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11. 发明申请

US20130337571A1 BIOLOGICAL SAMPLE MEASURING DEVICE AND METHOD FOR MEASURING BIOLOGICAL SAMPLE USING SAME 有权
标题翻译：生物样品测量装置和使用其测量生物样品的方法
公开(公告)号：US20130337571A1
公开(公告)日：2013-12-19
申请号：US14003090
申请日：2012-05-10
申请人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
发明人： Daiki Mizuoka , Hiroyuki Tokunaga , Tsuyoshi Takahashi
IPC分类号： G01N33/66
CPC分类号： G01N33/66 , G01N27/3273 , G01N27/3274 , Y10T436/144444
摘要： With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values.
摘要翻译：在该生物样本测定装置中，决定部在从开始测量直到第一次的第一测量期间内以特定间隔进行测量，并且在第一测定周期之后的第二测定期间内，以规定间隔进行测定，基于在第一测量周期中测量的多个电流值和在第二测量周期中测量的多个电流值，在相应的特定周期中的测量值之间的差异，并且找到多个第一差分确定值，找到第二差分确定值，通过在多个第一差分确定值中以特定间隔找到差异，并且基于第一差异确定值确定生物样本测量传感器的试剂移动误差和/或曝光误差是否已经发生和第二差分确定值。

12. 发明授权

US08507122B2 Power supply device including a plurality of battery cells arranged side by side 有权
标题翻译：电源装置，其包括并排布置的多个电池单元
公开(公告)号：US08507122B2
公开(公告)日：2013-08-13
申请号：US12914251
申请日：2010-10-28
申请人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
发明人： Masao Saito , Tomokazu Takashina , Tsuyoshi Takahashi
IPC分类号： H01M10/50
CPC分类号： H01M10/0413 , H01M2/1072 , H01M6/42 , H01M10/613 , H01M10/625 , H01M10/647 , H01M10/6557 , H01M10/6563 , H01M10/6566
摘要： A power supply device includes rectangular battery cells 1, resin separators 2, end spacers 17, thick metal end plates 10, and coupling members 11. The separator 2 is inserted between the cells 1 to insulate adjacent cells 1 from each other, and in thermal contact with the cells 1. The end spacers 17 cover end battery cells 1 on the opposed end surfaces of a battery block composed of the cells 1 and the separators 2 alternately arranged. The end plates 10 cover the surfaces of the end spacers 17. The coupling members 11 couple the end plates 10 to each other. The separators 2 form gaps 4 for flowing air along the surfaces of the cells 1 in contact with the separators 2. The end spacers 17 have hollow layers 18 on their surfaces in contact with the cells 1, and define closed chambers.
摘要翻译：电源装置包括矩形电池单元1，树脂隔板2，端部间隔件17，厚金属端板10和联接构件11.隔板2插入电池单元1之间，以使相邻电池单元1相互隔离，与电池单元1接触。端部间隔件17覆盖由电池单元1和分隔件2交替布置的电池块的相对端面上的端部电池单元1。端板10覆盖端部间隔件17的表面。联接构件11将端板10彼此连接。分离器2形成用于沿着与隔板2接触的电池单元1的表面流动空气的间隙4.端部间隔件17在其与电池单元1接触的表面上具有中空层18，并且限定闭合室。

13. 发明授权

US08183558B2 Compound semiconductor device with T-shaped gate electrode 有权
标题翻译：具有T形栅电极的复合半导体器件
公开(公告)号：US08183558B2
公开(公告)日：2012-05-22
申请号：US13023146
申请日：2011-02-08
申请人： Kozo Makiyama , Tsuyoshi Takahashi
发明人： Kozo Makiyama , Tsuyoshi Takahashi
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/66431
摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.
摘要翻译：化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅电极开口形成在凹部上的栅电极。

14. 发明授权

US08174871B2 Memory cell array 有权
标题翻译：存储单元阵列
公开(公告)号：US08174871B2
公开(公告)日：2012-05-08
申请号：US12644608
申请日：2009-12-22
申请人： Tsuyoshi Takahashi , Yutaka Hayashi , Yuichiro Masuda , Shigeo Furuta , Masatoshi Ono
发明人： Tsuyoshi Takahashi , Yutaka Hayashi , Yuichiro Masuda , Shigeo Furuta , Masatoshi Ono
IPC分类号： G11C11/00
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.
摘要翻译：公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定字线进行读取，并指定第一位线以向第二位线提供低于写入电压的读取电压，并且当字线的电压变为栅极阈值电压以上并且驱动电压和栅极阈值电压之和时，指定字线或更少。

