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11. 发明申请

US20050223991A1 Faraday dose and uniformity monitor for plasma based ion implantation 有权
标题翻译：法拉第剂量和均匀度监测器用于等离子体离子注入
公开(公告)号：US20050223991A1
公开(公告)日：2005-10-13
申请号：US10817755
申请日：2004-04-02
申请人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244 , H01J37/32 , C23C14/48
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。狭窄的孔径可以减少法拉第杯开口内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

12. 发明授权

US08692468B2 Transformer-coupled RF source for plasma processing tool 有权
标题翻译：用于等离子体处理工具的变压器耦合射频源
公开(公告)号：US08692468B2
公开(公告)日：2014-04-08
申请号：US13251819
申请日：2011-10-03
申请人： Kamal Hadidi , Rajesh Dorai
发明人： Kamal Hadidi , Rajesh Dorai
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
摘要： A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
摘要翻译：公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。在另一个实施例中，铁氧体的腿延伸到处理室中，从而进一步将磁场延伸到腔室中。该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。

13. 发明申请

US20130082599A1 TRANSFORMER-COUPLED RF SOURCE FOR PLASMA PROCESSING TOOL 有权
标题翻译：用于等离子体加工工具的变压器耦合射频源
公开(公告)号：US20130082599A1
公开(公告)日：2013-04-04
申请号：US13251819
申请日：2011-10-03
申请人： Kamal Hadidi , Rajesh Dorai
发明人： Kamal Hadidi , Rajesh Dorai
IPC分类号： H05H1/46 , H01L21/3065 , H01J27/02
CPC分类号： H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
摘要： A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
摘要翻译：公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。在另一个实施例中，铁氧体的腿延伸到处理室中，从而进一步将磁场延伸到腔室中。该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。

14. 发明授权

US07667208B2 Technique for confining secondary electrons in plasma-based ion implantation 失效
标题翻译：在等离子体离子注入中限制二次电子的技术
公开(公告)号：US07667208B2
公开(公告)日：2010-02-23
申请号：US11550140
申请日：2006-10-17
申请人： Rajesh Dorai
发明人： Rajesh Dorai
IPC分类号： H01J37/244 , H01J37/252
CPC分类号： H01J37/3266 , H01J37/32412 , H01J2237/0045
摘要： A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.
摘要翻译：公开了一种限制二次电子在晶片上的技术。在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。

15. 发明授权

US07655922B2 Techniques for confining electrons in an ion implanter 有权
标题翻译：用于将电子限制在离子注入机中的技术
公开(公告)号：US07655922B2
公开(公告)日：2010-02-02
申请号：US11568000
申请日：2006-12-07
申请人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
发明人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
摘要翻译：公开了将电子限制在离子注入机中的技术。在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上路径，第一面反对第二面。第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

16. 发明申请

US20080135775A1 TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER 有权
标题翻译：在离子植入物中配置电子的技术
公开(公告)号：US20080135775A1
公开(公告)日：2008-06-12
申请号：US11568000
申请日：2006-12-07
申请人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
发明人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC分类号： H01J1/50
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
摘要翻译：公开了将电子限制在离子注入机中的技术。在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上路径，第一面反对第二面。第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

17. 发明授权

US08003498B2 Particle beam assisted modification of thin film materials 有权
标题翻译：粒子束辅助修饰薄膜材料
公开(公告)号：US08003498B2
公开(公告)日：2011-08-23
申请号：US12269344
申请日：2008-11-12
申请人： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
摘要翻译：公开了用于处理基板的方法的几个实例。在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体，邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

18. 发明授权

US07812321B2 Techniques for providing a multimode ion source 有权
标题翻译：提供多模离子源的技术
公开(公告)号：US07812321B2
公开(公告)日：2010-10-12
申请号：US12137225
申请日：2008-06-11
申请人： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
发明人： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
IPC分类号： H01J27/00 , H01J27/24 , H01T23/00
CPC分类号： H01J37/08 , H01J27/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/0817 , H01J2237/082 , H01J2237/0827 , H01J2237/304
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
摘要翻译：公开了提供多模离子源的技术。在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

19. 发明申请

US20090124065A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
标题翻译：细粒束辅助修饰薄膜材料
公开(公告)号：US20090124065A1
公开(公告)日：2009-05-14
申请号：US12269327
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
摘要翻译：公开了用于处理衬底的方法的几个实例。在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

20. 发明申请

US20090124064A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
公开(公告)号：US20090124064A1
公开(公告)日：2009-05-14
申请号：US12269276
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

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