US07763372B2 Fuel cell formed in a single layer of monocrystalline silicon and fabrication process 有权
标题翻译：燃料电池形成在单层单晶硅和制造工艺中
公开(公告)号：US07763372B2
公开(公告)日：2010-07-27
申请号：US11383088
申请日：2006-05-12
申请人： Giuseppe D'Arrigo , Salvatore Coffa
发明人： Giuseppe D'Arrigo , Salvatore Coffa
IPC分类号： H01M4/00 , H01L23/48
CPC分类号： H01M8/1004 , H01M8/1097 , H01M2008/1095
摘要： Fuel cells are formed in a single layer of conductive monocrystalline silicon including a succession of electrically isolated conductive silicon bodies separated by narrow parallel trenches etched through the whole thickness of the silicon layer. Semicells in a back-to-back configuration are formed over etch surfaces of the separation trenches. Each semicell formed on the etch surface of one of the silicon bodies forming an elementary cell in cooperation with an opposite semicell formed on the etch surface of the next silicon body of the succession, is separated by an ion exchange membrane resin filling the separation trench between the opposite semicells forming a solid electrolyte of the elementary cell. Each semicell includes a porous conductive silicon region permeable to fluids, extending for a certain depth from the etch surface of the silicon body, at least partially coated by a non passivable metallic material. Each of the porous and fluid permeable regions communicates with a feed duct of a fuel fluid or of oxygen gas that extends parallel to the etch surface inside the conductive silicon body.
摘要翻译：燃料电池形成在单层导电单晶硅中，包括一系列电绝缘的导电硅体，这些导电硅体由通过硅层的整个厚度蚀刻的窄平行沟槽分开。背对背配置的半规格形成在分离沟槽的蚀刻表面上。与形成在下一次硅体的蚀刻表面上形成的相反的半导体协作的形成元件单元的硅体之一上形成的每个半单元被填充分离槽之间的离子交换膜树脂隔开，相反的半细胞形成基本细胞的固体电解质。每个半腔包括可渗透流体的多孔导电硅区域，其延伸至硅体的蚀刻表面一定深度，至少部分地由不可通行的金属材料涂覆。多孔和流体渗透区域中的每一个与在导电硅体内部平行于蚀刻表面延伸的燃料流体或氧气的进料管道连通。

17. 发明申请

US20080173879A1 GALVANIC OPTOCOUPLER AND METHOD OF MAKING 有权
标题翻译： GALVANIC OPTOCOUPLER及其制作方法
公开(公告)号：US20080173879A1
公开(公告)日：2008-07-24
申请号：US12019186
申请日：2008-01-24
申请人： Mariantonietta Monaco , Massimiliano Fiorito , Gianpiero Montalbano , Salvatore Coffa
发明人： Mariantonietta Monaco , Massimiliano Fiorito , Gianpiero Montalbano , Salvatore Coffa
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L31/173 , H01L25/167 , H01L31/028 , H01L31/0284 , H01L31/1105 , H01L31/1804 , H01L2924/0002 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.
摘要翻译：一种单晶集成在硅衬底上并具有至少一个光源的光电耦合器和通过电绝缘层接合的光电检测器。光电检测器可以是在硅衬底中实现的光电晶体管，并且电流绝缘层（40）是该光电晶体管的钝化层。在电绝缘层上方的光源包括分别具有阴极和阳极功能的第一和第二多晶硅层的集成LED，这些第一和第二层包围至少一个光发射层，特别是富含硅（SRO）。因此提供了如此制造的电光耦合器的集成过程，特别是在BCD3s技术中。