15. 发明授权

US07697225B2 Storage apparatus, method of controlling amount of write current overshoot in storage apparatus and storage medium storing its program 失效
标题翻译：存储装置，控制存储装置中的写入电流过冲量和存储其程序的存储介质的方法
公开(公告)号：US07697225B2
公开(公告)日：2010-04-13
申请号：US11901347
申请日：2007-09-17
申请人： Tsuyoshi Takahashi
发明人： Tsuyoshi Takahashi
IPC分类号： G11B5/09
CPC分类号： G11B5/02 , G11B5/09 , G11B20/10009 , G11B20/10481 , G11B20/18 , G11B2005/001 , G11B2220/2516
摘要： A storage apparatus comprises: a current parameter varying section that can make a write current used for writing information on the storage medium and an overshoot amount corresponding to the write current variable; a detection section that detects an error rate or its corresponding error rate parameter for a plurality of combinations of the write current and overshoot amount varied by the current parameter varying section; a saturation factor calculation section that calculates a saturation factor representing a change in the error rate relative to a unit write current value from the error rate or error rate parameter detected by the detection section; and a current parameter setting section that determines current parameters based on the saturation factor obtained by the saturation factor calculation section for setting.
摘要翻译：存储装置包括：当前参数变化部分，其可以使用于在存储介质上写入信息的写入电流和与写入电流变量相对应的过冲量; 检测部，其检测由所述当前参数变化部变化的写入电流和过冲量的多个组合的误差率或其对应的误差率参数; 饱和因子计算部，从检测部检测出的误差率或误差率参数，计算表示相对于单位写入电流值的误差率变化的饱和因数; 以及电流参数设定部，其基于由所述饱和因子计算部获得的所述饱和因子确定当前参数以进行设定。

16. 发明授权

US07679946B2 Memory element array having switching elements including a gap of nanometer order 有权
标题翻译：具有包括纳米级间隙的开关元件的存储元件阵列
公开(公告)号：US07679946B2
公开(公告)日：2010-03-16
申请号：US12141492
申请日：2008-06-18
申请人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono
发明人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono
IPC分类号： G11C13/00 , G11C11/00
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/003 , G11C2213/76 , H01L27/2418 , H01L45/04 , H01L45/124
摘要： Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.
摘要翻译：公开了包括以阵列布置的多个存储元件的存储元件阵列，其中存储元件是各自包括纳米级的间隙的开关元件，其中通过在电极之间施加预定电压而引起电阻的切换现象，并且存储元件阵列设置有分别与开关元件串联连接的隧道元件，每个隧道元件防止在施加预定电压时产生流向另一开关元件的潜行电流电流。

17. 发明授权

US07643237B2 Data loss prevention method of a media storage device and media storage device 有权
标题翻译：媒体存储设备和媒体存储设备的数据丢失防范方法
公开(公告)号：US07643237B2
公开(公告)日：2010-01-05
申请号：US11321803
申请日：2005-12-28
申请人： Tsuyoshi Takahashi
发明人： Tsuyoshi Takahashi
IPC分类号： G11B5/02
CPC分类号： G11B27/36 , G11B5/09 , G11B19/04 , G11B2005/001 , G11B2220/2516
摘要： A media storage device which reads and writes data from and to a storage medium using a head prevents in advance data loss due to thermal relaxation of data recorded on the storage medium. Management information is created, in units of received write commands, for holding the recording areas on the storage medium of the write data and signal quality information; the management data is stored in a management table, and signal quality is measured, updated, and used in re-recording judgements, in write command units. Thermal relaxation state management can be performed in write command units; thermal relaxation processing is simple, and moreover degradation of recorded data due to thermal relaxation can be detected accurately, and data loss can be prevented.
摘要翻译：使用头部从存储介质读取和写入数据的媒体存储装置防止由于记录在存储介质上的数据的热弛豫而导致的数据丢失。创建以接收的写入命令为单位的用于将记录区域保存在写入数据和信号质量信息的存储介质上的管理信息; 管理数据存储在管理表中，信号质量被测量，更新并用于重写记录判断中，在写命令单元中。热松弛状态管理可以以写命令单位执行; 热松弛处理简单，并且可以准确地检测由于热松弛引起的记录数据的劣化，并且可以防止数据丢失。

