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1. 发明授权

US07655922B2 Techniques for confining electrons in an ion implanter 有权
标题翻译：用于将电子限制在离子注入机中的技术
公开(公告)号：US07655922B2
公开(公告)日：2010-02-02
申请号：US11568000
申请日：2006-12-07
申请人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
发明人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
摘要翻译：公开了将电子限制在离子注入机中的技术。在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上路径，第一面反对第二面。第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

2. 发明申请

US20080135775A1 TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER 有权
标题翻译：在离子植入物中配置电子的技术
公开(公告)号：US20080135775A1
公开(公告)日：2008-06-12
申请号：US11568000
申请日：2006-12-07
申请人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
发明人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC分类号： H01J1/50
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
摘要翻译：公开了将电子限制在离子注入机中的技术。在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上路径，第一面反对第二面。第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。

3. 发明授权

US07166854B2 Uniformity control multiple tilt axes, rotating wafer and variable scan velocity 有权
标题翻译：均匀性控制多个倾斜轴，旋转晶片和可变扫描速度
公开(公告)号：US07166854B2
公开(公告)日：2007-01-23
申请号：US11021420
申请日：2004-12-23
申请人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
发明人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
IPC分类号： H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向（扫描方向）来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。还包括用于进行均匀剂量离子注入的方法，系统和程序产品，其中靶相对于离子束旋转并且倾斜大于大于一个轴。

4. 发明授权

US07161161B2 Uniformity control using multiple fixed wafer orientations and variable scan velocity 有权
标题翻译：使用多个固定晶片取向和可变扫描速度的均匀性控制
公开(公告)号：US07161161B2
公开(公告)日：2007-01-09
申请号：US11008764
申请日：2004-12-08
申请人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
发明人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
IPC分类号： G21K5/10
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未调谐的离子束通过以可变或不均匀的扫描速度以目标的多个旋转固定取向（扫描方向）扫描光束来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。该技术可以独立地使用或与其他均匀性方法结合使用以实现所需的均匀性水平。

5. 发明申请

US20080078953A1 TECHNIQUE FOR IMPROVING ION IMPLANTATION THROUGHPUT AND DOSE UNIFORMITY 有权
标题翻译：用于改善离子植入和剂量均匀性的技术
公开(公告)号：US20080078953A1
公开(公告)日：2008-04-03
申请号：US11537050
申请日：2006-09-29
申请人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
发明人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

6. 发明授权

US06791094B1 Method and apparatus for determining beam parallelism and direction 有权
标题翻译：用于确定光束平行度和方向的方法和装置
公开(公告)号：US06791094B1
公开(公告)日：2004-09-14
申请号：US09588419
申请日：2000-06-06
申请人： Joseph C. Olson , Donna L. Smatlak , Paul Daniel
发明人： Joseph C. Olson , Donna L. Smatlak , Paul Daniel
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24542 , H01J2237/30433
摘要： A method and apparatus for determining a direction or parallelism of a beam. The beam can be any type of beam, including uncharged or charged particle beams or electromagnetic radiation beams. The beam can have any desired size or shape and can be scanned or fixed in place. A direction or parallelism of the beam can be determined by adjusting an intensity profile of at least a portion of the beam at a first position. The adjusted intensity profile can be formed, for example, by blocking a portion of the beam at the first position. The adjusted intensity profile can be formed by a special purpose device, such as a mask, adjustable aperture, etc., or by another device having a separate purpose. For example, a beam modifier used to form the adjusted intensity profile can be a detector used to determine a measure of uniformity of the beam. One or more detected intensity profiles downstream of the first position can be identified and the relative positions of where the adjusted intensity profile is formed and where the intensity profile(s) are detected relative to a reference direction can be used to determine a direction or parallelism of the beam.
摘要翻译：一种用于确定光束的方向或平行度的方法和装置。光束可以是任何类型的光束，包括不带电或带电的粒子束或电磁辐射束。梁可以具有任何期望的尺寸或形状，并且可以扫描或固定到位。光束的方向或平行度可以通过在第一位置调整光束的至少一部分的强度分布来确定。经调整的强度分布可以例如通过在第一位置处阻挡梁的一部分而形成。经调整的强度分布可以由专用装置形成，例如掩模，可调整孔径等，或者由具有单独目的的另一装置形成。例如，用于形成调整的强度分布的光束修改器可以是用于确定光束的均匀度的测量的检测器。可以识别在第一位置下游的一个或多个检测到的强度分布，并且可以使用相对于参考方向来检测调整的强度分布和强度分布的相对位置，以确定方向或平行度的梁。