18. 发明授权

US06743654B2 Method of fabricating pressure sensor monolithically integrated 有权
标题翻译：制造压力传感器单片集成方法
公开(公告)号：US06743654B2
公开(公告)日：2004-06-01
申请号：US10014880
申请日：2001-12-11
申请人： Salvatore Coffa , Luigi Occhipinti
发明人： Salvatore Coffa , Luigi Occhipinti
IPC分类号： H01L2100
CPC分类号： B81C1/00182 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C2201/0109 , B81C2201/0115 , G01L9/0042
摘要： A method of making a monolithically integrated pressure sensor includes making a cavity in the semiconductor substrate. This may be formed by plasma etching the front side or the back side of the silicon wafer to cut a plurality of trenches or holes deep enough to extend for at least part of its thickness into a doped buried layer of opposite type of conductivity of the substrate and of the epitaxial layer grown over it. The method may also include electrochemically etching through such trenches, and the silicon of the buried layer with an electrolytic solution suitable for selectively etching the doped silicon of the opposite type of conductivity, thereby making the silicon of the buried layer porous. The method may also include oxidizing and leaching away the silicon so made porous.
摘要翻译：制造单片集成压力传感器的方法包括在半导体衬底中形成空腔。这可以通过等离子体蚀刻硅晶片的前侧或背面来形成，以切割多个深度足以将其厚度的至少一部分延伸到衬底的相反导电性的掺杂掩埋层中的沟槽或孔以及在其上生长的外延层。该方法还可以包括通过这样的沟槽进行电化学蚀刻，以及使用适合于选择性地蚀刻具有相反导电性的掺杂硅的电解液的掩埋层的硅，从而使掩埋层的硅多孔化。该方法还可以包括氧化和浸出如此制成的多孔的硅。

19. 发明授权

US06506658B2 Method for manufacturing a SOI wafer 有权
标题翻译： SOI晶片的制造方法
公开(公告)号：US06506658B2
公开(公告)日：2003-01-14
申请号：US09752149
申请日：2000-12-29
申请人： Giuseppe D'Arrigo , Corrado Spinella , Salvatore Coffa , Giuseppe Arena , Marco Camalleri
发明人： Giuseppe D'Arrigo , Corrado Spinella , Salvatore Coffa , Giuseppe Arena , Marco Camalleri
IPC分类号： H01L21331
CPC分类号： H01L21/3063 , C25F3/12 , H01L21/31662 , H01L21/32105 , H01L21/7624 , H01L21/76264 , H01L21/76286
摘要： A method for fabricating a silicon-on-insulator (SOI) wafer that includes a monocrystalline silicon substrate with a doped region buried therein is provided. The method includes forming a plurality of trench-like openings extending from a surface of the substrate to the doped buried region, and selectively etching through the plurality of trench-like openings to change the doped buried region into a porous silicon region. The porous silicon region is oxidized to obtain an insulating region for the SOI wafer.
摘要翻译：提供一种制造绝缘体上硅（SOI）晶片的方法，该方法包括其中埋有掺杂区的单晶硅衬底。该方法包括形成从衬底的表面延伸到掺杂掩埋区的多个沟槽状开口，并且选择性地蚀刻穿过多个沟槽状开口以将掺杂掩埋区改变为多孔硅区。多孔硅区域被氧化以获得用于SOI晶片的绝缘区域。

20. 发明授权

US5939769A Bipolar power transistor with high collector breakdown voltage and related manufacturing process 失效
标题翻译：具有高集电极击穿电压和相关制造工艺的双极功率晶体管
公开(公告)号：US5939769A
公开(公告)日：1999-08-17
申请号：US904257
申请日：1997-07-31
申请人： Ferruccio Frisina , Salvatore Coffa
发明人： Ferruccio Frisina , Salvatore Coffa
IPC分类号： H01L21/331 , H01L29/06 , H01L29/167 , H01L29/73 , H01L29/732 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/66295 , H01L29/0615 , H01L29/167 , H01L29/73 , Y10S148/01 , Y10S438/965
摘要： There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The transistor has a base region comprising a heavily doped P type diffusion, which extends into the lightly doped N type layer from a top surface. The transistor further includes an emitter region constituted by a heavily doped N type diffusion extending from the top surface within said heavily doped P type diffusion. The heavily doped P type diffusion is obtained within a deep lightly doped P type diffusion, extending from said top surface into the lightly doped N type layer and formed with acceptor impurities of aluminum atoms.
摘要翻译：描述了在N型的重掺杂半导体衬底中获得的具有高击穿电压的双极功率晶体管，其上叠加构成晶体管的集电极区的轻掺杂N型层。晶体管具有包括重掺杂P型扩散的基极区，其从顶表面延伸到轻掺杂的N型层中。晶体管还包括由在所述重掺杂P型扩散内的顶表面延伸的重掺杂N型扩散构成的发射极区域。在深掺杂的P型扩散中获得重掺杂的P型扩散，该扩散从所述顶表面延伸到轻掺杂的N型层中，并由铝原子的受主杂质形成。

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