18. 发明申请

US20090269494A1 FILM-FORMING APPARATUS, FILM-FORMING METHOD AND RECORDING MEDIUM 审中-公开
标题翻译：成膜装置，成膜方法和记录介质
公开(公告)号：US20090269494A1
公开(公告)日：2009-10-29
申请号：US11910508
申请日：2006-04-03
申请人： Tsuyoshi Takahashi , Shintaro Aoyama , Takahiro Shinada , Masato Kawakami
发明人： Tsuyoshi Takahashi , Shintaro Aoyama , Takahiro Shinada , Masato Kawakami
IPC分类号： C23C16/22 , C23C16/46
CPC分类号： C23C16/401 , C23C16/45512 , G11B5/85 , G11B7/266 , H01L21/02148 , H01L21/02214 , H01L21/02271 , H01L21/31604
摘要： A film forming apparatus comprises a processing chamber for holding therein a to-be-processed substrate, a first gas supplying means for supplying into the processing chamber a first vapor source including a metal alkoxide having a tertiary butoxyl group as a ligand, and a second gas supplying means for supplying into the processing chamber a second vapor source including a silicon alkoxide source, wherein the first gas supplying means and the second gas supplying means are connected to a pre-reaction means for causing pre-reactions of the first vapor source and the second vapor source, and the film forming apparatus is configured to supply the first vapor source and the second vapor source after the pre-reactions into the processing chamber.
摘要翻译：一种成膜设备包括一个用于在其中容纳待处理衬底的处理室，一个第一气体供应装置，用于向处理室供应包括具有叔丁氧基作为配体的金属醇盐的第一蒸气源，用于向所述处理室供给包括硅醇盐源的第二蒸气源的气体供给装置，其中所述第一气体供给装置和所述第二气体供给装置连接到预反应装置，用于引起所述第一蒸气源和第二蒸气源和成膜装置构成为将预反应后的第一蒸气源和第二蒸气源供给到处理室。

19. 发明授权

US07588851B2 Fuel cell stack structure 有权
标题翻译：燃料电池堆结构
公开(公告)号：US07588851B2
公开(公告)日：2009-09-15
申请号：US10435388
申请日：2003-05-12
申请人： Yasuyuki Asai , Toshiyuki Suzuki , Tsuyoshi Takahashi
发明人： Yasuyuki Asai , Toshiyuki Suzuki , Tsuyoshi Takahashi
IPC分类号： H01M2/00
CPC分类号： H01M8/04291 , H01M8/0213 , H01M8/0228 , H01M8/0258 , H01M8/0263 , H01M8/0267 , H01M8/241 , H01M8/2457 , H01M8/2483 , H01M8/2484
摘要： The invention relates to a fuel cell stack structure capable of suppressing a drop in voltage resulting from flooding or contamination at an end in a direction in which cells are laminated, particularly in a cell at a gas outlet/inlet end. In this fuel cell stack structure, a layer which is irrelevant to power generation and in which a gas flow channel is formed is provided at least at a gas outlet/inlet end of a laminated-cell body of a fuel cell such as a solid-polyelectrolyte fuel cell. The layer is constructed of a dummy cell having a gas flow channel but no MEA. In addition, according to this fuel cell stack structure, both a fuel gas flow channel and an oxidative gas flow channel are formed in one face of the layer which is irrelevant to power generation and in which the gas flow channels are formed.
摘要翻译：本发明涉及一种燃料电池堆结构，其能够抑制电池堆叠方向上的端部处的淹水或污染导致的电压下降，特别是在气体出口/入口端的电池中。在该燃料电池堆结构中，至少在诸如固体燃料电池的燃料电池的层叠电池体的气体出口/入口端处设置与发电无关并且形成有气体流路的层，聚电解质燃料电池。该层由具有气体流动通道但没有MEA的虚拟电池构成。此外，根据该燃料电池堆结构，在与发电无关且形成有气体流路的层的一个面上形成有燃料气体流路和氧化气体流路。

20. 发明申请

US20080139000A1 Radical Processing of a Sub-Nanometer Insulation Film 审中-公开
标题翻译：亚纳米绝缘膜的自由基处理
公开(公告)号：US20080139000A1
公开(公告)日：2008-06-12
申请号：US11972503
申请日：2008-01-10
申请人： Masanobu IGETA , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
发明人： Masanobu IGETA , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , C23C16/34 , C23C16/405 , C23C16/482 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/3145 , H01L21/316 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67017 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.
摘要翻译：对绝缘膜进行氮化的方法包括以下步骤：通过在绝缘膜的表面供给氮自由基，通过高频等离子体形成氮自由基，并在其中含有氧的绝缘膜的表面发生氮化。

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