7. 发明授权

US5061838A Toroidal electron cyclotron resonance reactor 失效
标题翻译： TOROIDAL ELECTRON CYCLOTRON共振反应器
公开(公告)号：US5061838A
公开(公告)日：1991-10-29
申请号：US370594
申请日：1989-06-23
申请人： Barton G. Lane , Herbert H. Sawin , Donna L. Smatlak
发明人： Barton G. Lane , Herbert H. Sawin , Donna L. Smatlak
IPC分类号： H01J37/32
CPC分类号： H01J37/32357
摘要： A toroidal ECR reactor is described in which a poloidal magnetic field is established in a plasma generating chamber in which a specimen to be processed is disposed on an electrode in a specimen chamber. Microwaves and gaseous reactants are introduced into the plasma generating chamber. A plasma discharge occurs in which high energy electrons are confined in a plasma source region extending between a magnetic mirror formed in the specimen chamber out of line-of-sight to the wafer(s) when disposed on the electrode. A baffle region formed between the two chambers prevents microwaves from entering the specimen chamber. The reactor is particularly suitable for etching or depositing films on semiconductor substrates, since the sensitive substrates are not exposed to the high energy ions and/or photons of the source region.
摘要翻译：描述了一种环形ECR反应器，其中在等离子体产生室中建立极向磁场，其中待处理样品设置在样品室中的电极上。将微波和气态反应物引入等离子体产生室。发生等离子体放电，其中当设置在电极上时，高能电子被限制在等离子体源区域中，等离子体源区域在形成于样本室之间的磁反射镜之外延伸到视线以外的晶片。形成在两个室之间的挡板区域防止微波进入样品室。反应器特别适合于在半导体衬底上蚀刻或沉积膜，因为敏感衬底不暴露于源区的高能离子和/或光子。

8. 发明授权

US07459704B2 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US07459704B2
公开(公告)日：2008-12-02
申请号：US11269033
申请日：2005-11-08
申请人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
发明人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

9. 发明授权

US5479254A Continuous, real time microwave plasma element sensor 失效
标题翻译：连续，实时微波等离子体元件传感器
公开(公告)号：US5479254A
公开(公告)日：1995-12-26
申请号：US141857
申请日：1993-10-22
申请人： Paul P. Woskov , Donna L. Smatlak , Daniel R. Cohn , J. Kenneth Wittle , Charles H. Titus , Jeffrey E. Surma
发明人： Paul P. Woskov , Donna L. Smatlak , Daniel R. Cohn , J. Kenneth Wittle , Charles H. Titus , Jeffrey E. Surma
IPC分类号： G01N21/68 , G01N21/73 , G01J3/30 , G01N21/69 , H01P1/00
CPC分类号： G01N21/73
摘要： Microwave-induced plasma for continuous, real time trace element monitoring under harsh and variable conditions. The sensor includes a source of high power microwave energy and a shorted waveguide made of a microwave conductive, refractory material communicating with the source of the microwave energy to generate a plasma. The high power waveguide is constructed to be robust in a hot, hostile environment. It includes an aperture for the passage of gases to be analyzed and a spectrometer is connected to receive light from the plasma. Provision is made for real time in situ calibration. The spectrometer disperses the light, which is then analyzed by a computer. The sensor is capable of making continuous, real time quantitative measurements of desired elements, such as the heavy metals lead and mercury.
摘要翻译：微波诱导等离子体在恶劣条件下进行连续，实时的微量元素监测。传感器包括高功率微波能量源和由与微波能量源连通以产生等离子体的微波导电耐火材料制成的短路波导。高功率波导被构造为在热的，恶劣的环境中是坚固的。它包括用于待分析气体通过的孔，并且连接光谱仪以接收来自等离子体的光。经费用于实时在线校准。光谱仪分散光，然后由计算机分析。传感器能够对所需元素进行连续的实时定量测量，如重金属铅和汞。

10. 发明授权

US07402816B2 Electron injection in ion implanter magnets 有权
标题翻译：离子注入机磁体中的电子注入
公开(公告)号：US07402816B2
公开(公告)日：2008-07-22
申请号：US11281175
申请日：2005-11-17
申请人： Anthony Renau , Donna L. Smatlak , James Buff , Eric Hermanson
发明人： Anthony Renau , Donna L. Smatlak , James Buff , Eric Hermanson
IPC分类号： H01J1/50
CPC分类号： H01J27/02 , H01J37/026 , H01J37/05 , H01J37/3171 , H01J2237/0041 , H01J2237/055 , H01J2237/057 , H05H7/08
摘要： One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.
摘要翻译：一个或多个电子源用于将电子注入到在磁体的极柱之间传输的离子束中。在一些实施例中，电子源位于磁体的一个或两个磁极中的空腔中。在其他实施例中，无线电频率或微波等离子体喷枪位于至少一个极杆中或杆之间的空腔中。

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